Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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Small Signal Field Effect Transistors (FET) are electronic devices used in low-power applications to amplify and switch small signals. They are commonly used in applications such as audio amplifiers, signal processing, and low-power digital circuits.Small Signal FETs are designed to handle low-power levels and operate at low to medium frequencies, typically in the range of a few Hz to several MHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.Proper use of Small Signal FETs is important to ensure optimal performance, reliability, and compatibility with other components in the circuit. Small Signal FETs are often used in conjunction with other components, such as capacitors and resistors, to form complete low-power electronic circuits.
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Selected
BSS138W-E6327
Infineon Technologies
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Operating Temperature: 150 Cel; Transistor Application: SWITCHING;
SINGLE WITH BUILT-IN DIODE
60 V
.28 A
3.5 ohm
METAL-OXIDE SEMICONDUCTOR
4.2 pF
R-PDSO-G3
1
3
ENHANCEMENT MODE
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
260
N-CHANNEL
.5 W
FET General Purpose Power
YES
GULL WING
DUAL
SWITCHING
SILICON
BSS138W-E6433
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Feedback Capacitance (Crss): 4.2 pF; Package Body Material: PLASTIC/EPOXY;
AO4407L
Alpha & Omega Semiconductor
AO4407L by Alpha & Omega Semiconductor is a P-CHANNEL FET used for switching applications. It has a min DS breakdown voltage of 30V, max drain current of 12A, and max operating temperature of 150°C.
30 V
12 A
.038 ohm
423 pF
R-PDSO-G8
8
P-CHANNEL
3.1 W
AO4606
N-CHANNEL AND P-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Drain-Source On Resistance: .03 ohm; Package Style (Meter): SMALL OUTLINE;
SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE
6 A
.03 ohm
50 pF
2
N-CHANNEL AND P-CHANNEL
2 W
AO4441L
AO4441L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 60V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and operates in ENHANCEMENT MODE. With 4A ID and 0.1 ohm RDS(on), it offers high performance in a small outline package suitable for various electronic designs.
4 A
.1 ohm
35 pF
AO3401L
AO3401L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage and 4.2A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150 °C, featuring 0.05 ohm RDS(on) and 77 pF Crss capacitance.
4.2 A
.05 ohm
77 pF
TO-236
AO3402L
AO3402L by Alpha & Omega Semiconductor is a N-CHANNEL FET with 30V DS Breakdown Voltage and 4A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150°C. Features include 0.055 ohm RDS(on), 41pF Crss, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
.055 ohm
41 pF
AO3409L
AO3409L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 2.6A and 0.13 ohm RDS(ON), operating in the temperature range of -55 to 150 °C. The transistor has a GULL WING terminal form and METAL-OXIDE SEMICONDUCTOR technology, making it suitable for surface mount configurations.
2.6 A
.13 ohm
53 pF
AO3413L
AO3413L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage and 3A ID. Ideal for SWITCHING applications, it operates in ENHANCEMENT MODE at -55 to 150°C. Featuring a 0.097 ohm RDS(ON) and 49pF Crss, this MOSFET is designed for surface mount with GULL WING terminals.
20 V
3 A
.097 ohm
49 pF
AO3419L
AO3419L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 3.5A and 0.075 ohm RDS(ON), operating in the temperature range of -55 to 150 °C. The transistor has a GULL WING terminal form, RECTANGULAR package shape, and METAL-OXIDE SEMICONDUCTOR technology.
3.5 A
.075 ohm
62 pF
AO4407AL
AO4407AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 12A, 0.013 ohm RDS(ON), and 295pF Crss. Operating from -55 to 150 °C, this MOSFET has GULL WING terminals in an 8-terminal SMALL OUTLINE package.
.013 ohm
295 pF
AO4485L
AO4485L by Alpha & Omega Semiconductor is a P-CHANNEL FET with 40V DS Breakdown Voltage and 10A ID. It's used for SWITCHING applications in ENHANCEMENT MODE, featuring 0.015 ohm RDS(ON) and 180pF Crss.
