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PD84001

STMicroelectronics

PD84001 by STMicroelectronics

PD84001 by STMicroelectronics is an N-CHANNEL RF Small Signal FET with a min DS Breakdown Voltage of 18V. It is used as an amplifier in the ULTRA HIGH FREQUENCY BAND, with a max Drain Current of 1.5A and a Power Dissipation of 6W.

Median Price

$1.875

Lifecycle Status

Suppliers In-Stock

8

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Nova Conductors

Japan . 300 parts In-Stock

1+ parts

$1.875

100+ parts

-

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300

$1.875

-

-

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Chip Stock

USA . 13,758 parts In-Stock

1+ parts

-

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13,758

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Vyrian

USA . 6,363 parts In-Stock

1+ parts

-

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6,363

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-

-

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Digiode

USA . 2,238 parts In-Stock

1+ parts

-

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2,238

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-

-

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Anansix

USA . 975 parts In-Stock

1+ parts

-

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975

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Connector Distribution Corp

USA . 15 parts In-Stock

1+ parts

-

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15

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Right Parts Inc.

USA . 15 parts In-Stock

1+ parts

-

100+ parts

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1k+ parts

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15

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Sensible Micro Corp

USA . 1 parts In-Stock

1+ parts

-

100+ parts

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1

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Ampacity Inc.

Singapore . 1,476 parts In-Stock

1+ parts

$0.050

100+ parts

-

1k+ parts

-

10k+ parts

-

1,476

$0.050

-

-

-

IDEA Electronic Components Group

UK . 2,313 parts In-Stock

1+ parts

$1.349

100+ parts

-

1k+ parts

$1.214

10k+ parts

-

2,313

$1.349

-

$1.214

-

Advanced Electronics

New Zealand . 150 parts In-Stock

1+ parts

$1.390

100+ parts

$1.265

1k+ parts

$1.140

10k+ parts

-

150

$1.390

$1.265

$1.140

-

Continental Prestige Electronics

USA . 2,563 parts In-Stock

1+ parts

$1.875

100+ parts

-

1k+ parts

-

10k+ parts

$1.838

2,563

$1.875

-

-

$1.838

Argo Parts USA

USA . 1,949 parts In-Stock

1+ parts

$1.875

100+ parts

-

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1,949

$1.875

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Bastille Electronics

Australia . 22 parts In-Stock

1+ parts

$1.875

100+ parts

$1.781

1k+ parts

$1.692

10k+ parts

$1.669

22

$1.875

$1.781

$1.692

$1.669

MKK Technologies

India . 1,896 parts In-Stock

1+ parts

$2.536

100+ parts

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1,896

$2.536

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DigiPath Technology Company

USA . 1,896 parts In-Stock

1+ parts

$2.536

100+ parts

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1,896

$2.536

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AZTECH Wire

Italy . 784 parts In-Stock

1+ parts

$5.257

100+ parts

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784

$5.257

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Semicontronic

India . 973 parts In-Stock

1+ parts

$35.050

100+ parts

$34.174

1k+ parts

$33.998

10k+ parts

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973

$35.050

$34.174

$33.998

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RC Electronics

USA . 35,003 parts In-Stock

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35,003

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Perfect Parts

USA . 23,995 parts In-Stock

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23,995

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Kepictronics

USA . 15,000 parts In-Stock

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15,000

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Lixinc

USA . 13,055 parts In-Stock

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13,055

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Authorized Procurement Solutions

USA . 6,000 parts In-Stock

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6,000

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Parana Technologies

USA . 2,251 parts In-Stock

1+ parts

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100+ parts

$1.613

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2,251

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$1.613

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Corphita

USA . 629 parts In-Stock

1+ parts

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629

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Overview

Discover the PD84001 by STMicroelectronics, a top-quality RF Small Signal Field Effect Transistor (FET) that offers unparalleled performance in amplifier applications. With a minimum DS Breakdown Voltage of 18V and a maximum Drain Current of 1.5A, this N-CHANNEL transistor is designed to deliver exceptional power gain and operate in ultra-high frequency bands. Its small outline package and matte tin terminal finish enhance its durability and ease of installation. Trust STMicroelectronics, a renowned manufacturer known for its cutting-edge technology, to provide you with the perfect solution for your amplification needs. Upgrade your projects today with the PD84001 and experience the value, benefits, and advantages it brings to your applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This sturdy material ensures durability and protection for the transistor, making it a reliable choice for long-term use.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors are commonly used in amplifiers, offering good performance characteristics for this application.

Minimum DS Breakdown Voltage: 18 V

With a minimum breakdown voltage of 18V, this transistor can handle higher voltage levels, providing stability in operation.

Minimum Power Gain (Gp): 13 dB

A minimum power gain of 13 dB indicates that this transistor can amplify signals effectively, offering good performance in amplifier circuits.

Configuration: SINGLE

The single configuration simplifies the circuit design and makes it easier to integrate into various electronic devices.

Surface Mount: YES

Being surface mountable, this transistor can be easily mounted on circuit boards, saving space and facilitating automated manufacturing processes.

Maximum Drain Current (Abs) (ID): 1.5 A

With a maximum drain current of 1.5A, this transistor can handle high current loads, making it suitable for demanding applications.

