Loading...

RF Small Signal Bipolar Junction Transistors (BJT)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal BJTs are available in various types and configurations, including NPN and PNP bipolar transistors, and can handle power levels ranging from a few milliwatts to a few watts. They are subject to various standards and regulations, such as JEDEC (Joint Electron Device Engineering Council) and RoHS (Restriction of Hazardous Substances), to ensure their safety and performance.

RF Small Signal Bipolar Junction Transistors (BJT)

Available Parts 2,400+

Part RoHS Manufacturer Description Polarity or Channel Type Configuration Surface Mount Nominal Transition Frequency (fT) Maximum Power Dissipation (Abs) Maximum Collector Current (IC) Package Body Material Transistor Application Maximum VCEsat Minimum Power Gain (Gp) Terminal Form Package Shape No. of Elements Highest Frequency Band No. of Terminals Package Style (Meter) Sub-Category Maximum Power Dissipation Ambient Minimum DC Current Gain (hFE) Maximum Operating Temperature Maximum Collector-Base Capacitance Transistor Element Material Maximum Collector-Emitter Voltage Maximum Turn On Time (ton) Minimum Operating Temperature Maximum Turn Off Time (toff) Terminal Finish Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Reference Standard
3003 by Microsemi

3003

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .6 A; Package Body Material: CERAMIC, METAL-SEALED COFIRED; Terminal Form: FLAT;

NPN

SINGLE

YES

.6 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

3001 by Microsemi

3001

Microsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Maximum Collector Current (IC): .2 A; Package Style (Meter): FLANGE MOUNT; Transistor Element Material: SILICON;

NPN

SINGLE

YES

.2 A

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

2

FLANGE MOUNT

200 Cel

SILICON

TIN LEAD

DUAL

R-CDFM-F2

Not Qualified

HIGH RELIABILITY

e0

BFR106E6327HTSA1 by Infineon Technologies

BFR106E6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .7 W; Maximum Collector Current (IC): .1 A;

NPN

SINGLE

YES

5000 MHz

.7 W

.1 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

70

150 Cel

1.5 pF

SILICON

15 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BFR93AE6327HTSA1 by Infineon Technologies

BFR93AE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

NPN

SINGLE

YES

6000 MHz

.3 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

3

SMALL OUTLINE

Other Transistors

70

150 Cel

.9 pF

SILICON

12 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BFR92PE6327HTSA1 by Infineon Technologies

BFR92PE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .28 W; Maximum Collector Current (IC): .03 A;

NPN

SINGLE

YES

5000 MHz

.28 W

.03 A

PLASTIC/EPOXY

SWITCHING

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

Other Transistors

70

150 Cel

.6 pF

SILICON

15 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

BFT92,215 by NXP Semiconductors

BFT92,215

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

PNP

SINGLE

YES

5000 MHz

.3 W

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

.3 W

20

150 Cel

SILICON

15 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

CECC

BFR93AWH6327XTSA1 by Infineon Technologies

BFR93AWH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Collector Current (IC): .09 A; JESD-609 Code: e3;

NPN

SINGLE

YES

6000 MHz

.09 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

.8 pF

SILICON

12 V

TIN

DUAL

R-PDSO-G3

1

e3

AEC-Q101

BFT92W,115 by NXP Semiconductors

BFT92W,115

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

PNP

SINGLE

YES

4000 MHz

.3 W

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

Other Transistors

.3 W

20

150 Cel

SILICON

15 V

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

BFT92WT/R by NXP Semiconductors

BFT92WT/R

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

PNP

SINGLE

YES

4000 MHz

.3 W

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

Other Transistors

.3 W

20

150 Cel

SILICON

15 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

MMBTH81 by Onsemi

MMBTH81

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;

PNP

SINGLE

YES

600 MHz

.35 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

60

150 Cel

.85 pF

SILICON

20 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AA

e3

30

260

BFT92W by NXP Semiconductors

BFT92W

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 4000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

PNP

SINGLE

YES

4000 MHz

.3 W

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

Other Transistors

.3 W

20

150 Cel

SILICON

15 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

HIGH RELIABILITY

e3

30

260

BFT92E6327 by Infineon Technologies

BFT92E6327

Infineon Technologies

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .2 W; Maximum Collector Current (IC): .025 A;

PNP

SINGLE

YES

5000 MHz

.2 W

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

Other Transistors

15

150 Cel

.8 pF

SILICON

15 V

-65 Cel

DUAL

R-PDSO-G3

1

Not Qualified

260

BFS17WH6327XTSA1 by Infineon Technologies

BFS17WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Collector Current (IC): .025 A; Maximum Collector-Base Capacitance: .8 pF;

