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PIN Diodes

PIN diodes are electronic components that are used in microwave and radio frequency applications as switches or attenuators. They are named after their structure, which consists of a P-type layer, an intrinsic layer, and an N-type layer.

PIN diodes operate based on the properties of their intrinsic layer, which has a low doping density, making it highly resistive. When a forward-bias voltage is applied to the diode, the intrinsic layer becomes less resistive, allowing current to flow through the diode. When a reverse-bias voltage is applied to the diode, the intrinsic layer becomes highly resistive, acting as an open switch or attenuator for microwave and radio frequency signals.

PIN diodes offer several advantages over other types of switches and attenuators, such as low insertion loss, high isolation, and fast switching speed. They can be used in various applications, such as radio frequency amplifiers, attenuators, switches, and phase shifters.

PIN diodes come in different package sizes and configurations, depending on the application and the required performance. They can be integrated into a circuit board or mounted in a separate enclosure, depending on the application and the space available.

PIN Diodes

Available Parts 1,961

Part RoHS Manufacturer Description Diode Type Terminal Position Terminal Form No. of Terminals Surface Mount Package Shape Package Body Material Diode Resistive Test Current Config Frequency Band Maximum Forward Voltage (VF) Maximum Diode Capacitance Technology Maximum Reverse Current No. of Elements Reverse Test Voltage Package Style (Meter) Sub-Category Maximum Repetitive Peak Reverse Voltage Maximum Operating Temperature Application Minimum Operating Temperature Terminal Finish JESD-30 Code Maximum Diode Forward Resistance Moisture Sensitivity Level (MSL) Case Connection Qualification Maximum Power Dissipation Nominal Diode Capacitance Additional Features Nominal Minority Carrier Lifetime JEDEC-95 Code Minimum Breakdown Voltage Maximum Non Repetitive Peak Forward Current JESD-609 Code Maximum Time At Peak Reflow Temperature (s) Peak Reflow Temperature (C) Diode Element Material Diode Resistive Test Frequency Reference Standard
CLA4603-085LF by Skyworks Solutions

CLA4603-085LF

Skyworks Solutions

PIN DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

PIN DIODE

DUAL

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

SINGLE

HIGH FREQUENCY TO C BAND

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

175 Cel

LIMITER

-55 Cel

TIN

S-PDSO-N2

2 ohm

1

CATHODE

2 W

.01 us

20 V

e3

260

SILICON

BAP64-06,215 by NXP Semiconductors

BAP64-06,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

COMMON ANODE, 2 ELEMENTS

S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G3

1.35 ohm

1

Not Qualified

.25 W

.52 pF

HIGH VOLTAGE

1.55 us

TO-236AB

175 V

e3

30

260

SILICON

100 MHz

BAR6302VH6327XTSA1 by Infineon Technologies

BAR6302VH6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

125 Cel

SWITCHING

-55 Cel

TIN

R-PDSO-F2

2 ohm

1

.25 W

.075 us

50 V

e3

SILICON

AEC-Q101

DC2118B by Gec Plessey Semiconductors

DC2118B

Gec Plessey Semiconductors

PIN DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

PIN DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

100 mA

SINGLE

HIGH FREQUENCY TO KU BAND

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

MICROWAVE

PIN Diodes

150 Cel

ATTENUATOR; LIMITER; SWITCHING

-55 Cel

O-CEMW-N2

1 ohm

Not Qualified

.25 W

.05 us

100 V

SILICON

HSMP-3822-TR1 by Broadcom

HSMP-3822-TR1

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

POSITIVE-INTRINSIC-NEGATIVE

20 V

SMALL OUTLINE

PIN Diodes

150 Cel

TIN LEAD

R-PDSO-G3

1.5 ohm

Not Qualified

.6 pF

.07 us

50 V

e0

SILICON

100 MHz

NTE555 by Nte Electronics

NTE555

Nte Electronics

PIN DIODE; Terminal Position: DUAL; Terminal Form: THROUGH-HOLE; No. of Terminals: 2; Surface Mount: NO; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

THROUGH-HOLE

2

NO

RECTANGULAR

PLASTIC/EPOXY

SINGLE

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

20 V

IN-LINE

125 Cel

SWITCHING

-55 Cel

R-PDIP-T2

.4 W

.48 pF

.0001 us

50 V

SILICON

DC2552A by Gec Plessey Semiconductors

DC2552A

Gec Plessey Semiconductors

PIN DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 1; Surface Mount: YES; Package Shape: ROUND;

