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BF990A-TAPE-7

NXP Semiconductors

BF990A-TAPE-7 by NXP Semiconductors

BF990A-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 18V, operates in dual gate depletion mode, and supports ultra-high frequency bands. Its compact surface mount design ensures efficient performance in various electronic devices.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

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Digiode

USA . 3,258 parts In-Stock

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Vyrian

USA . 1,538 parts In-Stock

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1,538

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Anansix

USA . 1,186 parts In-Stock

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One Stop Electronics

USA . 959 parts In-Stock

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$41.050

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959

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UNI Independent Distributors

Spain . 5,037 parts In-Stock

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Corphita

USA . 2,453 parts In-Stock

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Northwest PG Solutions

USA . 2,068 parts In-Stock

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Native Components

USA . 910 parts In-Stock

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910

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Overview

Unleash the power of innovation with the BF990A-TAPE-7 from NXP Semiconductors, a leader in high-quality electronic solutions. This advanced RF small signal FET is perfect for amplifying your projects, offering unparalleled performance in ultra-high frequency applications. Its robust design ensures reliability even in demanding environments, making it an ideal choice for telecommunications, audio technology, and more. Elevate your designs with the trusted excellence of NXP!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of plastic/epoxy ensures durability and protection, making the FET suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically offer higher electron mobility, enabling better performance in amplification applications.

Configuration: SINGLE WITH BUILT-IN DIODE

Having a built-in diode simplifies circuit design and increases reliability by reducing external components.

Transistor Application: AMPLIFIER

Designed for amplifier applications, this FET enhances signal amplification, making it ideal for RF applications.

Surface Mount: YES

Surface mount technology allows for compact designs and easy integration into modern electronic circuits.

Minimum DS Breakdown Voltage: 18 V

With an 18 V breakdown voltage, this FET ensures reliable operation in environments where voltage spikes may occur.

Package Shape: RECTANGULAR

The rectangular shape ensures efficient usage of PCB space and facilitates easy placement during assembly.

Terminal Form: GULL WING

Gull wing terminals provide excellent soldering characteristics, ensuring strong connections and reliability.

Operating Mode: DUAL GATE, DEPLETION MODE

Dual gate depletion mode allows for flexible control in amplifying applications, optimizing performance.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Operating in the ultra-high frequency range makes this FET suitable for advanced RF applications, including communication systems.

No. of Terminals: 4

With 4 terminals, the FET offers versatility in configuration, allowing for different circuit setups.

Package Style (Meter): SMALL OUTLINE

The small outline package style saves space, enabling the design of compact electronic circuits.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOS technology ensures high input impedance and low power consumption, vital for modern electronic applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C allows for reliable performance in high-temperature environments.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material, providing reliable performance and availability.

Maximum Drain Current (ID): 0.03 A

A maximum drain current of 30 mA provides adequate drive current for small signal applications.

Terminal Position: DUAL

Dual terminal positions facilitate multiple configurations, enhancing design flexibility.

Case Connection: SOURCE

Source connection allows for straightforward circuit integration and facilitates performance optimization.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF990A-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

18 V

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF990A-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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