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MBD201

Onsemi

MBD201 by Onsemi

The Onsemi MBD201 is a single mixer diode with Schottky technology, ideal for ultra high frequency applications. Featuring a max diode capacitance of 1.5 pF, it comes in a round cylindrical package made of plastic/epoxy material. With two terminals and through-hole terminal form, this diode is suitable for microwave mixing and detection tasks.

Median Price

$12.490

Lifecycle Status

Suppliers In-Stock

12

In-Stock Inventory

1k+

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American Microsemiconductor Inc.

USA . 400 parts In-Stock

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Vyrian

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Digiode

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Resion

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Electronic Expediters

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R&J Components

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North Shore Components

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EMSNET

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Mil-Aero Solutions, Inc.

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Prism Electronics

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J2 Sourcing AB

Sweden . 10 parts In-Stock

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Corohmni

South Africa . 236 parts In-Stock

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Kulean Microsystems

USA . 5,389 parts In-Stock

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SupplyDigital Components

Austria . 4,623 parts In-Stock

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TANS Electronics

Latvia . 3,344 parts In-Stock

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Problanco Electronics

Mexico . 2,807 parts In-Stock

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Overview

Elevate your RF system performance with the MBD201 by Onsemi. Crafted with precision and expertise, this microwave mixer & detector diode offers unparalleled quality and reliability. Ideal for ultra-high frequency applications, this single-configured diode boasts a low diode capacitance of 1.5pF, ensuring optimal signal integrity. With a round package shape and through-hole terminal form, the MBD201 is easy to integrate into any design. Experience seamless operation and enhanced efficiency with the innovative Schottky technology of this diode. Trust Onsemi to deliver cutting-edge solutions that exceed expectations.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides good insulation and protection for the diode, ensuring reliable performance and longevity.

Configuration: SINGLE

Single configuration simplifies the setup and usage of the diode, making it easier to integrate into various systems.

Frequency Band: ULTRA HIGH FREQUENCY

Ultra high frequency capability allows for high-speed processing and accurate detection, making it suitable for advanced microwave applications.

Maximum Diode Capacitance: 1.5 pF

Low diode capacitance minimizes signal loss and distortion, ensuring high efficiency in signal processing.

Package Shape: ROUND

Round shape provides uniform distribution of stress and heat, leading to better stability and reliability.

No. of Terminals: 2

Having 2 terminals simplifies the connection process and reduces the chances of errors during installation.

Package Style (Meter): CYLINDRICAL

Cylindrical package style facilitates easy mounting and handling, making it convenient for various applications.

Terminal Position: BOTTOM

Bottom terminal position allows for easy PCB mounting and ensures a secure connection for stable operation.

Diode Type: MIXER DIODE

Mixer diode type enables signal mixing and detection, making it suitable for RF and microwave signal processing applications.

Technology: SCHOTTKY

Schottky technology offers fast switching speeds and low forward voltage drop, enhancing the overall performance of the diode.

Terminal Form: THROUGH-HOLE

Through-hole terminal form provides strong mechanical support and allows for easy through-board mounting, ensuring reliability in harsh environments.

Diode Element Material: SILICON

Silicon diode element material offers good conductivity and temperature stability, ensuring reliable performance over a wide range of operating conditions.

Technical Specifications

Microwave Mixer & Detector Diodes MBD201 attributes and parameters. Explore more Microwave Mixer & Detector Diodes devices from Onsemi

Specs

Config:

SINGLE

Maximum Diode Capacitance:

1.5 pF

Diode Element Material:

SILICON

Diode Type:

Frequency Band:

ULTRA HIGH FREQUENCY

JEDEC-95 Code:

TO-226AC

JESD-30 Code:

O-PBCY-T2

No. of Elements:

1

No. of Terminals:

2

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Surface Mount:

NO

Technology:

SCHOTTKY

Terminal Form:

Terminal Position:

Trade Compliance

MBD201 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.60

SB

8541.10.00.60

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

Category top products 20

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