Loading...

SBL-121

Onsemi

SBL-121 by Onsemi

SBL-121 by Onsemi is a surface mount mixer diode with GaAs element. It operates from 3.9 GHz to 12 GHz, with max temp of 150 °C. Ideal for microwave applications like radar and communication systems due to its high frequency range and temperature tolerance.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,611 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,611

-

-

-

-

Digiode

USA . 1,240 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,240

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

TANS Electronics

Latvia . 3,778 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,778

-

-

-

-

Kulean Microsystems

USA . 3,635 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,635

-

-

-

-

Problanco Electronics

Mexico . 3,216 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,216

-

-

-

-

Corphita

USA . 2,229 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

2,229

-

-

-

-

UHIMA Technologies

Türkiye . 801 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

801

-

-

-

-

Corohmni

South Africa . 292 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

292

-

-

-

-

SupplyDigital Components

Austria . 290 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

290

-

-

-

-

Overview

Enhance your electronic projects with the high-quality SBL-121 mixer diode by Onsemi. Designed for microwave applications, this surface mount diode boasts a wide operating frequency range from 3.9 GHz to 12 GHz, making it versatile for various projects. Onsemi's reputation for excellence in manufacturing ensures that this diode delivers reliable performance and consistent results. Upgrade your designs with the SBL-121 and experience the value, benefits, and advantages it brings to your projects.

Feature Benefit Bullets

Surface Mount: YES

Being surface mountable makes this product easy to install and minimizes the need for additional components, reducing overall system complexity.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature of 150 °C, this product can handle demanding operating conditions without sacrificing performance.

Diode Type: MIXER DIODE

The use of mixer diodes provides versatility in signal processing and allows for efficient mixing of signals in microwave applications.

Minimum Operating Frequency: 3.9 GHz

The low minimum operating frequency of 3.9 GHz enables this product to be suitable for a wide range of microwave applications, including communication and radar systems.

Diode Element Material: GALLIUM ARSENIDE

Gallium arsenide diodes offer high efficiency and fast response times, making them ideal for high-frequency applications where performance is key.

Maximum Operating Frequency: 12 GHz

With a maximum operating frequency of 12 GHz, this product can handle high-frequency signals with precision and accuracy, making it a reliable choice for demanding microwave applications.

Technical Specifications

Microwave Mixer & Detector Diodes SBL-121 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Diode Element Material:

GALLIUM ARSENIDE

Diode Type:

Maximum Operating Frequency:

12 GHz

Minimum Operating Frequency:

3.9 GHz

Maximum Operating Temperature:

150 Cel

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

YES

Trade Compliance

SBL-121 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 3