Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
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Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
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Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
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Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
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I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
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Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
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RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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MMBV2105L by Onsemi is a Varactor Diode with a Min Breakdown Voltage of 30 V, Nominal Capacitance of 15 pF, and Quality Factor of 400. It is used in RF applications for tuning circuits due to its Variable Capacitance property.
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Having a high minimum quality factor of 400 ensures superior performance and efficiency of the varactor diode in various electronic applications.
The plastic/epoxy package body material provides good protection and durability for the varactor diode, making it suitable for various environmental conditions.
The single configuration simplifies the design and integration process of the varactor diode into electronic circuits, making it easy to use.
Being surface mountable allows for easy installation and space-saving on PCBs, making it a convenient choice for compact electronic designs.
The rectangular package shape provides a standardized form factor for the varactor diode, allowing for easy compatibility and integration in electronic systems.
Having three terminals offers flexibility in connectivity and circuit design, enabling versatile usage in different electronic applications.
The small outline package style saves space on PCBs, making it suitable for compact electronic devices and applications with limited space.
The tin lead terminal finish ensures good conductivity and solderability, enhancing the reliability and performance of the varactor diode in circuits.
The dual terminal position offers flexibility in circuit design and connectivity options, making it a versatile choice for various electronic setups.
With a high maximum power dissipation of 0.225 W, the varactor diode can handle power efficiently, ensuring reliable operation in demanding conditions.
The nominal diode capacitance of 15 pF indicates the ability of the varactor diode to store and release charge effectively, crucial for its performance in tuning circuits.
The minimum breakdown voltage of 30 V ensures protection against voltage surges or spikes, enhancing the reliability and longevity of the varactor diode.
Being a variable capacitance diode, it offers tunability in capacitance, making it suitable for applications requiring precise frequency control or tuning.
The gull wing terminal form provides mechanical strength and ease of soldering, ensuring secure connections and reliable performance of the varactor diode.
With a maximum repetitive peak reverse voltage of 30 V, the varactor diode can withstand reverse voltage stress, ensuring durability in operation.
The 10% diode capacitance tolerance ensures consistent performance and accuracy in frequency control or tuning applications, making it a reliable choice.
Being made of silicon, the diode element material offers good thermal stability and reliability, ensuring consistent performance over a wide temperature range.
The minimum diode capacitance ratio of 2.5 indicates the range of tunability in capacitance, allowing for precise control and adjustment in frequency tuning applications.
Varactor Diodes MMBV2105L attributes and parameters. Explore more Varactor Diodes devices from Onsemi
Additional Features:
Minimum Breakdown Voltage:
Config:
Diode Cap Tolerance:
Minimum Diode Capacitance Ratio:
Nominal Diode Capacitance:
Diode Element Material:
Diode Type:
JEDEC-95 Code:
JESD-30 Code:
JESD-609 Code:
No. of Elements:
No. of Terminals:
Package Body Material:
Package Shape:
Package Style (Meter):
Maximum Power Dissipation:
Qualification:
Minimum Quality Factor:
Maximum Repetitive Peak Reverse Voltage:
Sub-Category:
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MMBV2105L Diodes trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
HTS
8541.10.00.80
SB
NSN
5961-01-457-7146, 5961014577146
NIIN
014577146
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
Rochester
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
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Micronetics
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M24308/2-1F
Amphenol
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Body or Shell Style: RECEPTACLE; Body Length: 1.228 inch; No. of Rows Loaded: 2;
2N2222A
Zetex Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
MBR1560CT
Yangzhou Yangjie Electronics
RECTIFIER DIODE; Surface Mount: NO; Maximum Operating Temperature: 150 Cel; Maximum Repetitive Peak Reverse Voltage: 60 V; Technology: SCHOTTKY; Maximum Non Repetitive Peak Forward Current: 150 A;
Tt Electronics Plc
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 250 MHz; Maximum Collector Current (IC): .8 A; JESD-30 Code: O-MBCY-W3;
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Shenzhen Yixinsemi Electronics
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
First Components International
TRANS VOLTAGE SUPPRESSOR DIODE; Surface Mount: YES; Maximum Clamping Voltage: 29.2 V; Nominal Breakdown Voltage: 21.1 V; Polarity: BIDIRECTIONAL; Maximum Repetitive Peak Reverse Voltage: 18 V;
Philips Components
MBRS1100T3G
MBRS1100T3G by Onsemi is a Schottky rectifier diode with a max output current of 1A and forward voltage of 0.75V. It operates in temperatures ranging from -65 to 175°C, making it suitable for power applications. With a reverse test voltage of 100V, this diode is ideal for high-power circuits requiring efficient rectification.