PIN DIODE

UPPER

NO LEAD

1

YES

ROUND

UNSPECIFIED

25 mA

SINGLE

HIGH FREQUENCY TO KU BAND

.12 pF

POSITIVE-INTRINSIC-NEGATIVE

1

UNCASED CHIP

PIN Diodes

150 Cel

SWITCHING

-55 Cel

O-XUUC-N1

2 ohm

Not Qualified

.25 W

30 us

25 V

SILICON

HSMP-3822 by Broadcom

HSMP-3822

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

150 Cel

SWITCHING

R-PDSO-G3

.6 ohm

LOW DISTORTION

.07 us

50 V

NOT SPECIFIED

NOT SPECIFIED

SILICON

BAR6503WE6327HTSA1 by Infineon Technologies

BAR6503WE6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;

PIN DIODE

TIN

1

e3

BAR6405E6327HTSA1 by Infineon Technologies

BAR6405E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

C BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

125 Cel

ATTENUATOR; SWITCHING

-55 Cel

TIN

R-PDSO-G3

1.35 ohm

1

.25 W

1.55 us

150 V

e3

SILICON

AEC-Q101

HSMP-3822-TR1G by Broadcom

HSMP-3822-TR1G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

2

20 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

NICKEL PALLADIUM GOLD

R-PDSO-G3

.6 ohm

1

Not Qualified

.25 W

.6 pF

LOW DISTORTION

.07 us

50 V

e4

20

260

SILICON

100 MHz

HSMP-3822-BLKG by Broadcom

HSMP-3822-BLKG

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

2

20 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

NICKEL PALLADIUM GOLD

R-PDSO-G3

.6 ohm

1

Not Qualified

.25 W

.6 pF

LOW DISTORTION

.07 us

50 V

e4

20

260

SILICON

100 MHz

SMP1330-005LF by Skyworks Solutions

SMP1330-005LF

Skyworks Solutions

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

HIGH FREQUENCY TO S BAND

1 pF

POSITIVE-INTRINSIC-NEGATIVE

2

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

LIMITER

Matte Tin (Sn)

R-PDSO-G3

1.5 ohm

1

Not Qualified

.25 W

.7 pF

LOW DISTORTION

.004 us

20 V

e3

40

260

SILICON

100 MHz

BAR9002ELSE6327XTSA1 by Infineon Technologies

BAR9002ELSE6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: BOTTOM; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

BOTTOM

NO LEAD

2

YES

RECTANGULAR

PLASTIC/EPOXY

3 mA

SINGLE

C BAND

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

CHIP CARRIER

125 Cel

SWITCHING

-55 Cel

GOLD

R-PBCC-N2

2.3 ohm

1

.15 W

.35 pF

HIGH VOLTAGE

.75 us

80 V

e4

SILICON

100 MHz

BAP50-04W,115 by NXP Semiconductors

BAP50-04W,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.6 pF

POSITIVE-INTRINSIC-NEGATIVE

2

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

-65 Cel

TIN

R-PDSO-G3

5 ohm

1

Not Qualified

.45 pF

1.05 us

50 V

e3

30

260

SILICON

100 MHz

BAR6404WH6327XTSA1 by Infineon Technologies

BAR6404WH6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; Diode Element Material: SILICON; Technology: POSITIVE-INTRINSIC-NEGATIVE; JESD-609 Code: e3;

PIN DIODE

POSITIVE-INTRINSIC-NEGATIVE

TIN

1

e3

SILICON

BAR6404E6327HTSA1 by Infineon Technologies

BAR6404E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Finish: TIN; Technology: POSITIVE-INTRINSIC-NEGATIVE; Diode Element Material: SILICON; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3;

PIN DIODE

POSITIVE-INTRINSIC-NEGATIVE

TIN

1

e3

SILICON

BA595E6327 by Infineon Technologies

BA595E6327

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

1.5 mA

SINGLE

MEDIUM FREQUENCY TO L BAND

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

MATTE TIN

R-PDSO-G2

7 ohm

1

Not Qualified

.26 pF

1.6 us

50 V

e3

260

SILICON

100 MHz

BAR66E6327HTSA1 by Infineon Technologies

BAR66E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.6 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

