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2N4223

Texas Instruments

2N4223 by Texas Instruments

2N4223 by Texas Instruments is an N-CHANNEL RF FET with 30V DS Breakdown Voltage, 10 dB Power Gain, and 0.02A Drain Current. Ideal for AMPLIFIER applications in VERY HIGH FREQUENCY BAND due to DEPLETION MODE operation. Package: METAL, Shape: ROUND, Technology: JUNCTION.

Median Price

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Lifecycle Status

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9

In-Stock Inventory

1k+

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Vyrian

USA . 8,247 parts In-Stock

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Anansix

USA . 2,510 parts In-Stock

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Digiode

USA . 1,589 parts In-Stock

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1,589

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Resion

USA . 181 parts In-Stock

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Electronic Expediters

USA . 147 parts In-Stock

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Bristol Electronics

USA . 89 parts In-Stock

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PUI

USA . 83 parts In-Stock

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Lakeland Logistics Inc

USA . 50 parts In-Stock

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MISTER SPROCKETS

USA . 11 parts In-Stock

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Parana Technologies

USA . 1,151 parts In-Stock

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$0.406

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$1.589

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DigiPath Technology Company

USA . 1,348 parts In-Stock

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$0.447

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$0.411

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ChromeModa Solutions

Germany . 3,436 parts In-Stock

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$0.456

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$0.374

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IDEA Electronic Components Group

UK . 103 parts In-Stock

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$0.410

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Advanced Electronics

New Zealand . 50 parts In-Stock

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$1.094

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Native Components

USA . 212 parts In-Stock

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$5.469

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AZTECH Wire

Italy . 430 parts In-Stock

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One Stop Electronics

USA . 1,535 parts In-Stock

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Supply Digital

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Northwest PG Solutions

USA . 1,980 parts In-Stock

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Corphita

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RGB Technical Solutions

Ukraine . 462 parts In-Stock

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RTC Component Inc.

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Overview

Experience unmatched performance with the Texas Instruments 2N4223 RF Small Signal Field Effect Transistor. Crafted with precision and expertise, this N-CHANNEL transistor offers superior amplification capabilities suitable for a wide range of applications. Whether you're looking to enhance your audio equipment or boost your signal strength, the 2N4223 delivers reliable results with its very high frequency band operation and low power consumption. Trust in Texas Instruments for quality, efficiency, and innovation in every transistor they produce. Elevate your electronics with the 2N4223 today.

Feature Benefit Bullets

Package Body Material: METAL

Metal package provides good thermal conductivity and durability, ensuring reliable performance in various operating conditions.

Polarity or Channel Type: N-CHANNEL

N-channel FETs typically have higher electron mobility and lower on-state resistance, making them suitable for high-performance amplification applications.

Minimum DS Breakdown Voltage: 30 V

High breakdown voltage allows for safe operation in circuits with higher voltage levels, providing robust protection against voltage spikes.

Minimum Power Gain (Gp): 10 dB

A minimum power gain of 10 dB signifies good amplification capabilities, making this transistor suitable for amplifying weak signals efficiently.

Operating Mode: DEPLETION MODE

Depletion mode transistors can conduct current when the gate-source voltage is 0V or negative, offering advantages in certain circuit designs and applications.

Maximum Operating Temperature: 175 °C

With a high maximum operating temperature of 175°C, this FET can withstand elevated temperature conditions without compromising performance, suitable for demanding environments.