40 V
10 A
.015 ohm
180 pF
1.7 W
AO4447AL
AO4447AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, 17A ID, and 0.007 ohm RDS(ON). Ideal for SWITCHING applications, it features a SINGLE configuration with built-in diode and resistor. Operating in ENHANCEMENT MODE, this MOSFET has a max temp of 150°C and -55°C min temp.
SINGLE WITH BUILT-IN DIODE AND RESISTOR
17 A
.007 ohm
564 pF
AO3401AL
AO3401AL by Alpha & Omega Semiconductor is a P-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and GULL WING terminals. Operating in ENHANCEMENT MODE, it has a max ID of 4.3A and RDS(on) of 0.044 ohm, making it suitable for various small outline surface mount designs.
4.3 A
.044 ohm
81 pF
1.4 W
AO7800
AO7800 by Alpha & Omega Semiconductor is a N-CHANNEL FET with 2 elements and built-in diode for SWITCHING applications. It operates in ENHANCEMENT MODE, has 20V DS Breakdown Voltage, 0.3W Power Dissipation, and 0.9A Drain Current. With GULL WING terminals, it's a small outline package suitable for surface mount technology.
.9 A
.3 ohm
14 pF
R-PDSO-G6
6
.3 W
SFT1407-TL-E
Onsemi
SFT1407-TL-E by Onsemi is a N-CHANNEL FET for SWITCHING applications. It features a 45V DS Breakdown Voltage, 14A ID, and 0.028 ohm RDS(on). With GULL WING terminals and ENHANCEMENT MODE operation, it offers high performance in a SMALL OUTLINE package.
DRAIN
SINGLE
45 V
14 A
.028 ohm
190 pF
R-PSSO-G2
e6
1 W
20 W
Tin/Bismuth (Sn/Bi)
LSK489TO-716LROHS
Linear Integrated Systems
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: NO; Maximum Power Dissipation (Abs): .5 W; No. of Terminals: 6; Maximum Feedback Capacitance (Crss): 3 pF;
SEPARATE, 2 ELEMENTS
JUNCTION
3 pF
TO-71
O-XBCY-W6
DEPLETION MODE
UNSPECIFIED
ROUND
CYLINDRICAL
FET General Purpose Small Signal
NO
WIRE
BOTTOM
AMPLIFIER
LSK489SOT-236LROHS
LSK489SOT-236LROHS by Linear Integrated Systems is a N-CHANNEL FET with 2 elements, ideal for amplifier applications. Featuring DEPLETION MODE operation, it has 6 terminals in GULL WING shape. With max power dissipation of 0.5W and operating temperature range from -55 to 150 °C, this JUNCTION FET offers high performance in a SMALL OUTLINE package.
DMN2400UFB4-7B
Diodes Incorporated
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .47 W; Maximum Time At Peak Reflow Temperature (s): 30; JESD-30 Code: R-PBCC-N3;
.75 A
.55 ohm
R-PBCC-N3
e4
CHIP CARRIER
.47 W
Not Qualified
NICKEL PALLADIUM GOLD
NO LEAD
30
DMN2300UFB-7B
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.2 W; Package Shape: RECTANGULAR; Maximum Operating Temperature: 150 Cel;
HIGH RELIABILITY, LOW THRESHOLD
1.78 A
1.32 A
.175 ohm
1.2 W
BSS84PWL6327
BSS84PWL6327 by Infineon is a P-CHANNEL FET with 60V DS breakdown voltage and 0.15A max drain current. Ideal for small outline applications, it features a built-in diode, 8 ohm max on resistance, and operates in enhancement mode at up to 150°C.
AVALANCHE RATED, LOGIC LEVEL COMPATIBLE
.15 A
8 ohm
3.8 pF
e3
Other Transistors
Matte Tin (Sn)
40
RW1E025RPT2CR
ROHM
ROHM's RW1E025RPT2CR is a P-CHANNEL FET with 30V DS breakdown voltage, ideal for SWITCHING applications. It features a max ID of 2.5A, 0.075 ohm RDS(on), and operates in ENHANCEMENT MODE. With a small outline package style and peak reflow temp of 260°C, it offers efficient performance in various electronic devices.
