Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
Choose from over than a million of proven quality materials. Over 300 manufacturers are presented. From renowned major international players to small independent companies with a proven track record in local markets.
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EMD5DXV6T1G
Onsemi
EMD5DXV6T1G by Onsemi is a dual NPN and PNP BJT with 2 elements, 0.5W power dissipation, hFE of 20, and 0.1A collector current. It is made of silicon for surface mount applications with TIN finish. Ideal for low-power amplification in electronic circuits.
.1 A
20
e3
1
2
260
NPN AND PNP
.5 W
BIP General Purpose Small Signal
YES
TIN
SILICON
MCH6542-TL-E
MCH6542-TL-E by Onsemi is a Small Signal BJT available in NPN and PNP types. With a max power dissipation of 0.55W, min hFE of 300, and max IC of 0.3A, it operates up to 150 °C. Ideal for surface mount applications with Tin/Bismuth finish, this transistor suits various electronic designs.
.3 A
300
e6
150 Cel
.55 W
Tin/Bismuth (Sn/Bi)
2SC2909S-AA
2SC2909S-AA by Onsemi is a NPN BJT transistor for switching applications. It has a low VCEsat of 0.3V, hFE of 140, and can handle up to 160V. With a max power dissipation of 0.6W, it operates at temperatures up to 150°C.
.07 A
2 pF
160 V
SINGLE
140
O-PBCY-T3
3
PLASTIC/EPOXY
ROUND
CYLINDRICAL
NPN
.6 W
NO
Tin/Copper/Silver/Nickel (Sn/Cu/Ag/Ni)
THROUGH-HOLE
BOTTOM
SWITCHING
150 MHz
.3 V
2SA1575E-TD-E
Onsemi's 2SA1575E-TD-E is a PNP Darlington transistor with max VCEsat of 1V, hFE of 100, and fT of 400MHz. Ideal for amplifier applications due to its high gain and frequency response capabilities. Suitable for surface mount designs with small outline package style.
COLLECTOR
2.3 pF
200 V
DARLINGTON
100
R-PSSO-F3
RECTANGULAR
SMALL OUTLINE
PNP
1.3 W
FLAT
AMPLIFIER
400 MHz
1 V
MSB92AS1WT1G
MSB92AS1WT1G by Onsemi is a PNP BJT transistor with 300V VCEO, 0.5A IC, and 50MHz fT. Ideal for amplifier applications, it comes in a small outline package with Gull Wing terminals. Operating up to 150 °C, it offers a min hFE of 25 and 0.15W power dissipation.
.5 A
300 V
25
R-PDSO-G3
NOT SPECIFIED
.15 W
Not Qualified
Other Transistors
Matte Tin (Sn) - annealed
GULL WING
DUAL
50 MHz
SMUN5315DW1T1G
SMUN5315DW1T1G by Onsemi is a dual NPN and PNP BJT with 2 elements. Features include max power dissipation of 0.256W, min DC current gain of 160, and max collector current of 0.1A. Ideal for surface mount applications in electronics requiring high performance transistors.
160
.256 W
MATTE TIN
30
BC640-016G
BC640-016G by Onsemi is a PNP BJT with 3 terminals, max. power dissipation of 1.5W, and max. collector-emitter voltage of 80V. Ideal for applications requiring a min DC current gain of 25 (hFE), it operates at up to 150°C and has a nominal transition frequency of 150MHz.
80 V
TO-226AA
e1
1.5 W
TIN SILVER COPPER
NSVUMC5NT2G
NPN AND PNP; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .15 W; Maximum Collector Current (IC): .1 A; No. of Elements: 2;
BUILT-IN BIAS RESISTOR RATIO IS 1
50 V
COMPLEX
80
R-PDSO-G5
5
-65 Cel
AEC-Q101
.25 V
SMMBT2369LT1G
SMMBT2369LT1G by Onsemi is a NPN BJT transistor with 3 terminals, suitable for switching applications. It has a max power dissipation of 0.3W and can handle a max collector-emitter voltage of 15V. With a small outline package style, it operates at up to 150°C and has a min DC current gain of 20 (hFE).
