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Varactor Diodes

Varactor diodes are electronic components that are used in electronic circuits as voltage-controlled capacitors. They are also known as varicap diodes or tuning diodes.

Varactor diodes operate based on the properties of their P-N junction, which acts as a variable capacitor when the diode is reverse-biased. When a voltage is applied to the diode, the width of the depletion region changes, causing the capacitance of the diode to vary. By changing the applied voltage, the capacitance of the diode can be tuned to a specific value, making it ideal for frequency tuning in electronic circuits.

Varactor diodes are commonly used in electronic circuits that require tunable frequency response, such as voltage-controlled oscillators, phase-locked loops, and frequency synthesizers. They offer several advantages over other types of components, such as high linearity, low noise, and low power consumption.

Varactor diodes come in different package sizes and capacitance ratings, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.

Varactor Diodes

Available Parts 2,400+

Part RoHS Manufacturer Description Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Minimum Quality Factor Package Body Material Config Variable Capacitance Diode Classification Frequency Band Maximum Output Current Maximum Forward Voltage (VF) Maximum Reverse Recovery Time Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Minimum Operating Temperature Terminal Finish JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features JEDEC-95 Code Diode Cap Tolerance Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Minimum Diode Capacitance Ratio Reference Standard
BB640E6327HTSA1 by Infineon Technologies

BB640E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

TIN

R-PDSO-G2

1

Not Qualified

e3

SILICON

19.5

2803 by Api Technologies

2803

Api Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

150

GLASS

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1

LONG FORM

O-LALF-W2

ISOLATED

Not Qualified

10 pF

DO-7

22 V

SILICON

4.9

BB135,115 by NXP Semiconductors

BB135,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

Not Qualified

19.25 pF

30 V

e3

30

260

SILICON

8.9

1N5446A by Microsemi

1N5446A

Microsemi

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

350

GLASS

SINGLE

ABRUPT

1

LONG FORM

175 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

18 pF

HIGH RELIABILITY

DO-7

10 %

30 V

e0

SILICON

2.6

SMVA1248-079LF by Skyworks Solutions

SMVA1248-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

.02 uA

1

12 V

SMALL OUTLINE

15 V

125 Cel

-55 Cel

R-PDSO-F2

.25 W

17 pF

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

10.8

AEC-Q101

BBY5702VH6327XTSA1 by Infineon Technologies

BBY5702VH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Terminal Finish: TIN;

VARIABLE CAPACITANCE DIODE

TIN

1

e3

SMV1236-040LF by Skyworks Solutions

SMV1236-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

1

CHIP CARRIER

Varactors

15 V

175 Cel

-55 Cel

R-PBCC-N2

1

Not Qualified

.25 W

17 pF

LOW NOISE

8.82 %

15 V

260

SILICON

1.6

BB639E7904HTSA1 by Infineon Technologies

BB639E7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

38.3 pF

LOW INDUCTANCE

5.26 %

30 V

e3

SILICON

9.8

MA46H120 by TE Connectivity

MA46H120

TE Connectivity

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

NO LEAD

2

YES

RECTANGULAR

3000

UNSPECIFIED

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

Varactors

15 V

R-XDSO-N2

Not Qualified

.1 W

1.1 pF

20 V

GALLIUM ARSENIDE

BB914E6327HTSA1 by Infineon Technologies

BB914E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

2

SMALL OUTLINE

TIN

R-PDSO-G3

1

Not Qualified

43.75 pF

1.5% MATCHED SETS AVAILABLE

2.86 %

18 V

e3

SILICON

2.28

SMV1249-079LF by Skyworks Solutions

SMV1249-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

600

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

.02 uA

1

12 V

SMALL OUTLINE

15 V

125 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

.25 W

31 pF

15 V

e3

260

SILICON

11

BBY6602VH6327XTSA1 by Infineon Technologies

BBY6602VH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;

VARIABLE CAPACITANCE DIODE

TIN

1

e3

BB814E6327GR1HTSA1 by Infineon Technologies

BB814E6327GR1HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;

VARIABLE CAPACITANCE DIODE

TIN

1

e3

SMV1247-079LF by Skyworks Solutions

SMV1247-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

1500

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

.02 uA

1

12 V

SMALL OUTLINE

15 V

125 Cel

-55 Cel

Matte Tin (Sn)