LM107H/883C
Rochester Electronics
OPERATIONAL AMPLIFIER; Temperature Grade: MILITARY; Terminal Form: WIRE; No. of Terminals: 8; Package Shape: ROUND; Package Equivalence Code: CAN8,.2;
LM317T
Analog Devices
ADJUSTABLE POSITIVE SINGLE OUTPUT STANDARD REGULATOR; No. of Terminals: 3; Terminal Form: THROUGH-HOLE; No. of Functions: 1; Package Body Material: PLASTIC/EPOXY; Surface Mount: NO;
Inchange Semiconductor
Other Regulators; No. of Terminals: 3; Surface Mount: NO; Technology: BIPOLAR; Minimum Output Voltage-1: 1.2 V; No. of Outputs: 1;
1N4148WS
Eic Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
M39029/58-360
CONNECTOR ACCESSORY; MIL Conformity: YES; Associated Military - Specifications: MIL-DTL-38999; Contact Gender: MALE; Terminal Type: CRIMP; IEC Conformity: NO;
SVC201SP
VARIABLE CAPACITANCE DIODE; Surface Mount: NO; JESD-609 Code: e0; Maximum Repetitive Peak Reverse Voltage: 9 V; Nominal Diode Capacitance: 39 pF; Terminal Finish: Tin/Lead (Sn/Pb);
1N5465
1N5465 by Onsemi is a varactor diode with a min quality factor of 550 and max reverse current of 0.02 uA. It is used in applications requiring variable capacitance diodes, such as RF tuning circuits due to its abrupt variable capacitance classification. With a nominal capacitance of 15 pF and breakdown voltage of 30 V, it operates b/w -65 to 175 °C for various electronic designs.
1N5696
1N5696 by Onsemi is a varactor diode with 450 min Quality Factor, 6.8 pF nominal capacitance, and 65 V min breakdown voltage. It is used in RF tuning circuits for frequency modulation due to its abrupt variable capacitance classification. Operating temp ranges from -65 to 175 °C.
BB901-T
NXP Semiconductors
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
SVC321SPAC
The Onsemi SVC321SPAC is a single varactor diode with a min quality factor of 200 and a max reverse current of 0.1 uA. It has a package style of in-line and is ideal for applications requiring variable capacitance diodes, such as RF tuning circuits in electronic devices.
SMV1232-079LF
Skyworks Solutions
SMV1232-079LF by Skyworks Solutions is a single hyperabrupt varactor diode with 1400 min. quality factor, 2.6 pF nominal capacitance, and 15 V breakdown voltage. Ideal for S band applications due to its small outline package style and high-quality performance in RF circuits.
BB145
VARIABLE CAPACITANCE DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
MMBV2101LT1
MMBV2101LT1 by Onsemi is a varactor diode with a min quality factor of 450, suitable for high frequency to ultra high frequency applications. It has a nominal capacitance of 6.8 pF and a max power dissipation of 0.225 W, making it ideal for RF circuit designs requiring precise tuning capabilities. The diode's abrupt variable capacitance classification and dual terminal position offer flexibility in various small outline package styles for surface mount applications.
MV1403
MV1403 by Onsemi is a single varactor diode with hyperabrupt capacitance classification. It features a min quality factor of 200, nominal capacitance of 175 pF, and min breakdown voltage of 12 V. Ideal for applications requiring precise tuning in RF circuits or frequency modulators.
MDX584M
Texas Instruments
VARIABLE CAPACITANCE DIODE; Surface Mount: YES; Nominal Diode Capacitance: .1 pF; Minimum Quality Factor: 45; Maximum Repetitive Peak Reverse Voltage: 6 V;
MMBV109LT3
MMBV109LT3 by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 29 pF and a breakdown voltage of 30 V, making it ideal for small outline packages in surface mount configurations. With a max power dissipation of 0.2 W, this variable capacitance diode offers precise tuning capabilities in RF circuits.
TIV24
TIV24 by Texas Instruments is a single varactor diode with a min quality factor of 80, ideal for very high frequency applications. Featuring a nominal capacitance of 28 pF and max power dissipation of 0.25 W, it offers a breakdown voltage of 30 V. The diode's silicon element material and variable capacitance make it suitable for RF tuning circuits in communication systems.
1N5453
1N5453 by Onsemi is a varactor diode with a min quality factor of 200, max reverse current of 0.02 uA, and nominal capacitance of 56 pF. It is used in applications requiring variable capacitance diodes for tuning circuits in electronic devices.
MGV125-08
M/a-com Technology Solutions
MGV125-08 by M/a-com Technology Solutions is a SINGLE varactor diode with HYPERABRUPT classification, ideal for KA BAND applications. Featuring a Min Quality Factor of 4000, 0.3 pF Nominal Diode Capacitance, and 22 V Min Breakdown Voltage, it offers high performance in compact SQUARE package for surface mount applications.
MV2201
Motorola
VARIABLE CAPACITANCE DIODE; Surface Mount: NO; Nominal Diode Capacitance: 6.8 pF; Maximum Repetitive Peak Reverse Voltage: 25 V; Terminal Finish: Tin/Lead (Sn/Pb); JESD-609 Code: e0;
1N5685
1N5685 by Onsemi is a varactor diode with 15pF nominal capacitance, abrupt variable capacitance classification, and 550 min quality factor. It is used in RF applications for voltage-controlled oscillators due to its low reverse current of 0.00000002uA and high breakdown voltage of 45V.
1N5448ARL
1N5448ARL by Onsemi is a Varactor Diode with a Min Quality Factor of 350, Nominal Capacitance of 22 pF, and Breakdown Voltage of 30 V. Ideal for Ultra High Frequency applications due to its Abrupt Variable Capacitance Diode Classification and 0.4 W Power Dissipation capability.
1S553T-HP
Varactors;
BB202,115
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BB204G
VARIABLE CAPACITANCE DIODE; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE; No. of Terminals: 3; Surface Mount: NO; Package Shape: ROUND;
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Supply Digital Components
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$11.90
$7.29
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Total price ≈ $80,197.29
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