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RF Power Bipolar Junction Transistors (BJT)

RF Power Bipolar Junction Transistors (BJT) are electronic devices used in high-frequency RF (radio frequency) applications to amplify and control high-power signals. They are commonly used in applications such as broadcasting, radar, and satellite communications.

RF Power BJTs are designed to handle high-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a low on-resistance and high gain, making them suitable for high-power amplification.

The RF Power BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Power BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few watts to several kilowatts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

Proper selection and use of RF Power BJTs are critical to ensure optimal performance, reliability, and compatibility with other components in the circuit. RF Power BJTs are often used in conjunction with other components, such as filters and matching networks, to form complete RF power amplification circuits.

RF Power Bipolar Junction Transistors (BJT)

Available Parts 817

Part RoHS Manufacturer Description Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Minimum Operating Temperature Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard
2010 by Microsemi

2010

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2 A; No. of Terminals: 2; Package Shape: RECTANGULAR;

NPN

SINGLE

YES

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

2N3866 by Microchip Technology

2N3866

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .4 A; Maximum Collector-Emitter Voltage: 30 V;

NPN

SINGLE

NO

800 MHz

.4 A

METAL

AMPLIFIER

1 V

10 dB

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

10

3.5 pF

SILICON

30 V

BOTTOM

O-MBCY-W3

TO-39

2N3866A by Microchip Technology

2N3866A

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 800 MHz; Maximum Collector Current (IC): .4 A; Minimum DC Current Gain (hFE): 25;

NPN

SINGLE

NO

800 MHz

.4 A

METAL

AMPLIFIER

1 V

10 dB

WIRE

ROUND

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

25

3.5 pF

SILICON

30 V

BOTTOM

O-MBCY-W3

TO-39

2005 by Microsemi

2005

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 1 A; Qualification: Not Qualified; Terminal Form: FLAT;

NPN

SINGLE

YES

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

BLW32 by NXP Semiconductors

BLW32

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 3500 MHz; Maximum Power Dissipation (Abs): 10.8 W; Maximum Collector Current (IC): .65 A;

NPN

SINGLE

NO

3500 MHz

10.8 W

.65 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10.8 W

20

200 Cel

SILICON

30 V

RADIAL

O-CRPM-F4

Not Qualified

HIGH RELIABILITY, DIFFUSED EMITTER BALLASTING RESISTORS

BLW77 by NXP Semiconductors

BLW77

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 320 MHz; Maximum Power Dissipation (Abs): 245 W; Maximum Collector Current (IC): 12 A;

NPN

SINGLE

NO

320 MHz

245 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

35 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

BDP950H6327XTSA1 by Infineon Technologies

BDP950H6327XTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; No. of Elements: 1;

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

60 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

C3-28 by Asi Semiconductor

C3-28

Asi Semiconductor

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): 10 W; Maximum Collector Current (IC): 1 A;

NPN

SINGLE

NO

600 MHz

10 W

1 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

200 Cel

7 pF

SILICON

RADIAL

O-CRPM-F4

Not Qualified

MS1076B by Microsemi

MS1076B

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 16 A; No. of Elements: 1; Terminal Position: RADIAL;

NPN

SINGLE

YES

16 A

PLASTIC/EPOXY

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

200 Cel

SILICON

35 V

RADIAL

O-PRFM-F4

Not Qualified

HIGH RELIABILTY, WITH EMITTER BALLASTING RESISTORS

2SC2879A by Toshiba

2SC2879A

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 25 A; Minimum DC Current Gain (hFE): 10;

NPN

SINGLE

YES

250 W

25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

175 Cel

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

SD1726 by STMicroelectronics

SD1726

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 233 W; Maximum Collector Current (IC): 20 A; Minimum DC Current Gain (hFE): 18;

NPN

SINGLE

NO

233 W

20 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

18

200 Cel

220 pF

SILICON

55 V

RADIAL

O-PRFM-F4

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

1090MP by Microsemi

1090MP

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 6.5 A; Transistor Element Material: SILICON;

