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BF256ARL1

Onsemi

BF256ARL1 by Onsemi

BF256ARL1 by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Operating in DEPLETION MODE, it offers ULTRA HIGH FREQUENCY performance. Ideal for applications requiring high-frequency signal amplification in a THROUGH-HOLE package.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

Distributors (In-Stock)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Vyrian

USA . 2,373 parts In-Stock

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Digiode

USA . 1,305 parts In-Stock

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1,305

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Distributors (Availability)

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Native Components

USA . 656 parts In-Stock

1+ parts

$0.102

100+ parts

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$0.098

656

$0.102

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$0.098

Northwest PG Solutions

USA . 1,877 parts In-Stock

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$0.112

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-

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$0.099

1,877

$0.112

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$0.099

SupplyDigital Components

Austria . 6,658 parts In-Stock

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6,658

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Kulean Microsystems

USA . 5,875 parts In-Stock

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5,875

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Problanco Electronics

Mexico . 4,103 parts In-Stock

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4,103

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TANS Electronics

Latvia . 1,235 parts In-Stock

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1,235

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UHIMA Technologies

Türkiye . 767 parts In-Stock

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767

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Corphita

USA . 424 parts In-Stock

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Corohmni

South Africa . 235 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the BF256ARL1 by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality RF Small Signal Field Effect Transistors that guarantee high performance and reliability. Ideal for applications in the ultra-high-frequency band, this N-channel transistor offers unmatched value and benefits to customers. Say goodbye to compromise and hello to seamless integration with the BF256ARL1. Experience innovation like never before.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides good protection for the components inside, ensuring durability and longevity.

Polarity or Channel Type: N-CHANNEL

Offers efficient signal amplification and low power consumption, ideal for various electronic applications.

Configuration: SINGLE

Simplifies circuit design and reduces complexity, making it easier to integrate into different systems.

Minimum DS Breakdown Voltage: 30 V

Ensures reliable performance and safety by providing a sufficient voltage threshold for operation.

Package Shape: ROUND

Facilitates easy mounting and installation in various devices and equipment.

Terminal Form: THROUGH-HOLE

Enables secure connection to the circuit board, enhancing stability and signal transmission.

Operating Mode: DEPLETION MODE

Allows for precise control over the transistor's behavior, enhancing performance in specific applications.

Highest Frequency Band: ULTRA HIGH FREQUENCY BAND

Enables high-speed signal processing and communication, making it suitable for advanced electronic systems.

No. of Terminals: 3

Offers flexibility in circuit design and connectivity options for different usage scenarios.

Package Style (Meter): CYLINDRICAL

Provides a compact and space-saving form factor for efficient integration in tight spaces or dense layouts.

Field Effect Transistor Technology: JUNCTION

Delivers high performance and reliability for signal amplification and switching applications.

Transistor Element Material: SILICON

Ensures high thermal stability and efficient signal handling, improving overall product quality and longevity.

Terminal Finish: TIN LEAD

Enhances solderability and conductivity for secure connections, contributing to stable performance in various conditions.

Terminal Position: BOTTOM

Facilitates easier board layout and assembly, making it more convenient for integration in different systems.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) BF256ARL1 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Configuration:

Minimum DS Breakdown Voltage:

30 V

Field Effect Transistor Technology:

JUNCTION

Highest Frequency Band:

ULTRA HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T3

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

3

Operating Mode:

DEPLETION MODE

Package Body Material:

PLASTIC/EPOXY

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Polarity or Channel Type:

Qualification:

Not Qualified

Surface Mount:

NO

Terminal Finish:

TIN LEAD

Terminal Form:

THROUGH-HOLE

Terminal Position:

BOTTOM

Transistor Element Material:

SILICON

Trade Compliance

BF256ARL1 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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