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LV2205RLRE

Onsemi

LV2205RLRE by Onsemi

LV2205RLRE by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and breakdown voltage of 25 V. It is ideal for applications requiring variable capacitance such as tuning circuits in RF communication systems.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Digiode

USA . 682 parts In-Stock

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Vyrian

USA . 494 parts In-Stock

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Kulean Microsystems

USA . 6,218 parts In-Stock

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Problanco Electronics

Mexico . 6,194 parts In-Stock

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SupplyDigital Components

Austria . 2,194 parts In-Stock

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TANS Electronics

Latvia . 1,542 parts In-Stock

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Corphita

USA . 779 parts In-Stock

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Corohmni

South Africa . 195 parts In-Stock

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UHIMA Technologies

Türkiye . 149 parts In-Stock

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Overview

Unlock the potential of your electronic devices with the LV2205RLRE Varactor Diode by Onsemi. With a minimum quality factor of 400 and a nominal diode capacitance of 15 pF, this high-quality diode offers superior performance and reliability. Perfect for applications requiring variable capacitance, this diode is ideal for tuning circuits in radios, televisions, and communication systems. Trust in Onsemi's reputation for excellence in semiconductor manufacturing and experience the value and benefits that the LV2205RLRE brings to your projects. Elevate your designs with this top-of-the-line varactor diode today.

Feature Benefit Bullets

Minimum Quality Factor: 400

Higher quality factor indicates better performance and reliability, making this varactor diode a good choice for high-frequency applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material is cost-effective and provides good protection for the diode, making it suitable for a wide range of applications.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this varactor diode can withstand heat and operate efficiently in various environments.

Nominal Diode Capacitance: 15 pF

The nominal capacitance of 15 pF indicates that this varactor diode is suitable for tuning circuits and frequency modulation applications.

Minimum Breakdown Voltage: 25 V

The high minimum breakdown voltage of 25 V ensures that the diode can handle voltage spikes and surges, making it reliable for long-term use.

Technical Specifications

Varactor Diodes LV2205RLRE attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2205RLRE Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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