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MBD101

Onsemi

MBD101 by Onsemi

The Onsemi MBD101 is a single microwave mixer diode with Schottky technology. It operates in the ultra high frequency band, with a max diode capacitance of 1 pF. This cylindrical package has a max power dissipation of 0.28 W and is ideal for applications requiring high frequency mixing and detection.

Median Price

$0.134

Lifecycle Status

Suppliers In-Stock

22

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 3,000 parts In-Stock

1+ parts

-

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$0.119

1k+ parts

$0.099

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$0.088

3,000

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$0.119

$0.099

$0.088

DigiKey

USA . 3,000 parts In-Stock

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$0.150

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$0.150

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Digiode

USA . 1,115 parts In-Stock

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$0.093

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Vyrian

USA . 1,535 parts In-Stock

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$0.098

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1,535

$0.098

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Component Electronics Inc.

Canada . 50 parts In-Stock

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$0.380

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$0.290

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$0.250

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50

$0.380

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Atlantic Semiconductor

USA . 1,119 parts In-Stock

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Resion

USA . 928 parts In-Stock

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Sinequanon

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Prism Electronics

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PAR Electronics

UK . 303 parts In-Stock

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Diverse Electronics

Canada . 250 parts In-Stock

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DF Sales Co.

USA . 51 parts In-Stock

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DF Sales Co.

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A2Z Electronics, Inc.

USA . 32 parts In-Stock

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Bristol Electronics

USA . 32 parts In-Stock

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Standard Data Resources

USA . 13 parts In-Stock

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Odintec Ltd.

Israel . 12 parts In-Stock

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First Choice Components Inc.

USA . 12 parts In-Stock

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EMSNET

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LittleDiode

UK . 11 parts In-Stock

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MISTER SPROCKETS

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ECAB

Sweden . 3 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 2,716 parts In-Stock

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$0.083

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Corphita

USA . 829 parts In-Stock

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$0.088

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829

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Corohmni

South Africa . 282 parts In-Stock

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$0.098

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QUARKTWIN TECHNOLOGY LTD

USA . 26,055 parts In-Stock

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Authorized Procurement Solutions

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TANS Electronics

Latvia . 7,937 parts In-Stock

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Problanco Electronics

Mexico . 6,756 parts In-Stock

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SupplyDigital Components

Austria . 2,944 parts In-Stock

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Kulean Microsystems

USA . 1,508 parts In-Stock

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SIE Connect GmbH (Excess)

Germany . 805 parts In-Stock

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UHIMA Technologies

Türkiye . 591 parts In-Stock

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Perfect Parts

USA . 363 parts In-Stock

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363

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Overview

Discover the MBD101 by Onsemi, a high-quality microwave mixer and detector diode that offers unmatched performance and reliability. Manufactured by Onsemi, a trusted name in the industry, this diode is perfect for ultra-high frequency applications. With its single configuration and low diode capacitance, this product provides exceptional value and benefits to customers. Whether you're working on radar systems, satellite communication, or other RF applications, the MBD101 is sure to meet your needs with its top-notch technology and superior design. Elevate your projects with the MBD101 and experience the difference today.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material makes the product lightweight and durable, ideal for portable or rugged applications.

Config: SINGLE

Single configuration simplifies the design and integration process, making it easier to use in various electronic systems.

Frequency Band: ULTRA HIGH FREQUENCY

Operates in the ultra-high frequency band, allowing for high-speed data transmission and precise signal processing.

Maximum Diode Capacitance: 1 pF

Low diode capacitance ensures minimal signal loss and distortion, making it suitable for high-frequency applications.

Package Shape: ROUND

Round package shape allows for easy mounting and integration into electronic systems, saving space and improving overall design aesthetics.

No. of Terminals: 2

Two terminals provide a simple and easy connection interface, reducing installation complexity.

Package Style (Meter): CYLINDRICAL

Cylindrical package style ensures efficient heat dissipation, maintaining stable performance under high operating temperatures.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures up to 150 °C, suitable for demanding industrial and aerospace environments.

Terminal Finish: TIN LEAD

Tin-lead terminal finish offers good solderability and conductivity, ensuring reliable electrical connections.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and allows for easy access during assembly and maintenance.

Maximum Power Dissipation: 0.28 W

Can dissipate up to 0.28 watts of power, maintaining stable operation under heavy load conditions.

Peak Reflow Temperature °C: 235

Can withstand peak reflow temperatures up to 235 °C, ensuring proper soldering and assembly processes.

Diode Type: MIXER DIODE

Mixer diode type is ideal for signal mixing and frequency conversion applications, offering high performance and efficiency.

Technology: SCHOTTKY

Schottky technology provides low forward voltage drop and fast switching speeds, improving overall system efficiency and performance.

Terminal Form: THROUGH-HOLE

Through-hole terminal form allows for easy and secure PCB mounting, ensuring robust mechanical connections.

Diode Element Material: SILICON

Silicon diode element material offers high reliability and stability, suitable for long-term and critical applications.

Technical Specifications

Microwave Mixer & Detector Diodes MBD101 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

235

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Sub-Category:

Microwave Mixer Diodes

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MBD101 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

NSN

5961-00-628-7895, 5961006287895

NIIN

006287895

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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