Active filters amplify desired signals while rejecting unwanted frequencies, and can be tailored to meet application-specific requirements in electronics.
Amplifiers boost signal strength, match impedance levels, and are essential in many circuit systems, including audio, broadcasting, and telecommunications.
Batteries store and provide electrical energy, come in various types and sizes for multiple uses, rechargeable or single-use.
Capacitors store electrical charge with metallic plates and a dielectric; types vary and can be combined for specific circuit characteristics.
Chip carriers and sockets provide an interface between components and PCBs, enabling easy replacement or upgrading without soldering.
Circuit protection devices prevent damage from overcurrent flow, including fuses, breakers, surge protectors, and voltage regulators.
Connector accessories and support devices aid connector function and longevity, including backshells, grips, clamps, and ties; must be compatible with connector type.
Connectors join electronic circuits to transfer signals and power, come in various sizes and shapes, and include support accessories.
Converters transform DC input to another voltage level, essential in electronic systems, renewable energy, and automotive electronics.
Crystals and resonators generate and stabilize frequency signals via piezoelectricity. They are used in timing, frequency control, and filters. Crystals are quartz and resonators are ceramic with a built-in capacitor.
Semiconductor diodes control current flow in one direction (uni-directionality) via low resistance. Useful for rectification, voltage regulation, detection, and digital logic.
Discover essential electronic components for your devices, including CPU accelerators, system cache controllers, computer processors, motherboards, and graphics computing systems. Enhance device performance and connectivity with reliable components engineered for seamless integration and optimal functionality.
Fiber optics use light pulses to transmit data over long distances. They have superior bandwidth capacity, low signal attenuation, and secure physical properties. They are essential in telecommunications networks today.
Filters enhance signal processing by selectively passing desired frequencies while suppressing unwanted ones. Filters can be passive (using capacitors, resistors, and inductors) or active (using transistors or amplifiers).
Flash devices are non-volatile storage solutions that offer fast read and write speeds, making them ideal for applications requiring high-speed data transfer. These devices utilize flash memory technology, providing reliable storage for data-intensive tasks such as gaming, multimedia, and enterprise-level applications.
General purpose ICs consist of multiple individual circuits or components (e.g., logic gates, amplifiers, oscillators, etc.) that are combined onto a single integrated circuit chip for a smaller physical footprint.
I/O and storage controllers are crucial components in computer systems, managing input/output operations and storage devices. These controllers facilitate efficient data transfer between peripherals, storage drives, and the central processing unit (CPU), enhancing system performance and enabling seamless connectivity.
Inductors store energy in magnetic fields, oppose sudden changes in current flow and prevent electrical surges. Common inductor applications include power supplies, signal filters, and oscillators.
Interface ICs allow efficient device connectivity with high-speed data transfer and low power consumption.They can be ASIC or FPGA types, and may perform additional functions such as sensing, storage, and conversion.
Logic ICs can be used for storage, memory, amplification, and multiplexing. They perform fundamental logical operations on digital input signals (1, 0, H, L) to generate a corresponding digital output signal.
Memory modules are essential components in electronic devices, storing data temporarily or permanently for processing and retrieval. From volatile RAM (Random Access Memory) to non-volatile ROM (Read-Only Memory), memory technologies vary in speed, capacity, and functionality, catering to diverse application requirements.
Memory ICs store digital data and retain the information even when the power is turned off. They come in various types, like RAM (Random Access Memory) for fast data access, and ROM (Read-Only Memory) for permanent data storage.
Miscellaneous semiconductor components are a diverse category of electronic components that combines elements from a mix of component devices.
Optoelectronic devices interact with light. This family of devices can emit light, detect light, generate current, and transmit light signals for long-distance communication.
Oscillators generate repetitive waveforms, such as sine, square, or triangle waves. They are commonly used to produce stable and precise frequencies for applications like clocks, signal generation, and communication systems.
Other Function Semiconductor components are a diverse category of semiconductor components that perform a range of specialized functions.