2.5 A
R-PDSO-F6
e2
.7 W
TIN COPPER
FLAT
10
SI4286DY-T1-GE3
Vishay Intertechnology
Vishay Intertechnology's SI4286DY-T1-GE3 is a N-channel FET with 2 elements & built-in diode. It has a max drain current of 7A, on-resistance of 0.0325 ohm, and operates in enhancement mode for switching applications. The transistor comes in a small outline package with Gull Wing terminals, suitable for surface mount assembly up to 260°C.
7 A
.0325 ohm
2.9 W
TSM2N7002KCXRFG
Taiwan Semiconductor
TSM2N7002KCXRFG by Taiwan Semiconductor is a N-CHANNEL FET with 60V DS breakdown voltage, ideal for SWITCHING applications. It features a single configuration with built-in diode, GULL WING terminals, and operates in ENHANCEMENT MODE. With max drain current of 0.3A and drain-source resistance of 2 ohm, it offers reliable performance in small outline packages.
.3 A
2 ohm
6 pF
.357 W
TIN
DMS3017SSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.79 W; Minimum DS Breakdown Voltage: 30 V; Maximum Drain-Source On Resistance: .012 ohm;
HIGH RELIABILITY
.008 A
.012 ohm
1.79 W
MATTE TIN
DMS3019SSD-13
N-CHANNEL; Configuration: SEPARATE, 2 ELEMENTS WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.79 W; Transistor Element Material: SILICON; Moisture Sensitivity Level (MSL): 1;
9 A
.007 A
2V7002LT3G
2V7002LT3G by Onsemi is a N-CHANNEL FET with a min DS Breakdown Voltage of 60V, ideal for SWITCHING applications. It features a Max Drain Current of 0.115A and Max Power Dissipation of 0.3W. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE and has a max operating temperature of 150°C.
.115 A
7.5 ohm
5 pF
AEC-Q101
DMN3029LFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1 W; Maximum Drain-Source On Resistance: .0186 ohm; Maximum Drain Current (ID): 5.3 A;
8 A
5.3 A
.0186 ohm
S-PDSO-N5
5
SQUARE
DMS3016SFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.08 W; Package Shape: SQUARE; Case Connection: DRAIN;
10.2 A
2.08 W
N0302P-T1-AT
Renesas Electronics
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 1.3 W; No. of Elements: 1; Maximum Drain Current (ID): 4.4 A;
4.4 A
.15 ohm
R-PDSO-F3
NOT SPECIFIED
1.3 W
NTMFS4833NST1G
NTMFS4833NST1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage and 156A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 86.2W. The transistor features a built-in diode, current sensor, and Kelvin sensor in an 8-terminal package suitable for surface mount technology.
SINGLE WITH BUILT-IN DIODE AND CURRENT AND KELVIN SENSOR
156 A
16 A
R-PDSO-F8
86.2 W
NTMFS4833NST3G
NTMFS4833NST3G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, ideal for SWITCHING applications. It features a max ID of 16A and 86.2W power dissipation in a small outline package style. Operating at up to 150 °C, it offers high performance in various electronic devices.
NTMFS4854NST1G
NTMFS4854NST1G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 149A Drain Current. Ideal for SWITCHING applications, it features a built-in diode, current sensor, and operates in ENHANCEMENT MODE. With a max power dissipation of 86.2W and operating temperature up to 150 °C, this transistor is suitable for high-power electronic systems.
25 V
149 A
15.2 A
NTMFS4854NST3G
NTMFS4854NST3G by Onsemi is a N-CHANNEL FET with 25V DS Breakdown Voltage and 149A Drain Current. It is used for SWITCHING applications, operates in ENHANCEMENT MODE, and has a max power dissipation of 86.2W. The transistor features a built-in diode, current sensor, and Kelvin sensor in an 8-terminal package suitable for surface mount assembly.
NTR1P02LT1H
NTR1P02LT1H by Onsemi is a P-CHANNEL FET with 20V DS Breakdown Voltage, ideal for SWITCHING applications. It features SINGLE configuration with BUILT-IN DIODE and can handle up to 1.3A Drain Current. This ENHANCEMENT MODE transistor comes in a RECTANGULAR package with GULL WING terminals, suitable for surface mount technology.
