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2V7002LT3G

Onsemi

2V7002LT3G by Onsemi

2V7002LT3G by Onsemi is a N-CHANNEL FET with a min DS Breakdown Voltage of 60V, ideal for SWITCHING applications. It features a Max Drain Current of 0.115A and Max Power Dissipation of 0.3W. This SMALL OUTLINE transistor operates in ENHANCEMENT MODE and has a max operating temperature of 150°C.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

14

In-Stock Inventory

1k+

Distributors (Authorized)

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Rochester

USA . 12,872 parts In-Stock

1+ parts

-

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$0.050

1k+ parts

$0.041

10k+ parts

$0.037

12,872

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$0.050

$0.041

$0.037

Verical

USA . 12,872 parts In-Stock

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$0.046

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$0.046

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Digiode

USA . 2,142 parts In-Stock

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$0.039

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2,142

$0.039

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Bristol Electronics

USA . 1,538 parts In-Stock

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$0.188

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$0.094

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$0.037

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1,538

$0.188

$0.094

$0.037

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Component Sense

UK . 2,375,931 parts In-Stock

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Greenchips

USA . 140,000 parts In-Stock

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SIE Connect GmbH - GreenChips

Germany . 140,000 parts In-Stock

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Flip Electronics

USA . 20,000 parts In-Stock

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NexGen Digital

USA . 10,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 9,510 parts In-Stock

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Vyrian

USA . 5,158 parts In-Stock

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VNN

France . 1,894 parts In-Stock

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Microfarads

USA . 1,453 parts In-Stock

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Nova Conductors

Japan . 73 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 11,988 parts In-Stock

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$0.035

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Corphita

USA . 1,932 parts In-Stock

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Corohmni

South Africa . 376 parts In-Stock

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$0.041

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376

$0.041

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Component Stockers USA

USA . 18 parts In-Stock

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$0.370

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Perfect Parts

USA . 100,800 parts In-Stock

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Infinite Electronics LLP (Excess)

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Kepictronics

USA . 9,875 parts In-Stock

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RC Electronics

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Kulean Microsystems

USA . 6,804 parts In-Stock

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TANS Electronics

Latvia . 6,389 parts In-Stock

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Problanco Electronics

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Continental Prestige Electronics

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SupplyDigital Components

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iodParts Technologies Inc.

India . 900 parts In-Stock

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UHIMA Technologies

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Bastille Electronics

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Argo Parts USA

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Overview

Looking to enhance your electronic devices with top-quality components? Look no further than the 2V7002LT3G by Onsemi. As a leading manufacturer in the industry, Onsemi delivers cutting-edge Small Signal Field Effect Transistors that are perfect for switching applications. With a robust design and reliable performance, this N-CHANNEL transistor offers unparalleled value and benefits to customers. Upgrade your electronics today with the 2V7002LT3G and experience the difference quality makes.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, making it a reliable choice.

Polarity or Channel Type: N-CHANNEL

N-channel transistors typically have better performance and lower resistance, making this product ideal for high-speed switching applications.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode adds versatility to the transistor, allowing for more functionality in circuit design.

Transistor Application: SWITCHING

Specifically designed for switching applications, ensuring efficient performance in such scenarios.

Surface Mount: YES

Surface mount capability makes it easily integrated into compact circuit designs, saving space and simplifying assembly.

Minimum DS Breakdown Voltage: 60 V

The high breakdown voltage ensures the transistor can withstand higher voltages, increasing its versatility in different applications.

Package Shape: RECTANGULAR

Rectangular packaging is easy to handle and fits well on circuit boards, making it convenient for assembly.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and are ideal for automated assembly processes.

Operating Mode: ENHANCEMENT MODE

Enhancement mode transistors offer precise control and faster switching speeds, enhancing overall performance.

Maximum Drain Current (Abs) (ID): 0.115 A

With a high maximum drain current, this transistor can handle heavy loads and provide reliable operation.

No. of Terminals: 3

Having three terminals allows for versatile connections, enabling flexibility in circuit design.

Maximum Power Dissipation (Abs): 0.3 W

This transistor can dissipate heat effectively, ensuring stable operation even under high power conditions.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on the circuit board, making it suitable for compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology offers high performance and low power consumption, making this transistor energy-efficient.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this transistor can withstand harsh environments and continuous operation.

Transistor Element Material: SILICON

Silicon-based transistors offer high reliability and performance, making this product a durable choice.

Minimum Operating Temperature: -55 °C

The wide temperature range allows the transistor to operate in both hot and cold environments, increasing its versatility.

Terminal Finish: MATTE TIN

Matte tin finish provides excellent solderability and ensures reliable connections in various applications.

Maximum Drain-Source On Resistance: 7.5 ohm

Low drain-source on resistance ensures efficient power delivery and minimal voltage drop across the transistor.

Terminal Position: DUAL

Dual terminal position offers flexibility in circuit layout and allows for customized connections.

Maximum Time At Peak Reflow Temperature (s): 30

This transistor can withstand peak reflow temperatures for a sufficient amount of time during manufacturing processes.

Peak Reflow Temperature °C: 260

With a high peak reflow temperature, this transistor can endure harsh manufacturing conditions without damage.

Maximum Feedback Capacitance (Crss): 5 pF

Low feedback capacitance minimizes signal loss and ensures high-frequency performance in the transistor.

Reference Standard: AEC-Q101

Compliant with AEC-Q101 automotive quality standard, ensuring reliability and durability in automotive applications.

Technical Specifications

Small Signal Field Effect Transistors (FET) 2V7002LT3G attributes and parameters. Explore more Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Minimum DS Breakdown Voltage:

60 V

Maximum Drain Current (Abs) (ID):

.115 A

Maximum Drain Current (ID):

.115 A

Maximum Drain-Source On Resistance:

7.5 ohm

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

5 pF

JEDEC-95 Code:

TO-236

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-55 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Reference Standard:

AEC-Q101

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2V7002LT3G Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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