Passive component networks operate without a power source and support data transmission within system by performing filtering, energy storage, and/or signal coupling functions.
Peripheral ICs (Integrated Circuits) are designed to control and manage the peripheral devices connected to a computer or other electronic device.
Programmable Logic ICs are user-programmable devices that allow designers to create custom logic circuits. These cost saving ICs offer real-time data processing and maximum design flexibilty.
RF (Radio Frequency) and microwave devices are used in telecommunications, wireless communications, and electronic systems. These devices include amplifiers, attenuators, filters, mixers, oscillators, and antennas, and a host of other components.
Voltage regulators are used to ensure a constant output voltage despite power fluctuations and load changes. Linear and switching regulators are common types used to maintain voltage stability.
Relays are electromagnetic switches that are used to control the flow of electrical current in an electrical circuit. Relays are a safe means of providing isolation between a controlling circuit and a controlled circuit.
Resistors control the flow of electrical current in a circuit by introducing a set resistance. These passive components reduce current flow, adjust signal levels, and bias active elements in circuits.
Transducers convert energy from one form to another and are crucial in sensing, audio and control systems. They transform physical measures like temperature, pressure, or sound into electrical signals for circuits.
Storage drives are hardware devices used to store and retrieve digital data in computers and electronic devices. These drives come in various forms, including hard disk drives (HDDs), solid-state drives (SSDs), and hybrid drives, offering different levels of capacity, speed, and durability to suit specific storage needs.
Storage media encompass physical or digital mediums used for storing and preserving digital data. From optical discs and magnetic tapes to USB flash drives and memory cards, storage media come in diverse formats and capacities, offering flexibility and reliability for data storage and archival purposes.
Storage systems comprise hardware and software components designed to manage and store digital data efficiently. These systems range from simple standalone devices to complex network-attached storage (NAS) and storage area network (SAN) solutions, providing scalable storage capacity and data protection features for businesses and enterprises.
Switches control electrical current flow by making or breaking connections. These devices vary in design and application, from basic on/off switches to complex industrial automation systems.
Telecom integrated circuits (ICs) are specialized electronics for telecommunications, tailored to high data rates, low power use, and reliable long-distance transmission. These devices include amplifiers, filters, ADCs, DACs, and more-- and they are often integrated on one chip for specific telecom tasks.
Terminal blocks, or connection terminals, are modular blocks that bring together multiple electrical wires at one connection point. They offer a reliable, organized way to terminate cables.
Thermal management devices control heat in electronic systems, preventing overheating and ensuring optimal performance and reliability. Examples include heat sinks, fans, and thermal interface materials that dissipate or transfer heat away from components.
Transformers are devices that alter electrical voltage levels between circuits through electromagnetic induction. They are vital in power distribution, converting high-voltage electricity for transmission and lower voltage for safe usage.
Transistors are 3-layer semiconductor devices that regulate the flow of electrical current. They function as amplifiers, boosting weak signals, and as switches, controlling the flow of current between terminals.
Triggering devices initiate electronic processes or events in response to specific conditions. These devices support many automated tasks such as activating switches and signals, or turning on lights when motion is detected.
Video cards, also known as graphics cards or GPU (Graphics Processing Unit), are essential components in computers, responsible for rendering graphics and images on display devices. These cards feature dedicated processors and memory, delivering smooth and immersive visual experiences for gaming, multimedia, and professional applications.
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The Onsemi MMBF4416A is an N-CHANNEL RF FET with a PLASTIC/EPOXY package. Operating in DEPLETION MODE, it's ideal for ULTRA HIGH FREQUENCY AMPLIFIER applications. With a max power dissipation of 0.225W and feedback capacitance of 0.8pF, this transistor offers high performance in a small outline package.
Median Price
$0.091
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$0.073
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Adafruit Industries
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DigiKey
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Verical
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Chip1Stop
$0.078
Master Electronics
$0.084
Arrow
$0.076
Flip Electronics (Authorized)
Digiode
Nova Conductors
$0.139
DF Sales Co.