NPN

SINGLE

YES

2500 MHz

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.8 pF

SILICON

15 V

MATTE TIN

DUAL

R-PDSO-G3

1

e3

BFP650FH6327XTSA1 by Infineon Technologies

BFP650FH6327XTSA1

Infineon Technologies

RF Small Signal Bipolar Transistors; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1; Terminal Finish: TIN;

TIN

1

e3

BFT92 by NXP Semiconductors

BFT92

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

PNP

SINGLE

YES

5000 MHz

.3 W

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

.3 W

20

175 Cel

SILICON

15 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

CECC

BFU530AR by NXP Semiconductors

BFU530AR

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Collector Current (IC): .04 A; Package Style (Meter): SMALL OUTLINE;

NPN

SINGLE

YES

11000 MHz

.04 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

SILICON

12 V

TIN

DUAL

R-PDSO-G3

1

LOW NOISE

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

BFU590GX by NXP Semiconductors

BFU590GX

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8500 MHz; Maximum Power Dissipation (Abs): 2 W; Maximum Collector Current (IC): .2 A;

NPN

SINGLE

YES

8500 MHz

2 W

.2 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

4

SMALL OUTLINE

60

150 Cel

1.9 pF

SILICON

12 V

-40 Cel

DUAL

R-PDSO-G4

1

COLLECTOR

260

AEC-Q101; IEC-60134

BFR93AW,115 by NXP Semiconductors

BFR93AW,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A;

NPN

SINGLE

YES

5000 MHz

.3 W

.035 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

.3 W

40

150 Cel

SILICON

12 V

TIN

DUAL

R-PDSO-G3

Not Qualified

HIGH RELIABILITY

e3

30

260

BFT92T/R by NXP Semiconductors

BFT92T/R

NXP Semiconductors

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

PNP

SINGLE

YES

5000 MHz

.3 W

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

.3 W

20

150 Cel

SILICON

15 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

CECC

BFR93AW-E6327 by Infineon Technologies

BFR93AW-E6327

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .05 A;

NPN

SINGLE

YES

6000 MHz

.3 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

Other Transistors

50

150 Cel

.9 pF

SILICON

12 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

260

BFP450H6327XTSA1 by Infineon Technologies

BFP450H6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Collector Current (IC): .15 A; Package Body Material: PLASTIC/EPOXY;

NPN

SINGLE

YES

42000 MHz

.15 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

X BAND

4

SMALL OUTLINE

.4 pF

SILICON GERMANIUM CARBON

4 V

TIN

DUAL

R-PDSO-G4

1

LOW NOISE

e3

AEC-Q101

BFR93A,215 by NXP Semiconductors

BFR93A,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .035 A;

NPN

SINGLE

YES

6000 MHz

.35 W

.035 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

Other Transistors

.3 W

40

175 Cel

SILICON

12 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

CECC

MMBTH10LT1G by Onsemi

MMBTH10LT1G

Onsemi

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 650 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

NPN

SINGLE

YES

650 MHz

.3 W

.025 A

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

60

150 Cel

.7 pF

SILICON

25 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

30

260

BFR520 by NXP Semiconductors

BFR520

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 9000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .07 A;

NPN

SINGLE

YES

9000 MHz

.3 W

.07 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

Other Transistors

.3 W

60

175 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE, HIGH RELIABILITY

e3

30

260

CECC

BFS17PE6327HTSA1 by Infineon Technologies

BFS17PE6327HTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 2500 MHz; Maximum Power Dissipation (Abs): .28 W; Maximum Collector Current (IC): .025 A;

NPN

SINGLE

YES

2500 MHz

.28 W

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

40

150 Cel

.8 pF

SILICON

15 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

NSVMMBTH81LT3G by Onsemi

NSVMMBTH81LT3G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;

PNP

SINGLE

YES

600 MHz

.225 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

.225 W

60

150 Cel

.85 pF

SILICON

20 V

-55 Cel

MATTE TIN

DUAL

R-PDSO-G3

1

TO-236

e3

30

260

AEC-Q101

BFP650H6327XTSA1 by Infineon Technologies

BFP650H6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Collector Current (IC): .15 A; Additional Features: LOW NOISE;

NPN

SINGLE

YES

42000 MHz

.15 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

X BAND

4

SMALL OUTLINE

.4 pF

SILICON GERMANIUM CARBON

4 V

TIN

DUAL

R-PDSO-G4

1

LOW NOISE

e3

AEC-Q101

BFR181WH6327XTSA1 by Infineon Technologies

BFR181WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .02 A; Terminal Form: GULL WING;

