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MPN3404RL

Onsemi

MPN3404RL by Onsemi

MPN3404RL by Onsemi is a PIN diode with a max forward resistance of 0.85 ohm and diode capacitance of 2 pF, suitable for very high frequency applications like switching. It operates at temperatures up to 125 °C, has a breakdown voltage of 20V, and a power dissipation of 0.4W in a cylindrical package style.

Median Price

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Lifecycle Status

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2

In-Stock Inventory

1k+

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Vyrian

USA . 2,445 parts In-Stock

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Digiode

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TANS Electronics

Latvia . 6,153 parts In-Stock

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Problanco Electronics

Mexico . 5,904 parts In-Stock

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Kulean Microsystems

USA . 4,334 parts In-Stock

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UHIMA Technologies

Türkiye . 953 parts In-Stock

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Corphita

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SupplyDigital Components

Austria . 294 parts In-Stock

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Corohmni

South Africa . 223 parts In-Stock

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Overview

Boost your electronic designs with the MPN3404RL PIN diode from Onsemi. With a reputation for high-quality components, Onsemi delivers reliable products that meet the demands of very high-frequency applications like switching. The MPN3404RL offers low diode capacitance, optimal forward resistance, and a high breakdown voltage, making it a top choice for engineers seeking superior performance and efficiency. Trust Onsemi to provide the cutting-edge technology you need for your next project.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring longevity and reliability.

Config: SINGLE

Simplified setup and operation, making it easier to integrate into various systems.

Frequency Band: VERY HIGH FREQUENCY

Allows for efficient performance in high-frequency applications.

Maximum Diode Capacitance: 2 pF

Low capacitance ensures minimal interference and signal loss in switching applications.

Package Shape: ROUND

Uniform shape for easy handling and installation.

No. of Terminals: 2

Simplified connection setup for straightforward integration.

Package Style (Meter): CYLINDRICAL

Fits well in cylindrical setups, enhancing compatibility.

Application: SWITCHING

Optimized for switching applications, ensuring efficient performance.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, suitable for a wide range of operating conditions.

Terminal Finish: TIN LEAD

Provides a reliable connection and ensures good conductivity.

Terminal Position: BOTTOM

Facilitates easier placement and connection within systems.

Maximum Diode Forward Resistance: 0.85 ohm

Low forward resistance for efficient signal transmission.

Maximum Power Dissipation: 0.4 W

Can handle moderate power levels without overheating.

Minimum Breakdown Voltage: 20 V

Can handle a wide range of voltages, enhancing versatility.

Diode Type: PIN DIODE

PIN diodes are known for their fast switching speeds and low noise characteristics.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Offers stable and reliable performance in various applications.

Terminal Form: THROUGH-HOLE

Simplifies assembly and installation processes.

Diode Element Material: SILICON

Silicon diodes are known for their high efficiency and reliability.

Technical Specifications

PIN Diodes MPN3404RL attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Additional Features:

EUROPEAN PART NUMBER

Application:

SWITCHING

Minimum Breakdown Voltage:

20 V

Config:

SINGLE

Maximum Diode Capacitance:

2 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

.85 ohm

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.4 W

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPN3404RL Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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