$0.150
TME
$0.160
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Bristol Electronics
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IBS Electronics
$0.132
Vyrian
Cyclops Electronics Ltd
NAC Semi
$0.124
ACDS - Activité Composants Distribution Service
ComSIT Distribution GmbH
Dan-Mar Components
R&J Components
Flip Electronics
Pegasus Components GmbH
Holdelec - ElecDif-Pro
Ampacity Inc.
$0.050
Semicontronic
$0.049
$0.048
Corohmni
$0.064
Corphita
$0.066
Continental Prestige Electronics
$0.136
Argo Parts USA
$0.135
Netroflash
Advanced Electronics
Aztec Data Supply Inc.
$0.659
RC Electronics
$0.140
$0.130
Perfect Parts
QUARKTWIN TECHNOLOGY LTD
Lixinc
Robosynatics
$1.347
$1.319
Lucentia Tech
Problanco Electronics
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Metaverse IC Inc.
Kulean Microsystems
UHIMA Technologies
TANS Electronics
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This material is durable and lightweight, making the product easy to handle and transport.
N-channel transistors typically have higher electron mobility and faster switching speeds, making them suitable for applications requiring high performance.
Single configuration simplifies circuit design and integration, making the product easy to use for various amplifier applications.
Designed specifically for amplifier applications, ensuring high performance and reliability in amplifying signals.
Surface mount capability allows for easy integration onto circuit boards, saving space and facilitating mass production.
Rectangular shape provides a standardized form factor for easy mounting and compatibility with various board layouts.
Gull wing terminals provide secure connections and easy soldering during assembly, ensuring reliable performance.
Depletion mode operation allows for precise control over the transistor's conductivity, enabling customized circuit performance.
Ultra high frequency band capabilities enable the product to amplify signals at extremely high frequencies, suitable for advanced communication systems.
Three terminals provide necessary connections for input, output, and biasing, allowing for versatile circuit configurations.
High power dissipation capability ensures reliable operation under varying load conditions without overheating.
Small outline package style reduces the footprint on the circuit board, optimizing space utilization within compact electronic devices.
Junction FET technology offers efficient signal amplification and low noise performance, ideal for high-frequency applications.
High maximum operating temperature allows for reliable operation in demanding environments without performance degradation.
Silicon-based transistor element provides excellent conductivity and reliability, ensuring long-term performance stability.
Tin terminal finish resists corrosion and oxidation, maintaining stable electrical connections over time.
Dual terminal positions offer flexibility in circuit board layout and accommodate various connection configurations.
30 seconds maximum time at peak reflow temperature ensures efficient soldering and reliable joint formation during assembly.
High peak reflow temperature allows for quick and reliable soldering of the transistor onto the circuit board, ensuring robust connections.
Low feedback capacitance minimizes signal distortion and ensures stable amplification performance, especially at higher frequencies.
RF Small Signal Field Effect Transistors (FET) MMBF4416A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Onsemi
Configuration:
Field Effect Transistor Technology:
Maximum Feedback Capacitance (Crss):
Highest Frequency Band:
JESD-30 Code:
JESD-609 Code:
Moisture Sensitivity Level (MSL):
No. of Elements:
No. of Terminals:
Operating Mode:
Maximum Operating Temperature:
Package Body Material:
Package Shape:
Package Style (Meter):
Peak Reflow Temperature (C):
Polarity or Channel Type:
Maximum Power Dissipation (Abs):
Qualification:
Sub-Category:
Surface Mount:
Terminal Finish:
Terminal Form:
Terminal Position:
Maximum Time At Peak Reflow Temperature (s):
Transistor Application:
Transistor Element Material:
MMBF4416A Transistors trade compliance attributes, and parameters.
