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MMBV2107LT1G

Onsemi

MMBV2107LT1G by Onsemi

MMBV2107LT1G by Onsemi is a varactor diode with a min quality factor of 350, ideal for high frequency to ultra high frequency applications. It has a nominal capacitance of 22 pF and a max power dissipation of 0.225 W, making it suitable for small outline packages in surface mount configurations.

Median Price

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Lifecycle Status

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1k+

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Vyrian

USA . 4,801 parts In-Stock

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Digiode

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AZTECH Wire

Italy . 144 parts In-Stock

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$11.170

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TANS Electronics

Latvia . 8,110 parts In-Stock

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SupplyDigital Components

Austria . 4,799 parts In-Stock

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Kulean Microsystems

USA . 4,097 parts In-Stock

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Problanco Electronics

Mexico . 2,389 parts In-Stock

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Corphita

USA . 1,097 parts In-Stock

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UHIMA Technologies

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Overview

Unlock endless possibilities with the MMBV2107LT1G varactor diode from Onsemi. As a trusted manufacturer in the industry, Onsemi ensures top-notch quality and reliability in every product they deliver. Ideal for applications in high frequency to ultra-high frequency bands, this varactor diode offers superior performance and precise variable capacitance. With its small outline package style and dual terminal position, the MMBV2107LT1G is perfect for space-constrained designs. Experience the value and benefits of this diode as it provides customers with unmatched efficiency and optimal functionality for their electronic projects.

Feature Benefit Bullets

Minimum Quality Factor: 350

A high minimum quality factor ensures that the varactor diode has excellent frequency stability and low signal loss, making it ideal for high-performance applications.

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material provides good insulation and protection for the diode, making it durable and reliable for various environment conditions.

Frequency Band: HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

This varactor diode is designed to operate efficiently in a wide frequency range, making it versatile for different RF applications including high frequency and ultra high frequency.

Surface Mount: YES

Being surface mountable allows for easy and convenient mounting on PCBs, saving space and simplifying the manufacturing process of electronic devices.

Nominal Diode Capacitance: 22 pF

The nominal capacitance value of 22 pF indicates the range of capacitance that can be adjusted by varying the applied voltage, making it suitable for tuning circuits in RF applications.

Technical Specifications

Varactor Diodes MMBV2107LT1G attributes and parameters. Explore more Varactor Diodes devices from Onsemi

Specs

Additional Features:

HIGH Q, HIGH RELIABILITY

Minimum Breakdown Voltage:

30 V

Config:

SINGLE

Diode Cap Tolerance:

10 %

Minimum Diode Capacitance Ratio:

2.5

Nominal Diode Capacitance:

22 pF

Diode Element Material:

SILICON

Frequency Band:

HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.225 W

Qualification:

Not Qualified

Minimum Quality Factor:

350

Maximum Repetitive Peak Reverse Voltage:

30 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Variable Capacitance Diode Classification:

ABRUPT

Trade Compliance

MMBV2107LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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