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EEPROM

EEPROM, or Electrically Erasable Programmable Read-Only Memory, is a type of non-volatile computer memory that can store and retrieve data even when the power is turned off. EEPROM is commonly used in digital devices, such as computers, mobile phones, and digital cameras, to store configuration data, firmware, and other important information.

EEPROM works by storing data in a grid of memory cells that can be individually programmed and erased using electrical signals. Each memory cell consists of a transistor and a floating gate. The floating gate can hold an electric charge, which determines the state of the memory cell. To write data to the EEPROM, an electrical signal is applied to the transistor, which charges or discharges the floating gate. To read data from the EEPROM, an electrical signal is applied to the transistor, which determines the state of the floating gate.

One of the advantages of EEPROM is that it is non-volatile, which means that it can store data even when the power is turned off. This makes it ideal for storing critical data, such as system settings and firmware, that must be retained even in the absence of power.

EEPROM can also be reprogrammed and erased many times, which makes it a versatile and flexible memory technology. EEPROM can be programmed and erased in blocks or individually, depending on the specific requirements of the application.

One of the disadvantages of EEPROM is that it is slower than other types of computer memory, such as RAM or cache memory. EEPROM access times are measured in microseconds, which is much slower than access times for other types of memory. This makes EEPROM less suitable for applications that require high-speed data access.

EEPROM

Available Parts 850

Part# Info Specs
Part RoHS Manufacturer Description Maximum Access Time Additional Features Alternate Memory Width Maximum Clock Frequency (fCLK) Command User Interface Data Polling Minimum Data Retention Time Endurance Input/Output Type I2C Control Byte JESD-30 Code JESD-609 Code Length Memory Density Memory IC Type Memory Width Moisture Sensitivity Level (MSL) No. of Functions No. of Ports No. of Sectors/Size No. of Terminals No. of Words No. of Words Code Operating Mode Maximum Operating Temperature Minimum Operating Temperature Organization Output Characteristics Package Body Material Package Code Package Equivalence Code Package Shape Package Style (Meter) Page Size (words) Parallel or Serial Peak Reflow Temperature (C) Power Supplies (V) Programming Voltage (V) Qualification Ready or Busy Reverse Pinout Screening Level Maximum Seated Height Sector Size (Words) Serial Bus Type Maximum Standby Current Sub-Category Maximum Supply Current Maximum Supply Voltage (Vsup) Minimum Supply Voltage (Vsup) Nominal Supply Voltage / Vsup (V) Surface Mount Technology Temperature Grade Terminal Finish Terminal Form Terminal Pitch Terminal Position Maximum Time At Peak Reflow Temperature (s) Toggle Bit Total Dose (V) Type Width Maximum Write Cycle Time (tWC) Write Protection
CAT24C02WIG by Catalyst Semiconductor

CAT24C02WIG

Catalyst Semiconductor

CAT24C02WIG by Catalyst Semiconductor is an EEPROM with 256x8 organization, I2C control byte 1010DDDR, and 2048-bit memory density. It operates in industrial temperature range (-40 to 85°C) and offers write protection. Ideal for applications requiring small outline package style and serial bus type communication.

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

2048 bit

EEPROM

8

8

256 words

256

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

2/5

Not Qualified

I2C

.000002 Amp

EEPROMs

1 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

HARDWARE

M24M01-RCS6TP/A by STMicroelectronics

M24M01-RCS6TP/A

STMicroelectronics

The STMicroelectronics M24M01-RCS6TP/A is an EEPROM with 128KX8 organization, I2C control byte 1010DDMR, and 1048576-bit memory density. It operates in industrial temperature grades (-40 to 85 °C) and offers 1000000 write/erase cycles. Ideal for applications requiring reliable non-volatile memory storage with serial bus communication.

40

1000000 Write/Erase Cycles

1010DDMR

S-PBGA-B8

1048576 bit

EEPROM

8

8

131072 words

128K

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

BGA

BGA8,3X3,47/24

SQUARE

GRID ARRAY

SERIAL

2/5

Not Qualified

I2C

.000001 Amp

EEPROMs

5 mA

YES

CMOS

INDUSTRIAL

BALL

.6 mm

BOTTOM

HARDWARE

M95M01-RCS6TP/A by STMicroelectronics

M95M01-RCS6TP/A

STMicroelectronics

The STMicroelectronics M95M01-RCS6TP/A is an EEPROM with 128KX8 organization, SPI serial bus type, and 1000000 write/erase cycles endurance. It operates in industrial temperature range (-40 to 85 °C) and has a memory density of 1048576 bit. Ideal for applications requiring reliable non-volatile memory storage.

