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2N4222

Texas Instruments

2N4222 by Texas Instruments

2N4222 by Texas Instruments is an N-CHANNEL FET with 30V DS Breakdown Voltage. Ideal for SWITCHING applications, it has a Max Power Dissipation of 0.3W and operates in DEPLETION MODE. With a Max Operating Temperature of 200°C, it features a Package Style of CYLINDRICAL and offers low feedback capacitance at 2pF.

Median Price

$20.350

Lifecycle Status

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18

In-Stock Inventory

1k+

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Mouser Electronics

USA . 103 parts In-Stock

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$20.350

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$13.130

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$12.430

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Freelance Electronics

USA . 4 parts In-Stock

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Bristol Electronics

USA . 8 parts In-Stock

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$8.512

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Digiode

USA . 8,087 parts In-Stock

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$10.916

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Forefront Electronics and Design

USA . 12 parts In-Stock

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$19.600

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Vyrian

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Anansix

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Tech-Mark Corp

USA . 500 parts In-Stock

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Specialty Parts & Electronic Components, Inc. (S.P.E.C.)

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ECAB

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ACDS - Activité Composants Distribution Service

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Cyclops Electronics Ltd

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Prism Electronics

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ComSIT Distribution GmbH

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Electronic Expediters

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DF Sales Co.

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DF Sales Co.

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LittleDiode

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Native Components

USA . 1,391 parts In-Stock

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$0.756

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ChromeModa Solutions

Germany . 79 parts In-Stock

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$1.011

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$0.829

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IDEA Electronic Components Group

UK . 635 parts In-Stock

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$1.215

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$1.094

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DigiPath Technology Company

USA . 1,245 parts In-Stock

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$2.285

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MKK Technologies

India . 108 parts In-Stock

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Corphita

USA . 6,273 parts In-Stock

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Supply Digital

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Northwest PG Solutions

USA . 3,912 parts In-Stock

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Glotronic Ltd.

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Parana Technologies

USA . 1,915 parts In-Stock

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UNI Independent Distributors

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Perfect Parts

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RTC Component Inc.

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Overview

Elevate your RF small signal applications with the Texas Instruments 2N4222. With a reputation for top-notch quality, Texas Instruments delivers a single N-channel field-effect transistor that excels in switching operations. This round-shaped, wire-terminal device operates in depletion mode, offering customers a reliable solution with a minimum DS breakdown voltage of 30V and a maximum power dissipation of 0.3W. Trust in Texas Instruments to provide cutting-edge technology that meets your needs with the 2N4222.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides excellent thermal conductivity and durability, ensuring optimal performance and long-term reliability.

Polarity or Channel Type: N-CHANNEL

N-CHANNEL transistors typically have higher electron mobility, making them more efficient for switching applications.

Configuration: SINGLE

Single configuration simplifies circuit design and integration, making the transistor easier to use.

Transistor Application: SWITCHING

Designed specifically for switching applications, this transistor offers fast switching speed and low power consumption.

Minimum DS Breakdown Voltage: 30 V

With a minimum breakdown voltage of 30 V, this transistor can handle higher voltage levels without failure, ensuring robust performance.

Maximum Power Dissipation (Abs): 0.3 W

The high maximum power dissipation of 0.3 W allows the transistor to handle higher power levels without overheating, increasing its reliability.

Maximum Operating Temperature: 200 °C

With a maximum operating temperature of 200°C, this transistor can operate in high-temperature environments without performance degradation.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N4222 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.015 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2 pF

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

200 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

SWITCHING

Transistor Element Material:

SILICON

Trade Compliance

2N4222 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

5961-00-062-3131, 5961000623131, 5961-00-493-4380, 5961004934380, 5961-14-284-8780, 5961142848780

NIIN

000623131, 004934380, 142848780

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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