Loading...

RF Small Signal Field Effect Transistors (FET)

RF Small Signal Bipolar Junction Transistors (BJT) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal BJTs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal BJT consists of an emitter, base, and collector region, and works by controlling the flow of majority charge carriers (electrons or holes) between the emitter and collector through the base region. When a voltage is applied to the base-emitter junction, a small current flows through the base, allowing a larger current to flow from the emitter to the collector.

RF Small Signal Field Effect Transistors (FET) are electronic devices used in low-power RF (radio frequency) applications to amplify and control small signals. They are commonly used in applications such as wireless communication, GPS, and radio broadcasting.

RF Small Signal FETs are designed to handle low-power levels and operate at high frequencies, typically in the range of a few MHz to several GHz. They have a high gain and low noise figure, making them suitable for small signal amplification.

The RF Small Signal FET consists of a gate, source, and drain electrode, and works by controlling the flow of majority charge carriers (electrons or holes) between the source and drain regions through the gate electrode. When a voltage is applied to the gate electrode, it creates an electric field that modifies the conductivity of the channel, allowing current to flow between the source and drain.

RF Small Signal Field Effect Transistors (FET)

Available Parts 2,368

Part RoHS Manufacturer Description Polarity or Channel Type Configuration Surface Mount Maximum Power Dissipation (Abs) Package Body Material Transistor Application Minimum DS Breakdown Voltage Minimum Power Gain (Gp) Terminal Form Package Shape Operating Mode No. of Elements Highest Frequency Band Maximum Drain Current (Abs) (ID) No. of Terminals Package Style (Meter) Sub-Category Field Effect Transistor Technology Maximum Power Dissipation Ambient Maximum Operating Temperature Transistor Element Material Minimum Operating Temperature Terminal Finish Maximum Drain Current (ID) Terminal Position JESD-30 Code Moisture Sensitivity Level (MSL) Case Connection Qualification Additional Features JEDEC-95 Code JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Maximum Feedback Capacitance (Crss) Reference Standard
MMBFJ310LT1G by Onsemi

MMBFJ310LT1G

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; JEDEC-95 Code: TO-236;

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

2.5 pF

D2081UK by Tt Electronics Plc

D2081UK

Tt Electronics Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Form: GULL WING; Package Body Material: PLASTIC/EPOXY; Maximum Feedback Capacitance (Crss): .5 pF;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

65 V

11 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

DUAL

R-PDSO-G4

DRAIN

Not Qualified

LOW NOISE

NOT SPECIFIED

NOT SPECIFIED

.5 pF

SMMBFJ310LT1G by Onsemi

SMMBFJ310LT1G

Onsemi

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; Maximum Time At Peak Reflow Temperature (s): 30; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL

YES

.225 W

Other Transistors

JUNCTION

150 Cel

MATTE TIN

1

e3

30

260

MMBF4416A by Onsemi

MMBF4416A

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: JUNCTION; Transistor Element Material: SILICON;

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

.8 pF

2N4416A by Texas Instruments

2N4416A

Texas Instruments

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Terminal Position: BOTTOM; Package Shape: ROUND;

N-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

35 V

10 dB

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.8 pF

BF998E6327HTSA1 by Infineon Technologies

BF998E6327HTSA1

Infineon Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 12 V; Terminal Finish: TIN; Additional Features: LOW NOISE;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

4

SMALL OUTLINE

METAL-OXIDE SEMICONDUCTOR

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

LOW NOISE

e3

MMBFJ309LT1G by Onsemi

MMBFJ309LT1G

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-609 Code: e3; Qualification: Not Qualified;

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236

e3

40

260

2.5 pF

MMBFJ310LT3G by Onsemi

MMBFJ310LT3G

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Finish: MATTE TIN; JEDEC-95 Code: TO-236AB;

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

2.5 pF

MMBF4416 by Onsemi

MMBF4416

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Moisture Sensitivity Level (MSL): 1; Qualification: Not Qualified;