40

1000000 Write/Erase Cycles

S-PBGA-B8

1048576 bit

EEPROM

8

8

131072 words

128K

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

BGA

BGA8,3X3,47/24

SQUARE

GRID ARRAY

SERIAL

2/5

Not Qualified

SPI

.000003 Amp

EEPROMs

5 mA

YES

CMOS

INDUSTRIAL

BALL

.6 mm

BOTTOM

HARDWARE/SOFTWARE

PCA24S08D/DG,118 by NXP Semiconductors

PCA24S08D/DG,118

NXP Semiconductors

PCA24S08D/DG,118 by NXP Semiconductors is an 8-terminal EEPROM with 1Kx8 organization and I2C serial bus type. It operates at -40 to 85°C, offers 100000 write/erase cycles endurance, and has a memory density of 8192 bits. Ideal for industrial applications requiring small outline packages and low power consumption.

10

100000 Write/Erase Cycles

10101MMR

R-PDSO-G8

8192 bit

EEPROM

8

8

1024 words

1K

85 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

3/3.3

Not Qualified

I2C

.000015 Amp

EEPROMs

1 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

HARDWARE/SOFTWARE

24FC64-I/MF by Microchip Technology

24FC64-I/MF

Microchip Technology

24FC64-I/MF by Microchip Technology is an EEPROM with 8KX8 organization, 1 MHz clock frequency, and 1000000 write/erase cycles. It operates in industrial temperature range (-40 to 85 °C) and uses I2C serial bus for applications requiring reliable non-volatile memory storage.

ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-N8

e3

3 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.12,25

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2/5

4.5

Not Qualified

AEC-Q100

1 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.65 mm

DUAL

3 mm

5 ms

HARDWARE

24FC64T-I/MF by Microchip Technology

24FC64T-I/MF

Microchip Technology

24FC64T-I/MF by Microchip Technology is an EEPROM with 8Kx8 organization, 65536-bit memory density, and 1000000 write/erase cycles endurance. It operates in industrial temperature grade, has a max clock frequency of 1 MHz, and uses I2C serial bus type. Ideal for applications requiring reliable non-volatile memory storage in harsh environments.

ALSO OPERATES AT 1.7V TO 2.5V @ 0.4MHZ

1 MHz

200

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-N8

e3

3 mm

65536 bit

EEPROM

8

1

1

8

8192 words

8K

SYNCHRONOUS

85 Cel

-40 Cel

8KX8

OPEN-DRAIN

PLASTIC/EPOXY

HVSON

SOLCC8,.12,25

SQUARE

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

2/5

4.5

Not Qualified

AEC-Q100

1 mm

I2C

.000001 Amp

EEPROMs

3 mA

5.5 V

2.5 V

4.5

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.65 mm

DUAL

3 mm

5 ms

HARDWARE

M95320-DRMN6TP by STMicroelectronics

M95320-DRMN6TP

STMicroelectronics

STMicroelectronics M95320-DRMN6TP is an EEPROM with 4KX8 organization, SPI serial bus type, and 1000000 write/erase cycles endurance. It operates in industrial temperature range (-40 to 85 °C) and has a memory density of 32768 bit. Ideal for applications requiring reliable non-volatile memory storage.

40

1000000 Write/Erase Cycles

R-PDSO-G8

32768 bit

EEPROM

8

8

4096 words

4K

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

2/5

Not Qualified

SPI

.000001 Amp

EEPROMs

5 mA

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

HARDWARE/SOFTWARE

M95320-DRDW6TP by STMicroelectronics

M95320-DRDW6TP

STMicroelectronics

M95320-DRDW6TP by STMicroelectronics is an EEPROM with 4KX8 organization, SPI serial bus type, and 32768-bit memory density. It operates in industrial temperature range (-40 to 85 °C) and offers 1000000 write/erase cycles endurance. Ideal for applications requiring small outline, thin profile packages with hardware/software write protection.

40

1000000 Write/Erase Cycles

R-PDSO-G8

32768 bit

EEPROM

8

8

4096 words

4K

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

2/5

Not Qualified

SPI

.000001 Amp

EEPROMs

5 mA

YES

CMOS

INDUSTRIAL

GULL WING

.635 mm

DUAL

HARDWARE/SOFTWARE

M95320-DRMC6TG by STMicroelectronics

M95320-DRMC6TG

STMicroelectronics

STMicroelectronics M95320-DRMC6TG is an 8-terminal EEPROM with 4Kx8 organization, SPI serial bus type, and 32768-bit memory density. It operates b/w -40 to 85 °C, offers hardware/software write protection, and has a max standby current of 0.000001A. Ideal for industrial applications requiring reliable non-volatile memory storage.

40

1000000 Write/Erase Cycles

R-PDSO-N8

e4

32768 bit

EEPROM

8

1

8

4096 words

4K

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

SON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

SPI

.000001 Amp

EEPROMs

5 mA

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

HARDWARE/SOFTWARE

LE24512AQF-AH by Onsemi

LE24512AQF-AH

Onsemi

LE24512AQF-AH by Onsemi is an EEPROM with 64KX8 organization, operating at -40 to 85 °C. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring a memory density of 524288 bit and serial bus type I2C communication.