ECCN
EAR99
ECCN Governance
EAR
PCN Obsolescence/ EOL - Mult Devices EOL 12/Apr/2019 Mult Dev Reinstate 15/Oct/2019
PCN Design/Specification - Standard Marking Lay-out 16/Nov/2021 Standard Marking Lay-out 10/Oct/2022
PCN Assembly/Origin - Assembly/Test Change 23/Dec/2021
PCN Packaging - Binary Year Code Marking 15/Jan/2014 Mult Devices 24/Oct/2017
Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).
President, CEO
Hassane El-Khoury
Executive VP, CFO, Treasurer
Thad Trent
Senior VP
Ross F. Jatou
Aizu Fab
Fabrication
Fab Initiation
1995
Japan
Aizu Wakamatsu
Wafer Capacity
52,000
Si/EPI Fab
2018
Czech Republic
Rožnov pod Radhoštěm
10,000
Expansion Phase 1 for SiC / EPI
2019
14,500
Expansion Phase 2 for SiC / EPI
2024
SiC Fab
2022
USA
Hudson
Bucheon
2013
South Korea
61,000
ISMF - Malaysia
1990
Malaysia
Seremban
95,000
Roznov Device Fab
1987
80,000
Fab 10
2002
East Fishkill
15,000
Burlington
1986
Canada
Gresham
1998
45,000
Bucheon 150mm
2000
50,000
1983
Nampa
Pennsylvania
1997
Mountain Top
36,000
LM358N
National Semiconductor
OPERATIONAL AMPLIFIER; Temperature Grade: COMMERCIAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 8; Package Code: DIP; Package Shape: RECTANGULAR;
0462-201-16141
TE Connectivity
TE Connectivity's 0462-201-16141 is a CRIMP terminal with MACHINED contact design. It operates b/w -55 to 125 °C, suitable for wire gauges from 20 to 16 AWG. With a rated current of 13A, it is ideal for applications requiring FEMALE ROUND PIN-SOCKET contacts.
CRCW06031K00FKEAHP
Vishay Intertechnology
Vishay Intertechnology's CRCW06031K00FKEAHP is a fixed resistor with 1000 ohm resistance, 1% tolerance, and 0.33 W power dissipation. Ideal for surface mount applications in automotive electronics due to AEC-Q200 standard compliance and operating voltage of 75 V.
1N4148WS
Good-ark Electronics
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
Changzhou Starsea Electronics
GRM155R71H103KA88D
Murata Manufacturing
The Murata Manufacturing GRM155R71H103KA88D is a ceramic capacitor with 0.01uF capacitance and 50V rated DC voltage. It has X7R temperature characteristics, -55 to 125°C operating range, and ±10% tolerance. Ideal for surface mount applications in electronics requiring compact size and high reliability.
2N2222A
Tesla Elektronicke Soucastky
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Power Dissipation (Abs): .5 W; Maximum Collector Current (IC): .8 A;
1N5819HW-7-F
SPC TECHNOLOGY/ MULTICOMP
SMBJ18CA
Semitron
TRANS VOLTAGE SUPPRESSOR DIODE; Terminal Position: DUAL; Terminal Form: C BEND; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
ECA2DHG4R7
Panasonic
ECA2DHG4R7 by Panasonic is a 4.7uF aluminum electrolytic capacitor with 200V rated DC voltage. It features tan delta of 0.15, leakage current of 0.0664mA, and ripple current of 50mA, making it ideal for applications requiring high capacitance stability and low leakage in through-hole mounting setups at temperatures ranging from -25 to 105°C.
Onsemi
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;
1N4148
Renesas Technology
RECTIFIER DIODE; Terminal Position: DUAL; Terminal Form: WIRE; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;
Surge Components
2N7002
STMicroelectronics
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Drain Current (ID): .2 A; Transistor Application: SWITCHING;
261
Deltrol Controls
Other Relays;
SN65HVD230DR
Texas Instruments
SN65HVD230DR by Texas Instruments is a BICMOS technology interface circuit with 1Mbps data rate, suitable for industrial applications. It operates at 3.3V, has 8 terminals in a small outline package, and can withstand temperatures from -40 to 85°C.
