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KST10MTF

Onsemi

KST10MTF by Onsemi

KST10MTF by Onsemi is an NPN RF BJT with a max power dissipation of 0.35W and fT of 650MHz. Ideal for UHF applications, it has a max VCE of 25V and hFE of 60, making it suitable for high-frequency amplification in compact designs. With a small outline package and gull wing terminals, it offers efficient surface-mount integration.

Median Price

$0.052

Lifecycle Status

Suppliers In-Stock

25

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Arrow

USA . 28,711 parts In-Stock

1+ parts

$0.046

100+ parts

$0.038

1k+ parts

$0.031

10k+ parts

$0.025

28,711

$0.046

$0.038

$0.031

$0.025

DigiKey

USA . 5,171 parts In-Stock

1+ parts

$0.100

100+ parts

$0.036

1k+ parts

$0.029

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-

5,171

$0.100

$0.036

$0.029

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Mouser Electronics

USA . 682 parts In-Stock

1+ parts

$0.170

100+ parts

$0.062

1k+ parts

$0.044

10k+ parts

$0.034

682

$0.170

$0.062

$0.044

$0.034

Chip1Stop

Japan . 29,720 parts In-Stock

1+ parts

-

100+ parts

$0.057

1k+ parts

$0.041

10k+ parts

$0.032

29,720

-

$0.057

$0.041

$0.032

Verical

USA . 28,711 parts In-Stock

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-

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$0.031

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$0.025

28,711

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-

$0.031

$0.025

Rochester

USA . 3,479 parts In-Stock

1+ parts

-

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$0.029

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$0.024

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$0.021

3,479

-

$0.029

$0.024

$0.021

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 2,351 parts In-Stock

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$0.024

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2,351

$0.024

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Ozdisan Elektronik

Türkiye . 1,025 parts In-Stock

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$0.024

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1,025

$0.024

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Nova Conductors

Japan . 450 parts In-Stock

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$0.050

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450

$0.050

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TME

Poland . 873 parts In-Stock

1+ parts

$0.060

100+ parts

$0.039

1k+ parts

$0.035

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$0.029

873

$0.060

$0.039

$0.035

$0.029

DF Sales Co.

USA . 2,090 parts In-Stock

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$0.100

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DF Sales Co.

USA . 2,090 parts In-Stock

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$0.100

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$0.100

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J2 Sourcing AB

Sweden . 650,940 parts In-Stock

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Flip Electronics

USA . 66,000 parts In-Stock

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Chip Stock

USA . 53,000 parts In-Stock

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North Shore Components

USA . 21,000 parts In-Stock

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NAC Semi

USA . 21,000 parts In-Stock

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$0.035

21,000

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$0.035

Vyrian

USA . 18,744 parts In-Stock

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Sea View Technologies

USA . 3,000 parts In-Stock

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3,000

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ACDS - Activité Composants Distribution Service

France . 3,000 parts In-Stock

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Bristol Electronics

USA . 3,000 parts In-Stock

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Dan-Mar Components

USA . 3,000 parts In-Stock

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Cyclops Electronics Ltd

UK . 2,710 parts In-Stock

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Atlantic Semiconductor

USA . 495 parts In-Stock

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495

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LWI Electronics Inc

India . 64 parts In-Stock

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64

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Distributors (Availability)

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Ampacity Inc.

Singapore . 18,743 parts In-Stock

1+ parts

$0.021

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18,743

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Corphita

USA . 2,266 parts In-Stock

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Corohmni

South Africa . 394 parts In-Stock

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$0.024

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394

$0.024

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Continental Prestige Electronics

USA . 4,671 parts In-Stock

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$0.050

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$0.049

4,671

$0.050

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$0.049

Argo Parts USA

USA . 3,007 parts In-Stock

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$0.050

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$0.049

3,007

$0.050

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$0.049

Andel Nordic

Denmark . 3,452 parts In-Stock

1+ parts

$2.961

100+ parts

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$2.843

10k+ parts

$2.843

3,452

$2.961

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$2.843

$2.843

Infinite Electronics LLP (Excess)

. 1,149,004 parts In-Stock

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Perfect Parts

USA . 106,546 parts In-Stock

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Authorized Procurement Solutions

USA . 30,000 parts In-Stock

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Lixinc

USA . 10,234 parts In-Stock

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Problanco Electronics

Mexico . 8,180 parts In-Stock

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Kulean Microsystems

USA . 5,647 parts In-Stock

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Kepictronics

USA . 5,200 parts In-Stock

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Assy Fe

Spain . 2,800 parts In-Stock

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SupplyDigital Components

Austria . 2,506 parts In-Stock

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Supply Digital

USA . 1,838 parts In-Stock

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TANS Electronics

Latvia . 1,834 parts In-Stock

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GreenTree Electronics

Israel . 1,045 parts In-Stock

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UHIMA Technologies

Türkiye . 117 parts In-Stock

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Netroflash

USA . 50 parts In-Stock

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$0.049

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$0.048

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$0.047

50

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$0.048

$0.047

Overview

Experience the superior performance and reliability of the KST10MTF RF Small Signal BJT by Onsemi. With a focus on quality and innovation, Onsemi delivers cutting-edge technology in a compact package. Ideal for ultra-high frequency applications, this NPN transistor offers customers unmatched value with its high power dissipation, dual terminal position, and impressive transition frequency of 650 MHz. Whether you're in the telecommunications or aerospace industry, the KST10MTF provides the competitive edge you need to stay ahead. Elevate your projects with Onsemi's trusted expertise and superior products.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy material makes the package lightweight and durable, ideal for portable and rugged applications.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for a wide range of signal amplification applications.

Configuration: SINGLE

The single configuration simplifies circuit design and makes it easier to integrate into existing systems.

Surface Mount: YES

Being surface mountable allows for easy and efficient PCB assembly, saving valuable space in the design.

Maximum Power Dissipation (Abs): 0.35 W

The low power dissipation capability of 0.35 W helps in minimizing heat generation and improving overall efficiency of the circuit.

Nominal Transition Frequency (fT): 650 MHz

With a high transition frequency of 650 MHz, this transistor is capable of handling high-frequency signals efficiently, making it suitable for applications requiring high-speed performance.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KST10MTF attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

YES

Terminal Finish:

MATTE TIN

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KST10MTF Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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