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SMMBT918LT1

Onsemi

SMMBT918LT1 by Onsemi

SMMBT918LT1 by Onsemi is a NPN RF BJT transistor with 3 terminals, suitable for amplifier applications in the ultra-high frequency band. It has a max collector-emitter voltage of 15V, collector current of 0.05A, and transition frequency of 600MHz. The package is surface mountable with Gull Wing terminals in a small outline style.

Median Price

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Lifecycle Status

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2

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1k+

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Digiode

USA . 1,640 parts In-Stock

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Vyrian

USA . 722 parts In-Stock

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722

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Problanco Electronics

Mexico . 6,681 parts In-Stock

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TANS Electronics

Latvia . 6,582 parts In-Stock

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SupplyDigital Components

Austria . 6,179 parts In-Stock

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Kulean Microsystems

USA . 4,544 parts In-Stock

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Corphita

USA . 1,938 parts In-Stock

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Corohmni

South Africa . 407 parts In-Stock

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UHIMA Technologies

Türkiye . 274 parts In-Stock

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Overview

Unlock the potential of your electronic designs with the SMMBT918LT1 by Onsemi. As a leading manufacturer in the industry, Onsemi produces high-quality RF Small Signal Bipolar Junction Transistors that are perfect for a wide range of applications, including amplifiers. With its NPN polarity and ultra-high frequency band capabilities, this transistor offers unparalleled performance and reliability. Say goodbye to technical limitations and hello to innovation with the SMMBT918LT1 - the key to taking your projects to the next level.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides a lightweight and durable construction for easy handling and long-lasting performance.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplification circuits, making this product suitable for amplifier applications.

Configuration: SINGLE

Simplifies circuit design and integration, making it easier to incorporate into various electronic devices.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring reliable and efficient performance in amplifier circuits.

Surface Mount: YES

Enables easy and efficient installation on circuit boards, saving space and facilitating automated assembly processes.

Package Shape: RECTANGULAR

The rectangular shape offers a compact and standardized form factor, making it compatible with a wide range of circuit layouts.

Terminal Form: GULL WING

Gull wing terminals provide secure connections and easy soldering during assembly, ensuring reliable electrical contact.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for applications requiring high-frequency signal processing, making it ideal for ultra-high frequency circuits.

No. of Terminals: 3

Having three terminals enables versatile connection options in circuit designs, increasing flexibility for different configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space on circuit boards, making it suitable for compact electronic devices.

Maximum Collector-Base Capacitance: 3 pF

Low capacitance value minimizes signal distortion and interference, ensuring high-quality amplification in the circuit.

Maximum Collector-Emitter Voltage: 15 V

With a high voltage tolerance, this transistor can handle a wide range of voltage levels in amplifier circuits without breakdown.

Transistor Element Material: SILICON

Silicon transistors offer high performance and reliability, making them a popular choice for various electronic applications.

Maximum Collector Current (IC): 0.05 A

Able to handle up to 0.05 A of collector current, ensuring efficient power handling and performance in amplifier circuits.

Terminal Finish: Tin/Lead (Sn/Pb)

Tin/Lead terminal finish provides good solderability and conductivity, ensuring reliable connections for stable operation.

Terminal Position: DUAL

Dual terminal position offers easier and more flexible PCB layout options, accommodating different circuit board designs.

Maximum Time At Peak Reflow Temperature (s): 30

With a peak reflow time of 30 seconds, this transistor can withstand high-temperature soldering processes without damage.

Peak Reflow Temperature °C: 240

Can handle peak reflow temperatures of up to 240 °C, ensuring reliable and robust soldering connections during assembly.

Nominal Transition Frequency (fT): 600 MHz

High transition frequency allows for fast signal amplification and processing, making it suitable for high-frequency applications.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) SMMBT918LT1 attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector Current (IC):

Maximum Collector-Base Capacitance:

3 pF

Maximum Collector-Emitter Voltage:

15 V

Configuration:

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-236AF

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e0

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

240

Polarity or Channel Type:

NPN

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Finish:

Tin/Lead (Sn/Pb)

Terminal Form:

GULL WING

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

SMMBT918LT1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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