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BA591,135

NXP Semiconductors

BA591,135 by NXP Semiconductors

BA591,135 by NXP Semiconductors is a surface-mount variable capacitance diode ideal for microwave applications. It features a nominal diode capacitance of 0.8 pF and can withstand a peak reverse voltage of 35 V. With a peak reflow temp of 260 °C, it's perfect for compact designs.

Median Price

$0.072

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Verical

USA . 20,000 parts In-Stock

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-

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$0.080

20,000

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$0.080

Rochester

USA . 5,000 parts In-Stock

1+ parts

-

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$0.064

1k+ parts

$0.053

10k+ parts

$0.048

5,000

-

$0.064

$0.053

$0.048

Distributors (In-Stock)

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Digiode

USA . 1,826 parts In-Stock

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$0.050

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1,826

$0.050

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Vyrian

USA . 4,937 parts In-Stock

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4,937

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Anansix

USA . 2,053 parts In-Stock

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2,053

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Distributors (Availability)

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Corphita

USA . 2,581 parts In-Stock

1+ parts

$0.048

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2,581

$0.048

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AZTECH Wire

Italy . 890 parts In-Stock

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$18.550

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890

$18.550

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UNI Independent Distributors

Spain . 5,753 parts In-Stock

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5,753

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Northwest PG Solutions

USA . 801 parts In-Stock

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801

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Microchip USA

USA . 498 parts In-Stock

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498

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Native Components

USA . 268 parts In-Stock

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Overview

Unlock unparalleled performance with the BA591,135 by NXP Semiconductors—a top-tier variable capacitance diode designed for excellence in microwave mixing and detection. Renowned for its reliability and precision, NXP delivers superior quality that empowers your innovations. Whether you're enhancing wireless communication or optimizing signal processing, this cutting-edge diode offers unmatched efficiency, ensuring your projects stand out while reducing costs and boosting overall performance. Elevate your applications today!

Feature Benefit Bullets

Surface Mount: YES

The surface mount design allows for easy integration into compact electronic systems, improving space efficiency and soldering capabilities.

Terminal Finish: TIN

The tin finish provides excellent solderability and is resistant to corrosion, ensuring better long-term performance and reliability.

Nominal Diode Capacitance: 0.8 pF

A low capacitance value of 0.8 pF ensures fast switching speed, making it ideal for high-frequency applications and reducing signal distortion.

Maximum Time At Peak Reflow Temperature: 30 s

A maximum reflow time of 30 seconds allows for effective soldering without compromising the diode's integrity, leading to improved manufacturing yields.

Peak Reflow Temperature: 260 °C

The high reflow temperature ensures compatibility with lead-free soldering processes, enhancing eco-friendliness and meeting industry standards.

Diode Type: VARIABLE CAPACITANCE DIODE

As a variable capacitance diode, it provides tunable capacitance for applications such as voltage-controlled oscillators and RF tuning circuits, offering versatility in circuit design.

Maximum Repetitive Peak Reverse Voltage: 35 V

With a maximum reverse voltage of 35 V, this diode can handle significant reverse bias conditions, ensuring reliable operation in demanding environments.

Technical Specifications

Microwave Mixer & Detector Diodes BA591,135 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from NXP Semiconductors

Specs

Nominal Diode Capacitance:

.8 pF

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

Peak Reflow Temperature (C):

260

Maximum Repetitive Peak Reverse Voltage:

35 V

Sub-Category:

Varactors

Surface Mount:

YES

Terminal Finish:

TIN

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BA591,135 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.60

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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