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BF256ARLRE

Onsemi

BF256ARLRE by Onsemi

BF256ARLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring a SINGLE configuration, such as RF amplifiers and oscillators.

Median Price

-

Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 1,610 parts In-Stock

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1,610

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Digiode

USA . 373 parts In-Stock

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373

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Distributors (Availability)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Native Components

USA . 899 parts In-Stock

1+ parts

$0.151

100+ parts

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$0.145

899

$0.151

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$0.145

Northwest PG Solutions

USA . 209 parts In-Stock

1+ parts

$0.166

100+ parts

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$0.146

209

$0.166

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$0.146

Kulean Microsystems

USA . 6,291 parts In-Stock

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6,291

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Problanco Electronics

Mexico . 5,995 parts In-Stock

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5,995

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TANS Electronics

Latvia . 4,619 parts In-Stock

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4,619

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SupplyDigital Components

Austria . 1,729 parts In-Stock

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1,729

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Corphita

USA . 1,497 parts In-Stock

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1,497

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UHIMA Technologies

Türkiye . 454 parts In-Stock

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454

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Corohmni

South Africa . 65 parts In-Stock

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65

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Overview

Experience the superior performance of the BF256ARLRE RF Small Signal Field Effect Transistor by Onsemi. With its cutting-edge technology and reliable construction, this N-CHANNEL transistor offers unparalleled quality and efficiency in ultra high frequency applications. The plastic/epoxy package ensures durability while the depletion mode operation provides seamless functionality. Trust Onsemi's expertise to deliver a product that exceeds expectations, providing customers with unbeatable value and unmatched benefits. Elevate your projects with the BF256ARLRE and unlock endless possibilities in the world of RF electronics.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Plastic/Epoxy material provides good insulation and protection for the transistor, ensuring reliability and durability.

Polarity or Channel Type: N-CHANNEL

N-Channel FETs typically have higher electron mobility and superior performance compared to P-Channel FETs, making them a good choice for various applications.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30V, this FET can handle higher voltages without breakdown, making it suitable for applications where higher voltage operation is required.

Terminal Form: THROUGH-HOLE

Through-hole terminals provide a secure and reliable connection with the circuit board, ensuring stability and ease of soldering during assembly.

Operating Mode: DEPLETION MODE

Depletion mode FETs can be easily controlled by applying a negative voltage to the gate terminal, allowing for simple circuit design and operation.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

With operation in the ultra-high-frequency band, this FET is suitable for high-speed and high-frequency applications such as RF amplifiers and mixers.

No. of Terminals: 3

The three-terminal configuration allows for easy integration into circuits and provides flexibility in circuit design.

Package Style (Meter): CYLINDRICAL

The cylindrical package style is compact and space-saving, making it suitable for applications where size constraints are a concern.

Field Effect Transistor Technology: JUNCTION

Junction FET technology offers high input impedance, low feedback capacitance, and excellent linearity, making it ideal for high-frequency applications.

Transistor Element Material: SILICON

Silicon-based transistors offer high performance, low noise, and good thermal stability, making them a popular choice for a wide range of electronic applications.

Terminal Finish: TIN LEAD

Tin-lead terminal finish provides good solderability and conductivity, ensuring a reliable electrical connection with the circuit board.

Terminal Position: BOTTOM

Bottom terminal position allows for easy mounting and connection to the circuit board, simplifying assembly and ensuring proper alignment.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF256ARLRE attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

BF256ARLRE Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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