.2 A
15 V
TO-236AB
.3 W
18 ns
12 ns
NSVB143TPDXV6T1G
NSVB143TPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP types, ideal for switching applications. It features 2 elements with built-in resistor, hFE of 160, VCE of 50V, and IC of 0.1A. This transistor comes in a small outline package suitable for surface mount technology.
BUILT IN BIAS RESISTOR
SEPARATE, 2 ELEMENTS WITH BUILT-IN RESISTOR
R-PDSO-F6
6
NSVB144EPDXV6T1G
NSVB144EPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for surface mount applications. Featuring 2 elements, it offers max power dissipation of 0.5W, min hFE of 80, and max IC of 0.1A. Commonly used in low-power electronic circuits due to its silicon transistor element material.
SMUN5215T1G
SMUN5215T1G by Onsemi is a NPN BJT transistor with max power dissipation of 0.31W, min hFE of 160, and max IC of 0.1A. Ideal for surface mount applications in electronics requiring high DC current gain and low power consumption.
.31 W
SMMBTA14LT3G
SMMBTA14LT3G by Onsemi is a NPN BJT transistor with max power dissipation of 0.3W, hFE of 5000, and fT of 125MHz. Ideal for applications requiring high DC current gain and fast transition frequency in surface mount configurations.
5000
125 MHz
DTA123TET1G
DTA123TET1G by Onsemi is a PNP BJT transistor with a max collector-emitter voltage of 50V and a min DC current gain of 160. It is designed for switching applications, features a built-in resistor, and comes in a small outline package suitable for surface mount technology.
SINGLE WITH BUILT-IN RESISTOR
DTA144TET1G
DTA144TET1G by Onsemi is a PNP BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This surface-mount device comes in a small outline package with Gull Wing terminals.
120
MMUN2140LT1G
MMUN2140LT1G by Onsemi is a PNP BJT with 3 terminals and built-in resistor, ideal for switching applications. It has a max collector-emitter voltage of 50V, max collector current of 0.1A, and min DC current gain of 120. This surface-mount transistor comes in a small outline package with matte tin finish.
.4 W
NSBC124XF3T5G
NSBC124XF3T5G by Onsemi is a NPN BJT with built-in resistor for switching applications. It has max. collector-emitter voltage of 50V, max. collector current of 0.1A, and min. DC current gain of 80 (hFE). This small outline transistor in plastic package is ideal for surface mount designs.
BUILT IN BIAS RESISTANCE RATIO IS 2.14
R-PDSO-F3
.297 W
BIP General Purpose Small Signals
MUN5240T1G
MUN5240T1G by Onsemi is a NPN BJT transistor with built-in resistor for switching applications. It has a min hFE of 120, max VCE of 50V, and max IC of 0.1A. This small outline package with gull wing terminals is ideal for surface mount designs.
BUILT-IN BIAS RESISTOR
2SA608NF-NPA-AT
The Onsemi 2SA608NF-NPA-AT is a PNP BJT transistor with hFE of 160, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its single configuration and max IC of 0.15A. Packaged in cylindrical shape with through-hole terminals for easy installation.
.15 A
Tin (Sn)
200 MHz
2SC536NF-NPA-AT
2SC536NF-NPA-AT by Onsemi is a NPN BJT transistor with hFE of 160, VCE of 50V, and fT of 200MHz. Ideal for amplifier applications due to its high gain and frequency response capabilities. Packaged in a cylindrical shape with through-hole terminals for easy installation.
MBT3906DW1T2G
MBT3906DW1T2G by Onsemi is a PNP BJT transistor with hFE of 100, fT of 250 MHz, and IC of 0.2 A. Ideal for surface mount applications with max temp of 150 °C, it's suitable for low-power amplification in electronic circuits.
