Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.
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BFP720F-E6327
Infineon Technologies
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .08 W; Maximum Collector Current (IC): .02 A; Transistor Element Material: SILICON GERMANIUM; No. of Elements: 1;
.02 A
160
1
260
NPN
.08 W
BIP RF Small Signal
YES
SILICON GERMANIUM
BFU725F/N1,115
NXP Semiconductors
BFU725F/N1,115 by NXP Semiconductors is an NPN RF Small Signal BJT with a max power dissipation of 0.136W and min DC current gain of 160. It features silicon germanium material and can handle a max collector current of 0.04A. Ideal for applications requiring high-frequency signal amplification in compact electronic devices.
.04 A
e3
.136 W
TIN
30
2SC5754-A
Renesas Electronics
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .735 W; Maximum Collector Current (IC): .5 A; No. of Elements: 1; Transistor Element Material: SILICON;
.5 A
40
.735 W
SILICON
BFP740F-E6327
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;
.045 A
.14 pF
4 V
SINGLE
X BAND
R-PDSO-F4
4
150 Cel
-55 Cel
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
.16 W
12.5 dB
Other Transistors
FLAT
DUAL
AMPLIFIER
SILICON GERMANIUM CARBON
42000 MHz
BFU760F,115
The NXP Semiconductors BFU760F,115 is an NPN RF BJT with a max power dissipation of 0.22W and min DC current gain of 155. It is ideal for surface mount applications in circuits requiring a max collector current of 0.07A, featuring silicon germanium transistor element material and tin terminal finish.
.07 A
155
.22 W
BFU730F,115
NXP Semiconductors' BFU730F,115 is an NPN RF BJT with max. power dissipation of 0.197W and min. DC current gain of 205. Ideal for surface mount applications, it has a max. collector current of 0.03A and uses silicon germanium material.
.03 A
205
.197 W
BSR12,215
BSR12,215 by NXP Semiconductors is a PNP RF small signal BJT designed for switching applications. It features a max collector current of 0.1 A, operates up to 150 °C, and supports frequencies in the S band with a nominal transition frequency of 1500 MHz. Its compact surface mount design ensures efficient performance in electronic circuits.
.1 A
4.5 pF
15 V
S BAND
TO-236AB
R-PDSO-G3
3
PNP
.25 W
Not Qualified
MATTE TIN
GULL WING
SWITCHING
1500 MHz
2SC5337-AZ
NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .25 A; Minimum DC Current Gain (hFE): 60;
.25 A
60
2 W
NESG2101M05-A
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .1 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 130;
130
.5 W
NESG2101M05-T1-A
2SC5754-T2-A
NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .735 W; Maximum Collector Current (IC): .5 A; Minimum DC Current Gain (hFE): 40; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED;
NOT SPECIFIED
2SC5508-A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 20000 MHz; Maximum Power Dissipation (Abs): .115 W; Maximum Collector Current (IC): .035 A;
.035 A
50
.115 W
20000 MHz
2SC5508-T2-A
2SC5509-A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 13000 MHz; Maximum Power Dissipation (Abs): .19 W; Maximum Collector Current (IC): .1 A;
.19 W
13000 MHz
BFP540ESDE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 34000 MHz; Maximum Collector Current (IC): .08 A; Package Shape: RECTANGULAR;
HIGH RELIABILITY, LOW NOISE
EMITTER
.08 A
.24 pF
L BAND
R-PDSO-G4
34000 MHz
BF517E6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2000 MHz; Maximum Power Dissipation (Abs): .28 W; Maximum Collector Current (IC): .025 A;
.025 A
.75 pF
.28 W
2000 MHz
BF799E6327HTSA1
BF799E6327HTSA1 by Infineon Technologies is a NPN RF BJT transistor with 3 terminals. It operates in the ultra high frequency band at 1100 MHz, suitable for switching applications. With a max power dissipation of 0.28 W and a collector-emitter voltage of 20 V, it is designed for small outline surface mount packages.
