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2SD1834T100

ROHM

2SD1834T100 by ROHM

ROHM 2SD1834T100 is a NPN Darlington BJT with VCEsat of 1.5V, hFE of 2000, and IC of 1A. Ideal for amplifier applications due to its high gain and low saturation voltage. Comes in a small outline package with max power dissipation of 2W at 150°C operating temperature.

Median Price

$1.050

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Overview

Discover the high-quality 2SD1834T100 by ROHM, a Small Signal Bipolar Junction Transistor perfect for amplifier applications. With a maximum VCEsat of only 1.5V and a minimum DC current gain of 2000, this NPN Darlington transistor offers exceptional performance and reliability. Manufactured by ROHM, a renowned leader in electronic components, this product ensures superior functionality and durability. Whether you're building audio amplifiers or signal processing circuits, the 2SD1834T100 provides unmatched value and efficiency, making it a must-have for your projects.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the internal components of the transistor.

Polarity or Channel Type: NPN

Commonly used in amplifier circuits and provides high efficiency.

Configuration: DARLINGTON

Offers high input impedance and high current gain making it suitable for amplifier applications.

Transistor Application: AMPLIFIER

Designed to amplify signals efficiently and accurately.

Surface Mount: YES

Allows for easy and efficient mounting on circuit boards.

Maximum VCEsat: 1.5 V

Low VCEsat results in minimal power loss and improved efficiency.

Terminal Form: FLAT

Facilitates easy soldering and secure connection.

Maximum Power Dissipation (Abs): 2 W

Can handle high power levels without compromising performance.

Maximum Collector-Emitter Voltage: 60 V

Allows for operation in a wide range of voltage conditions.

Technical Specifications

Small Signal Bipolar Junction Transistors (BJT) 2SD1834T100 attributes and parameters. Explore more Small Signal Bipolar Junction Transistors (BJT) devices from ROHM

Specs

Case Connection:

COLLECTOR

Maximum Collector Current (IC):

1 A

Maximum Collector-Emitter Voltage:

60 V

Configuration:

Minimum DC Current Gain (hFE):

2000

JESD-30 Code:

R-PSSO-F3

JESD-609 Code:

e2

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation Ambient:

2 W

Maximum Power Dissipation (Abs):

2 W

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

TIN COPPER

Terminal Form:

FLAT

Terminal Position:

SINGLE

Maximum Time At Peak Reflow Temperature (s):

10

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Maximum VCEsat:

1.5 V

Trade Compliance

2SD1834T100 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.29.00.75

SB

8541.29.00.80

PCN

Manufacturer Highlights

ROHM

Rohm Co Ltd is a Japan-based company that manufactures and distributes electronic components for use in automotive, transportation, medical, healthcare, audiovisual, telecommunications, digital power, computer and peripherals, and home appliance end markets. Its product portfolio includes integrated circuits in memory, amplifiers, switches, data converters, and microcontrollers; discrete semiconductors, such as transistors and diodes; power devices; passive devices, such as resistors and capacitors; and optoelectronic devices.

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