250 MHz
2SA2205-E
The Onsemi 2SA2205-E is a PNP BJT transistor with hFE of 200, VCE of 100V, and IC of 2A. Ideal for switching applications, it operates up to 150 °C. Its silicon element and through-hole terminals make it suitable for high-frequency (300MHz) in-line package designs.
2 A
100 V
200
TO-251
R-PSIP-T3
IN-LINE
300 MHz
CPH5518-TL-E
CPH5518-TL-E by Onsemi is a Small Signal BJT with NPN and PNP channels, ideal for surface mount applications. It boasts a max power dissipation of 1.2W, min hFE of 200, and max IC of 1A. With an operating temp up to 150°C, it's suitable for various electronic circuits requiring high current amplification.
1 A
1.2 W
TIN BISMUTH
2SA2127-AE
2SA2127-AE by Onsemi is a PNP BJT transistor with max. power dissipation of 1W, max. collector-emitter voltage of 50V, and max. collector current of 2A. Ideal for switching applications due to its single configuration and cylindrical package style, it has a min DC current gain of 40 and operates up to 150°C.
40
TO-226AE
1 W
420 MHz
2SB1216S-E
The Onsemi 2SB1216S-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. Packaged in plastic/epoxy, it has through-hole terminals and a power dissipation of 20W in an inline style package.
4 A
20 W
130 MHz
2SB1216S-H
The Onsemi 2SB1216S-H is a PNP BJT transistor with max. power dissipation of 20W, hFE of 140, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 130MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.
2SB1216T-E
The Onsemi 2SB1216T-E is a PNP BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150 °C operating temperature. Its package style is in-line, making it suitable for through-hole mounting in various electronic circuits.
2SB1216T-TL-E
2SB1216T-TL-E by Onsemi is a PNP BJT transistor with 100V VCEO, 4A IC, and 130MHz fT. Ideal for switching applications, it has a max power dissipation of 20W in a small outline package. With Gull Wing terminals and TIN BISMUTH finish, it operates up to 150 °C.
TO-252
R-PSSO-G2
2SD1816S-E
The Onsemi 2SD1816S-E is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. The package style is in-line with through-hole terminals, making it suitable for high-power dissipation up to 20W in various electronic circuits.
180 MHz
2SD1816S-H
Onsemi's 2SD1816S-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. current of 4A. It has a min. DC current gain of 140, making it suitable for switching applications up to 20W power dissipation at 150°C. The through-hole package style with tin bismuth finish is ideal for various electronic designs requiring high-speed performance at a nominal transition frequency of 180MHz.
2SD1816S-TL-H
Onsemi's 2SD1816S-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 140, it's ideal for switching applications at up to 150 °C operating temperature. This small outline package has a transition frequency of 180MHz, making it suitable for high-speed switching circuits.
2SD1816T-E
2SD1816T-E by Onsemi is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its single configuration and high transition frequency of 180MHz. Package style: IN-LINE, terminal finish: TIN BISMUTH, and operating temp: 150 °C.
2SD1816T-H
Onsemi's 2SD1816T-H is a NPN BJT transistor with max. power dissipation of 20W, hFE of 200, and max. collector current of 4A. Ideal for switching applications due to its high transition frequency of 180MHz and max. collector-emitter voltage of 100V in a plastic/epoxy package with through-hole terminals.
2SD1816T-TL-H
Onsemi's 2SD1816T-TL-H is a NPN BJT transistor with max. collector-emitter voltage of 100V and max. collector current of 4A. With a min. DC current gain of 200, it's ideal for switching applications at up to 150°C operating temperature. Its small outline package and high transition frequency of 180MHz make it suitable for compact electronic designs requiring fast signal processing.
2SD1815S-H
The Onsemi 2SD1815S-H is a NPN BJT with max power dissipation of 20W, hFE of 140, and IC of 3A. Ideal for small signal applications in electronics due to its single configuration and high operating temperature of 150 °C.
3 A
2SD1815S-TL-H
2SD1815S-TL-H by Onsemi is a NPN BJT with 20W power dissipation, 140 min hFE, and 150 °C max operating temp. Ideal for applications requiring a single configuration, surface mount capability, and up to 3A collector current.
