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MMBV2105L

Onsemi

MMBV2105L by Onsemi

MMBV2105L by Onsemi is a Varactor Diode with a Min Breakdown Voltage of 30 V, Nominal Capacitance of 15 pF, and Quality Factor of 400. It is used in RF applications for tuning circuits due to its Variable Capacitance property.

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Vyrian

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Digiode

USA . 672 parts In-Stock

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Problanco Electronics

Mexico . 7,066 parts In-Stock

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Kulean Microsystems

USA . 6,488 parts In-Stock

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TANS Electronics

Latvia . 4,133 parts In-Stock

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UHIMA Technologies

Türkiye . 842 parts In-Stock

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Corphita

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Corohmni

South Africa . 458 parts In-Stock

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SupplyDigital Components

Austria . 411 parts In-Stock

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Overview

Unlock endless possibilities with the MMBV2105L Varactor Diode by Onsemi. With a minimum quality factor of 400 and a nominal diode capacitance of 15pF, this diode offers high performance and reliability. Whether you're designing RF filters, voltage-controlled oscillators, or frequency multipliers, this diode's small outline package and gull-wing terminal form make it perfect for surface mount applications. Trust in Onsemi's expertise in semiconductor manufacturing to deliver a product that exceeds expectations. Experience the value and benefits of this variable capacitance diode today.

Feature Benefit Bullets

Minimum Quality Factor: 400

Having a high minimum quality factor of 400 ensures superior performance and efficiency of the varactor diode in various electronic applications.

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material provides good protection and durability for the varactor diode, making it suitable for various environmental conditions.

Config: SINGLE

The single configuration simplifies the design and integration process of the varactor diode into electronic circuits, making it easy to use.

Surface Mount: YES

Being surface mountable allows for easy installation and space-saving on PCBs, making it a convenient choice for compact electronic designs.

Package Shape: RECTANGULAR

The rectangular package shape provides a standardized form factor for the varactor diode, allowing for easy compatibility and integration in electronic systems.

No. of Terminals: 3

Having three terminals offers flexibility in connectivity and circuit design, enabling versatile usage in different electronic applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on PCBs, making it suitable for compact electronic devices and applications with limited space.

Terminal Finish: TIN LEAD

The tin lead terminal finish ensures good conductivity and solderability, enhancing the reliability and performance of the varactor diode in circuits.

Terminal Position: DUAL

The dual terminal position offers flexibility in circuit design and connectivity options, making it a versatile choice for various electronic setups.

Maximum Power Dissipation: 0.225 W

With a high maximum power dissipation of 0.225 W, the varactor diode can handle power efficiently, ensuring reliable operation in demanding conditions.

Nominal Diode Capacitance: 15 pF

The nominal diode capacitance of 15 pF indicates the ability of the varactor diode to store and release charge effectively, crucial for its performance in tuning circuits.

Minimum Breakdown Voltage: 30 V

The minimum breakdown voltage of 30 V ensures protection against voltage surges or spikes, enhancing the reliability and longevity of the varactor diode.

Diode Type: VARIABLE CAPACITANCE DIODE

Being a variable capacitance diode, it offers tunability in capacitance, making it suitable for applications requiring precise frequency control or tuning.

Terminal Form: GULL WING

The gull wing terminal form provides mechanical strength and ease of soldering, ensuring secure connections and reliable performance of the varactor diode.

Maximum Repetitive Peak Reverse Voltage: 30 V

With a maximum repetitive peak reverse voltage of 30 V, the varactor diode can withstand reverse voltage stress, ensuring durability in operation.

Diode Cap Tolerance: 10 %

The 10% diode capacitance tolerance ensures consistent performance and accuracy in frequency control or tuning applications, making it a reliable choice.

Diode Element Material: SILICON

Being made of silicon, the diode element material offers good thermal stability and reliability, ensuring consistent performance over a wide temperature range.

Minimum Diode Capacitance Ratio: 2.5

The minimum diode capacitance ratio of 2.5 indicates the range of tunability in capacitance, allowing for precise control and adjustment in frequency tuning applications.

Technical Specifications

Varactor Diodes MMBV2105L attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

15 pF

Diode Element Material:

SILICON

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

400

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBV2105L Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

NSN

5961-01-457-7146, 5961014577146

NIIN

014577146

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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