R-PDSO-F2

1

Not Qualified

.25 W

7 pF

15 V

e3

40

260

SILICON

9.5

BBY6502VH6327XTSA1 by Infineon Technologies

BBY6502VH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

29.5 pF

4.41 %

15 V

e3

SILICON

10

BB844E6327HTSA1 by Infineon Technologies

BB844E6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G3

1

43.75 pF

CAPACITANCE MATCHED TO 1.5%

2.86 %

18 V

e3

SILICON

3.2

SMV1232-079LF by Skyworks Solutions

SMV1232-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

1400

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

S BAND

1

SMALL OUTLINE

Varactors

15 V

TIN

R-PDSO-F2

1

Not Qualified

.25 W

2.6 pF

LOW NOISE

10 %

15 V

e3

260

SILICON

1.5

BBY5303WE6327HTSA1 by Infineon Technologies

BBY5303WE6327HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

TIN

R-PDSO-G2

1

5.3 pF

9.43 %

6 V

e3

SILICON

1.8

KVX2162-23-0 by Microchip Technology

KVX2162-23-0

Microchip Technology

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY TO L BAND

.05 uA

1

SMALL OUTLINE

Varactors

22 V

125 Cel

-55 Cel

R-PDSO-G3

Not Qualified

10 pF

HIGH RELIABILITY

10 %

22 V

SILICON

1N5470B by Microsemi

1N5470B

Microsemi

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

500

GLASS

SINGLE

ABRUPT

1

LONG FORM

175 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

33 pF

HIGH RELIABILITY

DO-7

5 %

30 V

e0

SILICON

2.9

BB639CE7904HTSA1 by Infineon Technologies

BB639CE7904HTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-G2

1

39 pF

7.01 %

35 V

e3

SILICON

9.5

GC1719-192 by Microchip Technology

GC1719-192

Microchip Technology

VARIABLE CAPACITANCE DIODE; Minimum Quality Factor: 800; Minimum Breakdown Voltage: 60 V; Diode Cap Tolerance: 10 %; Minimum Operating Temperature: -55 Cel; Maximum Reverse Current: .02 uA;

VARIABLE CAPACITANCE DIODE

800

SINGLE

ABRUPT

VERY HIGH FREQUENCY TO KU BAND

.02 uA

1

55 V

125 Cel

-55 Cel

33 pF

10 %

60 V

SILICON

7

SMVA1470-004LF by Skyworks Solutions

SMVA1470-004LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

HYPERABRUPT

ULTRA HIGH FREQUENCY

.02 uA

2

10 V

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G3

1

.25 W

70 pF

LOW NOISE

6 %

10 V

260

SILICON

5

AEC-Q101

BBY40,215 by NXP Semiconductors

BBY40,215

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

.01 uA

1

28 V

SMALL OUTLINE

Varactors

30 V

125 Cel

-55 Cel

TIN

R-PDSO-G3

1

Not Qualified

26 pF

30 V

e3

30

260

SILICON

5

SMV1213-040LF by Skyworks Solutions

SMV1213-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

UNSPECIFIED

SINGLE

HYPERABRUPT

S BAND

1

CHIP CARRIER

Varactors

12 V

175 Cel

-55 Cel

R-XBCC-N2

1

Not Qualified

19 pF

16 V

260

SILICON

2

BBY5502VH6327XTSA1 by Infineon Technologies

BBY5502VH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

1

18.6 pF

5.66 %

16 V

e3

SILICON

2

KVX2162-23-0/TR by Microchip Technology

KVX2162-23-0/TR

Microchip Technology

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

400

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

VERY HIGH FREQUENCY TO L BAND

.05 uA

1

SMALL OUTLINE

22 V

125 Cel

-55 Cel

R-PDSO-G3

10 pF

HIGH RELIABILITY

10 %

22 V

SILICON

1N5470A by Microsemi

1N5470A

Microsemi

VARIABLE CAPACITANCE DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

VARIABLE CAPACITANCE DIODE

AXIAL

WIRE

2

NO

ROUND

500

GLASS

SINGLE

ABRUPT

1

LONG FORM

175 Cel

TIN LEAD

O-LALF-W2

ISOLATED

Not Qualified

.4 W

33 pF

HIGH RELIABILITY

DO-7

10 %

30 V

e0

SILICON

2.9

BB131,135 by NXP Semiconductors

BB131,135

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3; Nominal Diode Capacitance: 12 pF; Maximum Repetitive Peak Reverse Voltage: 30 V;

VARIABLE CAPACITANCE DIODE

YES

Varactors

30 V

TIN

1

12 pF

e3

30

260

SMV2019-079LF by Skyworks Solutions

SMV2019-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

500

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

Varactors

22 V

Matte Tin (Sn)

R-PDSO-F2

1

Not Qualified

.25 W

.8 pF

LOW NOISE

18.75 %

22 V

e3

40

260

SILICON

2.3

BB171X by NXP Semiconductors

BB171X

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

.01 uA

1

30 V

SMALL OUTLINE

32 V

125 Cel

-55 Cel

R-PDSO-G2

1

57 pF

8.77 %

32 V

260

SILICON

20.6

IEC-60134

JDV2S41FS(TPL3) by Toshiba

JDV2S41FS(TPL3)

