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Microwave Mixer & Detector Diodes

Microwave mixer and detector diodes are electronic components used in microwave and radio frequency circuits for signal processing, modulation, and demodulation.

A microwave mixer diode is a three-terminal device that allows two input signals to be mixed together to produce a single output signal with a frequency that is the sum or difference of the input frequencies. The mixer diode uses non-linear properties of the P-N junction to produce the desired output signal. The output signal can be amplified, filtered, or demodulated to extract the desired information.

A microwave detector diode is a two-terminal device that is used to detect and measure microwave and radio frequency signals. The detector diode uses the non-linear properties of the P-N junction to convert the incoming signal into a DC voltage. The output voltage is proportional to the amplitude of the input signal and can be used to measure the signal strength or to demodulate the signal to extract the desired information.

Microwave mixer and detector diodes are widely used in various applications, such as wireless communication systems, satellite communication, radar, and instrumentation. They offer several advantages over other types of components, such as high sensitivity, low noise, and wide bandwidth.

Microwave mixer and detector diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.C84

Microwave Mixer & Detector Diodes

Available Parts 62

Part# Info Specs
Part RoHS Manufacturer Description Additional Features Minimum Breakdown Voltage Case Connection Config Maximum Diode Capacitance Nominal Diode Capacitance Diode Element Material Diode Type Maximum Forward Voltage (VF) Frequency Band Maximum Impedance Minimum Impedance JEDEC-95 Code JESD-30 Code JESD-609 Code Moisture Sensitivity Level (MSL) Maximum Noise Figure Maximum Non Repetitive Peak Forward Current No. of Elements No. of Terminals Maximum Operating Frequency Minimum Operating Frequency Maximum Operating Temperature Minimum Operating Temperature Maximum Output Current Package Body Material Package Shape Package Style (Meter) Peak Reflow Temperature (C) Maximum Power Dissipation Qualification Reference Standard Maximum Repetitive Peak Reverse Voltage Maximum Reverse Current Reverse Test Voltage Sub-Category Surface Mount Minimum Tangential Signal Sensitivity Technology Terminal Finish Terminal Form Terminal Position Maximum Time At Peak Reflow Temperature (s) Schottky Barrier Type
S3060S by Toshiba

S3060S

Toshiba

MIXER DIODE; Surface Mount: YES; Maximum Noise Figure: 5 dB; Maximum Operating Frequency: 12 GHz; Minimum Impedance: 50 ohm; Diode Element Material: GALLIUM ARSENIDE;

GALLIUM ARSENIDE

MIXER DIODE

250 ohm

50 ohm

e0

5 dB

12 GHz

4 GHz

150 Cel

Microwave Mixer Diodes

YES

Tin/Lead (Sn/Pb)

BAT15-099LRH-E6327 by Infineon Technologies

BAT15-099LRH-E6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Moisture Sensitivity Level (MSL): 1; Schottky Barrier Type: LOW BARRIER; No. of Elements: 2;

4 V

.35 pF

SILICON

MIXER DIODE

.41 V

X BAND

1

2

150 Cel

-55 Cel

.11 A

260

.1 W

Other Diodes

YES

SCHOTTKY

LOW BARRIER

BA591,135 by NXP Semiconductors

BA591,135

NXP Semiconductors

BA591,135 by NXP Semiconductors is a surface-mount variable capacitance diode ideal for microwave applications. It features a nominal diode capacitance of 0.8 pF and can withstand a peak reverse voltage of 35 V. With a peak reflow temp of 260 °C, it's perfect for compact designs.

.8 pF

VARIABLE CAPACITANCE DIODE

e3

1

260

35 V

Varactors

YES

TIN

30

SMS7621-092 by Skyworks Solutions

SMS7621-092

Skyworks Solutions

SMS7621-092 by Skyworks Solutions is a microwave mixer diode with Schottky technology. It operates in K band frequency range, has 2 elements, and a low barrier Schottky diode element material. Ideal for applications requiring common bipolar terminal configuration and surface mount package style, with a max power dissipation of 0.075W.