20

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-N8

e3

524288 bit

EEPROM

8

3

8

65536 words

64K

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE

SERIAL

260

1.8/3.3

Not Qualified

I2C

.000002 Amp

EEPROMs

5 mA

YES

CMOS

INDUSTRIAL

MATTE TIN

NO LEAD

.5 mm

DUAL

30

HARDWARE

LE24CBK23MC-AH by Onsemi

LE24CBK23MC-AH

Onsemi

LE24CBK23MC-AH by Onsemi is an EEPROM with 256x8 organization, CMOS technology, and 4096-bit memory density. It operates at -40 to 85 °C, has a max supply current of 8mA, and offers hardware write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

20

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4096 bit

EEPROM

8

3

2

8

256 words

256

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

Not Qualified

.000005 Amp

EEPROMs

8 mA

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

HARDWARE

TC58NVG1S3ETA00 by Toshiba

TC58NVG1S3ETA00

Toshiba

EEPROM; Temperature Grade: COMMERCIAL; No. of Terminals: 48; Package Code: TSOP1; Package Shape: RECTANGULAR; No. of Sectors/Size: 2K;

25 ns

YES

NO

R-PDSO-G48

e3

18.4 mm

2147483648 bit

EEPROM

8

1

2K

48

268435456 words

256M

SYNCHRONOUS

70 Cel

0 Cel

256MX8

PLASTIC/EPOXY

TSOP1

TSSOP48,.8,20

RECTANGULAR

SMALL OUTLINE, THIN PROFILE

2K

PARALLEL

260

3/3.3

3

Not Qualified

YES

1.2 mm

128K

.00005 Amp

Flash Memories

30 mA

3.6 V

2.7 V

3.3

YES

CMOS

COMMERCIAL

TIN

GULL WING

.5 mm

DUAL

NO

NAND TYPE

12 mm

BR24T02FV-WGE2 by ROHM

BR24T02FV-WGE2

ROHM

ROHM's BR24T02FV-WGE2 is an EEPROM with 256x8 organization, operating at 1.8/5V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

SEATED HT-CALCULATED

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

4.4 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

LSSOP

SSOP8,.25

RECTANGULAR

SMALL OUTLINE, LOW PROFILE, SHRINK PITCH

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

1.35 mm

MICROWIRE

.000002 Amp

EEPROMs

2 mA

5.5 V

1.6 V

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

NOT SPECIFIED

3 mm

5 ms

HARDWARE

CAT24M01LI-G by Onsemi

CAT24M01LI-G

Onsemi

CAT24M01LI-G by Onsemi is an 8-terminal EEPROM with 128KX8 organization, operating at 3.3V. It features a max clock frequency of 0.4 MHz and offers 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e4

9.27 mm

1048576 bit

EEPROM

8

1

8

131072 words

128K

SYNCHRONOUS

85 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

3/5

Not Qualified

5.33 mm

SPI

.000002 Amp

EEPROMs

3 mA

5.5 V

1.8 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

CAT24M01WE-GT3 by Onsemi

CAT24M01WE-GT3

Onsemi

CAT24M01WE-GT3 by Onsemi is an EEPROM with 128KX8 organization, operating at 3.3V and featuring a max clock frequency of 1 MHz. Suitable for automotive applications, it offers 1000000 Write/Erase cycles endurance, SPI serial bus type, and -40 to 125 °C temperature range.

1 MHz

100

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e4

4.9 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

SPI

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3.3

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

1.27 mm

DUAL

40

3.9 mm

5 ms

HARDWARE

CAT24M01YE-GT3 by Onsemi

CAT24M01YE-GT3

Onsemi

CAT24M01YE-GT3 by Onsemi is an EEPROM with 128KX8 organization, operating at 3.3V. It offers 1MHz clock frequency, SPI serial bus type, and 1000000 write/erase cycles endurance. Ideal for automotive applications due to its -40 to 125 °C temperature range and small outline package style.

1 MHz

100

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e4

4.4 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

1.2 mm

SPI

.000005 Amp

EEPROMs

3 mA

5.5 V

2.5 V

3.3

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

5 ms

HARDWARE

11AA020T-I/CS16K by Microchip Technology

11AA020T-I/CS16K

Microchip Technology

11AA020T-I/CS16K by Microchip Technology is a serial EEPROM with 256x8 organization, operating at 5V. It features synchronous operation, software write protection, and industrial temperature grade. With a memory density of 2048 bits and endurance of 1M cycles, it is ideal for applications requiring reliable non-volatile data storage in harsh environments.