20 V
ULTRA HIGH FREQUENCY BAND
1100 MHz
BFP193WE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .08 A; Highest Frequency Band: L BAND;
COLLECTOR
.9 pF
12 V
8000 MHz
BFP196WE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 7500 MHz; Maximum Collector Current (IC): .1 A; No. of Terminals: 4;
1.4 pF
7500 MHz
BFS17WE6327HTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Base Capacitance: .8 pF;
.8 pF
2500 MHz
NE68133-T1B-R33-A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .065 A; Maximum Collector-Emitter Voltage: 10 V;
LOW NOISE
.065 A
10 V
9000 MHz
NE68133-T1B-R35-A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .065 A; No. of Terminals: 3;
NE68133-A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Collector Current (IC): .065 A; Peak Reflow Temperature (C): NOT SPECIFIED;
BFU690F,115
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 18000 MHz; Maximum Power Dissipation (Abs): .23 W; Maximum Collector Current (IC): .1 A;
5.5 V
90
KA BAND
.23 W
18000 MHz
NE851M13-T3-A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6500 MHz; Maximum Power Dissipation (Abs): .14 W; Maximum Collector Current (IC): .1 A;
100
R-PDSO-F3
.14 W
6500 MHz
BFP405FH6327XTSA1
BFP405FH6327XTSA1 by Infineon Technologies is a NPN RF BJT with built-in diode, ideal for amplifier applications in L Band. Featuring 4 terminals, it has a max fT of 25 GHz and VCE of 4.5V. This small outline transistor has a collector current of 0.012A and low capacitance at 0.1pF, meeting AEC-Q101 standards.
HIGH RELIABILITY
.012 A
.1 pF
4.5 V
SINGLE WITH BUILT-IN DIODE
AEC-Q101
25000 MHz
BFP540FESDH6327XTSA1
BFP540FESDH6327XTSA1 by Infineon is a NPN RF BJT transistor with 4.5V VCEO, 0.08A IC, and 30GHz fT. It is used in S Band amplifiers for high-frequency applications. The package is small outline, surface mountable with flat terminals, suitable for AEC-Q101 standards.
.26 pF
30000 MHz
BFP620FH7764XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 65000 MHz; Maximum Collector Current (IC): .08 A; No. of Terminals: 4;
LOW NOISE, HIGH RELIABILITY
.2 pF
2.3 V
C BAND
65000 MHz
BFR183WH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .065 A; Terminal Position: DUAL;
.7 pF
BFR340FH6327XTSA1
The BFR340FH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor with a maximum collector-emitter voltage of 6V. It has a rectangular package shape and is suitable for amplifier applications in the S band. The transistor has a maximum collector current of 0.02A and a nominal transition frequency of 14,000MHz.
.4 pF
6 V
14000 MHz
BGR420H6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Package Style (Meter): SMALL OUTLINE; Moisture Sensitivity Level (MSL): 1;
BF799WH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 1100 MHz; Maximum Collector Current (IC): .035 A; Moisture Sensitivity Level (MSL): 1;
BFP640FESDH6327XTSA1
BFP640FESDH6327XTSA1 by Infineon Technologies is a NPN RF BJT transistor with 4.1V VCE, 0.05A IC, and fT of 46GHz. It is used for X Band amplifier applications in automotive electronics, meeting AEC-Q101 standards. This surface-mount device has a small outline package with 4 terminals and silicon germanium carbon element material.
.05 A
4.1 V
46000 MHz
BFR720L3RHE6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .02 A; Package Shape: RECTANGULAR;
R-XBCC-N3
UNSPECIFIED
CHIP CARRIER
NO LEAD
BOTTOM
45000 MHz
BFR92WH6327XTSA1
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Collector Current (IC): .045 A; Package Style (Meter): SMALL OUTLINE;
.6 pF
5000 MHz
BFS17SH6327XTSA1
The Infineon Technologies BFS17SH6327XTSA1 is an NPN RF BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 15V, fT of 2500 MHz, and a small outline package style for surface mount assembly.