2 V

COMMON BIPOLAR TERMINAL, 2 ELEMENTS

SILICON

MIXER DIODE

.32 V

K BAND

R-XBCC-N4

2

4

150 Cel

-65 Cel

.05 A

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

NOT SPECIFIED

.075 W

YES

SCHOTTKY

NO LEAD

BOTTOM

NOT SPECIFIED

LOW BARRIER

BA892H6327XTSA1 by Infineon Technologies

BA892H6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BA892H6433XTMA1 by Infineon Technologies

BA892H6433XTMA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BA892H6127XTSA1 by Infineon Technologies

BA892H6127XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BA892H6770XTSA1 by Infineon Technologies

BA892H6770XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

MATTE TIN

FLAT

DUAL

BAT6202WH6327XTSA1 by Infineon Technologies

BAT6202WH6327XTSA1

Infineon Technologies

Infineon's BAT6202WH6327XTSA1 is a Schottky mixer diode with low barrier type, operating at ultra high frequency. With a max forward voltage of 1V and output current of 0.02A, it is suitable for microwave applications requiring small outline surface mount packages. The diode's max power dissipation is 0.1W, making it ideal for high temperature environments up to 150°C.

SINGLE

.6 pF

SILICON

MIXER DIODE

1 V

ULTRA HIGH FREQUENCY

R-PDSO-F2

e3

1

2

150 Cel

.02 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.1 W

40 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

FLAT

DUAL

LOW BARRIER

BA89202VH6327XTSA1 by Infineon Technologies

BA89202VH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.4 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

AEC-Q101

YES

TIN

FLAT

DUAL

BAT1504RE6327HTSA1 by Infineon Technologies

BAT1504RE6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.25 pF

SILICON

MIXER DIODE

X BAND

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

YES

SCHOTTKY

GULL WING

DUAL

LOW BARRIER

BAT1705E6327HTSA1 by Infineon Technologies

BAT1705E6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON CATHODE, 2 ELEMENTS

.75 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

SCHOTTKY

GULL WING

DUAL

BAT1706WH6327XTSA1 by Infineon Technologies

BAT1706WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

.75 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

SCHOTTKY

GULL WING

DUAL

BAT6202LE6327XTMA1 by Infineon Technologies

BAT6202LE6327XTMA1

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Repetitive Peak Reverse Voltage: 40 V; Diode Element Material: SILICON; No. of Elements: 1; Maximum Output Current: .02 A;

SINGLE

SILICON

MIXER DIODE

1 V

1

150 Cel

.02 A

NOT SPECIFIED

40 V

Rectifier Diodes

YES

SCHOTTKY

NOT SPECIFIED

BAT6207WH6327XTSA1 by Infineon Technologies

BAT6207WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

TR, 7 INCH : 3000

SEPARATE, 2 ELEMENTS

.6 pF

SILICON

MIXER DIODE

1 V

R-PDSO-G4

2

4

150 Cel

.02 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.1 W

10 uA

40 V

YES

SCHOTTKY

GULL WING

DUAL

LOW BARRIER

BAT6806E6327HTSA1 by Infineon Technologies

BAT6806E6327HTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

SCHOTTKY

GULL WING

DUAL

BAT6806WH6327XTSA1 by Infineon Technologies

BAT6806WH6327XTSA1

Infineon Technologies

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

COMMON ANODE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.15 W

YES

SCHOTTKY

GULL WING

DUAL

TMM6263FILM by STMicroelectronics

TMM6263FILM

STMicroelectronics

TMM6263FILM by STMicroelectronics is a single microwave mixer diode with a Schottky technology. It operates in the very high frequency to ultra high frequency band, featuring a max forward voltage of 1V and max output current of 15A. This glass-packaged diode is ideal for applications requiring high-frequency signal mixing and detection.

MATCHED BATCH AVAILABLE

60 V

ISOLATED

SINGLE

2.2 pF

SILICON

MIXER DIODE

1 V

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

O-LELF-R2

e3

1

1

2

200 Cel

-65 Cel

15 A

GLASS

ROUND

LONG FORM

235

Not Qualified

60 V

.2 uA

Rectifier Diodes

YES

SCHOTTKY

Matte Tin (Sn) - annealed

WRAP AROUND

END

30

BAR28 by STMicroelectronics

BAR28

STMicroelectronics

BAR28 by STMicroelectronics is a Schottky mixer diode designed for very high to ultra-high frequency applications. It features a max operating temp of 200 °C, 2 pF capacitance, and operates within -65°C to 200°C. Ideal for microwave mixing and detection tasks.