NPN

SINGLE

YES

250 W

6.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

L BAND

4

DISK BUTTON

Other Transistors

15

200 Cel

16 pF

SILICON

TIN LEAD

RADIAL

O-CRDB-F4

Not Qualified

e0

1214-55 by Microsemi

1214-55

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 8 A; Package Shape: RECTANGULAR; Qualification: Not Qualified;

NPN

SINGLE

YES

8 A

CERAMIC, METAL-SEALED COFIRED

SWITCHING

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

1075MP by Microsemi

1075MP

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 6.5 A; Maximum Collector-Base Capacitance: 50 pF;

NPN

SINGLE

YES

250 W

6.5 A

UNSPECIFIED

AMPLIFIER

FLAT

ROUND

1

L BAND

4

DISK BUTTON

BIP RF Small Signal

20

200 Cel

50 pF

SILICON

65 V

TIN LEAD

RADIAL

O-XRDB-F4

Not Qualified

e0

3005 by Microchip Technology

3005

Microchip Technology

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 2.5 A; JESD-30 Code: R-CDFM-F2; Transistor Element Material: SILICON;

NPN

SINGLE

YES

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

1214-110M by Microsemi

1214-110M

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 270 W; Maximum Collector Current (IC): 8 A; Package Style (Meter): FLANGE MOUNT;

NPN

SINGLE

YES

270 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

BIP RF Small Signal

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

BASE

Not Qualified

e0

BDP954H6327XTSA1 by Infineon Technologies

BDP954H6327XTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Terminal Finish: TIN;

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

100 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

MS2209 by Microsemi

MS2209

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): 7 A; JESD-609 Code: e0; Terminal Form: FLAT;

NPN

SINGLE

YES

7 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

SQUARE

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

S-CDFM-F2

BASE

Not Qualified

e0

MSC1090M by Microsemi

MSC1090M

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1025 MHz; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 5.52 A;

NPN

SINGLE

YES

1025 MHz

220 W

5.52 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

ROUND

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

65 V

TIN LEAD

DUAL

O-PDFM-F2

BASE

Not Qualified

HIGH RELIABILITY, WITH EMITTER BALLASTING RESISTORS

e0

SD1897 by STMicroelectronics

SD1897

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 29 W; Maximum Collector Current (IC): 2.3 A; Transistor Element Material: SILICON;

NPN

SINGLE

YES

29 W

2.3 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

15 V

DUAL

R-PDFM-F2

BASE

Not Qualified

HIGH RELIABILITY

BDP948H6327XTSA1 by Infineon Technologies

BDP948H6327XTSA1

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Collector Current (IC): 3 A; Package Body Material: PLASTIC/EPOXY;

PNP

SINGLE

YES

100 MHz

3 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

4

SMALL OUTLINE

SILICON

45 V

TIN

DUAL

R-PDSO-G4

1

COLLECTOR

e3

BLT50,115 by NXP Semiconductors

BLT50,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .5 A; Terminal Form: GULL WING;

NPN

SINGLE

YES

2 W

.5 A

PLASTIC/EPOXY

AMPLIFIER

10 dB

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

Other Transistors

2 W

25

175 Cel

6 pF

SILICON

10 V

MATTE TIN

DUAL

R-PDSO-G4

1

COLLECTOR

Not Qualified

HIGH RELIABILITY

e3

260

2SC2879 by Toshiba

2SC2879

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 25 A;

NPN

SINGLE

YES

100 MHz

250 W

25 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

13 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

250 W

10

175 Cel

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

BLW96 by NXP Semiconductors

BLW96

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 245 MHz; Maximum Power Dissipation (Abs): 340 W; Maximum Collector Current (IC): 12 A;

NPN

SINGLE

NO

245 MHz

340 W

12 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15

200 Cel

SILICON

55 V

RADIAL

O-CRFM-F4

ISOLATED

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

TAN15 by Microsemi

TAN15

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Package Style (Meter): FLANGE MOUNT; JESD-30 Code: R-CDFM-F2; No. of Terminals: 2;

