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CAT25512YE-GT3

Onsemi

CAT25512YE-GT3 by Onsemi

CAT25512YE-GT3 by Onsemi is an EEPROM with 64KX8 organization, 10 MHz clock frequency, and SPI serial bus type. Ideal for automotive applications, it offers 1000000 write/erase cycles endurance and operates at temperatures ranging from -40 to 125 °C.

Median Price

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Lifecycle Status

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3

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1k+

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Chip Stock

USA . 30,000 parts In-Stock

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Digiode

USA . 2,152 parts In-Stock

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Northwest PG Solutions

USA . 1,944 parts In-Stock

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AZTECH Wire

Italy . 193 parts In-Stock

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Component Stockers USA

USA . 278 parts In-Stock

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$99.990

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SupplyDigital Components

Austria . 3,381 parts In-Stock

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TANS Electronics

Latvia . 2,707 parts In-Stock

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Kulean Microsystems

USA . 1,875 parts In-Stock

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Corphita

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Native Components

USA . 841 parts In-Stock

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Corohmni

South Africa . 426 parts In-Stock

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UHIMA Technologies

Türkiye . 323 parts In-Stock

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Problanco Electronics

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Microchip USA

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Overview

Unlock the power of advanced memory storage with the CAT25512YE-GT3 from Onsemi. This high-quality EEPROM offers reliable data storage in a compact package, perfect for automotive applications. With a durable plastic body and synchronous operation, this EEPROM ensures optimal performance in any environment. Experience seamless write protection, low power consumption, and fast data transfer with the CAT25512YE-GT3. Upgrade your systems today and trust in the quality and expertise of Onsemi for all your memory needs.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material used for the package body provides durability and protection for the EEPROM chip, making it suitable for various operating environments.

Nominal Supply Voltage / Vsup (V): 5

The nominal supply voltage of 5V ensures stable and reliable power delivery to the EEPROM, supporting proper operation and data retention.

Memory Density: 524288 bit

With a high memory density of 524288 bits, this EEPROM chip offers ample storage capacity for storing data and program codes efficiently.

Maximum Clock Frequency (fCLK): 10 MHz

The maximum clock frequency of 10 MHz allows for fast data transfer and read/write operations, making the EEPROM chip suitable for applications requiring high-speed performance.

Endurance: 1000000 Write/Erase Cycles

The EEPROM chip's high endurance of 1,000,000 write/erase cycles ensures long-lasting reliability and durability, making it a robust choice for frequent data updates and modifications.

Technical Specifications

EEPROM CAT25512YE-GT3 attributes and parameters. Explore more EEPROM devices from Onsemi

Specs

Additional Features:

100 YEAR DATA RETENTION

Maximum Clock Frequency (fCLK):

10 MHz

Minimum Data Retention Time:

100

Endurance:

1000000 Write/Erase Cycles

JESD-30 Code:

R-PDSO-G8

JESD-609 Code:

e4

Length:

4.4 mm

Memory Density:

524288 bit

Memory IC Type:

Memory Width:

8

Moisture Sensitivity Level (MSL):

1

No. of Functions:

1

No. of Terminals:

8

No. of Words:

65536 words

No. of Words Code:

64K

Operating Mode:

SYNCHRONOUS

Maximum Operating Temperature:

125 Cel

Minimum Operating Temperature:

-40 Cel

Organization:

64KX8

Package Body Material:

PLASTIC/EPOXY

Package Code:

Package Equivalence Code:

TSSOP8,.25

Package Shape:

Package Style (Meter):

SMALL OUTLINE, THIN PROFILE, SHRINK PITCH

Parallel or Serial:

SERIAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Power Supplies (V):

3/5

Qualification:

Not Qualified

Maximum Seated Height:

1.2 mm

Serial Bus Type:

SPI

Maximum Standby Current:

.000003 Amp

Sub-Category:

EEPROMs

Maximum Supply Current:

3 mA

Maximum Supply Voltage (Vsup):

5.5 V

Minimum Supply Voltage (Vsup):

2.5 V

Nominal Supply Voltage / Vsup (V):

5

Surface Mount:

YES

Technology:

CMOS

Temperature Grade:

Terminal Finish:

Nickel/Palladium/Gold (Ni/Pd/Au)

Terminal Form:

GULL WING

Terminal Pitch:

.65 mm

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Width:

3 mm

Maximum Write Cycle Time (tWC):

5 ms

Write Protection:

HARDWARE/SOFTWARE

Trade Compliance

CAT25512YE-GT3 Memory ICs trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8542.32.00.51

SB

8542.32.00.50

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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