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MMBV2109LT1

Onsemi

MMBV2109LT1 by Onsemi

MMBV2109LT1 by Onsemi is a varactor diode with a min quality factor of 200, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 33 pF and operates at a max power dissipation of 0.225 W. This single-configured diode features a gull wing terminal form and tin/lead finish in a small outline package shape.

Median Price

$0.261

Lifecycle Status

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Rochester

USA . 843 parts In-Stock

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$0.261

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$0.217

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$0.193

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Digiode

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MISTER SPROCKETS

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Bristol Electronics

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Atlantic Semiconductor

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PC Components Company LLC

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Mentor Electronics Marketing, LLC

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4 Star Electronics, Inc.

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Semi Source

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Corphita

USA . 1,887 parts In-Stock

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Corohmni

South Africa . 98 parts In-Stock

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CPlus Electronics

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Overview

Unlock a world of possibilities with the MMBV2109LT1 Varactor Diode by Onsemi. Manufactured with precision and expertise, this diode offers unparalleled quality and reliability for high frequency to ultra-high frequency applications. With a minimum Quality Factor of 200 and a nominal capacitance of 33 pF, this diode delivers exceptional performance in a compact package. Whether you're designing RF filters, VCOs, or frequency multipliers, the MMBV2109LT1 provides the value, benefits, and advantages you need to take your projects to the next level. Experience the difference with Onsemi's premier varactor diode today.

Feature Benefit Bullets

Minimum Quality Factor: 200

Higher quality factor indicates better performance and efficiency in high frequency applications.

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides durability and reliability for the diode, making it suitable for various environments.

Config: SINGLE

Single configuration simplifies the design and integration process in circuits.

Variable Capacitance Diode Classification: ABRUPT

Abrupt classification ensures precise and fast changes in capacitance, ideal for frequency tuning applications.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

Wide frequency band coverage allows the diode to be used in a variety of high-frequency applications.

Surface Mount: YES

Surface mount capability enables easy and efficient PCB integration.

Package Shape: RECTANGULAR

Rectangular shape provides space-saving and efficient packaging for the diode.

No. of Terminals: 3

Three terminals allow for versatile connection options in circuits.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the PCB and offers a compact design.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/lead terminal finish ensures good solderability and reliable connections.

Terminal Position: DUAL

Dual terminal position provides flexibility in circuit layout and connections.

Maximum Power Dissipation: 0.225 W

Higher maximum power dissipation allows the diode to handle greater power levels.

Nominal Diode Capacitance: 33 pF

Optimal diode capacitance value for high frequency applications.

Minimum Breakdown Voltage: 30 V

Higher minimum breakdown voltage ensures reliability and protection in high voltage scenarios.

Maximum Time At Peak Reflow Temperature (s): 30

Allows for efficient soldering process without compromising the diode's performance.

Peak Reflow Temperature °C: 235

High peak reflow temperature withstands the soldering process effectively.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode enables frequency tuning and modulation in circuits.

Terminal Form: GULL WING

Gull wing terminal form ensures easy handling and soldering during PCB assembly.

Maximum Repetitive Peak Reverse Voltage: 30 V

Suitable maximum repetitive peak reverse voltage for protection in reverse bias conditions.

Diode Cap Tolerance: 10 %

Tight capacitance tolerance ensures consistent performance and reliability.

Diode Element Material: SILICON

Silicon diode element material offers stability and reliability in various operating conditions.

Minimum Diode Capacitance Ratio: 2.5

Higher minimum capacitance ratio indicates precise and efficient capacitance variation in the diode.

Technical Specifications

Varactor Diodes MMBV2109LT1 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

33 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MMBV2109LT1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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