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LV2205RL1

Onsemi

LV2205RL1 by Onsemi

LV2205RL1 by Onsemi is a single varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and breakdown voltage of 25 V. It is used in applications requiring variable capacitance control at temperatures up to 150 °C.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 830 parts In-Stock

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Vyrian

USA . 183 parts In-Stock

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Kulean Microsystems

USA . 5,273 parts In-Stock

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Problanco Electronics

Mexico . 4,253 parts In-Stock

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TANS Electronics

Latvia . 3,421 parts In-Stock

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SupplyDigital Components

Austria . 1,619 parts In-Stock

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Corphita

USA . 1,442 parts In-Stock

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UHIMA Technologies

Türkiye . 375 parts In-Stock

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Corohmni

South Africa . 173 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the LV2205RL1 Varactor Diode by Onsemi. With a minimum quality factor of 400 and a nominal diode capacitance of 15pF, this diode offers exceptional performance and reliability. Manufactured by Onsemi, a trusted leader in the industry, you can be confident in the quality and durability of this product. Whether you're working on RF tuning circuits, voltage-controlled oscillators, or frequency modulators, the LV2205RL1 is the perfect solution for your applications. Experience the value and benefits that this variable capacitance diode has to offer and take your projects to the next level.

Feature Benefit Bullets

Minimum Quality Factor: 400

High quality factor ensures excellent performance and efficiency in tuning applications.

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material for easy handling and long-term use.

Config: SINGLE

Simplified configuration for straightforward use in various circuit designs.

Package Shape: ROUND

Compact round shape for easy integration into circuit layouts.

No. of Terminals: 2

Simple two-terminal design for easy connectivity.

Package Style (Meter): CYLINDRICAL

Cylindrical package style for standardized meter use.

Maximum Operating Temperature: 150 °C

High maximum operating temperature for reliable performance in various conditions.

Terminal Finish: TIN LEAD

Tin lead finish for enhanced conductivity and solderability.

Terminal Position: BOTTOM

Bottom terminal position for convenient PCB mounting.

Maximum Power Dissipation: 0.28 W

High power dissipation capability for optimal performance in demanding applications.

Nominal Diode Capacitance: 15 pF

Low nominal capacitance for precise tuning and signal control.

Minimum Breakdown Voltage: 25 V

Solid minimum breakdown voltage rating for reliable diode operation.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode for versatile tuning options in different circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form for easy mounting on PCBs.

Diode Cap Tolerance: 10 %

Tight capacitance tolerance for consistent performance across different units.

Diode Element Material: SILICON

Silicon diode element material for reliable and stable electrical characteristics.

Minimum Diode Capacitance Ratio: 2.5

Significant minimum capacitance ratio for effective tuning range in circuits.

Technical Specifications

Varactor Diodes LV2205RL1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY, EUROPEAN PART NUMBER

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2205RL1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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