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BF244ARLRP

Onsemi

BF244ARLRP by Onsemi

BF244ARLRP by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it features SINGLE configuration and DEPLETION MODE operation. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Digiode

USA . 2,294 parts In-Stock

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Vyrian

USA . 520 parts In-Stock

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Problanco Electronics

Mexico . 4,528 parts In-Stock

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Kulean Microsystems

USA . 4,129 parts In-Stock

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TANS Electronics

Latvia . 2,249 parts In-Stock

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Northwest PG Solutions

USA . 2,205 parts In-Stock

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Corphita

USA . 1,034 parts In-Stock

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SupplyDigital Components

Austria . 864 parts In-Stock

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UHIMA Technologies

Türkiye . 460 parts In-Stock

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Native Components

USA . 390 parts In-Stock

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Corohmni

South Africa . 273 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the BF244ARLRP by Onsemi. This RF Small Signal Field Effect Transistor offers unparalleled quality and reliability, backed by the trusted reputation of its manufacturer. Perfect for amplifier applications in the ultra-high frequency band, this N-channel transistor delivers exceptional performance and efficiency. Experience the value and benefits of superior design and engineering with the BF244ARLRP, setting a new standard for excellence in the industry.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Lightweight and durable material, ideal for portable devices.

Polarity or Channel Type: N-CHANNEL

Efficient for amplifying negative signals.

Configuration: SINGLE

Simplified design and easy to integrate into circuits.

Transistor Application: AMPLIFIER

Specifically designed for amplifying signals, ensuring high performance.

Minimum DS Breakdown Voltage: 30 V

Can handle higher voltage levels, providing reliability in circuits.

Package Shape: ROUND

Compact size and efficient use of space in circuit boards.

Terminal Form: THROUGH-HOLE

Easy to solder onto circuit boards for secure connections.

Operating Mode: DEPLETION MODE

Efficient operation in amplifying signals with minimal power loss.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Suitable for applications that require fast signal processing at high frequencies.

No. of Terminals: 3

Simple interface with other components in the circuit.

Package Style (Meter): CYLINDRICAL

Sleek design for modern electronic devices.

Field Effect Transistor Technology: JUNCTION

Reliable and efficient technology for signal amplification.

Transistor Element Material: SILICON

Highly stable material for consistent performance over time.

Terminal Finish: TIN LEAD

Good conductivity and durability for long-lasting connections.

Maximum Drain Current (ID): 0.1 A

Can handle moderate current levels for various applications.

Terminal Position: BOTTOM

Easy access and connection to other components in the circuit.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF244ARLRP attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.1 A

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF244ARLRP Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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