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MMBV109LT3

Onsemi

MMBV109LT3 by Onsemi

MMBV109LT3 by Onsemi is a varactor diode with a min quality factor of 200, suitable for very high frequency applications. It has a nominal capacitance of 29 pF and a breakdown voltage of 30 V, making it ideal for small outline packages in surface mount configurations. With a max power dissipation of 0.2 W, this variable capacitance diode offers precise tuning capabilities in RF circuits.

Median Price

$0.225

Lifecycle Status

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3

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1k+

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Digiode

USA . 1,716 parts In-Stock

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Vyrian

USA . 1,483 parts In-Stock

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Bristol Electronics

USA . 1,349 parts In-Stock

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$0.225

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$0.135

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$0.090

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$0.225

$0.135

$0.090

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Problanco Electronics

Mexico . 5,135 parts In-Stock

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SupplyDigital Components

Austria . 1,824 parts In-Stock

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TANS Electronics

Latvia . 1,027 parts In-Stock

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Corphita

USA . 514 parts In-Stock

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Kulean Microsystems

USA . 167 parts In-Stock

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Corohmni

South Africa . 144 parts In-Stock

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UHIMA Technologies

Türkiye . 129 parts In-Stock

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Overview

Discover the power of the MMBV109LT3 varactor diode by Onsemi, known for its superior quality and reliability. With a minimum quality factor of 200, this diode is ideal for very high frequency applications. Its small outline package and gull wing terminal form make it easy to integrate into your designs. Whether you're working on RF amplifiers, voltage-controlled oscillators, or frequency modulators, this diode offers precise variable capacitance with a 10.34% tolerance. Experience enhanced performance and flexibility with the MMBV109LT3 from Onsemi.

Feature Benefit Bullets

Minimum Quality Factor: 200

High quality factor ensures better signal transmission and reception, making this varactor diode ideal for high-performance applications.

Package Body Material: PLASTIC/EPOXY

Plastic/epoxy material provides good thermal stability and mechanical strength, enhancing the durability and reliability of the diode.

Config: SINGLE

Single configuration simplifies circuit design and integration, making it easier for designers to use in their applications.

Frequency Band: VERY HIGH FREQUENCY

Designed for very high frequency applications, ensuring efficient signal processing in high-speed electronic circuits.

Surface Mount: YES

Surface mount capability makes it easy to mount and solder on circuit boards, saving space and enabling automated assembly processes.

Package Shape: RECTANGULAR

Rectangular shape allows for easy placement and alignment on circuit boards, improving overall manufacturing efficiency.

No. of Terminals: 3

Three terminals provide flexibility in circuit connections and enable various configuration options for different applications.

Package Style (Meter): SMALL OUTLINE

Small outline package style saves space on the circuit board and allows for high-density mounting, ideal for compact electronic devices.

Terminal Finish: TIN LEAD

Tin lead terminal finish ensures good solderability and conductivity, enhancing the overall performance and reliability of the diode.

Terminal Position: DUAL

Dual terminal position provides stability and ease of soldering, ensuring secure connections in the circuit.

Maximum Power Dissipation: 0.2W

With a maximum power dissipation of 0.2W, this varactor diode can handle high power levels without overheating or performance degradation.

Nominal Diode Capacitance: 29pF

Nominal capacitance of 29pF ensures precise tuning and frequency control in RF circuits, making it suitable for applications requiring stable capacitance.

Minimum Breakdown Voltage: 30V

Minimum breakdown voltage of 30V provides protection against voltage spikes and ensures reliable operation in high voltage environments.

Peak Reflow Temperature °C: 235

With a peak reflow temperature of 235 °C, this diode can withstand high-temperature soldering processes without damage or performance loss.

Diode Type: VARIABLE CAPACITANCE DIODE

Variable capacitance diode allows for precise tuning of capacitance, making it suitable for frequency modulation and signal processing applications.

Terminal Form: GULL WING

Gull wing terminal form provides mechanical stability and facilitates automated soldering processes, ensuring secure and reliable connections.

Maximum Repetitive Peak Reverse Voltage: 30V

Maximum repetitive peak reverse voltage of 30V ensures protection against reverse voltage spikes, making it suitable for applications with fluctuating voltages.

Diode Cap Tolerance: 10.34%

Diode capacitance tolerance of 10.34% ensures consistent performance and accurate tuning in RF circuits, enhancing overall signal processing capabilities.

Diode Element Material: SILICON

Silicon diode element material provides stable performance over a wide temperature range and ensures long-term reliability in various operating conditions.

Minimum Diode Capacitance Ratio: 5

Minimum diode capacitance ratio of 5 allows for a wide range of capacitance values, providing flexibility in circuit design and tuning applications.

Technical Specifications

Varactor Diodes MMBV109LT3 attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10.34 %

Minimum Diode Capacitance Ratio:

5

Nominal Diode Capacitance:

29 pF

Diode Element Material:

SILICON

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Minimum Quality Factor:

200

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MMBV109LT3 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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