3 MHz

200

1000000 Write/Erase Cycles

R-PBGA-B4

e1

2048 bit

EEPROM

8

1

1

4

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

TOTEM POLE

PLASTIC/EPOXY

VFBGA

BGA4,2X2,35/16

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2/5

Not Qualified

NO

NO

TS 16949

.55 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

NO

10 ms

SOFTWARE

11AA160T-I/CS16K by Microchip Technology

11AA160T-I/CS16K

Microchip Technology

Microchip Technology's 11AA160T-I/CS16K is a 2Kx8 EEPROM with 16384-bit memory density. Operating at 5V, it offers synchronous mode and serial interface with software write protection. Ideal for industrial applications, it has a max clock frequency of 3MHz and endurance of 1M cycles.

3 MHz

200

1000000 Write/Erase Cycles

R-PBGA-B4

e1

16384 bit

EEPROM

8

1

1

4

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

TOTEM POLE

PLASTIC/EPOXY

VFBGA

BGA4,2X2,35/16

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2/5

Not Qualified

NO

NO

TS 16949

.55 mm

1-WIRE

.000005 Amp

EEPROMs

5 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

TIN SILVER COPPER

BALL

.4 mm

BOTTOM

NO

10 ms

SOFTWARE

24LC1026-E/P by Microchip Technology

24LC1026-E/P

Microchip Technology

24LC1026-E/P by Microchip Technology is an EEPROM with 128KX8 organization, operating in synchronous mode at 4.5V. It features I2C control byte 1010DDMR and offers 1000000 write/erase cycles. Ideal for automotive applications due to its TS16949 screening level and -40 to 125 °C temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDIP-T8

e3

9.271 mm

1048576 bit

EEPROM

8

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

4.5

Not Qualified

TS 16949

5.334 mm

I2C

.000005 Amp

5 mA

5.5 V

2.5 V

4.5

NO

CMOS

AUTOMOTIVE

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

24LC1026T-E/SM by Microchip Technology

24LC1026T-E/SM

Microchip Technology

24LC1026T-E/SM by Microchip Tech is an EEPROM with 128KX8 organization, operating at 4.5V. It has a max clock frequency of 0.4 MHz and endurance of 1M write/erase cycles. Ideal for automotive applications due to its TS16949 screening level and -40 to 125 °C operating temperature range.

.4 MHz

200

1000000 Write/Erase Cycles

1010DDMR

R-PDSO-G8

e3

5.26 mm

1048576 bit

EEPROM

8

1

1

1

8

131072 words

128K

SYNCHRONOUS

125 Cel

-40 Cel

128KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

4.5

Not Qualified

TS 16949

2.03 mm

I2C

.000005 Amp

5 mA

5.5 V

2.5 V

4.5

YES

CMOS

AUTOMOTIVE

MATTE TIN

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE

25A512-I/SN by Microchip Technology

25A512-I/SN

Microchip Technology

Microchip's 25A512-I/SN is a small outline EEPROM with 64KX8 organization, operating at 2.5V and up to 10MHz clock frequency. Ideal for industrial applications, it offers SPI serial bus type, 1M write/erase cycles endurance, and -40 to 85°C temperature range.

1.7V TO 2V @ 2MHz

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

4.9 mm

524288 bit

EEPROM

8

1

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

SOP

SOP8,.23

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2.5

Not Qualified

TS 16949

1.75 mm

SPI

.00001 Amp

5 mA

3 V

2 V

2.5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE/SOFTWARE

25LC128T-I/SM by Microchip Technology

25LC128T-I/SM

Microchip Technology

25LC128T-I/SM by Microchip Tech is a 16KX8 EEPROM with SPI interface, 10 MHz clock frequency, and 1000000 write/erase cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact small outline package.

10 MHz

200

1000000 Write/Erase Cycles

R-PDSO-G8

e3

5.26 mm

131072 bit

EEPROM

8

1

1

1

8

16384 words

16K

SYNCHRONOUS

85 Cel

-40 Cel

16KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/5

5

Not Qualified

AEC-Q100

2.03 mm

SPI

.000001 Amp

EEPROMs

5 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

40

5.25 mm

5 ms

HARDWARE/SOFTWARE

CAT24C512LI-G by Onsemi

CAT24C512LI-G

Onsemi

CAT24C512LI-G by Onsemi is an EEPROM with 64KX8 organization, 524288 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in synchronous mode at a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage with I2C serial bus interface.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.27 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

85 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

2/5

Not Qualified

NO

5.33 mm

I2C

.000002 Amp

EEPROMs

2.5 mA

5.5 V

1.8 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M95160-FDW6TP by STMicroelectronics

M95160-FDW6TP

STMicroelectronics

STMicroelectronics M95160-FDW6TP is a 2Kx8 EEPROM with SPI serial bus, 5 MHz clock frequency, and 1.7-5.5V supply voltage range. Ideal for industrial applications requiring high endurance of 1M write/erase cycles in a small outline package.

