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BF510-TAPE-13

NXP Semiconductors

BF510-TAPE-13 by NXP Semiconductors

BF510-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 1,332 parts In-Stock

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1,332

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Anansix

USA . 1,103 parts In-Stock

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Digiode

USA . 816 parts In-Stock

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816

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One Stop Electronics

USA . 579 parts In-Stock

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$51.050

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579

$51.050

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Native Components

USA . 848 parts In-Stock

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$56.390

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$54.134

848

$56.390

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$54.134

Northwest PG Solutions

USA . 117 parts In-Stock

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$62.029

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117

$62.029

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UNI Independent Distributors

Spain . 6,084 parts In-Stock

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Corphita

USA . 3,155 parts In-Stock

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Overview

Unlock superior performance with the BF510-TAPE-13 from NXP Semiconductors, a trusted leader in innovative semiconductor solutions. This high-quality N-channel RF FET is designed for amplifying signals with remarkable efficiency, even in challenging environments. Its compact surface-mount design ensures seamless integration into your projects, delivering reliable results for audio, communications, and beyond. Elevate your applications with unmatched precision and durability—experience the NXP advantage today!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy construction provides excellent durability and protection, making the transistor reliable in various environments.

Polarity or Channel Type: N-CHANNEL

N-channel transistors generally offer higher electron mobility, resulting in better performance and efficiency, especially for amplifier applications.

Configuration: SINGLE

Single configuration simplifies circuit design, reducing space and improving layout when integrating into systems.

Transistor Application: AMPLIFIER

Designed for amplification, this FET is ideal for various audio and RF applications, enhancing signal strength effectively.

Surface Mount: YES

Surface mount technology allows for automated assembly processes, leading to compact designs and reduced production costs.

Minimum DS Breakdown Voltage: 20 V

A minimum breakdown voltage of 20V ensures safe and reliable operation in many electronic applications, protecting against over-voltage conditions.

Package Shape: RECTANGULAR

The rectangular package shape optimizes space on PCBs, allowing for more efficient layout and integration into compact electronic devices.

Terminal Form: GULL WING

The gull wing terminal design offers easy soldering and improves connection reliability, making it user-friendly for PCB assembly.

Operating Mode: DEPLETION MODE

Depletion mode operation provides flexibility in circuit applications and allows for lower power consumption in certain configurations.

Highest Frequency Band: VERY HIGH FREQUENCY BAND

Capable of operating in very high frequency bands, this FET is suitable for advanced RF and communication applications, offering excellent speed performance.

No. of Terminals: 3

With three terminals, the design is simplified, enhancing versatility and ease of integration into various circuit configurations.

Package Style (Meter): SMALL OUTLINE

The small outline package style allows for compact designs, which is important in modern electronics where space is at a premium.

Field Effect Transistor Technology: JUNCTION

The junction FET technology facilitates fast switching speeds and efficient operation, essential for high-performance applications.

Maximum Operating Temperature: 150 °C

With a maximum operating temperature of 150 °C, this FET can sustain high thermal environments, making it suitable for demanding applications.

Transistor Element Material: SILICON

Silicon as the transistor element material ensures good thermal stability and reliability, common in various electronic components.

Maximum Drain Current (ID): 0.03 A

A maximum drain current of 0.03 A allows for efficient power distribution across circuits, maintaining performance without overheating.

Terminal Position: DUAL

The dual terminal positioning improves layout options on a PCB, enhancing design flexibility and ease of circuit integration.

Maximum Feedback Capacitance (Crss): 0.4 pF

Low feedback capacitance of 0.4 pF contributes to high-frequency performance, reducing signal degradation in RF applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF510-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Configuration:

Minimum DS Breakdown Voltage:

20 V

Maximum Drain Current (ID):

.03 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

.4 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G3

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF510-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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