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2N4221A

Texas Instruments

2N4221A by Texas Instruments

N-CHANNEL; Configuration: SINGLE; Surface Mount: NO; Maximum Power Dissipation (Abs): .3 W; Peak Reflow Temperature (C): NOT SPECIFIED; JESD-30 Code: O-MBCY-W4;

Median Price

$8.800

Lifecycle Status

Suppliers In-Stock

20

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Newark

USA . 42 parts In-Stock

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$8.800

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$5.770

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$5.020

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Verical

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DigiKey Marketplace

USA . 26 parts In-Stock

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$7.560

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$6.270

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American Microsemiconductor Inc.

USA . 846 parts In-Stock

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$10.210

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$10.210

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Digiode

USA . 4,426 parts In-Stock

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Bristol Electronics

USA . 3,229 parts In-Stock

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ACDS - Activité Composants Distribution Service

France . 2,339 parts In-Stock

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Vyrian

USA . 2,128 parts In-Stock

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Anansix

USA . 1,050 parts In-Stock

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Nova Conductors

Japan . 200 parts In-Stock

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Velocity Electronics

USA . 123 parts In-Stock

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LittleDiode

UK . 86 parts In-Stock

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VNN

France . 75 parts In-Stock

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PUI

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ECAB

Sweden . 24 parts In-Stock

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Electronic Expediters

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Microfarads

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ICP Electronique

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Electronics Depot

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Sogenti Electronics

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Distributors (Availability)

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$0.657

100+ parts

$0.651

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$0.624

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$0.657

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Parana Technologies

USA . 1,381 parts In-Stock

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$1.694

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$2.292

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DigiPath Technology Company

USA . 1,808 parts In-Stock

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$1.865

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$1.716

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$1.865

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ChromeModa Solutions

Germany . 3,834 parts In-Stock

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$1.903

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$1.560

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IDEA Electronic Components Group

UK . 2,163 parts In-Stock

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$1.713

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Ampacity Inc.

Singapore . 10 parts In-Stock

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$63.050

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QUARKTWIN TECHNOLOGY LTD

USA . 7,388 parts In-Stock

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Corphita

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Microchip USA

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UNI Independent Distributors

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Glotronic Ltd.

UK . 3,000 parts In-Stock

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Fulton Briggs Corp.

USA . 1,697 parts In-Stock

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Supply Digital

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Netroflash

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Perfect Parts

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Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N4221A attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Field Effect Transistor Technology:

JUNCTION

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N4221A Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-104-5855, 5961001045855, 5961-00-617-3670, 5961006173670, 5961-14-277-1680, 5961142771680

NIIN

001045855, 006173670, 142771680

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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