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2SD1815S-H

Onsemi

2SD1815S-H by Onsemi

The Onsemi 2SD1815S-H is a NPN BJT with max power dissipation of 20W, hFE of 140, and IC of 3A. Ideal for small signal applications in electronics due to its single configuration and high operating temperature of 150 °C.

Median Price

$0.432

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

$0.383

1k+ parts

$0.318

10k+ parts

$0.283

2,500

-

$0.383

$0.318

$0.283

DigiKey

USA . 2,500 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

$0.480

10k+ parts

-

2,500

-

-

$0.480

-

Distributors (In-Stock)

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Digiode

USA . 1,598 parts In-Stock

1+ parts

$0.298

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1,598

$0.298

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Chip Stock

USA . 69,000 parts In-Stock

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69,000

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Vyrian

USA . 4,794 parts In-Stock

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4,794

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Distributors (Availability)

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Corphita

USA . 1,914 parts In-Stock

1+ parts

$0.283

100+ parts

-

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1,914

$0.283

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-

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Corohmni

South Africa . 272 parts In-Stock

1+ parts

$0.314

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-

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272

$0.314

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AZTECH Wire

Italy . 448 parts In-Stock

1+ parts

$10.710

100+ parts

-

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448

$10.710

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TANS Electronics

Latvia . 8,298 parts In-Stock

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8,298

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Problanco Electronics

Mexico . 5,288 parts In-Stock

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5,288

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QUARKTWIN TECHNOLOGY LTD

USA . 4,560 parts In-Stock

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4,560

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SupplyDigital Components

Austria . 3,769 parts In-Stock

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3,769

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Continental Prestige Electronics

USA . 2,500 parts In-Stock

1+ parts

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$0.284

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2,500

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$0.284

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Kulean Microsystems

USA . 1,928 parts In-Stock

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1,928

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Northwest PG Solutions

USA . 1,656 parts In-Stock

1+ parts

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100+ parts

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$3.462

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1,656

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$3.462

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UHIMA Technologies

Türkiye . 796 parts In-Stock

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796

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Native Components

USA . 611 parts In-Stock

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$3.427

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611

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$3.427

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Overview

Discover the power and efficiency of the 2SD1815S-H NPN transistor from Onsemi. Known for their high-quality components, Onsemi delivers reliable solutions for small signal applications. Whether you're designing audio amplifiers, switching circuits, or voltage regulators, this transistor offers a maximum power dissipation of 20W and a minimum DC current gain of 140, ensuring optimal performance. Trust Onsemi to provide the tools you need to bring your projects to life.

Feature Benefit Bullets

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits and are known for their low noise characteristics, making this product suitable for audio applications.

Configuration: SINGLE

Single configuration transistors are easy to use and are suitable for basic electronic circuits, making this product versatile for a range of applications.

Maximum Power Dissipation: 20 W

With a high maximum power dissipation, this transistor can handle higher power levels without overheating, making it reliable for demanding applications.

Minimum DC Current Gain (hFE): 140

A high minimum DC current gain ensures consistent and stable amplification in a circuit, making this product reliable for signal processing applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand elevated temperatures without performance degradation, making it suitable for industrial or automotive applications.

Maximum Collector Current (IC): 3 A

The high maximum collector current allows this transistor to handle higher current levels, making it suitable for power switching applications.

Terminal Finish: TIN BISMUTH

The tin bismuth terminal finish offers good solderability and reliability, ensuring stable connections in a circuit, making this product easy to work with during assembly.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1815S-H attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

3 A

Configuration:

Minimum DC Current Gain (hFE):

140

JESD-609 Code:

e6

No. of Elements:

1

Maximum Operating Temperature:

150 Cel

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN BISMUTH

Trade Compliance

2SD1815S-H Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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