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

4.4 mm

16384 bit

EEPROM

8

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

NOT SPECIFIED

1.8/5

Not Qualified

1.2 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

1.7 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

NOT SPECIFIED

3 mm

5 ms

HARDWARE/SOFTWARE

M24C16-FMC5TG by STMicroelectronics

M24C16-FMC5TG

STMicroelectronics

STMicroelectronics M24C16-FMC5TG is a 2Kx8 EEPROM with 16384-bit memory density. It operates at 1.8V, supports I2C serial bus, and has a max clock frequency of 0.4MHz. Ideal for applications requiring low power consumption and non-volatile memory storage in compact electronic devices.

.4 MHz

200

4000000 Write/Erase Cycles

1010DDDR

R-XDSO-N8

e4

3 mm

16384 bit

EEPROM

8

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-20 Cel

2KX8

OPEN-DRAIN

UNSPECIFIED

HVQCCN

SOLCC8,.12,20

RECTANGULAR

CHIP CARRIER, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

1.8/5

1.8

Not Qualified

.6 mm

I2C

.000001 Amp

EEPROMs

1 mA

5.5 V

1.7 V

1.8

YES

CMOS

OTHER

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

CAT24C256XE-T2 by Onsemi

CAT24C256XE-T2

Onsemi

CAT24C256XE-T2 by Onsemi is an EEPROM with 32KX8 organization, 262144 bit memory density, and 1000000 Write/Erase Cycles endurance. It operates in synchronous mode at a max clock frequency of 1 MHz. Ideal for automotive applications due to its small outline package style and wide temperature range from -40 to 125 °C.

100 YEAR DATA RETENTION

1 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e3

5.255 mm

262144 bit

EEPROM

8

3

1

8

32768 words

32K

SYNCHRONOUS

125 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

SOP

SOP8,.3

RECTANGULAR

SMALL OUTLINE

SERIAL

3/5

Not Qualified

2.03 mm

I2C

.000002 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

TIN

GULL WING

1.27 mm

DUAL

5.23 mm

5 ms

HARDWARE

CAT24C32TSI-T3 by Onsemi

CAT24C32TSI-T3

Onsemi

CAT24C32TSI-T3 by Onsemi is a 4Kx8 EEPROM with I2C control byte. It operates at 1MHz clock frequency, has 1000000 write/erase cycles endurance, and -40 to 85 °C temperature range. Ideal for industrial applications requiring low power consumption and reliable data storage in a compact form factor.

100 YEAR DATA RETENTION

1 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G5

e3

3 mm

32768 bit

EEPROM

8

1

5

4096 words

4K

SYNCHRONOUS

85 Cel

-40 Cel

4KX8

PLASTIC/EPOXY

TSSOP

TSOP5/6,.11,37

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

NOT SPECIFIED

2/5

Not Qualified

1.1 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.95 mm

DUAL

NOT SPECIFIED

1.5 mm

5 ms

HARDWARE

CAT24C02LI-GA by Onsemi

CAT24C02LI-GA

Onsemi

CAT24C02LI-GA by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It features I2C control byte 1010DDDR and offers write protection. With a memory density of 2048 bit, it is ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e4

9.27 mm

2048 bit

EEPROM

8

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/5

Not Qualified

5.33 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

CAT24C02WE-GT3A by Onsemi

CAT24C02WE-GT3A

Onsemi

CAT24C02WE-GT3A by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for automotive applications due to its small outline package style and wide temperature range of -40 to 125 °C.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.9 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

125 Cel

-40 Cel

256X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

2/5

Not Qualified

1.75 mm

I2C

.000005 Amp

EEPROMs

2 mA

5.5 V

1.8 V

3.3

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

1.27 mm

DUAL

30

3.9 mm

5 ms

HARDWARE

CAT24C02YE-GT3A by Onsemi

CAT24C02YE-GT3A

Onsemi

CAT24C02YE-GT3A by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It features I2C control byte 1010DDDR and offers 1000000 write/erase cycles. Ideal for automotive applications due to its small outline package and wide temperature range of -40 to 125 °C.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.4 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

125 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

1.2 mm

I2C

.000005 Amp

EEPROMs

2 mA

5.5 V

1.8 V

3.3

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

5 ms

HARDWARE

CAT24C02YI-GT3A by Onsemi

CAT24C02YI-GT3A

Onsemi

CAT24C02YI-GT3A by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It offers a write protection feature and endurance of 1M cycles. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.4 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

5 ms

HARDWARE

CAT24C02ZI-GT3A by Onsemi

CAT24C02ZI-GT3A

Onsemi

CAT24C02ZI-GT3A by Onsemi is an EEPROM with 256x8 organization, operating at 3.3V. It features I2C control byte 1010DDDR and offers write protection. Suitable for industrial applications, it has a max clock frequency of 0.4 MHz and endurance of 1M cycles.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

S-PDSO-G8

e4

3 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

1.8/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

CAT24C08HU4E-GT3 by Onsemi

CAT24C08HU4E-GT3

Onsemi

CAT24C08HU4E-GT3 by Onsemi is an EEPROM with 1KX8 organization, 8192 bit memory density, and 1000000 Write/Erase cycles. It operates at a max clock frequency of 0.4 MHz and is ideal for automotive applications due to its temperature grade.

