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BF908R-TAPE-13

NXP Semiconductors

BF908R-TAPE-13 by NXP Semiconductors

BF908R-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a max DS breakdown voltage of 12V, operates in dual gate depletion mode, and supports ultra-high frequency bands. Its compact surface mount design ensures efficient performance in various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Vyrian

USA . 4,014 parts In-Stock

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4,014

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Digiode

USA . 1,000 parts In-Stock

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1,000

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Anansix

USA . 199 parts In-Stock

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199

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Distributors (Availability)

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Native Components

USA . 691 parts In-Stock

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$0.359

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$0.345

691

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$0.345

Northwest PG Solutions

USA . 207 parts In-Stock

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$0.395

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$0.349

207

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$0.349

One Stop Electronics

USA . 314 parts In-Stock

1+ parts

$53.050

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314

$53.050

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UNI Independent Distributors

Spain . 3,825 parts In-Stock

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3,825

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Corphita

USA . 2,900 parts In-Stock

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2,900

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Overview

Unlock unparalleled performance with the BF908R-TAPE-13 from NXP Semiconductors, a leader in semiconductor innovation. This high-quality RF small signal FET is designed for superior amplification in ultra-high frequency applications. Its compact, surface-mount design ensures easy integration into your projects while delivering reliability and efficiency. Experience enhanced signal integrity and robust functionality that only NXP can provide—perfect for advancing your next electronic endeavor!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material ensures lightweight construction and protection against environmental factors, making it suitable for various applications.

Polarity or Channel Type: N-CHANNEL

As an N-channel FET, it provides higher efficiency and better performance in common amplifier configurations.

Configuration: SINGLE WITH BUILT-IN DIODE

The built-in diode enhances circuit protection and simplifies design by reducing external components.

Transistor Application: AMPLIFIER

Designed specifically for amplification, it is ideal for high-frequency signal processing and audio applications.

Surface Mount: YES

Surface mount technology allows for compact PCB layouts and enables automated assembly processes, facilitating efficient manufacturing.

Minimum DS Breakdown Voltage: 12 V

A minimum breakdown voltage of 12V ensures robust performance in a variety of circuit environments, providing reliability during operation.

Package Shape: RECTANGULAR

The rectangular shape aids in efficient space management on PCBs, making it easier to integrate into complex designs.

Terminal Form: GULL WING

Gull wing terminals facilitate simple soldering and rework, enhancing the reliability of connections on the board.

Operating Mode: DUAL GATE, DEPLETION MODE

This operating mode offers enhanced control over switching characteristics, allowing for precise signal modulation and better linearity.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Being capable of operating in the ultra high frequency band makes it suitable for advanced communication applications.

No. of Terminals: 4

The 4-terminal configuration simplifies connections while providing the necessary functionality for effective circuit design.

Package Style (Meter): SMALL OUTLINE

The small outline package style reduces the overall footprint on the PCB, allowing for more compact electronic devices.

Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR

MOSFET technology ensures high efficiency and low power dissipation, which is key for modern low-power applications.

Maximum Operating Temperature: 150 °C

Operating effectively at up to 150 °C ensures reliability and performance in high-temperature environments.

Transistor Element Material: SILICON

Silicon is a widely used semiconductor material, providing excellent electrical characteristics and thermal stability.

Maximum Drain Current (ID): 0.04 A

The ability to handle up to 40 mA allows for sufficient current flow in many low-power signal applications.

Terminal Position: DUAL

Dual terminal positioning enhances flexibility in circuit design, accommodating various layout options.

Case Connection: SOURCE

Direct source connection provides straightforward integration with existing circuit configurations.

Maximum Feedback Capacitance (Crss): 0.045 pF

A low feedback capacitance ensures faster switching times and minimizes signal distortion, ideal for high-speed applications.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF908R-TAPE-13 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from NXP Semiconductors

Specs

Additional Features:

LOW NOISE

Case Connection:

SOURCE

Minimum DS Breakdown Voltage:

12 V

Maximum Drain Current (ID):

.04 A

Field Effect Transistor Technology:

METAL-OXIDE SEMICONDUCTOR

Maximum Feedback Capacitance (Crss):

.045 pF

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JESD-30 Code:

R-PDSO-G4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DUAL GATE, DEPLETION MODE

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

RECTANGULAR

Package Style (Meter):

SMALL OUTLINE

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

YES

Terminal Form:

GULL WING

Terminal Position:

DUAL

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

BF908R-TAPE-13 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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