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BA595E6327HTSA1

Infineon Technologies

BA595E6327HTSA1 by Infineon Technologies

Infineon's BA595E6327HTSA1 is a PIN diode with 0.4 pF capacitance, 7 ohm forward resistance, and 50V breakdown voltage. Ideal for attenuator and switching applications in medium to L band frequencies. Features small outline package, dual terminals, and positive-intrinsic-negative technology.

Median Price

$0.068

Lifecycle Status

Suppliers In-Stock

5

In-Stock Inventory

1k+

Distributors (Authorized)

Supplier In-Stock 1+ parts 100+ parts 1k+ parts 10k+ parts

Rochester

USA . 21 parts In-Stock

1+ parts

-

100+ parts

$0.068

1k+ parts

$0.056

10k+ parts

$0.050

21

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$0.068

$0.056

$0.050

Distributors (In-Stock)

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Digiode

USA . 505 parts In-Stock

1+ parts

$0.053

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505

$0.053

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Nova Conductors

Japan . 150 parts In-Stock

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$0.240

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150

$0.240

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Vyrian

USA . 7,686 parts In-Stock

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7,686

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VNN

France . 30 parts In-Stock

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Distributors (Availability)

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Ampacity Inc.

Singapore . 21 parts In-Stock

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$0.048

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21

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Corphita

USA . 827 parts In-Stock

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$0.050

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827

$0.050

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Modulus Dynamics

Lithuania . 31,888 parts In-Stock

1+ parts

$0.083

100+ parts

$0.080

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$0.076

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-

31,888

$0.083

$0.080

$0.076

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AZTECH Wire

Italy . 596 parts In-Stock

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$14.220

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596

$14.220

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Perfect Parts

USA . 32,617 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 6,750 parts In-Stock

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6,750

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Microchip USA

USA . 3,405 parts In-Stock

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Overview

Upgrade your electronic devices with the high-quality BA595E6327HTSA1 PIN Diode from Infineon Technologies. With a technology of positive-intrinsic-negative and a maximum breakdown voltage of 50V, this diode is perfect for applications such as attenuators and switching in the medium frequency to L band range. Its small outline package shape and dual terminal position make it easy to integrate into your designs. Experience the value and benefits of Infineon's expertise in semiconductor manufacturing with the BA595E6327HTSA1. Elevate your projects with reliable performance and precision engineering.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan and reliability.

Frequency Band: MEDIUM FREQUENCY TO L BAND

Suitable for a wide range of frequency applications, making it versatile for various uses.

Surface Mount: YES

Allows for easy and convenient installation on circuit boards, saving time and effort.

Maximum Diode Capacitance: 0.4 pF

Low capacitance ensures minimal signal loss and high efficiency in signal processing.

Application: ATTENUATOR; SWITCHING

Can be used in both attenuation and switching applications, providing flexibility in design and functionality.

Maximum Operating Temperature: 150 °C

Can operate at high temperatures without performance degradation, suitable for various environments.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Utilizes PIN diode technology for improved performance and efficiency in signal processing.

Diode Element Material: SILICON

Silicon material provides good performance and reliability for the diode in various applications.

Technical Specifications

PIN Diodes BA595E6327HTSA1 attributes and parameters. Explore more PIN Diodes devices from Infineon Technologies

Specs

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

50 V

Config:

SINGLE

Maximum Diode Capacitance:

.4 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

7 ohm

Diode Type:

Frequency Band:

MEDIUM FREQUENCY TO L BAND

JESD-30 Code:

R-PDSO-G2

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

1.6 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Qualification:

Not Qualified

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Trade Compliance

BA595E6327HTSA1 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Infineon Technologies

Infineon Technologies AG is a leading global semiconductor manufacturer and provider of comprehensive solutions for automotive, industrial, and consumer applications. Founded in 1999, the company has grown to become one of the largest semiconductor manufacturers in Europe. Infineon is headquartered in Neubiberg, Germany with operations across countries in Europe and Asia Pacific. Infineon provides microelectronics products that address many of today's societal challenges affecting energy efficiency, mobility, security and connectivity. Over the past two decades Infineon has become a major player in the semiconductor industry with an impressive portfolio of innovative technologies. As one of only four companies that produce DRAM chips for automobiles, Infineon produces cutting-edge processors for use in advanced driver assistance systems (ADAS). Likewise, they specialize in providing advanced embedded secure microcontrollers that are essential for connected devices. Furthermore, they offer integrated circuit solutions for industrial power control such as motor controllers and embedded gate drivers.

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Management team

CEO

Jochen Hanebeck

Chief Financial Officer

Sven Schneider

Chief Marketing Officer

Andreas Urschitz

Manufacturer fab locations 19

Fab name Location Fab Initiation Wafer Capacity

Villach 300mm

Fabrication

Fab Initiation

2011

Austria

Villach

Wafer Capacity

11,000

2011

11,000

Kulim 2

Fabrication

Fab Initiation

2016

Malaysia

Kulim

Wafer Capacity

79,500

2016

79,500

Dresden - Module 3

Fabrication

Fab Initiation

1999

Germany

Dresden

Wafer Capacity

58,000

1999

58,000

Villach Building

Fabrication

Fab Initiation

2016

Austria

Villach

Wafer Capacity

2,000

2016

2,000

Regensburg

Fabrication

Fab Initiation

1986

Germany

Regensburg

Wafer Capacity

60,000

1986

60,000

Dresden 200 - Module 1

Fabrication

Fab Initiation

1995

Germany

Dresden

Wafer Capacity

28,000

1995

28,000

Dresden 200 - Module 2

Fabrication

Fab Initiation

1996

Germany

Dresden

Wafer Capacity

28,000

1996

28,000

Building 38

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Building 47

Fabrication

Fab Initiation

2005

Germany

Dresden

Wafer Capacity

500

2005

500

Kulim 1

Fabrication

Fab Initiation

2006

Malaysia

Kulim

Wafer Capacity

110,000

2006

110,000

Mesa Facility

Fabrication

Fab Initiation

1990

USA

Mesa

Wafer Capacity

3,000

1990

3,000

Villach 150mm

Fabrication

Fab Initiation

1981

Austria

Villach

Wafer Capacity

35,000

1981

35,000

Villach 200mm

Fabrication

Fab Initiation

1995

Austria

Villach

Wafer Capacity

68,000

1995

68,000

Temecula

Fabrication

Fab Initiation

1995

USA

Temecula

Wafer Capacity

30,000

1995

30,000

Villach 300mm

Fabrication

Fab Initiation

2021

Austria

Villach

Wafer Capacity

2021

Villach 150mm

Fabrication

Fab Initiation

2018

Austria

Villach

Wafer Capacity

5,000

2018

5,000

Kulim 3

Fabrication

Fab Initiation

2024

Malaysia

Kulim

Wafer Capacity

2024

Fab 25

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

31,000

1995

31,000

Dresden - Module 4

Fabrication

Fab Initiation

2026

Germany

Dresden

Wafer Capacity

2026

Category top products 20

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