Toshiba

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 15 pF; Maximum Repetitive Peak Reverse Voltage: 15 V;

VARIABLE CAPACITANCE DIODE

YES

Varactors

15 V

15 pF

BB659C02VH7902XTSA1 by Infineon Technologies

BB659C02VH7902XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

MATTE TIN

R-PDSO-F2

39 pF

7.01 %

35 V

e3

SILICON

9.5

BBY5303WE6327XT by Infineon Technologies

BBY5303WE6327XT

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

1

SMALL OUTLINE

125 Cel

-55 Cel

R-PDSO-G2

5.3 pF

9.43 %

6 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

1.8

1SV325,H3F by Toshiba

1SV325,H3F

Toshiba

VARIABLE CAPACITANCE DIODE;

VARIABLE CAPACITANCE DIODE

BBY5802VH6327XTSA1 by Infineon Technologies

BBY5802VH6327XTSA1

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

1

SMALL OUTLINE

150 Cel

-55 Cel

TIN

R-PDSO-F2

1

18.3 pF

4.89 %

10 V

e3

SILICON

1.15

MA46H202-1056 by TE Connectivity

MA46H202-1056

TE Connectivity

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 2.7 pF; Maximum Repetitive Peak Reverse Voltage: 22 V; Minimum Quality Factor: 2000;

VARIABLE CAPACITANCE DIODE

YES

2000

Varactors

22 V

2.7 pF

SMV1430-040LF by Skyworks Solutions

SMV1430-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

CHIP CARRIER

R-PBCC-N2

1

Not Qualified

260

SILICON

SMVA1253-079LF by Skyworks Solutions

SMVA1253-079LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

.02 uA

1

12 V

SMALL OUTLINE

15 V

125 Cel

-55 Cel

R-PDSO-F2

.25 W

53 pF

15 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

11

AEC-Q101

1SV290 by Toshiba

1SV290

Toshiba

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

.01 uA

1

28 V

SMALL OUTLINE

Varactors

35 V

125 Cel

Tin/Lead (Sn/Pb)

R-PDSO-F2

Not Qualified

45.25 pF

2.5% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR

9.39 %

30 V

e0

SILICON

15

1SV290(TPH2) by Toshiba

1SV290(TPH2)

Toshiba

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 35 V;

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

1SV290B by Toshiba

1SV290B

Toshiba

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

35 V

125 Cel

TIN LEAD

R-PDSO-F2

Not Qualified

2% MATCHED GROUP AVAILABLE, SMALL TRACKING ERROR

9.39 %

30 V

e0

SILICON

14.8

BB639-E7904 by Infineon Technologies

BB639-E7904

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: 38.3 pF; JESD-609 Code: e3; Terminal Finish: MATTE TIN; Maximum Repetitive Peak Reverse Voltage: 35 V;

VARIABLE CAPACITANCE DIODE

YES

Varactors

35 V

MATTE TIN

1

38.3 pF

e3

260

BB639-E7904XT by Infineon Technologies

BB639-E7904XT

Infineon Technologies

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ABRUPT

VERY HIGH FREQUENCY

1

SMALL OUTLINE

150 Cel

-55 Cel

MATTE TIN

R-PDSO-G2

38.3 pF

5.26 %

30 V

e3

SILICON

9.8

SMV2025-040LF by Skyworks Solutions

SMV2025-040LF

Skyworks Solutions

VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

HYPERABRUPT

ULTRA HIGH FREQUENCY

.02 uA

1

19 V

CHIP CARRIER

20 V

175 Cel

-55 Cel

R-PBCC-N2

.25 W

4.65 pF

9.68 %

20 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

2.2

1SV325(TPH3,F) by Toshiba

1SV325(TPH3,F)

Toshiba

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 10 V; Package Style (Meter): SMALL OUTLINE; Variable Capacitance Diode Classification: ABRUPT;

VARIABLE CAPACITANCE DIODE

YES

ABRUPT

SMALL OUTLINE

Varactors

10 V

BB175X by NXP Semiconductors

BB175X

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN; Maximum Time At Peak Reflow Temperature (s): 30;

VARIABLE CAPACITANCE DIODE

YES

Varactors

32 V

TIN

1

e3

30

260

BB202,115 by NXP Semiconductors

BB202,115

NXP Semiconductors

VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

VARIABLE CAPACITANCE DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

1

SMALL OUTLINE

Varactors

6 V

85 Cel

-55 Cel

TIN

R-PDSO-F2

1

Not Qualified

8.59 %

e3

30

260

SILICON

2.5