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

18 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

FET General Purpose Power

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

.9 pF

2N3819 by Texas Instruments

2N3819

Texas Instruments

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .36 W; Maximum Operating Temperature: 150 Cel; JEDEC-95 Code: TO-92;

N-CHANNEL

SINGLE

NO

.36 W

PLASTIC/EPOXY

25 V

WIRE

ROUND

DEPLETION MODE

1

3

CYLINDRICAL

Other Transistors

JUNCTION

150 Cel

SILICON

BOTTOM

O-PBCY-W3

Not Qualified

TO-92

NOT SPECIFIED

NOT SPECIFIED

4 pF

NE3210S01-T1B by Renesas Electronics

NE3210S01-T1B

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Peak Reflow Temperature (C): 230; Package Shape: UNSPECIFIED; JESD-30 Code: X-PXMW-G4;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

12 dB

GULL WING

UNSPECIFIED

DEPLETION MODE

1

KU BAND

.07 A

4

MICROWAVE

FET RF Small Signal

HETERO-JUNCTION

.165 W

125 Cel

SILICON

TIN LEAD

.015 A

UNSPECIFIED

X-PXMW-G4

SOURCE

Not Qualified

e0

30

230

2N4416 by Texas Instruments

2N4416

Texas Instruments

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Operating Mode: DEPLETION MODE; Highest Frequency Band: VERY HIGH FREQUENCY BAND;

N-CHANNEL

SINGLE

NO

.3 W

METAL

AMPLIFIER

30 V

10 dB

WIRE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

4

CYLINDRICAL

Other Transistors

JUNCTION

200 Cel

SILICON

BOTTOM

O-MBCY-W4

ISOLATED

Not Qualified

TO-72

NOT SPECIFIED

NOT SPECIFIED

.8 pF

D2089UK by Tt Electronics Plc

D2089UK

Tt Electronics Plc

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: RADIAL; No. of Terminals: 4; Maximum Feedback Capacitance (Crss): .5 pF;

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

65 V

FLAT

ROUND

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

4

DISK BUTTON

METAL-OXIDE SEMICONDUCTOR

SILICON

GOLD

RADIAL

O-CRDB-F4

SOURCE

Not Qualified

LOW NOISE

e4

.5 pF

ATF-55143-TR1G by Broadcom

ATF-55143-TR1G

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .1 A; Moisture Sensitivity Level (MSL): 1; Minimum DS Breakdown Voltage: 5 V;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

15.5 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

.1 A

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.27 W

150 Cel

SILICON

MATTE TIN

.1 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

ATF-551M4-TR1 by Broadcom

ATF-551M4-TR1

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Moisture Sensitivity Level (MSL): 1; Maximum Power Dissipation Ambient: .27 W; Transistor Application: AMPLIFIER;

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

5 V

15.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

X BAND

4

CHIP CARRIER

FET RF Small Signal

HIGH ELECTRON MOBILITY

.27 W

150 Cel

SILICON

GOLD

.1 A

BOTTOM

R-XBCC-N4

1

Not Qualified

LOW NOISE

e4

260

NE5550279A-T1-A by Renesas Electronics

NE5550279A-T1-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Case Connection: SOURCE; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Operating Temperature: 150 Cel;

N-CHANNEL

SINGLE

YES

UNSPECIFIED

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.6 A

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

6.25 W

150 Cel

SILICON

.6 A

QUAD

R-XQMW-F4

SOURCE

NE5550279A-A by Renesas Electronics

NE5550279A-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Transistor Element Material: SILICON; Maximum Power Dissipation Ambient: 6.25 W;

N-CHANNEL

SINGLE

YES

UNSPECIFIED

30 V

FLAT

RECTANGULAR

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

.6 A

4

MICROWAVE

METAL-OXIDE SEMICONDUCTOR

6.25 W

150 Cel

SILICON

.6 A

QUAD

R-XQMW-F4

SOURCE

NE3210S01 by Renesas Electronics

NE3210S01

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: HETERO-JUNCTION; Package Body Material: UNSPECIFIED; JESD-609 Code: e0;

