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KSP10BU

Onsemi

KSP10BU by Onsemi

The Onsemi KSP10BU is an NPN RF BJT with a max fT of 650 MHz and hFE of 60. It operates at up to 150°C, has VCEO of 25V, and CCB of 0.7pF. Commonly used in ultra-high frequency applications due to its high transition frequency and low collector-base capacitance.

Median Price

$0.048

Lifecycle Status

Suppliers In-Stock

13

In-Stock Inventory

1k+

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Arrow

USA . 19,282 parts In-Stock

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$0.040

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19,282

$0.040

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DigiKey

USA . 3,907 parts In-Stock

1+ parts

$0.120

100+ parts

$0.059

1k+ parts

$0.048

10k+ parts

$0.044

3,907

$0.120

$0.059

$0.048

$0.044

Mouser Electronics

USA . 163 parts In-Stock

1+ parts

$0.120

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$0.059

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-

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$0.044

163

$0.120

$0.059

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$0.044

Rochester

USA . 1,083,397 parts In-Stock

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$0.050

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$0.042

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$0.037

1,083,397

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$0.050

$0.042

$0.037

Verical

USA . 80,070 parts In-Stock

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$0.046

80,070

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$0.046

Master Electronics

USA . 19,500 parts In-Stock

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$0.085

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$0.055

19,500

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$0.085

$0.055

Chip1Stop

Japan . 19,432 parts In-Stock

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$0.045

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$0.040

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19,432

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$0.045

$0.040

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RS (Exports)

UK . 1,900 parts In-Stock

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$0.021

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1,900

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$0.021

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Distributors (In-Stock)

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Digiode

USA . 2,149 parts In-Stock

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$0.039

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2,149

$0.039

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Vyrian

USA . 1,456 parts In-Stock

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$0.040

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DigiKey Marketplace

USA . 75,432 parts In-Stock

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75,432

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Flip Electronics

USA . 20,000 parts In-Stock

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IBS Electronics

USA . 19,500 parts In-Stock

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$0.133

10k+ parts

$0.077

19,500

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$0.133

$0.077

Distributors (Availability)

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Corphita

USA . 2,393 parts In-Stock

1+ parts

$0.037

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2,393

$0.037

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Corohmni

South Africa . 293 parts In-Stock

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$0.040

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293

$0.040

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Advanced Electronics

New Zealand . 500 parts In-Stock

1+ parts

$2.274

100+ parts

$2.069

1k+ parts

$1.865

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500

$2.274

$2.069

$1.865

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Andel Nordic

Denmark . 3,680 parts In-Stock

1+ parts

$5.669

100+ parts

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$5.442

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$5.442

3,680

$5.669

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$5.442

$5.442

Perfect Parts

USA . 173,258 parts In-Stock

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RC Electronics

USA . 130,713 parts In-Stock

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$0.050

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GreenTree Electronics

Israel . 87,000 parts In-Stock

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Kepictronics

USA . 72,000 parts In-Stock

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Lixinc

USA . 11,617 parts In-Stock

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TANS Electronics

Latvia . 7,663 parts In-Stock

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SupplyDigital Components

Austria . 6,001 parts In-Stock

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Kulean Microsystems

USA . 5,974 parts In-Stock

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Supply Digital

USA . 1,949 parts In-Stock

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Problanco Electronics

Mexico . 1,466 parts In-Stock

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Authorized Procurement Solutions

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UHIMA Technologies

Türkiye . 182 parts In-Stock

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Overview

Upgrade your RF Small Signal Bipolar Junction Transistor game with the KSP10BU by Onsemi. Known for their high-quality products, Onsemi delivers reliable components that exceed expectations. The KSP10BU is perfect for applications in the ultra-high frequency band, offering a maximum collector-emitter voltage of 25V and a nominal transition frequency of 650 MHz. With a single NPN configuration and through-hole terminal form, this transistor provides the value and performance you need for your projects. Experience the benefits of Onsemi's expertise with the KSP10BU.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy material in the package body makes the transistor lightweight and cost-effective.

Polarity or Channel Type: NPN

NPN transistors are commonly used in amplifier circuits, making this product versatile for a variety of small signal applications.

Configuration: SINGLE

Single configuration simplifies circuit design and reduces component count, leading to a more compact and efficient system.

Package Shape: ROUND

The round package shape allows for easy mounting and integration into various electronic devices.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide strong mechanical stability and ease of soldering during assembly.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

The ultra-high frequency band capability enables high-speed signal processing and communication applications.

Maximum Power Dissipation (Abs): 0.35 W

With a maximum power dissipation of 0.35W, this transistor can handle moderate power levels without overheating.

Package Style (Meter): CYLINDRICAL

The cylindrical package style offers good heat dissipation and mechanical protection for the transistor.

Minimum DC Current Gain (hFE): 60

A minimum DC current gain of 60 ensures reliable and consistent amplification of small signals in the circuit.

Maximum Operating Temperature: 150 °C

The high maximum operating temperature of 150°C allows the transistor to function in demanding thermal conditions.

Maximum Collector-Base Capacitance: 0.7 pF

Low collector-base capacitance of 0.7 pF helps in reducing signal distortion and improving high-frequency performance.

Maximum Collector-Emitter Voltage: 25 V

With a maximum collector-emitter voltage of 25V, this transistor is suitable for low-voltage applications.

Transistor Element Material: SILICON

Silicon material in the transistor element provides good thermal stability and reliable performance over a wide temperature range.

Terminal Finish: TIN

Tin terminal finish offers good solderability and corrosion resistance for long-term reliability.

Terminal Position: BOTTOM

Bottom terminal position simplifies PCB layout and facilitates easier connections in compact electronic designs.

Nominal Transition Frequency (fT): 650 MHz

High nominal transition frequency of 650 MHz indicates fast response and excellent high-frequency performance of the transistor.

Technical Specifications

RF Small Signal Bipolar Junction Transistors (BJT) KSP10BU attributes and parameters. Explore more RF Small Signal Bipolar Junction Transistors (BJT) devices from Onsemi

Specs

Maximum Collector-Base Capacitance:

.7 pF

Maximum Collector-Emitter Voltage:

25 V

Configuration:

Minimum DC Current Gain (hFE):

60

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e3

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

NPN

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Finish:

TIN

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Nominal Transition Frequency (fT):

Trade Compliance

KSP10BU Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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