.4 MHz

100

1000000 Write/Erase Cycles

1010DMMR

R-PDSO-N8

e4

3 mm

8192 bit

EEPROM

8

1

1

8

1024 words

1K

SYNCHRONOUS

125 Cel

-40 Cel

1KX8

PLASTIC/EPOXY

HVSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

2/5

Not Qualified

.55 mm

I2C

.000005 Amp

EEPROMs

2 mA

5.5 V

1.8 V

3.3

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

30

2 mm

5 ms

HARDWARE

CAT25512YE-GT3 by Onsemi

CAT25512YE-GT3

Onsemi

CAT25512YE-GT3 by Onsemi is an EEPROM with 64KX8 organization, 10 MHz clock frequency, and SPI serial bus type. Ideal for automotive applications, it offers 1000000 write/erase cycles endurance and operates at temperatures ranging from -40 to 125 °C.

100 YEAR DATA RETENTION

10 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.4 mm

524288 bit

EEPROM

8

1

1

8

65536 words

64K

SYNCHRONOUS

125 Cel

-40 Cel

64KX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

NOT SPECIFIED

3/5

Not Qualified

1.2 mm

SPI

.000003 Amp

EEPROMs

3 mA

5.5 V

2.5 V

5

YES

CMOS

AUTOMOTIVE

Nickel/Palladium/Gold (Ni/Pd/Au)

GULL WING

.65 mm

DUAL

NOT SPECIFIED

3 mm

5 ms

HARDWARE/SOFTWARE

CAV24C16YE-GT3 by Onsemi

CAV24C16YE-GT3

Onsemi

CAV24C16YE-GT3 by Onsemi is an EEPROM with 16KX1 organization, operating at 3.6V. It features a serial I2C bus type, 1000000 write/erase cycles endurance, and -40 to 125 °C temperature range. Ideal for automotive applications due to its small form factor and low standby current of 0.000005 Amp.

100 YEAR DATA RETENTION

.4 MHz

100

1000000 Write/Erase Cycles

R-PDSO-G8

e4

4.4 mm

16384 bit

EEPROM

1

1

1

1

8

16384 words

16K

SYNCHRONOUS

125 Cel

-40 Cel

16KX1

PLASTIC/EPOXY

TSSOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

Not Qualified

1.2 mm

I2C

.000005 Amp

2 mA

5.5 V

2.5 V

3.6

YES

CMOS

AUTOMOTIVE

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

30

3 mm

5 ms

HARDWARE

M95256-DRDW6TP by STMicroelectronics

M95256-DRDW6TP

STMicroelectronics

M95256-DRDW6TP by STMicroelectronics is a 256-bit EEPROM with SPI serial bus, 32x8 organization, and 5 MHz clock frequency. It operates in industrial temperature range (-40 to 85 °C) and offers 1 million write/erase cycles. Ideal for applications requiring low power consumption and reliable non-volatile memory storage.

80 ns

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

4.4 mm

256 bit

EEPROM

8

1

8

32 words

32

SYNCHRONOUS

85 Cel

-40 Cel

32X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

NOT SPECIFIED

5

Not Qualified

1.2 mm

SPI

.000003 Amp

EEPROMs

3 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

GULL WING

.65 mm

DUAL

NOT SPECIFIED

3 mm

5 ms

HARDWARE/SOFTWARE

M95256-DRMN6TP by STMicroelectronics

M95256-DRMN6TP

STMicroelectronics

M95256-DRMN6TP by STMicroelectronics is a 256-bit EEPROM with SPI serial bus, 32x8 organization, and 5 MHz clock frequency. It operates in industrial temperature range (-40 to 85 °C) and offers 1000000 write/erase cycles. Ideal for applications requiring small outline package, synchronous operation, and hardware/software write protection.