NPN

SINGLE

YES

8000 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

.45 pF

SILICON

12 V

TIN

DUAL

R-PDSO-G3

1

e3

AEC-Q101

BFP740FESDH6327XTSA1 by Infineon Technologies

BFP740FESDH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 47000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;

NPN

SINGLE

YES

47000 MHz

.16 W

.045 A

PLASTIC/EPOXY

AMPLIFIER

14 dB

FLAT

RECTANGULAR

1

X BAND

4

SMALL OUTLINE

160

150 Cel

.08 pF

SILICON GERMANIUM CARBON

4.2 V

-55 Cel

TIN

DUAL

R-PDSO-F4

1

e3

BFR93AR,215 by NXP Semiconductors

BFR93AR,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .035 A;

NPN

SINGLE

YES

6000 MHz

.3 W

.035 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

C BAND

3

SMALL OUTLINE

Other Transistors

40

175 Cel

.6 pF

SILICON

12 V

MATTE TIN

DUAL

R-PDSO-G3

Not Qualified

e3

NSVMMBTH81LT1G by Onsemi

NSVMMBTH81LT1G

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .225 W; Maximum Collector Current (IC): .05 A;

PNP

SINGLE

YES

600 MHz

.225 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

.5 V

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

.225 W

60

150 Cel

.85 pF

SILICON

20 V

-55 Cel

DUAL

R-PDSO-G3

TO-236

AEC-Q101

BFR92AW,115 by NXP Semiconductors

BFR92AW,115

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .3 W; Maximum Collector Current (IC): .025 A;

NPN

SINGLE

YES

5000 MHz

.3 W

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

.3 W

40

150 Cel

SILICON

15 V

TIN

DUAL

R-PDSO-G3

Not Qualified

HIGH RELIABILITY

e3

30

260

HFA3046BZ by Renesas Electronics

HFA3046BZ

Renesas Electronics

NPN; Configuration: COMPLEX; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Moisture Sensitivity Level (MSL): 3; Peak Reflow Temperature (C): 260;

NPN

COMPLEX

YES

8000 MHz

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

5

ULTRA HIGH FREQUENCY BAND

14

SMALL OUTLINE

SILICON

8 V

MATTE TIN

DUAL

R-PDSO-G14

3

LOW NOISE

MS-012AB

e3

30

260

BFP740ESDH6327XTSA1 by Infineon Technologies

BFP740ESDH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Power Dissipation (Abs): .16 W; Maximum Collector Current (IC): .045 A;

NPN

SINGLE

YES

45000 MHz

.16 W

.045 A

PLASTIC/EPOXY

AMPLIFIER

14.5 dB

GULL WING

RECTANGULAR

1

C BAND

4

SMALL OUTLINE

160

150 Cel

.8 pF

SILICON GERMANIUM CARBON

4.2 V

-55 Cel

TIN

DUAL

R-PDSO-G4

1

e3

BFR193WH6327XTSA1 by Infineon Technologies

BFR193WH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .08 A; Additional Features: LOW NOISE;

NPN

SINGLE

YES

8000 MHz

.08 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

1 pF

SILICON

12 V

TIN

DUAL

R-PDSO-G3

1

LOW NOISE

e3

AEC-Q101

MMBTH81_NL by Fairchild Semiconductor

MMBTH81_NL

Fairchild Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .05 A;

PNP

SINGLE

YES

600 MHz

.35 W

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

60

150 Cel

.85 pF

SILICON

20 V

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AA

e3

40

260

MMBTH81LT1 by Onsemi

MMBTH81LT1

Onsemi

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; No. of Terminals: 3; Terminal Form: GULL WING;

PNP

SINGLE

YES

600 MHz

PLASTIC/EPOXY

GULL WING

RECTANGULAR

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

.85 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

BFR93A,235 by NXP Semiconductors

BFR93A,235

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 6000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .035 A;

NPN

SINGLE

YES

6000 MHz

.35 W

.035 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

Other Transistors

40

175 Cel

SILICON

12 V

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

BFU550AR by NXP Semiconductors

BFU550AR

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 11000 MHz; Maximum Power Dissipation (Abs): .45 W; Maximum Collector Current (IC): .08 A;

