Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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BF510-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a 20V min DS breakdown voltage, operates in depletion mode, and supports very high frequency bands. This compact surface mount transistor ensures reliable performance up to 150 °C.
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The plastic/epoxy construction provides excellent durability and protection, making the transistor reliable in various environments.
N-channel transistors generally offer higher electron mobility, resulting in better performance and efficiency, especially for amplifier applications.
Single configuration simplifies circuit design, reducing space and improving layout when integrating into systems.
Designed for amplification, this FET is ideal for various audio and RF applications, enhancing signal strength effectively.
Surface mount technology allows for automated assembly processes, leading to compact designs and reduced production costs.
A minimum breakdown voltage of 20V ensures safe and reliable operation in many electronic applications, protecting against over-voltage conditions.
The rectangular package shape optimizes space on PCBs, allowing for more efficient layout and integration into compact electronic devices.
The gull wing terminal design offers easy soldering and improves connection reliability, making it user-friendly for PCB assembly.
Depletion mode operation provides flexibility in circuit applications and allows for lower power consumption in certain configurations.
Capable of operating in very high frequency bands, this FET is suitable for advanced RF and communication applications, offering excellent speed performance.
With three terminals, the design is simplified, enhancing versatility and ease of integration into various circuit configurations.
The small outline package style allows for compact designs, which is important in modern electronics where space is at a premium.
The junction FET technology facilitates fast switching speeds and efficient operation, essential for high-performance applications.
With a maximum operating temperature of 150 °C, this FET can sustain high thermal environments, making it suitable for demanding applications.
Silicon as the transistor element material ensures good thermal stability and reliability, common in various electronic components.
A maximum drain current of 0.03 A allows for efficient power distribution across circuits, maintaining performance without overheating.
The dual terminal positioning improves layout options on a PCB, enhancing design flexibility and ease of circuit integration.
Low feedback capacitance of 0.4 pF contributes to high-frequency performance, reducing signal degradation in RF applications.
RF Small Signal Field Effect Transistors (FET) BF510-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors
Configuration:
Minimum DS Breakdown Voltage:
Maximum Drain Current (ID):
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JESD-30 Code:
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Polarity or Channel Type:
Qualification:
Surface Mount:
Terminal Form:
Terminal Position:
Transistor Application:
Transistor Element Material:
BF510-TAPE-13 Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.
Executive Director, President, CEO
Kurt Sievers
Executive VP, CFO
Bill Betz
Executive VP, Chief Sales Officer
Ron Martino
ICN8
Fabrication
Fab Initiation
1996
Netherlands
Nijmegen
Wafer Capacity
55,000
ATMC (Austin Tech & Mfg Center)
1995
USA
Austin
30,000
N/A
1989
Germany
Boeblingen
CHD
1993
Chandler
OHTC
1991
24,000
New Expansion Fab
2026
ECHO
2020
10,000
BAV99
Itt Semiconductor
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;
M24308/2-1F
Positronic Industries
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mating Info.: MULTIPLE MATING PARTS AVAILABLE; Additional Features: STANDARD: MIL-DTL-24308, POLARIZED; Body or Shell Style: RECEPTACLE;
1N4148
Changzhou Galaxy Century Microelectronics
RECTIFIER DIODE; Surface Mount: NO; Config: SINGLE; Peak Reflow Temperature (C): 260; No. of Phases: 1; Diode Element Material: SILICON;
BAV99+
Multicomp Pro
BAV99+ by Multicomp Pro is a series connected diode with 0.2A output current and 75V peak reverse voltage. Its 0.006us reverse recovery time makes it ideal for high-speed applications. This small outline rectifier diode is designed for surface mount installation in electronic circuits.
2N2222A
Fairchild Semiconductor
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
SMBJ18CA
Goodwork Semiconductor
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
C1005X7R1E103K050BB
TDK
The TDK C1005X7R1E103K050BB is a ceramic capacitor with capacitance of 0.01uF and rated DC voltage of 25V. It features X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications requiring compact size and stable performance in various electronic circuits.
