Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.
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NE350184C
Renesas Electronics
N-CHANNEL; Maximum Power Dissipation Ambient: .165 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .07 A; Maximum Drain Current (Abs) (ID): .07 A;
.07 A
150 Cel
N-CHANNEL
.165 W
FET RF Small Signal
BB502CBS-TL-H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Additional Features: LOW NOISE;
LOW NOISE
SINGLE WITH BUILT-IN DIODE
6 V
.02 A
METAL-OXIDE SEMICONDUCTOR
.05 pF
ULTRA HIGH FREQUENCY BAND
R-PDSO-G4
1
4
DUAL GATE, DEPLETION MODE
PLASTIC/EPOXY
RECTANGULAR
SMALL OUTLINE
NOT SPECIFIED
.1 W
17 dB
FET General Purpose Power
YES
GULL WING
DUAL
AMPLIFIER
SILICON
BB504CDS-TL-H
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .1 W; No. of Terminals: 4; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
.03 A
BF545B,215
NXP Semiconductors
BF545B,215 by NXP Semiconductors is an N-CHANNEL RF Small Signal FET with a DEPLETION MODE. It operates in the VERY HIGH FREQUENCY BAND and has a 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications, this transistor comes in a PLASTIC/EPOXY package with GULL WING terminals.
SINGLE
30 V
JUNCTION
VERY HIGH FREQUENCY BAND
TO-236AB
R-PDSO-G3
e3
3
DEPLETION MODE
260
.25 W
Other Transistors
TIN
30
BF1118WR
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .01 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Package Shape: RECTANGULAR;
3 V
.01 A
IEC-60134
SWITCHING
NE3513M04-T2-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (Abs) (ID): .06 A; Package Body Material: PLASTIC/EPOXY; Minimum DS Breakdown Voltage: 4 V;
4 V
.06 A
.015 A
HETERO-JUNCTION
KU BAND
R-PDSO-F4
ENHANCEMENT MODE
125 Cel
.125 W
11.5 dB
FLAT
GALLIUM ARSENIDE
NE3520S03-T1C-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Package Body Material: PLASTIC/EPOXY; Terminal Position: QUAD;
K BAND
S-PQMW-F4
SQUARE
MICROWAVE
QUAD
NE3516S02-T1C-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: QUAD; Maximum Drain Current (Abs) (ID): .06 A;
13 dB
NE5550279A-A
NE5550279A-A by Renesas Electronics is a N-CHANNEL FET with 30V DS breakdown voltage, suitable for ULTRA HIGH-FREQUENCY applications. It operates in ENHANCEMENT MODE with 0.6A drain current and 6.25W power dissipation at max 150°C temperature, featuring a RECTANGULAR MICROWAVE package style.
SOURCE
.6 A
R-XQMW-F4
UNSPECIFIED
6.25 W
NE5550279A-T1-A
NE5550279A-T1-A by Renesas Electronics is a N-CHANNEL FET with 30V DS Breakdown Voltage, 0.6A Drain Current, and 6.25W Power Dissipation. It operates in ULTRA HIGH FREQUENCY BAND for RF applications like amplifiers due to its ENHANCEMENT MODE and MICROWAVE package style.
BF998E6327HTSA1
Infineon Technologies
BF998E6327HTSA1 by Infineon Technologies is an N-CHANNEL RF FET with 12V DS Breakdown Voltage. Operating in DEPLETION MODE, it has ULTRA HIGH FREQUENCY BAND capabilities. This SMALL OUTLINE transistor is ideal for DUAL GATE applications in SOURCE connections.
12 V
Not Qualified
BF999E6327HTSA1
BF999E6327HTSA1 by Infineon Technologies is a RF Small Signal Field Effect Transistor (FET) with N-CHANNEL polarity. It operates in depletion mode and has a min DS breakdown voltage of 20V. This transistor is suitable for applications in the very high frequency band.
20 V
BF1009SE6327HTSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Package Style (Meter): SMALL OUTLINE; Additional Features: LOW NOISE;
.025 A
18 dB
BF1009SRE6327HTSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Additional Features: LOW NOISE;
BF2030E6814HTSA1
Infineon's BF2030E6814HTSA1 is an N-CHANNEL RF FET with 10V DS Breakdown Voltage, 20dB Power Gain, and operates in the Ultra High Frequency Band. Ideal for AMPLIFIER applications, this transistor has a DUAL GATE configuration in PLASTIC/EPOXY package with GULL WING terminals.
10 V
.04 A
20 dB
BF2030RE6814HTSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Operating Mode: DUAL GATE, DEPLETION MODE; No. of Terminals: 4;
.2 W
BF2030WH6814XTSA1
BF2030WH6814XTSA1 by Infineon Technologies is a N-CHANNEL RF Small Signal FET with PLASTIC/EPOXY package. It operates in DUAL GATE, DEPLETION MODE and has ULTRA HIGH FREQUENCY BAND. This transistor is commonly used as an AMPLIFIER in various applications.
BF2040E6814HTSA1
Infineon's BF2040E6814HTSA1 is an N-CHANNEL RF FET with 10V DS breakdown voltage and 20dB power gain. Ideal for amplifiers in ultra-high frequency bands, it features a dual-gate, depletion mode operation and GULL WING terminals in a small outline package.
