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LV2209

Onsemi

LV2209 by Onsemi

LV2209 by Onsemi is a varactor diode with a min quality factor of 200 and nominal capacitance of 33 pF. It has a breakdown voltage of 25 V, making it suitable for RF tuning applications. With a max power dissipation of 0.28 W, this single-config diode in cylindrical package is ideal for high-frequency circuits.

Median Price

$0.122

Lifecycle Status

Suppliers In-Stock

6

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 28,000 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

28,000

-

$0.132

$0.110

$0.098

DigiKey

USA . 28,000 parts In-Stock

1+ parts

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$0.110

28,000

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$0.110

Verical

USA . 28,000 parts In-Stock

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$0.122

28,000

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$0.122

Distributors (In-Stock)

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Vyrian

USA . 1,657 parts In-Stock

1+ parts

$0.087

100+ parts

-

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1,657

$0.087

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Digiode

USA . 650 parts In-Stock

1+ parts

$0.103

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650

$0.103

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DigiKey Marketplace

USA . 28,000 parts In-Stock

1+ parts

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100+ parts

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$0.110

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28,000

-

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$0.110

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corohmni

South Africa . 417 parts In-Stock

1+ parts

$0.087

100+ parts

-

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417

$0.087

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Corphita

USA . 2,045 parts In-Stock

1+ parts

$0.097

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2,045

$0.097

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Continental Prestige Electronics

USA . 28,000 parts In-Stock

1+ parts

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100+ parts

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$0.152

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28,000

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$0.152

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QUARKTWIN TECHNOLOGY LTD

USA . 13,009 parts In-Stock

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TANS Electronics

Latvia . 7,589 parts In-Stock

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7,589

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A-Z Elektronik GmbH

Germany . 7,253 parts In-Stock

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SupplyDigital Components

Austria . 6,608 parts In-Stock

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Kulean Microsystems

USA . 5,889 parts In-Stock

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Alle Elektronik GmbH

Germany . 4,835 parts In-Stock

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Problanco Electronics

Mexico . 4,267 parts In-Stock

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UHIMA Technologies

Türkiye . 737 parts In-Stock

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737

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Metaverse IC Inc.

Canada . 380 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the LV2209 Varactor Diode by Onsemi. Renowned for their high-quality components, Onsemi delivers superior performance and reliability. Ideal for a wide range of applications, this diode offers a minimum quality factor of 200, ensuring optimal functionality. With a nominal capacitance of 33 pF and a minimum breakdown voltage of 25 V, the LV2209 is the perfect choice for your electronic projects. Trust Onsemi to provide you with the best solutions for all your needs.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and stability, making this varactor diode a reliable choice for various applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material offers durability and protection for the diode, making it suitable for long-term use in different environmental conditions.

Config: SINGLE

Single configuration simplifies the design and integration of the diode into circuits, making it easy to use for designers and manufacturers.

Package Shape: ROUND

Round package shape allows for easier mounting and handling, making it a convenient choice for assembly and installation.

No. of Terminals: 2

Having 2 terminals makes the connection setup straightforward, enabling easy integration into electronic circuits or systems.

Package Style (Meter): CYLINDRICAL

The cylindrical package style ensures compatibility with standard metering equipment, facilitating testing and measurement processes.

Terminal Finish: TIN LEAD

Tin lead terminal finish provides good solderability and conductivity, facilitating secure connections and reliable performance.

Terminal Position: BOTTOM

Bottom terminal position allows for efficient heat dissipation and ease of soldering during assembly, enhancing overall product reliability.

Maximum Power Dissipation: 0.28 W

With a high maximum power dissipation rating, this varactor diode can handle power efficiently and effectively, ensuring stable operation under varying load conditions.

Nominal Diode Capacitance: 33 pF

The specified capacitance value indicates the diode's ability to store and release charge effectively, which is crucial for its performance in tuning or frequency control applications.

Minimum Breakdown Voltage: 25 V

The minimum breakdown voltage of 25 V ensures reliable operation and protection against voltage spikes or overloads, making this diode suitable for demanding conditions.

Peak Reflow Temperature °C: 235

High peak reflow temperature tolerance of 235 °C allows for secure soldering processes without damaging the diode, ensuring its longevity and reliability in manufacturing.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, this product offers adjustable capacitance levels, making it ideal for applications requiring precise tuning or frequency control.

Terminal Form: THROUGH-HOLE

Through-hole terminal form simplifies the mounting and soldering process, making the diode suitable for traditional PCB assembly methods.

Maximum Repetitive Peak Reverse Voltage: 30 V

The maximum repetitive peak reverse voltage rating of 30 V ensures the diode can handle reverse voltage transients safely, adding to the product's reliability in circuits.

Diode Cap Tolerance: 10 %

Having a diode capacitance tolerance of 10% allows for predictable and consistent performance in tuning or filtering applications, enhancing the overall functionality of the diode.

Diode Element Material: SILICON

Utilizing silicon as the diode element material ensures stability, durability, and high performance, making this varactor diode a reliable choice for various electronic applications.

Minimum Diode Capacitance Ratio: 2.5

The minimum diode capacitance ratio of 2.5 indicates the tunable range of capacitance values, allowing for versatile applications requiring variable capacitance levels.

Technical Specifications

Varactor Diodes LV2209 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2209 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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