SEPARATE, 2 ELEMENTS
R-PDSO-G6
2
6
BFS17WH6327XTSA1
BFS17WH6327XTSA1 by Infineon Technologies is an NPN RF small signal bipolar junction transistor (BJT) with a max collector-emitter voltage of 15V and a nominal transition frequency of 2500MHz. It is commonly used as an amplifier in applications requiring ultra high frequency band performance.
NTE123A
Nte Electronics
NTE123A by Nte Electronics is a NPN RF BJT transistor with max. collector-emitter voltage of 40V, fT of 300MHz, and hFE min. of 100. Ideal for high-frequency switching applications due to its very high frequency band capability and max. power dissipation of 0.4W in a cylindrical package with wire terminals.
.8 A
40 V
VERY HIGH FREQUENCY BAND
TO-18
O-MBCY-W3
METAL
ROUND
CYLINDRICAL
.4 W
NO
WIRE
300 MHz
IMX5T108
ROHM
ROHM's IMX5T108 is a NPN BJT transistor with 2 elements, ideal for amplifier applications. It has a max power dissipation of 0.3W, fT of 1400MHz, and hFE of 27. The package is small outline with gull wing terminals, suitable for surface mount assembly at up to 260°C peak reflow temperature.
27
e1
.3 W
TIN SILVER COPPER
10
1400 MHz
PN5179/D26Z
National Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 900 MHz; Terminal Position: BOTTOM; Terminal Form: THROUGH-HOLE;
1 pF
25
TO-92
O-PBCY-T3
15 dB
THROUGH-HOLE
900 MHz
.4 V
BFR93A,235
NXP Semiconductors' BFR93A,235 is a NPN RF BJT transistor with 3 terminals. It operates in L Band with fT of 6000 MHz and hFE of 40. Ideal for amplifier applications, it has a max power dissipation of 0.35W and can handle up to 12V collector-emitter voltage.
175 Cel
.35 W
6000 MHz
2SC4774T106S
ROHM 2SC4774T106S is an NPN BJT transistor for switching applications in the UHF band. Features include VCEsat of 0.3V, hFE of 270, and fT of 800MHz. With a max operating temp of 150°C, it has a small outline package with gull wing terminals for surface mount assembly.
1.7 pF
270
.15 W
Tin/Silver/Copper (Sn/Ag/Cu)
800 MHz
.3 V
EMX5T2R
ROHM's EMX5T2R is a NPN BJT with 2 elements, ideal for amplifier applications. It features a max collector-emitter voltage of 11V, fT of 3200MHz, and hFE min of 27. With a small outline package style and surface mount capability, it offers high performance in compact designs.
1.55 pF
11 V
R-PDSO-F6
e2
TIN COPPER
3200 MHz
NE68530-T1-A
NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 12000 MHz; Maximum Collector Current (IC): .03 A; Maximum Operating Temperature: 150 Cel;
75
12000 MHz
NE68539-T1-A
.5 pF
AT-41535G
Broadcom
NPN; Configuration: SINGLE; Surface Mount: YES; Terminal Finish: MATTE TIN; Package Style (Meter): DISK BUTTON; Maximum Operating Temperature: 150 Cel;
O-MRDB-F4
DISK BUTTON
RADIAL
START499D
STMicroelectronics
START499D by STMicroelectronics is an NPN RF small signal BJT designed for surface mount applications. It features a max power dissipation of 1.7 W, operates up to 150 °C, and supports a collector current of 1 A. Ideal for compact electronic circuits requiring efficient signal amplification.
1 A
R-PSSO-F3
1.7 W
BF199,112
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 550 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .025 A;
25 V
550 MHz
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