R-PDSO-G3

1

Not Qualified

.25 W

.7 us

150 V

260

SILICON

BAR6304E6327HTSA1 by Infineon Technologies

BAR6304E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

150 Cel

SWITCHING

TIN

R-PDSO-G3

2 ohm

1

.25 W

.075 us

50 V

e3

SILICON

HSMP-3822-BLK by Broadcom

HSMP-3822-BLK

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

POSITIVE-INTRINSIC-NEGATIVE

20 V

SMALL OUTLINE

PIN Diodes

150 Cel

TIN LEAD

R-PDSO-G3

1.5 ohm

Not Qualified

.6 pF

.07 us

50 V

e0

SILICON

100 MHz

MA4P504-1072T by M/a-com Technology Solutions

MA4P504-1072T

M/a-com Technology Solutions

PIN DIODE; Terminal Position: UPPER; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

PIN DIODE

UPPER

NO LEAD

2

YES

SQUARE

CERAMIC, METAL-SEALED COFIRED

100 mA

SINGLE

S BAND

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

1

UNCASED CHIP

PIN Diodes

175 Cel

SWITCHING

TIN OVER NICKEL

S-CUUC-N2

.6 ohm

CATHODE

Not Qualified

10 W

HIGH RELIABILITY, HIGH VOLTAGE, LOW LEAKAGE CURRENT

1 us

500 V

e3

260

SILICON

100 MHz

DC2110A by Gec Plessey Semiconductors

DC2110A

Gec Plessey Semiconductors

PIN DIODE; Terminal Position: END; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: ROUND;

PIN DIODE

END

NO LEAD

2

YES

ROUND

CERAMIC, METAL-SEALED COFIRED

20 mA

SINGLE

HIGH FREQUENCY TO KU BAND

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

MICROWAVE

PIN Diodes

150 Cel

ATTENUATOR; LIMITER; SWITCHING

-55 Cel

O-CEMW-N2

2 ohm

Not Qualified

.25 W

.005 us

50 V

SILICON

BAR8802VH6327XTSA1 by Infineon Technologies

BAR8802VH6327XTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

ULTRA HIGH FREQUENCY

.4 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

125 Cel

SWITCHING

-55 Cel

MATTE TIN

R-PDSO-F2

2.5 ohm

1

.25 W

.5 us

80 V

e3

SILICON

HSMP-3822-TR2G by Broadcom

HSMP-3822-TR2G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

2

20 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

NICKEL PALLADIUM GOLD

R-PDSO-G3

.6 ohm

1

Not Qualified

.25 W

.6 pF

LOW DISTORTION

.07 us

50 V

e4

20

260

SILICON

100 MHz

BAR6403WE6327HTSA1 by Infineon Technologies

BAR6403WE6327HTSA1

Infineon Technologies

PIN DIODE; Technology: POSITIVE-INTRINSIC-NEGATIVE; Diode Element Material: SILICON; Terminal Finish: TIN; JESD-609 Code: e3; Moisture Sensitivity Level (MSL): 1;

PIN DIODE

POSITIVE-INTRINSIC-NEGATIVE

TIN

1

e3

SILICON

BAP64-05,215 by NXP Semiconductors

BAP64-05,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

COMMON CATHODE, 2 ELEMENTS

S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G3

40 ohm

1

Not Qualified

.25 W

.52 pF

HIGH VOLTAGE

1.55 us

175 V

e3

30

260

SILICON

100 MHz

SMP1307-004LF by Skyworks Solutions

SMP1307-004LF

Skyworks Solutions

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

100 mA

COMMON CATHODE, 2 ELEMENTS

HIGH FREQUENCY TO L BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR

Matte Tin (Sn)

R-PDSO-G3

3 ohm

1

Not Qualified

.25 W

LOW DISTORTION

1.5 us

200 V

e3

40

260

SILICON

100 MHz

HSMP-3820-TR1G by Broadcom

HSMP-3820-TR1G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

.8 pF

POSITIVE-INTRINSIC-NEGATIVE

1

20 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

NICKEL PALLADIUM GOLD

R-PDSO-G3

.6 ohm

1

Not Qualified

.25 W

.6 pF

LOW DISTORTION

.07 us

50 V

e4

20

260

SILICON

100 MHz

HSMP-389C-TR1 by Broadcom

HSMP-389C-TR1

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

1 mA

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

2

5 V

SMALL OUTLINE

PIN Diodes

150 Cel

SWITCHING

TIN LEAD

R-PDSO-G3

2.5 ohm

Not Qualified

.2 pF

.2 us

100 V

e0

SILICON

100 MHz

BAP64-02,115 by NXP Semiconductors

BAP64-02,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

SINGLE

S BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-F2

1.35 ohm

1

Not Qualified

.715 W

.48 pF

HIGH VOLTAGE

1.55 us

175 V

e3

30

260

SILICON

100 MHz

BAR6402VH6327XTSA1 by Infineon Technologies

BAR6402VH6327XTSA1

Infineon Technologies

PIN DIODE; Technology: POSITIVE-INTRINSIC-NEGATIVE; Terminal Finish: TIN; Moisture Sensitivity Level (MSL): 1; JESD-609 Code: e3; Diode Element Material: SILICON;

