Loading...

BF512-TAPE-7

NXP Semiconductors

BF512-TAPE-7 by NXP Semiconductors

BF512-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This surface-mount transistor ensures reliable performance up to 150 °C.

Median Price

-

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Digiode

USA . 4,529 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

4,529

-

-

-

-

Vyrian

USA . 3,328 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,328

-

-

-

-

Anansix

USA . 1,657 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,657

-

-

-

-

Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

One Stop Electronics

USA . 958 parts In-Stock

1+ parts

$19.050

100+ parts

-

1k+ parts

-

10k+ parts

-

958

$19.050

-

-

-

Corphita

USA . 3,332 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

3,332

-

-

-

-

Northwest PG Solutions

USA . 1,675 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,675

-

-

-

-

UNI Independent Distributors

Spain . 1,312 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

1,312

-

-

-

-

Native Components

USA . 33 parts In-Stock

1+ parts

-

100+ parts

-

1k+ parts

-

10k+ parts

-

33

-

-

-

-

Overview

Unlock your project’s potential with the BF512-TAPE-7 from NXP Semiconductors, a leader in innovative technology. This high-quality N-channel RF Small Signal FET delivers exceptional performance as an amplifier, optimizing signal integrity for various applications. Its compact design ensures seamless integration into your devices while offering superior reliability at high frequencies. Experience enhanced efficiency and robust functionality that elevate your electronic designs to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The use of durable plastic/epoxy material enhances reliability and thermal performance, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

N-channel FETs are generally more efficient and provide better performance in terms of on-resistance, which is advantageous in amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, offering convenience in both prototyping and final product applications.

Transistor Application: AMPLIFIER

Designed specifically for amplification purposes, ensuring optimal performance in boosting signal strength.

Surface Mount: YES

Surface mount technology allows for compact design and automated assembly, increasing production efficiency and reducing the footprint.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20V provides a robust performance, allowing safe operation in various electronic devices without risk of failure.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space utilization on PCBs and facilitates easier layout design.

Terminal Form: GULL WING

Gull wing terminals allow for good solder joint visibility and ease of handling during assembly, enhancing manufacturing reliability.

Operating Mode: DEPLETION MODE

Depletion-mode FETs enable enhanced control over current flow, making them ideal for low-power applications and precise switching.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

The capability to operate in very high frequency bands ensures excellent performance in RF applications, including communications and broadcasting.

No. of Terminals: 3

Three terminals provide adequate connectivity while keeping the design manageable and straightforward, suitable for various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style is ideal for applications requiring compactness, fitting well in modern electronic devices with space constraints.

Field Effect Transistor Technology: JUNCTION

Junction technology enhances the transistor’s switching speeds and reduces power consumption, making it a popular choice in low-power applications.

Maximum Operating Temperature: 150 °C

A maximum operating temperature of 150 °C provides thermal stability, allowing the device to function reliably in high-temperature environments.

Transistor Element Material: SILICON

Silicon as the element material provides excellent electrical properties and stability, ensuring high performance and longevity of the device.

Maximum Drain Current (ID): 0.03 A

A maximum drain current of 30 mA balances power handling and efficiency, suitable for a variety of low-power applications.

Terminal Position: DUAL

Dual terminal positioning facilitates versatile circuit integration and enhances electrical performance by minimizing parasitic effects.

Maximum Feedback Capacitance (Crss): 0.4 pF

Low feedback capacitance allows for high-frequency operation without significant loss of signal integrity, making it suitable for RF applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF512-TAPE-7 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.4 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF512-TAPE-7 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

previous next
The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

Category top products 20

Authentic purchasing experiences

Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.

Similar products 20