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

3 V

12 dB

GULL WING

ROUND

DEPLETION MODE

1

KU BAND

4

DISK BUTTON

HETERO-JUNCTION

SILICON

TIN LEAD

.015 A

RADIAL

O-XRDB-G4

SOURCE

Not Qualified

e0

30

230

ATF-36163-BLKG by Broadcom

ATF-36163-BLKG

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: HIGH ELECTRON MOBILITY; Maximum Drain Current (Abs) (ID): .04 A;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

9.4 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

KU BAND

.04 A

6

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.18 W

150 Cel

GALLIUM ARSENIDE

MATTE TIN

.04 A

DUAL

R-PDSO-G6

1

Not Qualified

LOW NOISE

e3

260

SMMBFJ309LT1G by Onsemi

SMMBFJ309LT1G

Onsemi

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL

YES

.225 W

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

MATTE TIN

1

e3

30

260

MMBF4416LT1G by Onsemi

MMBF4416LT1G

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Qualification: Not Qualified; Transistor Application: AMPLIFIER;

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

30 V

10 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

.8 pF

MMBF4416LT1 by Onsemi

MMBF4416LT1

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 30 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

30 V

10 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

.8 pF

2SK197 by Renesas Electronics

2SK197

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; No. of Terminals: 3; JESD-30 Code: R-PDSO-G3;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

JUNCTION

SILICON

.02 A

DUAL

R-PDSO-G3

Not Qualified

J310 by Vishay Intertechnology

J310

Vishay Intertechnology

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: SWITCHING; JEDEC-95 Code: TO-226AA; Qualification: Not Qualified;

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

SWITCHING

25 V

WIRE

ROUND

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

SILICON

TIN LEAD

BOTTOM

O-PBCY-W3

Not Qualified

LOW NOISE

TO-226AA

e0

2.5 pF

CLF1G0035-100P by NXP Semiconductors

CLF1G0035-100P

NXP Semiconductors

RF Small Signal Field-Effect Transistors;

BF998WR,115 by NXP Semiconductors

BF998WR,115

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .3 W; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (Abs) (ID): .03 A;

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.3 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

30

260

BF998R,215 by NXP Semiconductors

BF998R,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Maximum Time At Peak Reflow Temperature (s): 30; JESD-609 Code: e3;

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

30

260

TGF2023-2-01 by Qorvo

TGF2023-2-01

Qorvo

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; JESD-30 Code: R-XUUC-N; Terminal Position: UPPER;

N-CHANNEL

SINGLE

YES

UNSPECIFIED

AMPLIFIER

NO LEAD

RECTANGULAR

DEPLETION MODE

1

KU BAND

UNCASED CHIP

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

1.25 A

UPPER

R-XUUC-N

NOT SPECIFIED

NOT SPECIFIED

BF998,215 by NXP Semiconductors

BF998,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; No. of Terminals: 4;

N-CHANNEL

SINGLE WITH BUILT-IN DIODE

YES

.2 W

PLASTIC/EPOXY

AMPLIFIER

12 V

GULL WING

RECTANGULAR

DUAL GATE, DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

.03 A

4

SMALL OUTLINE

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

150 Cel

SILICON

TIN

.03 A

DUAL

R-PDSO-G4

SOURCE

Not Qualified

LOW NOISE

e3

30

260

MMBFJ310 by Onsemi

MMBFJ310

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: JUNCTION; No. of Elements: 1; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

MATTE TIN

DUAL

R-PDSO-G3

1

Not Qualified

e3

30

260

2.5 pF

CLF1G0035-100PU by NXP Semiconductors

CLF1G0035-100PU

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; No. of Elements: 2; Terminal Form: FLAT; Package Body Material: CERAMIC, METAL-SEALED COFIRED;