Esterline Technologies
D SUBMINIATURE CONNECTOR; Option: GENERAL PURPOSE; Contact Gender: FEMALE; Mounting Option-1: HOLE .115-.125; Mounting Type: CABLE AND PANEL; Mating Contact Finish: NOT SPECIFIED;
LM317T
Sgs-ates Componenti Electronici S P A
Other Regulators; No. of Terminals: 3; JESD-609 Code: e0; Terminal Position: SINGLE; Adjustability: ADJUSTABLE; Maximum Load Regulation (%): 1.5 %;
NE555/D
General Electric Solid State
Analog Waveform Generation Functions; Temperature Grade: COMMERCIAL; Maximum Operating Temperature: 70 Cel; Technology: BIPOLAR; Package Equivalence Code: DIE OR CHIP; Qualification: Not Qualified;
LM358MX
Onsemi
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: GULL WING; No. of Terminals: 8; Package Code: SOP; Package Shape: RECTANGULAR;
RECTIFIER DIODE; Terminal Position: AXIAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;
Daco Semiconductor
M39029/56351
Souriau
CONNECTOR ACCESSORY; MIL Conformity: YES; Contact Gender: FEMALE; Insertion Tools: M81969/14-10; Tool Settings: M22520/2-10; DIN Conformity: NO;
NE555D
NXP Semiconductors
SQUARE; Temperature Grade: COMMERCIAL; No. of Terminals: 8; Package Code: LSOP; Package Shape: RECTANGULAR; Surface Mount: YES;
1N4148WS
Hitano Enterprise
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Sangdest Microelectronics (Nanjing)
DP83848IVVX/NOPB
National Semiconductor
ETHERNET TRANSCEIVER; Temperature Grade: INDUSTRIAL; Terminal Form: GULL WING; No. of Terminals: 48; Package Code: QFP; Package Shape: SQUARE;
87832-1420
Molex
87832-1420 by Molex is a 14-contact board connector with 0.079" pitch, suitable for commercial applications. It features matte tin over nickel finish, glass-filled polyamide insulator, and polarization key for easy assembly. Withstanding voltage of 1400VAC and operating temperature range from -55 to 105°C make it reliable for various electronic devices.
M39029/58-360
Carlisle Interconnect Technologies
GENERAL CONN ACCESSORY; Associated Military - Specifications: MIL-C-55302/69, MIL-C-38999; Maximum Operating Temperature: 200 Cel; MIL-Connector Accessory: CONTACT; Terminal Type: CRIMP; MIL Conformity: YES;
MMBF4416
MMBF4416 by Onsemi is an N-CHANNEL RF FET with 18 dB Gp, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a very high frequency band and 0.225 W power dissipation. With a small outline package style and tin terminal finish, it has 3 terminals in gull wing shape.
BF904WR-T
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Feedback Capacitance (Crss): .035 pF; Case Connection: SOURCE;
FLC057WG
Fujitsu Semiconductor America
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; Terminal Form: FLAT; Package Shape: RECTANGULAR; JESD-30 Code: R-CDFM-F2;
STAC9200
STMicroelectronics
RF Small Signal Field-Effect Transistors; Maximum Time At Peak Reflow Temperature (s): NOT SPECIFIED; Peak Reflow Temperature (C): NOT SPECIFIED;
934058936115
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; Maximum Drain Current (ID): .03 A; Minimum DS Breakdown Voltage: 6 V;
MMBFJ211
MMBFJ211 by Onsemi is an N-CHANNEL RF FET with a PLASTIC/EPOXY package. Operating in DEPLETION MODE, it's ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.225 W and operating temperature of 150°C, this transistor offers high performance in a SMALL OUTLINE package.
BF246B
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Package Shape: ROUND; Operating Mode: DEPLETION MODE; No. of Terminals: 3;
BF1211,215
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .18 W; Terminal Finish: TIN; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BF1204,115
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Minimum DS Breakdown Voltage: 10 V; Minimum Power Gain (Gp): 21 dB;
2N4221
Texas Instruments
2N4221 by Texas Instruments is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it operates in DEPLETION MODE with 0.3W Power Dissipation and 200°C Max Temp. Features include 4 terminals, JUNCTION tech, and 2pF Feedback Capacitance.
