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BFS17SH6327XTSA1

Infineon Technologies

BFS17SH6327XTSA1 by Infineon Technologies

The Infineon Technologies BFS17SH6327XTSA1 is an NPN RF BJT transistor with 2 elements, ideal for amplifier applications in the ultra-high frequency band. It features a max collector-emitter voltage of 15V, fT of 2500 MHz, and a small outline package style for surface mount assembly.

Median Price

$0.062

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 285,000 parts In-Stock

1+ parts

$0.098

100+ parts

-

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10k+ parts

$0.026

285,000

$0.098

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-

$0.026

Verical

USA . 285,000 parts In-Stock

1+ parts

-

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$0.026

285,000

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$0.026

Avnet

USA . 3,000 parts In-Stock

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3,000

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Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

1+ parts

$0.097

100+ parts

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10

$0.097

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Chip Stock

USA . 64,500 parts In-Stock

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64,500

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Vyrian

USA . 7,549 parts In-Stock

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7,549

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VNN

France . 3,798 parts In-Stock

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3,798

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Digiode

USA . 696 parts In-Stock

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696

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Argo Parts USA

USA . 1,249 parts In-Stock

1+ parts

$0.097

100+ parts

-

1k+ parts

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10k+ parts

$0.094

1,249

$0.097

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-

$0.094

Continental Prestige Electronics

USA . 595 parts In-Stock

1+ parts

$0.097

100+ parts

-

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$0.095

595

$0.097

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-

$0.095

Aztec Data Supply Inc.

USA . 857 parts In-Stock

1+ parts

$1.030

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857

$1.030

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Modulus Dynamics

Lithuania . 6,602 parts In-Stock

1+ parts

$1.854

100+ parts

$1.780

1k+ parts

$1.706

10k+ parts

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6,602

$1.854

$1.780

$1.706

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Corohmni

South Africa . 475 parts In-Stock

1+ parts

$1.945

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475

$1.945

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AZTECH Wire

Italy . 374 parts In-Stock

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$15.070

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374

$15.070

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Ampacity Inc.

Singapore . 2,732 parts In-Stock

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$28.050

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2,732

$28.050

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Semicontronic

India . 2,992 parts In-Stock

1+ parts

$61.050

100+ parts

$59.524

1k+ parts

$59.218

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2,992

$61.050

$59.524

$59.218

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Perfect Parts

USA . 99,100 parts In-Stock

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99,100

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Eastek

USA . 93,000 parts In-Stock

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93,000

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Authorized Procurement Solutions

USA . 5,000 parts In-Stock

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Corphita

USA . 379 parts In-Stock

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379

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Microchip USA

USA . 268 parts In-Stock

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268

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Overview

Unlock the power of high-performance RF amplification with the BFS17SH6327XTSA1 by Infineon Technologies. Crafted with precision and expertise, this NPN transistor boasts a compact design and ultra-high frequency capabilities, making it ideal for a wide range of applications. From enhancing signal strength to improving overall performance, this transistor offers unbeatable value and reliability. Elevate your projects with the quality and innovation that only Infineon can deliver.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the transistor, ensuring reliable performance in various applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SEPARATE, 2 ELEMENTS

Having separate 2 elements allows for flexibility in circuit design and can provide better performance in certain applications.

Transistor Application: AMPLIFIER

Designed specifically for amplifier applications, ensuring optimal performance in such circuits.

Surface Mount: YES

Being surface mountable makes this transistor easier to integrate into printed circuit boards, saving space and facilitating automated assembly.

Package Shape: RECTANGULAR

Rectangular shape is common and easy to handle during manufacturing and assembly processes.

Terminal Form: GULL WING

Gull wing terminals provide mechanical strength and ease of soldering, ensuring reliable connections in the circuit.

No. of Elements: 2

Having 2 elements allows for increased functionality and performance in the circuit.

No. of Terminals: 6

Having 6 terminals provides flexibility in circuit design and allows for more connection options.

Package Style (Meter): SMALL OUTLINE

Small outline package style helps in saving space on the PCB and is suitable for compact applications.

Maximum Collector-Base Capacitance: 0.8 pF

Low collector-base capacitance helps in high-frequency applications, minimizing signal distortion.

Maximum Collector-Emitter Voltage: 15 V

A higher collector-emitter voltage rating allows for safe operation in circuits with higher voltage levels.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability in a variety of applications.

Maximum Collector Current (IC): 0.025 A

Suitable for low-power applications where a lower collector current is required.

Terminal Finish: TIN

Tin terminal finish provides good solderability and corrosion resistance, ensuring reliable connections.

Terminal Position: DUAL

Having dual terminal positions allows for flexibility in board layout and connectivity options.

Nominal Transition Frequency (fT): 2500 MHz

High transition frequency allows for operation in ultra-high frequency applications, providing fast switching speeds.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) BFS17SH6327XTSA1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Infineon Technologies

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

.8 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G6

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

6

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Surface Mount:

YES

Terminal Finish:

TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

BFS17SH6327XTSA1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

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