80 ns

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-G8

4.9 mm

256 bit

EEPROM

8

1

8

32 words

32

SYNCHRONOUS

85 Cel

-40 Cel

32X8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

NOT SPECIFIED

5

Not Qualified

1.75 mm

SPI

.000003 Amp

EEPROMs

3 mA

5.5 V

1.8 V

5

YES

CMOS

INDUSTRIAL

GULL WING

1.27 mm

DUAL

NOT SPECIFIED

3.9 mm

5 ms

HARDWARE/SOFTWARE

M95256RMB6TG by STMicroelectronics

M95256RMB6TG

STMicroelectronics

STMicroelectronics' M95256RMB6TG is a 256-bit EEPROM with SPI interface, operating at 5 MHz. It features synchronous mode, 32x8 organization, and endurance of 1M cycles. Ideal for industrial applications requiring low power consumption and reliable non-volatile memory storage.

80 ns

5 MHz

40

1000000 Write/Erase Cycles

R-PDSO-N8

3 mm

256 bit

EEPROM

8

1

8

32 words

32

SYNCHRONOUS

85 Cel

-40 Cel

32X8

PLASTIC/EPOXY

VSON

SOLCC8,.11,20

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE

SERIAL

NOT SPECIFIED

2/5

Not Qualified

.6 mm

SPI

.000003 Amp

EEPROMs

3 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

NO LEAD

.5 mm

DUAL

NOT SPECIFIED

2 mm

5 ms

HARDWARE/SOFTWARE

S-93C56BD0II8T1U by Seiko Instruments Usa

S-93C56BD0II8T1U

Seiko Instruments Usa

Seiko Instruments Usa's S-93C56BD0II8T1U is a 2048-bit EEPROM with 128x16 organization, operating at up to 2 MHz clock frequency. It features a serial interface, industrial temperature grade, and low 0.65mm terminal pitch. Ideal for applications requiring small outline packages and reliable non-volatile memory storage.

100 YEARS DATA RETENTION

2 MHz

100

R-PDSO-G8

e3

2.9 mm

2048 bit

EEPROM

16

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X16

PLASTIC/EPOXY

VSSOP

RECTANGULAR

SMALL OUTLINE, VERY THIN PROFILE, SHRINK PITCH

SERIAL

.8 mm

3-WIRE

5.5 V

4.5 V

5

YES

CMOS

INDUSTRIAL

TIN

GULL WING

.65 mm

DUAL

2.8 mm

93LC66AT-I/MNY by Microchip Technology

93LC66AT-I/MNY

Microchip Technology

93LC66AT-I/MNY by Microchip Technology is a 512x8 EEPROM with serial bus type MICROWIRE. It operates at 2 MHz clock frequency, has 1000000 write/erase cycles endurance, and supports software write protection. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

2 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

4096 bit

EEPROM

8

1

1

1

8

512 words

512

SYNCHRONOUS

85 Cel

-40 Cel

512X8

TOTEM POLE

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

YES

NO

TS 16949

.8 mm

MICROWIRE

.000001 Amp

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

40

YES

2 mm

6 ms

SOFTWARE

93LC66BT-I/MNY by Microchip Technology

93LC66BT-I/MNY

Microchip Technology

93LC66BT-I/MNY by Microchip Technology is a 256x16 EEPROM with 1000000 Write/Erase Cycles. Operating at 2 MHz, it has a memory density of 4096 bit and supports MICROWIRE serial bus type. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact package.

2 MHz

200

1000000 Write/Erase Cycles

R-PDSO-N8

e4

3 mm

4096 bit

EEPROM

16

1

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X16

TOTEM POLE

PLASTIC/EPOXY

HVSON

SOLCC8,.12,20

RECTANGULAR

SMALL OUTLINE, HEAT SINK/SLUG, VERY THIN PROFILE

SERIAL

260

YES

NO

TS 16949

.8 mm

MICROWIRE

.000001 Amp

2 mA

5.5 V

2.5 V

5

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

NO LEAD

.5 mm

DUAL

40

YES

2 mm

6 ms

SOFTWARE

BR24T256-W by ROHM

BR24T256-W

ROHM

ROHM's BR24T256-W EEPROM features 32Kx8 organization, operates at 1.8/5V, and has a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable data storage with 1000000 write/erase cycles endurance.

SEATED HT-CALCULATED

.4 MHz

40

1000000 Write/Erase Cycles

1010DDDR

R-PDIP-T8

e3

9.3 mm

262144 bit

EEPROM

8

1

1

8

32768 words

32K

SYNCHRONOUS

85 Cel

-40 Cel

32KX8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

1.8/5

Not Qualified

4.21 mm

I2C

.000002 Amp

EEPROMs

2.5 mA

5.5 V

1.6 V

NO

CMOS

INDUSTRIAL

MATTE TIN

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE

M95160-RCS6TP/S by STMicroelectronics

M95160-RCS6TP/S

STMicroelectronics

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: VFBGA; Package Shape: RECTANGULAR; Power Supplies (V): 2/5;