2SD1815T-H
The Onsemi 2SD1815T-H is a NPN BJT with max power dissipation of 20W, min hFE of 200, and max IC of 3A. Ideal for small signal applications in electronics due to its single configuration and operating temp up to 150 °C.
2SD1815T-TL-H
The Onsemi 2SD1815T-TL-H is a NPN BJT with max power dissipation of 20W, hFE of 200, and IC of 3A. Ideal for small signal applications in electronics due to its single configuration and surface mount capability. Operating temp up to 150 °C makes it suitable for various electronic devices.
NSVMUN5113DW1T3G
NSVMUN5113DW1T3G by Onsemi is a PNP BJT with 2 elements, hFE of 80. It has 0.1A IC, 0.385W power dissipation, and matte tin finish. Ideal for small signal applications in electronics due to its silicon material and surface mount capability.
.385 W
NSVMMBT5088LT3G
NSVMMBT5088LT3G by Onsemi is a NPN BJT with hFE of 300, VCE of 30V, and fT of 50MHz. Ideal for small signal applications in automotive electronics due to AEC-Q101 compliance and IC of 0.05A.
.05 A
30 V
CPH3121-TL-E
CPH3121-TL-E by Onsemi is a PNP BJT transistor with max power dissipation of 0.9W, hFE of 200, and IC of 3A. Ideal for surface mount applications in electronics due to its high operating temp of 150 °C and peak reflow temp of 260°C within 30s.
.9 W
NSVB114YPDXV6T1G
NSVB114YPDXV6T1G by Onsemi is a Small Signal BJT with NPN and PNP polarity, ideal for switching applications. It features 2 elements with built-in resistor, max VCE of 50V, and hFE of 80. This surface-mount transistor has a package style of small outline and complies with AEC-Q101 standards.
BUILT-IN BIAS RESISTOR RATIO 4.7
NSVMMUN2113LT3G
NSVMMUN2113LT3G by Onsemi is a PNP BJT transistor with VCEsat of 0.25V, hFE of 80, and IC of 0.1A. Ideal for switching applications in automotive electronics due to AEC-Q101 certification and built-in resistor configuration. Operating temperature range from -55 to 150 °C ensures reliable performance in various environments.
BUILT IN BIAS RESISTANCE RATIO IS 1
-55 Cel
MMBT3904TT1
MMBT3904TT1 by Onsemi is a NPN BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 40V, DC current gain of 30, and transition frequency of 300MHz. With a small outline package style and Gull Wing terminal form, it operates at up to 150°C.
40 V
e0
235
Tin/Lead (Sn/Pb)
250 ns
70 ns
BC847BTT1
BC847BTT1 by Onsemi is a NPN BJT transistor with 3 terminals, hFE of 200, and max. power dissipation of 0.15W. Ideal for amplifier applications, it operates at up to 150 °C, with Vce(max) of 45V.
45 V
100 MHz
BC847CTT1
BC847CTT1 by Onsemi is a NPN BJT transistor with 3 terminals. It has a max power dissipation of 0.15W and min DC current gain of 420. Ideal for amplifier applications, it operates at up to 150°C with a max collector-emitter voltage of 45V.
420
TIN LEAD
BC857BTT1
BC857BTT1 by Onsemi is a PNP BJT transistor with 3 terminals, ideal for amplifier applications. It has a max collector-emitter voltage of 45V, max collector current of 0.1A, and transition frequency of 100MHz. This small outline package with Gull Wing terminals operates up to 150°C, making it suitable for various electronic designs.
220
.125 W
NSBC143TPDXV6T5G
NSBC143TPDXV6T5G by Onsemi is a Small Signal BJT with NPN and PNP types, 2 elements with built-in resistor for switching applications. Features include max. collector-emitter voltage of 50V, min. DC current gain of 160 (hFE), and max. power dissipation of 0.5W in a small outline package suitable for surface mount technology.
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