E8WSDC12-32.768KTR
Abracon
Abracon's E8WSDC12-32.768KTR crystal oscillator offers 20 ppm frequency tolerance, 144% stability, and 70000 ohm series resistance. Ideal for applications requiring precise timing at 0.032768 MHz, such as IoT devices and communication systems.
1N4148WT
Sangdest Microelectronics (Nanjing)
Panjit International
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .35 W; Maximum Time At Peak Reflow Temperature (s): 40; Minimum DS Breakdown Voltage: 60 V;
NPN; Configuration: SINGLE; Surface Mount: NO; Nominal Transition Frequency (fT): 300 MHz; Maximum Collector Current (IC): .8 A; No. of Terminals: 3;
J309-AMMO
NXP Semiconductors
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Transistor Element Material: SILICON; Transistor Application: AMPLIFIER; No. of Terminals: 3;
PD57002S-E
PD57002S-E by STMicroelectronics is an N-channel RF FET designed for amplifier applications. It features a 65V breakdown voltage, 15 dB power gain, and operates in the ultra-high frequency band. Ideal for compact designs with a max temp of 165 °C.
BF545ATRL13
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; JESD-30 Code: R-PDSO-G3; Maximum Operating Temperature: 150 Cel; JESD-609 Code: e3;
934055961115
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Additional Features: LOW NOISE; Maximum Feedback Capacitance (Crss): .03 pF; JESD-30 Code: R-PDSO-G4;
2N5248
2N5248 by Texas Instruments is an N-CHANNEL FET with a PLASTIC/EPOXY body. Operating in DEPLETION MODE, it's ideal for AMPLIFIER applications in the VERY HIGH FREQUENCY BAND. With a max power dissipation of 0.36W and feedback capacitance of 2pF, it offers high performance in a CYLINDRICAL package.
933615000215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Transistor Application: AMPLIFIER; Transistor Element Material: SILICON; Terminal Position: DUAL;
BF2030WH6814XTSA1
Infineon Technologies
BF2030WH6814XTSA1 by Infineon Technologies is a N-CHANNEL RF Small Signal FET with PLASTIC/EPOXY package. It operates in DUAL GATE, DEPLETION MODE and has ULTRA HIGH FREQUENCY BAND. This transistor is commonly used as an AMPLIFIER in various applications.
MMBF4416A
Fairchild Semiconductor
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Shape: RECTANGULAR; Terminal Form: GULL WING;
BF904RT/R
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Style (Meter): SMALL OUTLINE; Minimum DS Breakdown Voltage: 7 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
934057518215
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND; Maximum Drain Current (ID): .03 A; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR;
BF989
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Maximum Power Dissipation (Abs): .2 W; Case Connection: SOURCE; Package Shape: RECTANGULAR;
BLF221B
N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): 7.4 W; Maximum Drain Current (Abs) (ID): 1 A; Transistor Element Material: SILICON;
BF245BRLRE
BF245BRLRE by Onsemi is an N-CHANNEL RF FET with 30V DS Breakdown Voltage. Ideal for AMPLIFIER applications in ULTRA HIGH FREQUENCY BAND, it has a max ID of 0.1A and operates in DEPLETION MODE. Package: PLASTIC/EPOXY, Shape: ROUND, Terminals: 3.
BF909AR
N-CHANNEL; Configuration: COMPLEX; Surface Mount: YES; Terminal Form: GULL WING; Package Shape: RECTANGULAR; Qualification: Not Qualified;
BF991-TAPE-13
BF991-TAPE-13 by NXP Semiconductors is an N-channel RF FET designed for amplifier applications. It features a dual gate, depletion mode operation with a max drain current of 20 mA and a breakdown voltage of 20 V. This surface-mount transistor operates in the very high frequency band, ideal for compact designs.