BF2040RE6814HTSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-30 Code: R-PDSO-G4;
BF2040WH6814XTSA1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JESD-609 Code: e3;
BG3123RH6327XTSA1
N-CHANNEL; Surface Mount: YES; Terminal Position: DUAL; Terminal Form: GULL WING; Transistor Application: AMPLIFIER; Additional Features: LOW NOISE;
R-PDSO-G6
2
6
BG3130H6327XTSA1
N-CHANNEL; Surface Mount: YES; JESD-30 Code: R-PDSO-G6; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Operating Mode: DUAL GATE, DEPLETION MODE; Package Style (Meter): SMALL OUTLINE;
BG3130RH6327XTSA1
N-CHANNEL; Surface Mount: YES; JESD-30 Code: R-PDSO-G6; Terminal Form: GULL WING; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Drain Current (ID): .025 A;
NTE312
Nte Electronics
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; JESD-30 Code: O-PBCY-W3; Qualification: Not Qualified;
1 pF
TO-92
O-PBCY-W3
ROUND
CYLINDRICAL
.36 W
10 dB
NO
WIRE
BOTTOM
2N3819/D74Z
National Semiconductor
2N3819/D74Z by National Semiconductor is an N-CHANNEL RF FET with 3 terminals. It operates in DEPLETION MODE and has a Max Feedback Capacitance of 4 pF. Ideal for AMPLIFIER applications due to its SILICON element material and CYLINDRICAL package style.
4 pF
O-PBCY-T3
THROUGH-HOLE
BF1109R,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER;
11 V
.04 pF
DUAL GATE, ENHANCEMENT MODE
MATTE TIN
ATF-53189-BLK
Broadcom
Broadcom ATF-53189-BLK is an N-channel FET with 14 dB power gain, ideal for amplifier applications in C band. It has a 7V breakdown voltage, 0.3A drain current, and operates in enhancement mode. The transistor features high electron mobility technology, a max power dissipation of 1W, and can withstand temperatures up to 150°C.
7 V
.3 A
HIGH ELECTRON MOBILITY
C BAND
R-PSSO-F3
1 W
14 dB
FET RF Small Signals
ATF-53189-TR1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; No. of Elements: 1; Highest Frequency Band: C BAND;
PD84001
STMicroelectronics
PD84001 by STMicroelectronics is an N-CHANNEL RF Small Signal FET with a min DS Breakdown Voltage of 18V. It is used as an amplifier in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 1.5A and a Power Dissipation of 6W.
18 V
1.5 A
6 W
Matte Tin (Sn)
NE3517S03-T1C-A
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Field Effect Transistor Technology: HETERO-JUNCTION; Maximum Operating Temperature: 125 Cel;
R-PXMW-F4
VMMK-1218-BLKG
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 260; Transistor Element Material: GALLIUM ARSENIDE; Operating Mode: ENHANCEMENT MODE;
5 V
.1 A
R-XBCC-N3
CHIP CARRIER
.3 W
6.7 dB
NO LEAD
VMMK-1218-TR1G
Broadcom's VMMK-1218-TR1G is an N-channel RF FET with a min DS breakdown voltage of 5V and power gain of 6.7dB, ideal for amplifier applications in the Ku band. This single configuration transistor operates in enhancement mode, with a max drain current of 0.1A and high electron mobility technology for efficient performance.
2N4416-E3
Vishay Intertechnology
2N4416-E3 by Vishay Intertechnology is an N-CHANNEL FET with 10 dB Gp, operating in DEPLETION MODE. It operates in ULTRA HIGH FREQUENCY BAND for SWITCHING applications. With a max power dissipation of 0.3 W and Crss of 0.8 pF, it's ideal for RF circuits requiring high frequency performance.
.8 pF
TO-206AF
O-MBCY-W4
METAL
BF1100,215
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Minimum DS Breakdown Voltage: 14 V;
COMPLEX
14 V
.035 pF
BF1100R,215
NXP Semiconductors' BF1100R,215 is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DUAL GATE ENHANCEMENT MODE with a 14V DS Breakdown Voltage and 0.03A Drain Current. This ULTRA HIGH FREQUENCY transistor has a PLASTIC/EPOXY body, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
BF1100WR,115
NXP Semiconductors' BF1100WR,115 is an N-CHANNEL RF FET for AMPLIFIER applications. It operates in DUAL GATE, ENHANCEMENT MODE with a 14V DS Breakdown Voltage and 0.03A Drain Current. This ULTRA HIGH FREQUENCY transistor has a PLASTIC/EPOXY body, GULL WING terminals, and METAL-OXIDE SEMICONDUCTOR technology.
BF1101WR,115
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Application: AMPLIFIER; Maximum Feedback Capacitance (Crss): .035 pF; No. of Terminals: 4;
40
BF1102R,115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Additional Features: LOW NOISE; Transistor Element Material: SILICON; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
BF1105WR,115
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Transistor Element Material: SILICON; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BF1108R,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Time At Peak Reflow Temperature (s): 30; Transistor Application: SWITCHING; Qualification: Not Qualified;
GATE
BF1201WR,115
BF1201WR,115 by NXP Semiconductors is an N-CHANNEL RF FET with a built-in diode for AMPLIFIER applications. It operates in DUAL GATE, ENHANCEMENT MODE at ULTRA HIGH FREQUENCY BAND. With a max drain current of 0.03 A and power dissipation of 0.2 W, it has a small outline package style suitable for high-frequency circuits.
.03 pF
BF1202WR,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; No. of Elements: 1; Case Connection: SOURCE;
FET General Purpose Powers
BF1211,215
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
.18 W
BF1211R,215
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Form: GULL WING; Operating Mode: DUAL GATE, ENHANCEMENT MODE;
BF1211WR,115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; JESD-30 Code: R-PDSO-G4; Qualification: Not Qualified;
BF1212,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Elements: 1; Terminal Position: DUAL;
BF1212R,215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Minimum DS Breakdown Voltage: 6 V;
BF1212WR,115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; No. of Terminals: 4; Operating Mode: DUAL GATE, ENHANCEMENT MODE;
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