Technical Specifications

RF Small Signal Field Effect Transistors (FET) 2N4223 attributes and parameters. Explore more RF Small Signal Field Effect Transistors (FET) devices from Texas Instruments

Specs

Case Connection:

ISOLATED

Configuration:

Minimum DS Breakdown Voltage:

30 V

Maximum Drain Current (ID):

.02 A

Field Effect Transistor Technology:

JUNCTION

Maximum Feedback Capacitance (Crss):

2 pF

Highest Frequency Band:

VERY HIGH FREQUENCY BAND

JEDEC-95 Code:

TO-72

JESD-30 Code:

O-MBCY-W4

No. of Elements:

1

No. of Terminals:

4

Operating Mode:

DEPLETION MODE

Maximum Operating Temperature:

175 Cel

Package Body Material:

METAL

Package Shape:

ROUND

Package Style (Meter):

CYLINDRICAL

Peak Reflow Temperature (C):

NOT SPECIFIED

Polarity or Channel Type:

Maximum Power Dissipation (Abs):

Minimum Power Gain (Gp):

10 dB

Qualification:

Not Qualified

Sub-Category:

Other Transistors

Surface Mount:

NO

Terminal Form:

WIRE

Terminal Position:

BOTTOM

Maximum Time At Peak Reflow Temperature (s):

NOT SPECIFIED

Transistor Application:

AMPLIFIER

Transistor Element Material:

SILICON

Trade Compliance

2N4223 Transistors trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

NSN

1680-99-144-1797, 1680991441797, 5961-00-883-6386, 5961008836386

NIIN

991441797, 008836386

Manufacturer Highlights

Texas Instruments

Texas Instruments Inc. (TI) is one of the world's leading semiconductor companies and a global leader in analog and digital signal processing technology. The company has had a major impact on the electronics industry for over 80 years, manufacturing integrated circuits (ICs), software and subsystems that leverage high-performance computing capabilities. It offers an extensive portfolio of solutions for a wide range of industries, from aerospace to medical devices and consumer products to communication systems. Over its long history, TI has become synonymous with quality, reliability and innovation. Today, TI is one of the largest semiconductor companies in the world with operations in more than 30 countries across six continents.

The material and information contained is this video is for educational and general information purposes. All rights remain with respective rightsholders. Fair Use Statement

Management team

President, CEO

Haviv Ilan

Chairman

Richard K. Templeton

Senior VP, CFO

Rafael R. Lizardi

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

M - Fab

Fabrication

Fab Initiation

1997

USA

South Portland

Wafer Capacity

32,000

1997

32,000

D - FAB

Fabrication

Fab Initiation

1966

USA

Dallas

Wafer Capacity

42,000

1966

42,000

D MOS - 6

Fabrication

Fab Initiation

2002

USA

Dallas

Wafer Capacity

25,000

2002

25,000

D MOS - 5

Fabrication

Fab Initiation

1995

USA

Dallas

Wafer Capacity

75,000

1995

75,000

Miho - 8

Fabrication

Fab Initiation

1980

Japan

Inashiki

Wafer Capacity

43,000

1980

43,000

S FAB 1

Fabrication

Fab Initiation

1966

USA

Sherman

Wafer Capacity

91,000

1966

91,000

F - FAB

Fabrication

Fab Initiation

2001

Germany

Freising

Wafer Capacity

37,000

2001

37,000

R Fab 1

Fabrication

Fab Initiation

2010

USA

Richardson

Wafer Capacity

40,000

2010

40,000

D HC Line

Fabrication

Fab Initiation

1999

USA

Dallas

Wafer Capacity

2,000

1999

2,000

JV3

Fabrication

Fab Initiation

2001

Japan

Aizu Wakamatsu

Wafer Capacity

45,000

2001

45,000

C - FAB

Fabrication

Fab Initiation

2007

China

Chengdu

Wafer Capacity

30,000

2007

30,000

L - Fab

Fabrication

Fab Initiation

2015

USA

Lehi

Wafer Capacity

70,000

2015

70,000

R - Fab 2

Fabrication

Fab Initiation

2022

USA

Richardson

Wafer Capacity

2022

S - FAB 2

Fabrication

Fab Initiation

2025

USA

Sherman

Wafer Capacity

2025

S - FAB 3

Fabrication

Fab Initiation

2028

USA

Sherman

Wafer Capacity

2028

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