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LV2205

Onsemi

LV2205 by Onsemi

LV2205 by Onsemi is a varactor diode with a min quality factor of 400, nominal capacitance of 15 pF, and breakdown voltage of 25 V. It is used in RF applications for frequency tuning due to its variable capacitance property.

Median Price

$0.132

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 2,000 parts In-Stock

1+ parts

-

100+ parts

$0.132

1k+ parts

$0.110

10k+ parts

$0.098

2,000

-

$0.132

$0.110

$0.098

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 50 parts In-Stock

1+ parts

$0.103

100+ parts

-

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50

$0.103

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Vyrian

USA . 2,076 parts In-Stock

1+ parts

$0.108

100+ parts

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2,076

$0.108

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Corphita

USA . 1,948 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

-

10k+ parts

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1,948

$0.097

-

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Corohmni

South Africa . 280 parts In-Stock

1+ parts

$0.108

100+ parts

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280

$0.108

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Kulean Microsystems

USA . 8,169 parts In-Stock

1+ parts

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8,169

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TANS Electronics

Latvia . 5,742 parts In-Stock

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5,742

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SupplyDigital Components

Austria . 5,468 parts In-Stock

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5,468

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Problanco Electronics

Mexico . 2,085 parts In-Stock

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2,085

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UHIMA Technologies

Türkiye . 205 parts In-Stock

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205

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Overview

Discover the LV2205 by Onsemi, a top-quality varactor diode that offers exceptional performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for a wide range of applications. With a minimum quality factor of 400 and a nominal capacitance of 15pF, this diode provides unmatched value and benefits to customers. Whether you're looking to improve RF tuning or enhance signal processing, the LV2205 is the ideal choice for your project. Trust Onsemi's expertise and choose the LV2205 for all your varactor diode needs.

Feature Benefit Bullets

Minimum Quality Factor: 400

High quality factor ensures better performance and stability, making this varactor diode a reliable choice for frequency tuning applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material provides good insulation and protection for the diode, ensuring durability and reliability in various operating conditions.

Config: SINGLE

Single configuration simplifies the design and integration process, making it easier to use this varactor diode in different electronic circuits.

Package Shape: ROUND

Round shape allows for easy mounting and handling, making it convenient to incorporate this varactor diode in different applications.

No. of Terminals: 2

With only 2 terminals, this varactor diode is easy to install and connect, making it user-friendly for both hobbyists and professionals.

Package Style (Meter): CYLINDRICAL

Cylindrical package style provides a compact and space-saving design, making it suitable for applications where size is a concern.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and long-term reliability, making it easy to integrate this varactor diode into electronic circuits.

Terminal Position: BOTTOM

Bottom terminal position facilitates easy placement and soldering on the circuit board, ensuring a secure connection and stable performance.

Maximum Power Dissipation: 0.28 W

With a high maximum power dissipation, this varactor diode can handle higher power levels without overheating, ensuring reliability in demanding applications.

Nominal Diode Capacitance: 15 pF

Nominal capacitance value of 15 pF allows for precise tuning and adjustment of frequency, making this varactor diode suitable for RF and microwave applications.

Minimum Breakdown Voltage: 25 V

High minimum breakdown voltage of 25 V ensures protection against voltage spikes and surges, increasing the reliability and lifespan of this varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for adjustable capacitance values, making it ideal for frequency tuning and signal modulation in electronic circuits.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides a strong and reliable connection to the circuit board, ensuring stable performance and ease of assembly.

Maximum Repetitive Peak Reverse Voltage: 30 V

High maximum repetitive peak reverse voltage of 30 V ensures protection against reverse voltage conditions, enhancing the reliability and durability of this varactor diode.

Diode Cap Tolerance: 10 %

Capacitance tolerance of 10% allows for precise control and adjustment of capacitance values, making this varactor diode suitable for fine-tuning electronic circuits.

Diode Element Material: SILICON

Silicon diode element material provides good performance and reliability, ensuring stable operation over a wide temperature range and environmental conditions.

Minimum Diode Capacitance Ratio: 2.5

Minimum capacitance ratio of 2.5 allows for a wide range of capacitance values, making this varactor diode versatile and suitable for various frequency tuning applications.

Technical Specifications

Varactor Diodes LV2205 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

25 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

LV2205 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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