NPN

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

L BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

e0

2SC2290 by Toshiba

2SC2290

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 20 A;

NPN

SINGLE

NO

100 MHz

175 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11.8 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

175 W

10

175 Cel

500 pF

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2652 by Toshiba

2SC2652

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 100 MHz; Maximum Power Dissipation (Abs): 300 W; Maximum Collector Current (IC): 20 A;

NPN

SINGLE

NO

100 MHz

300 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

13 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

300 W

10

175 Cel

SILICON

55 V

RADIAL

O-CRFM-F4

Not Qualified

MRF648 by Motorola

MRF648

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 11 A; Maximum Collector-Base Capacitance: 150 pF;

NPN

SINGLE

YES

175 W

11 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.4 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

175 W

20

150 Cel

150 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F4

Not Qualified

2N5641 by STMicroelectronics

2N5641

STMicroelectronics

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1 A;

NPN

SINGLE

NO

300 MHz

15 W

1 A

UNSPECIFIED

AMPLIFIER

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

5

200 Cel

15 pF

SILICON

35 V

RADIAL

O-XRPM-F4

2SC2510 by Toshiba

2SC2510

Toshiba

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A; Maximum Power Dissipation Ambient: 250 W;

NPN

SINGLE

NO

250 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

12.2 dB

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

250 W

10

175 Cel

600 pF

SILICON

35 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2510A by Toshiba

2SC2510A

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A; Qualification: Not Qualified;

NPN

SINGLE

YES

250 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

175 Cel

600 pF

SILICON

35 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2782 by Toshiba

2SC2782

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 220 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 175 Cel;

NPN

SINGLE

YES

220 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.4 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

6

FLANGE MOUNT

Other Transistors

220 W

10

175 Cel

320 pF

SILICON

16 V

UNSPECIFIED

O-CXFM-F6

Not Qualified

2N3632 by Texas Instruments

2N3632

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 23 W; Maximum Collector Current (IC): 3 A;

NPN

SINGLE

NO

175 MHz

23 W

3 A

CERAMIC, METAL-SEALED COFIRED

PIN/PEG

ROUND

1

VERY HIGH FREQUENCY BAND

3

POST/STUD MOUNT

Other Transistors

5

200 Cel

25 pF

SILICON

40 V

UPPER

O-CUPM-P3

Not Qualified

TO-60

MRF658 by Motorola

MRF658

Motorola

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 15 A; Transistor Application: AMPLIFIER;

NPN

SINGLE

YES

175 W

15 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.15 dB

FLAT

ROUND

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

175 W

40

150 Cel

220 pF

SILICON

16.5 V

UNSPECIFIED

O-CXFM-F4

Not Qualified

2SC2290A by Toshiba

2SC2290A

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 175 W; Maximum Collector Current (IC): 20 A; Maximum Operating Temperature: 175 Cel;

NPN

SINGLE

YES

175 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

ROUND

1

HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

175 Cel

500 pF

SILICON

18 V

RADIAL

O-CRFM-F4

Not Qualified

2SC2641 by Toshiba

2SC2641

Toshiba

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 15 W; Maximum Collector Current (IC): 1.4 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

NPN

SINGLE

YES

15 W

1.4 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

7.7 dB

FLAT

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

15 W

10

175 Cel

25 pF

SILICON

17 V

DUAL

R-CDFM-F4

Not Qualified

MRF221 by Motorola

MRF221

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 175 MHz; Maximum Power Dissipation (Abs): 31 W; Maximum Collector Current (IC): 2.5 A;

NPN

SINGLE

NO

175 MHz

31 W

2.5 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

6.3 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

5

175 Cel

85 pF

SILICON

18 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

MRF224 by Motorola

MRF224

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 80 W; Maximum Collector Current (IC): 7 A; Transistor Element Material: SILICON;

NPN

SINGLE

NO

80 W

7 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

4.5 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

80 W

5

175 Cel

200 pF

SILICON

18 V

TIN LEAD

RADIAL

O-CRFM-F4

Not Qualified

e0

MRF232 by Motorola

MRF232

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 20 W; Maximum Collector Current (IC): 2 A; Minimum DC Current Gain (hFE): 10;