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

150 V

FLAT

RECTANGULAR

DEPLETION MODE

2

S BAND

4

FLANGE MOUNT

HIGH ELECTRON MOBILITY

GALLIUM NITRIDE

DUAL

R-CDFM-F4

SOURCE

IEC-60134

NE3210S01-T1B-A by Renesas Electronics

NE3210S01-T1B-A

Renesas Electronics

N-CHANNEL; Maximum Power Dissipation Ambient: .165 W; Maximum Operating Temperature: 125 Cel; Maximum Drain Current (ID): .07 A; Maximum Drain Current (Abs) (ID): .07 A;

N-CHANNEL

.07 A

FET RF Small Signal

.165 W

125 Cel

.07 A

NE3515S02-T1C-A by Renesas Electronics

NE3515S02-T1C-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Maximum Drain Current (ID): .025 A; JESD-30 Code: R-PQMW-F4;

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

11 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

.025 A

QUAD

R-PQMW-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

SMMBFJ310LT3G by Onsemi

SMMBFJ310LT3G

Onsemi

N-CHANNEL; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: JUNCTION; JESD-609 Code: e3; Maximum Time At Peak Reflow Temperature (s): 30;

N-CHANNEL

YES

.225 W

Other Transistors

JUNCTION

150 Cel

MATTE TIN

1

e3

30

260

ATF-54143-TR1G by Broadcom

ATF-54143-TR1G

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Highest Frequency Band: C BAND; Peak Reflow Temperature (C): 260; Maximum Drain Current (Abs) (ID): .12 A;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5 V

15 dB

GULL WING

RECTANGULAR

ENHANCEMENT MODE

1

C BAND

.12 A

4

SMALL OUTLINE

FET RF Small Signal

HIGH ELECTRON MOBILITY

.725 W

150 Cel

GALLIUM ARSENIDE

MATTE TIN

.12 A

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

ATF-34143-TR1G by Broadcom

ATF-34143-TR1G

Broadcom

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 4; Highest Frequency Band: X BAND; Maximum Operating Temperature: 160 Cel;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

5.5 V

16 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

X BAND

4

SMALL OUTLINE

FET RF Small Signals

HIGH ELECTRON MOBILITY

.725 W

160 Cel

SILICON

MATTE TIN

DUAL

R-PDSO-G4

1

SOURCE

Not Qualified

e3

20

260

BF545B by NXP Semiconductors

BF545B

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 30 V; Field Effect Transistor Technology: JUNCTION;

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

SWITCHING

30 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

NE3515S02-T1D-A by Renesas Electronics

NE3515S02-T1D-A

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .165 W; Transistor Application: AMPLIFIER; JESD-30 Code: R-PQMW-F4;

N-CHANNEL

SINGLE

YES

.165 W

PLASTIC/EPOXY

AMPLIFIER

3 V

11 dB

FLAT

RECTANGULAR

DEPLETION MODE

1

KU BAND

4

MICROWAVE

Other Transistors

HETERO-JUNCTION

125 Cel

SILICON

.025 A

QUAD

R-PQMW-F4

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

BLF184XRS by NXP Semiconductors

BLF184XRS

NXP Semiconductors

N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Transistor Element Material: SILICON; Operating Mode: ENHANCEMENT MODE; Minimum Power Gain (Gp): 22.8 dB;

N-CHANNEL

COMMON SOURCE, 2 ELEMENTS

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

135 V

22.8 dB

FLAT

RECTANGULAR

ENHANCEMENT MODE

2

ULTRA HIGH FREQUENCY BAND

4

FLATPACK

METAL-OXIDE SEMICONDUCTOR

SILICON

DUAL

R-CDFP-F4

SOURCE

IEC-60134

MMBF5484LT1G by Onsemi

MMBF5484LT1G

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

16 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

.225 W

150 Cel

SILICON

-55 Cel

TIN

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

30

260

1 pF

2N3819PBFREE by Central Semiconductor

2N3819PBFREE

Central Semiconductor

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; JEDEC-95 Code: TO-92; Maximum Operating Temperature: 150 Cel; Terminal Finish: MATTE TIN OVER NICKEL;