NPN

SINGLE

YES

11000 MHz

.45 W

.08 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

60

150 Cel

.74 pF

SILICON

16 V

-40 Cel

TIN

DUAL

R-PDSO-G3

1

TO-236AB

e3

30

260

AEC-Q101; IEC-60134

MMBTH81D87Z by National Semiconductor

MMBTH81D87Z

National Semiconductor

PNP; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 600 MHz; Maximum Collector Current (IC): .05 A; JEDEC-95 Code: TO-236AB;

PNP

SINGLE

YES

600 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

.85 pF

SILICON

20 V

DUAL

R-PDSO-G3

Not Qualified

TO-236AB

BFP540FESDH6327XTSA1 by Infineon Technologies

BFP540FESDH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 30000 MHz; Maximum Collector Current (IC): .08 A; Reference Standard: AEC-Q101;

NPN

SINGLE

YES

30000 MHz

.08 A

PLASTIC/EPOXY

AMPLIFIER

FLAT

RECTANGULAR

1

S BAND

4

SMALL OUTLINE

.26 pF

SILICON

4.5 V

TIN

DUAL

R-PDSO-F4

1

LOW NOISE

e3

AEC-Q101

BFS481H6327XTSA1 by Infineon Technologies

BFS481H6327XTSA1

Infineon Technologies

NPN; Configuration: SEPARATE, 2 ELEMENTS; Surface Mount: YES; Nominal Transition Frequency (fT): 8000 MHz; Maximum Collector Current (IC): .02 A; Maximum Collector-Emitter Voltage: 12 V;

NPN

SEPARATE, 2 ELEMENTS

YES

8000 MHz

.02 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

2

L BAND

6

SMALL OUTLINE

.4 pF

SILICON

12 V

TIN

DUAL

R-PDSO-G6

1

e3

AEC-Q101

BFU760F,115 by NXP Semiconductors

BFU760F,115

NXP Semiconductors

NPN; Surface Mount: YES; Maximum Power Dissipation (Abs): .22 W; Maximum Collector Current (IC): .07 A; No. of Elements: 1; Minimum DC Current Gain (hFE): 155;

NPN

YES

.22 W

.07 A

1

BIP RF Small Signal

155

SILICON GERMANIUM

TIN

1

e3

30

260

BFR740L3RHE6327XTSA1 by Infineon Technologies

BFR740L3RHE6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 42000 MHz; Maximum Collector Current (IC): .03 A; Terminal Position: BOTTOM;

NPN

SINGLE

YES

42000 MHz

.03 A

UNSPECIFIED

AMPLIFIER

NO LEAD

RECTANGULAR

1

X BAND

3

CHIP CARRIER

.15 pF

SILICON GERMANIUM

4 V

PALLADIUM GOLD

BOTTOM

R-XBCC-N3

1

EMITTER

HIGH RELIABILITY, LOW NOISE

e4

BFP720H6327XTSA1 by Infineon Technologies

BFP720H6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .025 A; Terminal Position: DUAL;

NPN

SINGLE

YES

45000 MHz

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

X BAND

4

SMALL OUTLINE

SILICON GERMANIUM CARBON

4 V

TIN

DUAL

R-PDSO-G4

1

e3

AEC-Q101

BFR92A,215 by NXP Semiconductors

BFR92A,215

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 5000 MHz; Maximum Power Dissipation (Abs): .35 W; Maximum Collector Current (IC): .025 A;

NPN

SINGLE

YES

5000 MHz

.35 W

.025 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

Other Transistors

.3 W

40

175 Cel

SILICON

15 V

TIN

DUAL

R-PDSO-G3

Not Qualified

LOW NOISE

e3

30

260

CECC

BFP640ESDH6327XTSA1 by Infineon Technologies

BFP640ESDH6327XTSA1

Infineon Technologies

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 45000 MHz; Maximum Collector Current (IC): .05 A; Transistor Element Material: SILICON GERMANIUM CARBON;

NPN

SINGLE

YES

45000 MHz

.05 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

X BAND

4

SMALL OUTLINE

SILICON GERMANIUM CARBON

4.1 V

TIN

DUAL

R-PDSO-G4

1

e3

AEC-Q101

BFU520AR by NXP Semiconductors

BFU520AR

NXP Semiconductors

NPN; Configuration: SINGLE; Surface Mount: YES; Nominal Transition Frequency (fT): 10000 MHz; Maximum Collector Current (IC): .03 A; Additional Features: LOW NOISE;

NPN

SINGLE

YES

10000 MHz

.03 A

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

1

L BAND

3

SMALL OUTLINE

SILICON

12 V

TIN

DUAL

R-PDSO-G3

1

LOW NOISE

TO-236AB

e3

30

260

AEC-Q101; IEC-60134