MATCHED BATCH AVAILABLE

ISOLATED

SINGLE

2 pF

SILICON

MIXER DIODE

1 V

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

DO-35

O-LALF-W2

e3

.05 A

1

2

200 Cel

-65 Cel

.015 A

GLASS

ROUND

LONG FORM

260

Not Qualified

70 V

Rectifier Diodes

NO

SCHOTTKY

MATTE TIN

WIRE

AXIAL

DMF3945-000 by Skyworks Solutions

DMF3945-000

Skyworks Solutions

The Skyworks Solutions DMF3945-000 is a complex Schottky mixer diode with 8 elements, operating up to 6 GHz in S band. Featuring a max diode capacitance of 0.5 pF, it is surface mountable and operates at temperatures up to 150°C. Ideal for microwave applications requiring high-frequency mixing and detection capabilities.

HIGH RELIABILITY

COMPLEX

.5 pF

SILICON

MIXER DIODE

S BAND

R-XUUC-N6

8

6

6 GHz

150 Cel

UNSPECIFIED

RECTANGULAR

UNCASED CHIP

NOT SPECIFIED

Not Qualified

Microwave Mixer Diodes

YES

SCHOTTKY

NO LEAD

UPPER

NOT SPECIFIED

LOW BARRIER

SMS7621-060 by Skyworks Solutions

SMS7621-060

Skyworks Solutions

Skyworks Solutions SMS7621-060 is a single-config microwave mixer diode with Schottky technology. Operating in K band, it has low barrier Schottky element made of silicon. With 0.18 pF capacitance and 0.075 W power dissipation, it's ideal for surface mount applications requiring high frequency mixing capabilities.

SINGLE

.18 pF

SILICON

MIXER DIODE

K BAND

R-XBCC-N2

1

1

2

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

.075 W

Not Qualified

YES

SCHOTTKY

NO LEAD

BOTTOM

30

LOW BARRIER

SMS7630-061 by Skyworks Solutions

SMS7630-061

Skyworks Solutions

SMS7630-061 by Skyworks Solutions is a single-config microwave mixer diode with Schottky technology. Operating in the K band frequency, it has a max power dissipation of 0.075W and can withstand peak reflow temperature of 260°C. Ideal for applications requiring high-frequency mixing and detection in compact chip carrier packages.

SINGLE

SILICON

MIXER DIODE

K BAND

R-PBCC-N2

1

1

2

PLASTIC/EPOXY

RECTANGULAR

CHIP CARRIER

260

.075 W

Not Qualified

YES

SCHOTTKY

NO LEAD

BOTTOM

40

ZERO BARRIER

HSMS-282Z-BLKG by Broadcom

HSMS-282Z-BLKG

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

.34 V

R-PDSO-G2

e3

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

20

HSMS-282Z-TR1G by Broadcom

HSMS-282Z-TR1G

Broadcom

MIXER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

SILICON

MIXER DIODE

.34 V

R-PDSO-G2

e3

1

1

2

150 Cel

1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

Rectifier Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

20

STDD15-05WFILM by STMicroelectronics

STDD15-05WFILM

STMicroelectronics

STDD15-05WFILM by STMicroelectronics is a dual-element mixer diode designed for microwave applications. It features a max capacitance of 1 pF, operates up to 150 °C, and comes in a compact surface mount package. Ideal for high-frequency signal processing tasks.

COMMON CATHODE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

R-PDSO-G3

2

3

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

Not Qualified

YES

GULL WING

DUAL

HMPS-2820-BLK by Broadcom

HMPS-2820-BLK

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-CBCC-N4

e3

1

1

4

150 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

15 V

Rectifier Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2820-TR1 by Broadcom

HMPS-2820-TR1

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-CBCC-N4

e3

1

1

4

150 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

15 V

Rectifier Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2820-TR2 by Broadcom

HMPS-2820-TR2

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-CBCC-N4

e3

1

1

4

150 Cel

CERAMIC, METAL-SEALED COFIRED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

15 V

Rectifier Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2822-BLK by Broadcom