N-CHANNEL

SINGLE

NO

PLASTIC/EPOXY

AMPLIFIER

25 V

THROUGH-HOLE

ROUND

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

CYLINDRICAL

JUNCTION

.36 W

150 Cel

SILICON

-65 Cel

MATTE TIN OVER NICKEL

BOTTOM

O-PBCY-T3

TO-92

e3

4 pF

PMBFJ309,215 by NXP Semiconductors

PMBFJ309,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Transistor Application: AMPLIFIER;

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

TIN

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

TO-236AB

e3

30

260

2.5 pF

BLF521 by NXP Semiconductors

BLF521

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): 10 W; Moisture Sensitivity Level (MSL): NOT APPLICABLE; Transistor Element Material: SILICON;

N-CHANNEL

SINGLE

YES

10 W

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

40 V

10 dB

FLAT

ROUND

ENHANCEMENT MODE

1

ULTRA HIGH FREQUENCY BAND

1 A

4

DISK BUTTON

FET General Purpose Power

METAL-OXIDE SEMICONDUCTOR

10 W

200 Cel

SILICON

1 A

RADIAL

O-CRDB-F4

NOT APPLICABLE

SOURCE

Not Qualified

NOT SPECIFIED

NOT SPECIFIED

MMBF5484LT1 by Onsemi

MMBF5484LT1

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Feedback Capacitance (Crss): 1 pF; Maximum Operating Temperature: 150 Cel;

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

16 dB

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

.225 W

150 Cel

SILICON

-55 Cel

Tin/Lead (Sn/Pb)

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e0

30

235

1 pF

MMBFU310LT1G by Onsemi

MMBFU310LT1G

Onsemi

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;

N-CHANNEL

SINGLE

YES

.225 W

PLASTIC/EPOXY

AMPLIFIER

25 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

ULTRA HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Matte Tin (Sn) - annealed

DUAL

R-PDSO-G3

1

Not Qualified

TO-236AB

e3

40

260

2.5 pF

NE3210S01-T1 by Renesas Electronics

NE3210S01-T1

Renesas Electronics

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation Ambient: .165 W; Qualification: Not Qualified; Package Body Material: PLASTIC/EPOXY;

N-CHANNEL

SINGLE

YES

PLASTIC/EPOXY

AMPLIFIER

3 V

12 dB

GULL WING

UNSPECIFIED

DEPLETION MODE

1

KU BAND

.07 A

4

MICROWAVE

FET RF Small Signal

HETERO-JUNCTION

.165 W

125 Cel

SILICON

TIN LEAD

.015 A

UNSPECIFIED

X-PXMW-G4

SOURCE

Not Qualified

e0

30

230

ATF-551M4-TR1G by Agilent Technologies

ATF-551M4-TR1G

Agilent Technologies

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-609 Code: e3; Additional Features: LOW NOISE; Highest Frequency Band: X BAND;

N-CHANNEL

SINGLE

YES

CERAMIC, METAL-SEALED COFIRED

AMPLIFIER

5 V

15.5 dB

NO LEAD

RECTANGULAR

DEPLETION MODE

1

X BAND

4

CHIP CARRIER

HIGH ELECTRON MOBILITY

SILICON

TIN

.1 A

BOTTOM

R-CBCC-N4

1

Not Qualified

LOW NOISE

e3

BF513,215 by NXP Semiconductors

BF513,215

NXP Semiconductors

N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Field Effect Transistor Technology: JUNCTION; Moisture Sensitivity Level (MSL): 1;

N-CHANNEL

SINGLE

YES

.25 W

PLASTIC/EPOXY

AMPLIFIER

20 V

GULL WING

RECTANGULAR

DEPLETION MODE

1

VERY HIGH FREQUENCY BAND

3

SMALL OUTLINE

Other Transistors

JUNCTION

150 Cel

SILICON

Tin (Sn)

.03 A

DUAL

R-PDSO-G3

1

Not Qualified

LOW NOISE

e3

30

260

.4 pF