933754970215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL; Moisture Sensitivity Level (MSL): 1;
BLF888
N-CHANNEL; Configuration: COMMON SOURCE, 2 ELEMENTS; Surface Mount: YES; Qualification: Not Qualified; Minimum DS Breakdown Voltage: 104 V; Peak Reflow Temperature (C): 260;
2N5952/D74Z
2N5952/D74Z by National Semiconductor is a N-CHANNEL RF FET with DEPLETION MODE operation. It has 3 terminals, SILICON element, and 2 pF feedback capacitance. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to its JUNCTION technology and THROUGH-HOLE package style.
BF245ARL1
BF245ARL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF990A-TAPE-7
BF990A-TAPE-7 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 18V, operates in dual gate depletion mode, and supports ultra-high frequency bands. Its compact surface mount design ensures efficient performance in various electronic devices.
2N5484-AMMO
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 150 Cel; Terminal Position: BOTTOM;
934050280115
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; Maximum Drain Current (ID): .03 A; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MMBF5484LT3
MMBF5484LT3 by Onsemi is an N-CHANNEL RF FET with DEPLETION MODE. It has a max power dissipation of 0.225W and operates b/w -55 to 150 °C. Ideal for AMPLIFIER applications, this transistor features GULL WING terminals in a SMALL OUTLINE package.
BLM7G1822S-40PB
RF Small Signal Field-Effect Transistors;
934055823135
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Minimum DS Breakdown Voltage: 7 V; Maximum Feedback Capacitance (Crss): .05 pF; Package Style (Meter): SMALL OUTLINE;
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BF511,215
BF511,215 by NXP Semiconductors is an N-CHANNEL RF FET with a DEPLETION MODE. It operates in the VERY HIGH FREQUENCY BAND and has a max power dissipation of 0.25 W. Ideal for AMPLIFIER applications due to its small outline package style and GULL WING terminal form.
BF510,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Qualification: Not Qualified; Terminal Finish: Tin (Sn);
BF512,215
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Minimum DS Breakdown Voltage: 20 V; Terminal Position: DUAL;
BF512-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Maximum Drain Current (ID): .03 A; Maximum Operating Temperature: 150 Cel;
BF512
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Highest Frequency Band: VERY HIGH FREQUENCY BAND; Maximum Drain Current (ID): .03 A;
BF511
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Transistor Application: AMPLIFIER; Package Body Material: PLASTIC/EPOXY;
BF512-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Feedback Capacitance (Crss): .4 pF; Package Shape: RECTANGULAR; Transistor Application: AMPLIFIER;
BF510-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Transistor Element Material: SILICON; No. of Elements: 1; Maximum Operating Temperature: 150 Cel;
BF511-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
BF511-TAPE-13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Operating Mode: DEPLETION MODE; Field Effect Transistor Technology: JUNCTION; Maximum Feedback Capacitance (Crss): .4 pF;
BF510T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
BF511-TAPE-7
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Drain Current (ID): .03 A; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
BF511TRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Package Body Material: PLASTIC/EPOXY; Operating Mode: DEPLETION MODE; Transistor Application: AMPLIFIER;
BF510TRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Field Effect Transistor Technology: JUNCTION; Terminal Finish: TIN;
BF511T/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Transistor Element Material: SILICON;
BF510
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .25 W; Terminal Position: DUAL; Highest Frequency Band: VERY HIGH FREQUENCY BAND;
BF510-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; No. of Terminals: 3; No. of Elements: 1;
BF510TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Minimum DS Breakdown Voltage: 20 V; Maximum Drain Current (ID): .03 A; Terminal Position: DUAL;
BF511TRL
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Terminals: 3; Transistor Element Material: SILICON; JESD-609 Code: e3;
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