HMPS-2822-BLK

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2822-TR1 by Broadcom

HMPS-2822-TR1

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2822-TR2 by Broadcom

HMPS-2822-TR2

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2825-BLK by Broadcom

HMPS-2825-BLK

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2825-TR1 by Broadcom

HMPS-2825-TR1

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

HMPS-2825-TR2 by Broadcom

HMPS-2825-TR2

Broadcom

MIXER DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 4; Surface Mount: YES; Package Shape: RECTANGULAR;

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.34 V

C BAND

R-XBCC-N4

e3

1

2

4

150 Cel

-65 Cel

UNSPECIFIED

RECTANGULAR

CHIP CARRIER

260

Not Qualified

.1 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin (Sn)

NO LEAD

BOTTOM

20

BA277,115 by NXP Semiconductors

BA277,115

NXP Semiconductors

MIXER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

SINGLE

1.2 pF

SILICON

MIXER DIODE

1 V

VERY HIGH FREQUENCY

R-PDSO-F2

e3

1

2

150 Cel

-65 Cel

.1 A

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

.715 W

Not Qualified

35 V

Rectifier Diodes

YES

TIN

FLAT

DUAL

BA591,115 by NXP Semiconductors

BA591,115

NXP Semiconductors

BA591,115 by NXP Semiconductors is a single microwave mixer diode with very high frequency band. It has a max power dissipation of 0.5W and operates b/w -65°C to 150°C. This small outline diode is ideal for applications requiring high-frequency signal mixing in electronic circuits.

SINGLE

1.05 pF

.8 pF

SILICON

MIXER DIODE

VERY HIGH FREQUENCY

R-PDSO-G2

e3

1

1

2

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.5 W

Not Qualified

35 V

Varactors

YES

TIN

GULL WING

DUAL

30

BAT15-07LRHE6327 by Infineon Technologies

BAT15-07LRHE6327

Infineon Technologies

MIXER DIODE; Surface Mount: YES; Maximum Operating Temperature: 150 Cel; Technology: SCHOTTKY; Schottky Barrier Type: LOW BARRIER; Maximum Output Current: .11 A;

4 V

.35 pF

SILICON

MIXER DIODE

.41 V

X BAND

150 Cel

-55 Cel

.11 A

.1 W

Other Diodes

YES

SCHOTTKY

LOW BARRIER

NSR15DW1T1 by Onsemi

NSR15DW1T1

Onsemi

NSR15DW1T1 by Onsemi is a Schottky mixer diode with 2 elements, max reverse voltage of 15V, and VF of 0.415V. It operates b/w -65 to 150 °C and has a package style of small outline for microwave applications. The diode has low capacitance at 1pF and low reverse current at 0.05uA, making it suitable for high-frequency signal detection in various electronic devices.

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.415 V

R-PDSO-G6

e0

1

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

Not Qualified

15 V

.05 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

NSR15SDW1T1 by Onsemi

NSR15SDW1T1

Onsemi

NSR15SDW1T1 by Onsemi is a Schottky mixer diode with 2 elements, max reverse voltage of 15V, and forward voltage of 0.415V. It operates b/w -65 to 150 °C, has a package style of small outline, and is suitable for microwave applications requiring low diode capacitance.

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.415 V

R-PDSO-G6

e0

1

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

235

Not Qualified

15 V

.05 uA

1 V

Other Diodes

YES

SCHOTTKY

Tin/Lead (Sn/Pb)

GULL WING

DUAL

30

NSR15DW1T1G by Onsemi

NSR15DW1T1G

Onsemi

NSR15DW1T1G by Onsemi is a Schottky mixer diode with 2 elements, max. reverse voltage of 15V, and VF of 0.415V. It operates b/w -65 to 150 °C and has a package style of small outline for microwave applications.

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.415 V

R-PDSO-G6

e3

1

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

.05 uA

1 V

Other Diodes

YES

SCHOTTKY

TIN

GULL WING

DUAL

30

NSR15SDW1T1G by Onsemi

NSR15SDW1T1G

Onsemi

NSR15SDW1T1G by Onsemi is a Schottky mixer diode with 2 elements, max reverse voltage of 15V, and forward voltage of 0.415V. It operates b/w -65 to 150 °C and has a small outline package style for surface mount applications in microwave circuits.

