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BF245ARLRE

Onsemi

BF245ARLRE by Onsemi

BF245ARLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features DEPLETION MODE operation and 0.1A ID. Package: PLASTIC/EPOXY, ROUND shape, THROUGH-HOLE terminals.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 2,378 parts In-Stock

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Digiode

USA . 1,894 parts In-Stock

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SupplyDigital Components

Austria . 3,496 parts In-Stock

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TANS Electronics

Latvia . 2,527 parts In-Stock

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Northwest PG Solutions

USA . 1,955 parts In-Stock

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Problanco Electronics

Mexico . 1,912 parts In-Stock

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Kulean Microsystems

USA . 1,041 parts In-Stock

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UHIMA Technologies

Türkiye . 851 parts In-Stock

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Native Components

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Corphita

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Corohmni

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Overview

Maximize your signal amplification with the BF245ARLRE RF Small Signal Field Effect Transistor by Onsemi. Known for their superior quality and innovation, Onsemi delivers top-notch performance for a variety of applications in the ultra-high frequency band. Whether you're looking to enhance your amplifier or boost your signal strength, this N-channel transistor offers unmatched value and benefits. Trust Onsemi to provide the cutting-edge technology you need for optimal results every time.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

This material provides durability and protection for the transistor, ensuring long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally have better performance and efficiency compared to P-channel transistors.

Configuration: SINGLE

Simplified setup and operation with only one transistor in the package.

Transistor Application: AMPLIFIER

Designed specifically for amplification tasks, ensuring optimal performance in audio or RF applications.

Minimum DS Breakdown Voltage: 30 V

High breakdown voltage allows for reliable operation in various voltage conditions.

Package Shape: ROUND

Compact and efficient design that can fit into tight spaces.

Terminal Form: THROUGH-HOLE

Easy to solder and install on PCBs for quick and secure connections.

Operating Mode: DEPLETION MODE

Provides better control over the flow of current, enhancing performance and efficiency.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Ideal for high-frequency applications such as radio communications or radar systems.

No. of Terminals: 3

Simple and straightforward pin configuration for easy integration into circuits.

Package Style (Meter): CYLINDRICAL

Easily identifiable package style for convenient handling and installation.

Field Effect Transistor Technology: JUNCTION

Junction technology offers high performance and reliability for RF signal processing.

Transistor Element Material: SILICON

Silicon transistors are known for their stability, low noise, and high frequency capabilities.

Terminal Finish: TIN LEAD

Tin lead finish ensures good conductivity and solderability for reliable connections.

Maximum Drain Current (ID): 0.1 A

Suitable for low-power amplification applications, providing optimal current handling capability.

Terminal Position: BOTTOM

Clear terminal positioning for easy installation and connection in circuits.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF245ARLRE attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF245ARLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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