Maximum Power Dissipation (Abs): 6 W

The high maximum power dissipation of 6W allows this transistor to handle power efficiently, contributing to its overall reliability.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this transistor can withstand high temperatures, making it suitable for a wide range of environments.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

Metal-oxide semiconductor technology offers good performance characteristics in terms of speed, power consumption, and noise immunity, making this transistor a reliable choice for various applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) PD84001 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from STMicroelectronics

Specs

Case Connection:

SOURCE

Configuration:

Minimum DS Breakdown Voltage:

18 V

Maximum Drain Current (Abs) (ID):

1.5 A

Maximum Drain Current (ID):

1.5 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-F4

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

ENHANCEMENT MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

6 W

Minimum Power Gain (Gp):

13 dB

Qualification:

Not Qualified

Sub-Category:

FET General Purpose Power

Surface Mount:

YES

Terminal Finish:

Matte Tin (Sn)

Terminal Form:

FLAT

Terminal Position:

DUAL

Maximum Time At Peak Reflow Temperature (s):

30

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

PD84001 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

PCN

Manufacturer Highlights

STMicroelectronics

STMicroelectronics is a global leader in the semiconductor manufacturing industry, with over 35 years of experience providing innovative and advanced technologies for customers around the world. Headquartered in Netherlands, STMicroelectronics has more than 51,323 employees worldwide and operates across 32 countries all over Europe, Asia-Pacific and the Americas. The company’s portfolio includes integrated circuits, discrete components, application-specific standard products, and computer chipsets. STMicroelectronics serves a wide range of industries such as automotive, consumer markets, healthcare and industrial applications.

Management team

President, CEO

Jean-Marc Chery

President, CFO, Finance, Purchasing,Enterprise Risk Management & Resilience

Lorenzo Grandi

President, Sales & Marketing

Jerome Roux

Manufacturer fab locations 33

Fab name Location Fab Initiation Wafer Capacity

Castelletto

Fabrication

Fab Initiation

1968

Italy

Castelletto

Wafer Capacity

1968

SGFAB AMK 6

Fabrication

Fab Initiation

2000

Singapore

Singapore

Wafer Capacity

29,000

2000

29,000

AG200

Fabrication

Fab Initiation

2000

Italy

Agrate Brianza

Wafer Capacity

14,000

2000

14,000

RST 8

Fabrication

Fab Initiation

2000

France

Rousset

Wafer Capacity

35,000

2000

35,000

Crolles 1

Fabrication

Fab Initiation

1993

France

Crolles

Wafer Capacity

30,000

1993

30,000

Crolles 2-ext. mod 5

Fabrication

Fab Initiation

-

France

Crolles

Wafer Capacity

-

Crolles 2-ext. mod 2

Fabrication

Fab Initiation

2022

France

Crolles

Wafer Capacity

2022

Crolles 2-ext. mod 3

Fabrication

Fab Initiation

2023

France

Crolles

Wafer Capacity

2023

Crolles 2

Fabrication

Fab Initiation

2004

France

Crolles

Wafer Capacity

28,000

2004

28,000

AG200

Fabrication

Fab Initiation

1985

Italy

Agrate Brianza

Wafer Capacity

14,000

1985

14,000

SiC Fab

Fabrication

Fab Initiation

2006

Sweden

Norrköping

Wafer Capacity

10,000

2006

10,000

Fab 3

Fabrication

Fab Initiation

2005

France

Tours

Wafer Capacity

2,000

2005

2,000

Fab 1 & Fab 2

Fabrication

Fab Initiation

1978

France

Tours

Wafer Capacity

55,000

1978

55,000

Fab 2

Fabrication

Fab Initiation

1997

Italy

Catania

Wafer Capacity

30,000

1997

30,000

SGFAB-AMK 6E

Fabrication

Fab Initiation

2003

Singapore

Singapore

Wafer Capacity

145,000

2003

145,000

SGFAB-AMJ 9

Fabrication

Fab Initiation

1984

Singapore

Singapore

Wafer Capacity

152,000

1984

152,000

AG300 (R3)

Fabrication

Fab Initiation

2022

Italy

Agrate Brianza

Wafer Capacity

2022

Fab 2

Fabrication

Fab Initiation

1980

Italy

Catania

Wafer Capacity

25,000

1980

25,000

AG200

Fabrication

Fab Initiation

1987

Italy

Agrate Brianza

Wafer Capacity

34,000

1987

34,000

AG300

Fabrication

Fab Initiation

2024

Italy

Agrate Brianza

Wafer Capacity

2024

Crolles 2-ext. mod 1

Fabrication

Fab Initiation

2020

France

Crolles

Wafer Capacity

2,000

2020

2,000

Fab 1 6-inch fab

Fabrication

Fab Initiation

2013

Italy

Catania

Wafer Capacity

11,000

2013

11,000

SiC 6-inch line

Fabrication

Fab Initiation

2021

Singapore

Singapore

Wafer Capacity

2021

Fab 1 6-inch fab

Fabrication

Fab Initiation

2020

Italy

Catania

Wafer Capacity

2,500

2020

2,500

200mm GaN

Fabrication

Fab Initiation

2021

France

Tours

Wafer Capacity

2,500

2021

2,500

Fab 2

Fabrication

Fab Initiation

2018

Italy

Catania

Wafer Capacity

14,000

2018

14,000

SGFAB-AMK 8

Fabrication

Fab Initiation

2001

Singapore

Singapore

Wafer Capacity

30,000

2001

30,000

Crolles 2- JV Fab

Fabrication

Fab Initiation

2024

France

Crolles

Wafer Capacity

2024

SGFAB-AMK 6

Fabrication

Fab Initiation

2016

Singapore

Singapore

Wafer Capacity

38,125

2016

38,125

SGFAB-AMK 2E

Fabrication

Fab Initiation

2010

Singapore

Singapore

Wafer Capacity

20,000

2010

20,000

Silicon Carbide A.B.

Fabrication

Fab Initiation

2021

Sweden

Norrköping

Wafer Capacity

2021

SiC wafer/EPI Fab

Fabrication

Fab Initiation

2023

Italy

Catania

Wafer Capacity

2023

SiC Device Fab

Fabrication

Fab Initiation

2025

Italy

Catania

Wafer Capacity

2025

Category top products 20

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