1.3 A
DMP210DUFB4-7B
DMP210DUFB4-7B by Diodes Inc. is a P-CHANNEL FET with 20V DS Breakdown Voltage, 0.2A Drain Current, and 5.5 ohm On Resistance. Ideal for SWITCHING applications in ENHANCEMENT MODE, it's a surface mount chip carrier with Ni/Pd/Au finish, operating up to 150°C.
.2 A
.14 A
5.5 ohm
20 pF
.35 W
Nickel/Palladium/Gold (Ni/Pd/Au)
NTMFS4925NET1G
NTMFS4925NET1G by Onsemi is a N-CHANNEL FET with 30V DS Breakdown Voltage, 48A ID, and 0.001 ohm RDS. Ideal for power management applications due to its 23.2W Pdiss and ENHANCEMENT MODE operation at up to 150 °C. Suitable for surface mount designs with PLASTIC/EPOXY package and built-in diode configuration.
48 A
16.7 A
.001 ohm
R-PDSO-F5
23.2 W
DMN26D0UFB4-7B
DMN26D0UFB4-7B by Diodes Inc. is a N-channel FET with 20V DS breakdown voltage and 0.24A max drain current, ideal for switching applications. It operates in enhancement mode with 3ohm RDS(on) and can handle up to 0.35W power dissipation. Package style is chip carrier, suitable for surface mount assembly at max temp of 150°C.
ESD PROTECTION, HIGH RELIABILITY, LOW THRESHOLD
.24 A
3 ohm
NTMS5835NLR2G
NTMS5835NLR2G by Onsemi is a N-CHANNEL FET with 40V DS Breakdown Voltage and 12A Drain Current. Ideal for applications requiring high power dissipation up to 2.6W, such as in small outline packages where space is limited. Operating in enhancement mode, it offers low on-resistance of 0.014 ohm for efficient performance at temperatures up to 150 °C.
9.2 A
.014 ohm
2.6 W
Tin (Sn)
NTMS5838NLR2G
NTMS5838NLR2G by Onsemi is a N-CHANNEL FET with 40V DS breakdown voltage, 7.5A max drain current, and 0.0308 ohm RDS(on). Ideal for applications requiring high power dissipation in small outline packages at up to 150°C operating temperature.
7.5 A
5.8 A
.0308 ohm
2N6660JTX02
Vishay Intertechnology's 2N6660JTX02 is a N-CHANNEL FET with 60V DS breakdown voltage and 0.99A max drain current. Ideal for amplifier applications, it features a built-in diode, 3 ohm max on resistance, and operates in enhancement mode at up to 150°C.
.99 A
10 pF
TO-205AD
O-MBCY-W3
METAL
6.25 W
FET General Purpose Powers
2N7002-13-F
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .54 W; Terminal Position: DUAL; Transistor Application: SWITCHING;
.21 A
13.5 ohm
.54 W
NMLU1210TWG
NMLU1210TWG by Onsemi is an N-CHANNEL FET for SWITCHING applications. It features a max Drain Current of 1.16A, Drain-Source On Resistance of 0.032 ohm, and operates in ENHANCEMENT MODE. This SMALL OUTLINE transistor with METAL-OXIDE SEMICONDUCTOR technology is ideal for compact electronic devices requiring efficient power management.
COMPLEX
1.16 A
.032 ohm
S-XDSO-N6
DMG7702SFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-609 Code: e3; Transistor Element Material: SILICON;
9.5 A
.01 ohm
2.2 W
DMG7702SFG-7
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Terminal Position: DUAL; Maximum Operating Temperature: 150 Cel;
DMP1096UCB4-7
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE AND RESISTOR; Surface Mount: YES; Maximum Power Dissipation (Abs): .82 W; Maximum Drain Current (Abs) (ID): 2.6 A; Maximum Drain-Source On Resistance: .152 ohm;
12 V
2.4 A
.152 ohm
S-PBGA-B4
e1
4
GRID ARRAY
.82 W
TIN SILVER COPPER
BALL
DMP3008SFG-13
P-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1;
8.6 A
7.1 A
.025 ohm
DMS3012SFG-13
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2.2 W; JESD-609 Code: e3; Maximum Drain-Source On Resistance: .01 ohm;
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