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BB131,135

NXP Semiconductors

BB131,135 by NXP Semiconductors

NXP Semiconductors' BB131,135 Varactor Diodes are surface mountable with a nominal capacitance of 12pF. These diodes have a max reverse voltage of 30V and can withstand peak reflow temp of 260°C for up to 30s. Ideal for applications requiring variable capacitance like RF tuning circuits.

Median Price

$0.105

Lifecycle Status

Suppliers In-Stock

10

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Flip Electronics (Authorized)

USA . 547,000 parts In-Stock

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547,000

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Rochester

USA . 3,901 parts In-Stock

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$0.113

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$0.094

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$0.084

3,901

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$0.113

$0.094

$0.084

Verical

USA . 3,901 parts In-Stock

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$0.105

3,901

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$0.105

Mouser Electronics

USA . 63 parts In-Stock

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$0.091

63

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$0.091

Distributors (In-Stock)

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Digiode

USA . 385 parts In-Stock

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$0.088

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385

$0.088

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Nova Conductors

Japan . 10 parts In-Stock

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$0.094

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Flip Electronics

USA . 529,000 parts In-Stock

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529,000

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Vyrian

USA . 12,936 parts In-Stock

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VNN

France . 3,092 parts In-Stock

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Anansix

USA . 986 parts In-Stock

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986

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Distributors (Availability)

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Ampacity Inc.

Singapore . 138,588 parts In-Stock

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$0.077

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138,588

$0.077

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Corphita

USA . 3,792 parts In-Stock

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$0.084

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Component Stockers USA

USA . 2,993 parts In-Stock

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$0.090

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$0.080

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$0.070

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2,993

$0.090

$0.080

$0.070

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UNI Independent Distributors

Spain . 4,754 parts In-Stock

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Microchip USA

USA . 236 parts In-Stock

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Overview

Unlock a world of endless possibilities with the BB131,135 Varactor Diodes by NXP Semiconductors. Designed with precision and reliability in mind, these surface mount diodes offer a nominal capacitance of 12 pF, making them ideal for a wide range of applications. Whether you're working on RF tuning circuits or frequency modulators, the BB131,135 delivers unmatched performance and consistency. Trust in NXP's reputation for quality and innovation, and experience the value and benefits this product brings to your projects. Elevate your designs with the BB131,135 today.

Feature Benefit Bullets

Surface Mount: YES

Surface mount design allows for easy and efficient integration onto circuit boards, saving space and enabling automated assembly processes.

Terminal Finish: TIN

TIN terminal finish provides good solderability and a reliable electrical connection, ensuring the diode functions effectively in a circuit.

Nominal Diode Capacitance: 12 pF

Low capacitance value of 12 pF allows for precise tuning and adjustment in RF applications, enhancing signal performance and frequency control.

Maximum Time At Peak Reflow Temperature (s): 30

Can withstand peak reflow temperatures for up to 30 seconds, providing flexibility in manufacturing processes and ensuring the diode's durability during assembly.

Peak Reflow Temperature °C: 260

High peak reflow temperature of 260°C ensures reliable solder joints and mechanical stability, contributing to the overall longevity and performance of the diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it allows for dynamic adjustment of capacitance, enabling frequency modulation and tuning in various RF applications.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum reverse voltage rating of 30 V, it can handle typical voltage fluctuations and protect the circuit from potential damage due to reverse bias conditions.

Technical Specifications

Varactor Diodes BB131,135 attributes and parameters. Explore more Varactor Diodes devices from NXP Semiconductors

Specs

Nominal Diode Capacitance:

12 pF

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BB131,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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