5 MHz

40

1000000 Write/Erase Cycles

R-PBGA-B8

e3

1.365 mm

16384 bit

EEPROM

8

1

1

8

2048 words

2K

SYNCHRONOUS

85 Cel

-40 Cel

2KX8

PLASTIC/EPOXY

VFBGA

BGA8,3X3,16

RECTANGULAR

GRID ARRAY, VERY THIN PROFILE, FINE PITCH

SERIAL

2/5

Not Qualified

.6 mm

SPI

.000001 Amp

EEPROMs

3 mA

5.5 V

1.8 V

YES

CMOS

INDUSTRIAL

MATTE TIN

BALL

.4 mm

BOTTOM

1.35 mm

5 ms

HARDWARE/SOFTWARE

PCA24S08AD,118 by NXP Semiconductors

PCA24S08AD,118

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR; Width: 3.9 mm;

.4 MHz

10

100000 Write/Erase Cycles

10101MMR

R-PDSO-G8

e3

4.9 mm

8388608 bit

EEPROM

8

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

SOP

SOP8,.25

RECTANGULAR

SMALL OUTLINE

SERIAL

260

3/3.3

Not Qualified

1.75 mm

I2C

.000018 Amp

EEPROMs

1 mA

3.6 V

2.5 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

1.27 mm

DUAL

30

3.9 mm

HARDWARE/SOFTWARE

PCA24S08ADP,118 by NXP Semiconductors

PCA24S08ADP,118

NXP Semiconductors

EEPROM; Temperature Grade: INDUSTRIAL; No. of Terminals: 8; Package Code: TSSOP; Package Shape: SQUARE; Terminal Position: DUAL;

.4 MHz

10

100000 Write/Erase Cycles

10101MMR

S-PDSO-G8

e3

3 mm

8388608 bit

EEPROM

8

1

1

8

1048576 words

1M

SYNCHRONOUS

85 Cel

-40 Cel

1MX8

PLASTIC/EPOXY

TSSOP

TSSOP8,.19

SQUARE

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

3/3.3

Not Qualified

1.1 mm

I2C

.000018 Amp

EEPROMs

1 mA

3.6 V

2.5 V

YES

CMOS

INDUSTRIAL

MATTE TIN

GULL WING

.65 mm

DUAL

30

3 mm

HARDWARE/SOFTWARE

CAT24C01YI-G by Onsemi

CAT24C01YI-G

Onsemi

CAT24C01YI-G by Onsemi is an EEPROM with 1KX1 organization, 1024-bit memory density, and 1000000 write/erase cycles. It operates in synchronous mode at a max clock frequency of 0.4 MHz. Ideal for industrial applications requiring reliable non-volatile memory storage.

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.4 mm

1024 bit

EEPROM

1

1

1

8

1024 words

1K

SYNCHRONOUS

85 Cel

-40 Cel

1KX1

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

2/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

CAT24C02YI-G by Onsemi

CAT24C02YI-G

Onsemi

CAT24C02YI-G by Onsemi is a 256x8 EEPROM with a supply voltage of 1.7-5.5V and max clock frequency of 0.4MHz. It is commonly used in industrial applications for data storage and retrieval due to its high endurance of 1,000,000 write/erase cycles and small package size (4.4mm x 3mm).

.4 MHz

100

1000000 Write/Erase Cycles

1010DDDR

R-PDSO-G8

e4

4.4 mm

2048 bit

EEPROM

8

1

1

8

256 words

256

SYNCHRONOUS

85 Cel

-40 Cel

256X8

PLASTIC/EPOXY

TSSOP

TSSOP8,.25

RECTANGULAR

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

SERIAL

260

1.8/5

Not Qualified

1.2 mm

I2C

.000001 Amp

EEPROMs

2 mA

5.5 V

1.7 V

3.3

YES

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

GULL WING

.65 mm

DUAL

3 mm

5 ms

HARDWARE

CAT25010LI-GD by Onsemi

CAT25010LI-GD

Onsemi

CAT25010LI-GD by Onsemi is an EEPROM with 128x8 organization, operating at 5V. It features SPI serial bus type, 10MHz clock frequency, and 1000000 write/erase cycles endurance. Ideal for industrial applications requiring reliable non-volatile memory storage in a compact IN-LINE package style.

10 MHz

100

1000000 Write/Erase Cycles

R-PDIP-T8

e4

9.27 mm

1024 bit

EEPROM

8

1

8

128 words

128

SYNCHRONOUS

85 Cel

-40 Cel

128X8

PLASTIC/EPOXY

DIP

DIP8,.3

RECTANGULAR

IN-LINE

SERIAL

260

2/5

Not Qualified

5.33 mm

SPI

.000002 Amp

EEPROMs

2 mA

5.5 V

2.5 V

5

NO

CMOS

INDUSTRIAL

NICKEL PALLADIUM GOLD

THROUGH-HOLE

2.54 mm

DUAL

7.62 mm

5 ms

HARDWARE/SOFTWARE