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.415 V

R-PDSO-G6

e3

1

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

.05 uA

1 V

Other Diodes

YES

SCHOTTKY

TIN

GULL WING

DUAL

30

SMS3922-015LF by Skyworks Solutions

SMS3922-015LF

Skyworks Solutions

SMS3922-015LF by Skyworks Solutions is a microwave mixer & detector diode with 2 elements. It has a max diode capacitance of 1.03 pF and operates at temperatures up to 150°C. Ideal for applications requiring small outline, surface mount diodes in high-frequency circuits.

SEPARATE, 2 ELEMENTS

1.03 pF

SILICON

MIXER DIODE

R-PDSO-G4

e3

1

2

4

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

.125 W

Not Qualified

Microwave Mixer Diodes

YES

SCHOTTKY

Matte Tin (Sn)

GULL WING

DUAL

40

DMJ4103-000 by Skyworks Solutions

DMJ4103-000

Skyworks Solutions

MIXER DIODE; Peak Reflow Temperature (C): NOT SPECIFIED; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;

MIXER DIODE

NOT SPECIFIED

NOT SPECIFIED

MBD301G by Onsemi

MBD301G

Onsemi

MBD301G by Onsemi is a single Schottky mixer diode with ultra high frequency band. It has a max diode capacitance of 1.5 pF and can operate in temperatures ranging from -55 to 125 °C. This cylindrical package diode is ideal for microwave applications requiring high frequency mixing and detection capabilities.

SINGLE

1.5 pF

SILICON

MIXER DIODE

ULTRA HIGH FREQUENCY

TO-226AC

O-PBCY-T2

e1

1

2

125 Cel

-55 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

Other Diodes

NO

SCHOTTKY

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

MBD701G by Onsemi

MBD701G

Onsemi

MBD701G by Onsemi is a single Schottky mixer diode with ultra high frequency range. It has a max diode capacitance of 1 pF and can operate at temperatures up to 125 °C. This cylindrical package diode is ideal for microwave applications requiring high power dissipation.

SINGLE

1 pF

SILICON

MIXER DIODE

ULTRA HIGH FREQUENCY

TO-92

O-PBCY-T2

e1

1

2

125 Cel

PLASTIC/EPOXY

ROUND

CYLINDRICAL

260

.28 W

Not Qualified

Other Diodes

NO

SCHOTTKY

TIN SILVER COPPER

THROUGH-HOLE

BOTTOM

NSR15SDW1T2G by Onsemi

NSR15SDW1T2G

Onsemi

NSR15SDW1T2G by Onsemi is a Schottky mixer diode with 2 elements, featuring a max reverse voltage of 15V and forward voltage of 0.415V. It operates b/w -65 °C to 150°C, suitable for microwave applications requiring low diode capacitance (1pF) and low reverse current (0.05uA).

SEPARATE, 2 ELEMENTS

1 pF

SILICON

MIXER DIODE

.415 V

R-PDSO-G6

e3

1

2

6

150 Cel

-65 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

15 V

.05 uA

1 V

Other Diodes

YES

SCHOTTKY

TIN

GULL WING

DUAL

30

HSMS-285B-BLKG by Broadcom

HSMS-285B-BLKG

Broadcom

HSMS-285B-BLKG by Broadcom is a Schottky mixer diode with a frequency range of 0.915 GHz to 4 GHz, ideal for L Band applications. It features a plastic/epoxy package, matte tin terminal finish, and operates at temperatures up to 150°C. Suitable for surface mount designs in microwave systems.

SINGLE

SILICON

MIXER DIODE

L BAND

R-PDSO-G3

e3

1

1

3

4 GHz

.915 GHz

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

Other Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

20

ZERO BARRIER

HSMS-285C-BLKG by Broadcom

HSMS-285C-BLKG

Broadcom

HSMS-285C-BLKG by Broadcom is a Schottky mixer diode with 2 elements, operating from 0.915 GHz to 4 GHz in L Band. It features a plastic/epoxy package, series connected configuration, and matte tin finish. Ideal for microwave applications requiring high-frequency mixing and detection capabilities.

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

SILICON

MIXER DIODE

L BAND

R-PDSO-G3

e3

1

2

3

4 GHz

.915 GHz

150 Cel

PLASTIC/EPOXY

RECTANGULAR

SMALL OUTLINE

260

Not Qualified

Other Diodes

YES

SCHOTTKY

MATTE TIN

GULL WING

DUAL

20

ZERO BARRIER