PIN DIODE

POSITIVE-INTRINSIC-NEGATIVE

TIN

1

e3

SILICON

MA4P606-131 by TE Connectivity

MA4P606-131

TE Connectivity

PIN DIODE; Surface Mount: YES; Maximum Operating Temperature: 175 Cel; Reverse Test Voltage: 100 V; Minimum Breakdown Voltage: 1000 V; Nominal Diode Capacitance: .6 pF;

PIN DIODE

YES

100 mA

100 V

PIN Diodes

175 Cel

.7 ohm

.6 pF

3 us

1000 V

SMP1321-085LF by Skyworks Solutions

SMP1321-085LF

Skyworks Solutions

PIN DIODE; Terminal Position: DUAL; Terminal Form: NO LEAD; No. of Terminals: 2; Surface Mount: YES; Package Shape: SQUARE;

PIN DIODE

DUAL

NO LEAD

2

YES

SQUARE

PLASTIC/EPOXY

10 mA

SINGLE

HIGH FREQUENCY TO C BAND

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

1

30 V

SMALL OUTLINE

150 Cel

ATTENUATOR; SWITCHING

-40 Cel

S-PDSO-N2

2 ohm

1

CATHODE

1.4 W

.27 pF

LOW DISTORTION

.4 us

260

SILICON

100 MHz

UM7512DR by Microchip Technology

UM7512DR

Microchip Technology

PIN DIODE; Terminal Position: RADIAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: NO; Package Shape: ROUND;

PIN DIODE

RADIAL

FLAT

2

NO

ROUND

UNSPECIFIED

SINGLE

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

POST/STUD MOUNT

ATTENUATOR; SWITCHING

TIN LEAD

O-XRPM-F2

1 ohm

Not Qualified

7.5 W

LOW DISTORTION, METALLURGICALLY BONDED

3.5 us

e0

SILICON

BAP50-05,215 by NXP Semiconductors

BAP50-05,215

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

.5 mA

COMMON CATHODE, 2 ELEMENTS

.6 pF

POSITIVE-INTRINSIC-NEGATIVE

2

1 V

SMALL OUTLINE

PIN Diodes

150 Cel

-65 Cel

TIN

R-PDSO-G3

40 ohm

1

Not Qualified

.25 W

.6 pF

50 V

e3

30

260

SILICON

100 MHz

HSMP-4820-BLKG by Broadcom

HSMP-4820-BLKG

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

10 mA

SINGLE

L BAND

1 pF

POSITIVE-INTRINSIC-NEGATIVE

1

20 V

SMALL OUTLINE

PIN Diodes

150 Cel

LIMITER; SWITCHING

NICKEL PALLADIUM GOLD

R-PDSO-G3

.6 ohm

1

Not Qualified

.25 W

.75 pF

LOW DISTORTION

50 V

e4

20

260

SILICON

BAR6305E6327HTSA1 by Infineon Technologies

BAR6305E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

COMMON CATHODE, 2 ELEMENTS

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

125 Cel

SWITCHING

-55 Cel

TIN

R-PDSO-G3

2 ohm

1

.25 W

.075 us

50 V

e3

SILICON

AEC-Q101

MA4P4301F-1091T by TE Connectivity

MA4P4301F-1091T

TE Connectivity

PIN DIODE; Surface Mount: YES; Maximum Diode Forward Resistance: 1 ohm; Diode Resistive Test Frequency: 100 MHz; Reverse Test Voltage: 100 V; Minimum Breakdown Voltage: 100 V;

PIN DIODE

YES

100 mA

100 V

PIN Diodes

175 Cel

1 ohm

2 pF

8 us

100 V

100 MHz

MA4P7446F-1091T by TE Connectivity

MA4P7446F-1091T

TE Connectivity

PIN DIODE; Surface Mount: YES; Reverse Test Voltage: 100 V; Nominal Diode Capacitance: 2.2 pF; Diode Resistive Test Frequency: 100 MHz; Minimum Breakdown Voltage: 600 V;