NPN

SINGLE

NO

20 W

2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

150 Cel

55 pF

SILICON

18 V

RADIAL

O-CRPM-F4

Not Qualified

MRF240A by Motorola

MRF240A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 100 W; Maximum Collector Current (IC): 8 A; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

NPN

SINGLE

NO

100 W

8 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

9 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

FLANGE MOUNT

Other Transistors

10

150 Cel

125 pF

SILICON

16 V

RADIAL

O-CRFM-F4

Not Qualified

MRF392 by Onsemi

MRF392

Onsemi

NPN; Configuration: COMMON EMITTER, 2 ELEMENTS; Surface Mount: YES; Maximum Collector Current (IC): 16 A; Package Shape: RECTANGULAR; Terminal Form: FLAT;

NPN

COMMON EMITTER, 2 ELEMENTS

YES

16 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

2

ULTRA HIGH FREQUENCY BAND

8

FLANGE MOUNT

200 Cel

95 pF

SILICON

30 V

DUAL

R-CDFM-F8

Not Qualified

HIGH RELIABILITY

MRF492A by Motorola

MRF492A

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 50 MHz; Maximum Power Dissipation (Abs): 250 W; Maximum Collector Current (IC): 20 A;

NPN

SINGLE

NO

50 MHz

250 W

20 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

11 dB

FLAT

ROUND

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

150 Cel

450 pF

SILICON

18 V

TIN LEAD

RADIAL

O-CRPM-F4

Not Qualified

e0

MRF660 by Motorola

MRF660

Motorola

NPN; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 25 W; Maximum Collector Current (IC): 2.4 A; Minimum Power Gain (Gp): 5.4 dB;

NPN

SINGLE

NO

25 W

2.4 A

PLASTIC/EPOXY

AMPLIFIER

5.4 dB

THROUGH-HOLE

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

FLANGE MOUNT

Other Transistors

20

150 Cel

25 pF

SILICON

16 V

TIN LEAD

SINGLE

R-PSFM-T3

EMITTER

Not Qualified

TO-220AB

e0

2SC5551AE-TD-E by Onsemi

2SC5551AE-TD-E

Onsemi

RF Power Bipolar Transistors; JESD-609 Code: e6; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN BISMUTH; Maximum Time At Peak Reflow Temperature (s): 30; Peak Reflow Temperature (C): 260;

Other Transistors

TIN BISMUTH

1

e6

30

260

2SC5551AF-TD-E by Onsemi

2SC5551AF-TD-E

Onsemi

RF Power Bipolar Transistors; Moisture Sensitivity Level (MSL): 1; Peak Reflow Temperature (C): 260; JESD-609 Code: e6; Maximum Time At Peak Reflow Temperature (s): 30; Terminal Finish: TIN BISMUTH;

Other Transistors

TIN BISMUTH

1

e6

30

260

MRF448A by M/a-com Technology Solutions

MRF448A

M/a-com Technology Solutions

RF Power Bipolar Transistors;

2N4128 by Texas Instruments

2N4128

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): 40 W; Maximum Collector Current (IC): 5 A;

NPN

SINGLE

NO

400 MHz

40 W

5 A

UNSPECIFIED

FLAT

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

4

POST/STUD MOUNT

Other Transistors

10

175 Cel

18 pF

SILICON

40 V

RADIAL

R-XRPM-F4

Not Qualified

TO-117

2N4041 by Texas Instruments

2N4041

Texas Instruments

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 400 MHz; Maximum Power Dissipation (Abs): 18 W; Maximum Collector Current (IC): 1 A;

NPN

SINGLE

YES

400 MHz

18 W

1 A

CERAMIC, METAL-SEALED COFIRED

FLAT

ROUND

1

4

DISK BUTTON

Other Transistors

10

175 Cel

SILICON

40 V

RADIAL

O-CRDB-F4

Not Qualified

TO-117