2SK1243
N-CHANNEL; Maximum Operating Temperature: 150 Cel; Maximum Drain Current (ID): .06 A; Maximum Power Dissipation Ambient: .18 W; Maximum Drain Current (Abs) (ID): .06 A;
BF556A-T
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Terminal Position: DUAL; No. of Terminals: 3; Maximum Operating Temperature: 150 Cel;
BF908-T
N-CHANNEL; Configuration: SINGLE WITH BUILT-IN DIODE; Surface Mount: YES; Package Shape: RECTANGULAR; JESD-30 Code: R-PDSO-G4; Maximum Feedback Capacitance (Crss): 45 pF;
BF556CT/R
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; No. of Elements: 1; Transistor Element Material: SILICON; Package Body Material: PLASTIC/EPOXY;
2N5484RLRM
2N5484RLRM by Onsemi is an N-CHANNEL RF FET with 16 dB Gp for AMPLIFIER applications. Operating in DEPLETION MODE, it offers 0.03 A ID and 1 pF Crss at ULTRA HIGH FREQUENCY BAND. Packaged in PLASTIC/EPOXY, it has a ROUND shape with THROUGH-HOLE terminals.
Partstack™ will investigate all reported instances of potential suspect/counterfeit part listings.
MMBFJ310LT1G
Onsemi's MMBFJ310LT1G is an N-CHANNEL FET for AMPLIFIER applications. It operates in DEPLETION MODE at 25V with ULTRA HIGH FREQUENCY BAND. With a power dissipation of 0.225W, it features GULL WING terminals and PLASTIC/EPOXY package suitable for surface mount technology.
MMBFJ309LT1G
MMBFJ309LT1G by Onsemi is an N-CHANNEL RF FET with a 25V DS Breakdown Voltage, operating in DEPLETION MODE. Ideal for AMPLIFIER applications in the ULTRA HIGH FREQUENCY BAND, it features a max power dissipation of 0.225W and can withstand temperatures up to 150°C.
MMBFJ310LT3G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Finish: MATTE TIN; JEDEC-95 Code: TO-236AB;
MMBF4416
Electronic Devices
RF Small Signal Field-Effect Transistors; Configuration: SINGLE; Surface Mount: YES; Package Shape: RECTANGULAR; Terminal Position: DUAL; JESD-30 Code: R-PDSO-G3;
MMBF4416 by Onsemi is an N-CHANNEL RF FET with 18 dB Gp, ideal for AMPLIFIER applications. Operating in DEPLETION MODE, it offers a very high frequency band and 0.225 W power dissipation. With a small outline package style and tin terminal finish, it has 3 terminals in gull wing shape.
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Transistor Application: AMPLIFIER; Maximum Operating Temperature: 150 Cel;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Field Effect Transistor Technology: JUNCTION;
MMBF4416LT1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Minimum DS Breakdown Voltage: 30 V; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
Motorola
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-30 Code: R-PDSO-G3; Highest Frequency Band: ULTRA HIGH FREQUENCY BAND;
MMBF4416LT1G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Qualification: Not Qualified; Transistor Application: AMPLIFIER;
MMBF5484LT1G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Position: DUAL; Minimum Operating Temperature: -55 Cel;
MMBF5484LT1
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Terminal Form: GULL WING; No. of Terminals: 3;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Maximum Feedback Capacitance (Crss): 1 pF; Maximum Operating Temperature: 150 Cel;
MMBF5486
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Transistor Element Material: SILICON; No. of Terminals: 3;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Operating Mode: DEPLETION MODE; Transistor Element Material: SILICON;
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Field Effect Transistor Technology: METAL-OXIDE SEMICONDUCTOR; JESD-609 Code: e3;
MMBFU310LT1G
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; No. of Elements: 1;
MMBF5484
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; Package Body Material: PLASTIC/EPOXY; JEDEC-95 Code: TO-236AB;
MMBF4416L
N-CHANNEL; Configuration: SINGLE; Surface Mount: YES; Maximum Power Dissipation (Abs): .225 W; JESD-609 Code: e0; Minimum Power Gain (Gp): 10 dB;
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