PIN DIODE

YES

100 mA

100 V

PIN Diodes

125 Cel

.5 ohm

2.2 pF

19 us

600 V

100 MHz

GC4225-150B/TR by Microchip Technology

GC4225-150B/TR

Microchip Technology

PIN DIODE; Config: SINGLE; Maximum Diode Forward Resistance: .6 ohm; Diode Resistive Test Current: 20 mA; Diode Element Material: SILICON; Reference Standard: MIL-19500;

PIN DIODE

20 mA

SINGLE

ULTRA HIGH FREQUENCY TO KU BAND

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

1

10 V

150 Cel

ATTENUATOR; LIMITER; SWITCHING

-55 Cel

.6 ohm

HIGH RELIABILITY

.5 us

250 V

SILICON

1000 MHz

MIL-19500

BAP65-03,115 by NXP Semiconductors

BAP65-03,115

NXP Semiconductors

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

2

YES

RECTANGULAR

PLASTIC/EPOXY

5 mA

SINGLE

.9 pF

POSITIVE-INTRINSIC-NEGATIVE

1

0 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

-65 Cel

TIN

R-PDSO-G2

.9 ohm

1

Not Qualified

.5 W

.65 pF

.17 us

30 V

e3

30

260

SILICON

100 MHz

HSMP-3814-TR1G by Broadcom

HSMP-3814-TR1G

Broadcom

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

100 mA

COMMON CATHODE, 2 ELEMENTS

.35 pF

POSITIVE-INTRINSIC-NEGATIVE

2

50 V

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR

NICKEL PALLADIUM GOLD

R-PDSO-G3

3 ohm

1

Not Qualified

.27 pF

LOW DISTORTION

1.5 us

100 V

e4

20

260

SILICON

100 MHz

BAT1804E6327HTSA1 by Infineon Technologies

BAT1804E6327HTSA1

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

SERIES CONNECTED, CENTER TAP, 2 ELEMENTS

VERY HIGH FREQUENCY TO ULTRA HIGH FREQUENCY

1 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

150 Cel

SWITCHING

TIN

R-PDSO-G3

.7 ohm

1

.12 us

35 V

e3

SILICON

GC4225-150B by Microchip Technology

GC4225-150B

Microchip Technology

PIN DIODE; Diode Resistive Test Frequency: 1000 MHz; No. of Elements: 1; Maximum Operating Temperature: 150 Cel; Config: SINGLE; Application: ATTENUATOR; LIMITER; SWITCHING;

PIN DIODE

20 mA

SINGLE

ULTRA HIGH FREQUENCY TO KU BAND

.5 pF

POSITIVE-INTRINSIC-NEGATIVE

1

10 V

150 Cel

ATTENUATOR; LIMITER; SWITCHING

-55 Cel

.6 ohm

HIGH RELIABILITY

.5 us

250 V

SILICON

1000 MHz

MIL-19500

BAR6302VH6327XT by Infineon Technologies

BAR6302VH6327XT

Infineon Technologies

PIN DIODE; Terminal Position: DUAL; Terminal Form: FLAT; No. of Terminals: 2; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

FLAT

2

YES

RECTANGULAR

PLASTIC/EPOXY

SINGLE

S BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

1

SMALL OUTLINE

150 Cel

SWITCHING

MATTE TIN

R-PDSO-F2

2 ohm

.25 W

.075 us

50 V

e3

SILICON

AEC-Q101

BAR9002ELE6327XTMA1 by Infineon Technologies

BAR9002ELE6327XTMA1

Infineon Technologies

PIN Diodes; Moisture Sensitivity Level (MSL): 1; Terminal Finish: GOLD; JESD-609 Code: e4;

GOLD

1

e4

SMP1302-003LF by Skyworks Solutions

SMP1302-003LF

Skyworks Solutions

PIN DIODE; Terminal Position: DUAL; Terminal Form: GULL WING; No. of Terminals: 3; Surface Mount: YES; Package Shape: RECTANGULAR;

PIN DIODE

DUAL

GULL WING

3

YES

RECTANGULAR

PLASTIC/EPOXY

1 mA

COMMON ANODE, 2 ELEMENTS

HIGH FREQUENCY TO L BAND

.3 pF

POSITIVE-INTRINSIC-NEGATIVE

2

SMALL OUTLINE

PIN Diodes

150 Cel

ATTENUATOR; SWITCHING

Matte Tin (Sn)

R-PDSO-G3

1.5 ohm

1

Not Qualified

.25 W

LOW DISTORTION

.7 us

200 V

e3

40

260

SILICON

100 MHz