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SMA540B

STMicroelectronics

SMA540B by STMicroelectronics

SMA540B by STMicroelectronics is an NPN RF BJT designed for amplifier applications. It features a max collector-emitter voltage of 4.5V, a nominal transition frequency of 42GHz, and comes in a compact surface mount package. Ideal for L-band signal amplification.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,030 parts In-Stock

1+ parts

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4,030

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Vyrian

USA . 2,751 parts In-Stock

1+ parts

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2,751

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Anansix

USA . 2,120 parts In-Stock

1+ parts

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2,120

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

IDEA Electronic Components Group

UK . 1,070 parts In-Stock

1+ parts

$1.636

100+ parts

-

1k+ parts

$1.472

10k+ parts

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1,070

$1.636

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$1.472

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MKK Technologies

India . 517 parts In-Stock

1+ parts

$3.076

100+ parts

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517

$3.076

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DigiPath Technology Company

USA . 517 parts In-Stock

1+ parts

$3.076

100+ parts

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517

$3.076

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Corphita

USA . 3,371 parts In-Stock

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3,371

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Parana Technologies

USA . 597 parts In-Stock

1+ parts

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$1.956

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597

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$1.956

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Overview

Unlock superior performance and reliability with the SMA540B from STMicroelectronics, a leading name in the semiconductor industry. This NPN RF small signal transistor is perfect for amplifying signals in compact designs, delivering exceptional quality in every application. Its robust construction ensures durability while facilitating seamless integration into your projects. Experience enhanced efficiency and precision that elevate your technology to new heights—choose the SMA540B for unmatched value and performance!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy as the package body material makes this BJT lightweight and cost-effective, enhancing its suitability for a variety of applications.

Polarity or Channel Type: NPN

Being an NPN transistor allows for efficient signal amplification and is widely used in analog and digital circuits, making it versatile for engineers.

Configuration: SINGLE

A single configuration simplifies circuit design and reduces space on PCBs, making it ideal for compact electronic products.

Transistor Application: AMPLIFIER

Designed specifically for amplification, this BJT is perfect for applications requiring signal boosting, ensuring reliable performance.

Surface Mount: YES

The surface mount capability enables higher density designs and improved thermal performance, making it suitable for modern electronic devices.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on the board and aligns well with standard manufacturing processes, enhancing compatibility.

Terminal Form: GULL WING

Gull wing terminals provide easier soldering and better mechanical stability, which contributes to the reliability of the final assembly.

Highest Frequency Band: L BAND

Operating in the L band indicates good performance in RF applications, suitable for communications and radar technologies.

No. of Terminals: 4

Having 4 terminals enhances circuit integration and allows for multiple connections, fostering greater design flexibility.

Package Style (Meter): SMALL OUTLINE

The small outline package style is conducive for space-saving designs, making it an excellent choice for portable devices.

Maximum Collector-Emitter Voltage: 4.5 V

A maximum voltage rating of 4.5 V is suitable for low voltage applications, providing protection against overvoltage scenarios.

Transistor Element Material: SILICON

Silicon as the element material offers good thermal stability and performance in a wide range of temperatures, ensuring reliability.

Maximum Collector Current (IC): 0.04 A

The collector current rating of 0.04 A makes this transistor applicable for low-power designs, helping with energy efficiency.

Terminal Position: DUAL

The dual terminal position facilitates simpler connections and integration into diverse circuit layouts, offering design flexibility.

Case Connection: EMITTER

An emitter case connection is advantageous for common emitter configurations, facilitating effective signal amplification in circuits.

Nominal Transition Frequency (fT): 42000 MHz

A high transition frequency of 42000 MHz allows for efficient operation in high-frequency applications, ensuring excellent performance in communication systems.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SMA540B attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from STMicroelectronics

Specs

Case Connection:

EMITTER

Maximum Collector Current (IC):

Maximum Collector-Emitter Voltage:

4.5 V

Configuration:

Highest Frequency Band:

L BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SMA540B Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

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