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MPN3700RLRE

Onsemi

MPN3700RLRE by Onsemi

The Onsemi MPN3700RLRE is a PIN diode with 1 pF capacitance, 1 ohm forward resistance, and 200V breakdown voltage. It operates in the very high-frequency band for switching applications up to 125 °C. The diode's cylindrical package with tin-lead finish is designed for through-hole mounting, making it suitable for various electronic circuits.

Median Price

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Lifecycle Status

Suppliers In-Stock

2

In-Stock Inventory

1k+

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Vyrian

USA . 1,926 parts In-Stock

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Digiode

USA . 1,684 parts In-Stock

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TANS Electronics

Latvia . 5,841 parts In-Stock

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Problanco Electronics

Mexico . 3,825 parts In-Stock

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SupplyDigital Components

Austria . 3,203 parts In-Stock

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Kulean Microsystems

USA . 2,289 parts In-Stock

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Corphita

USA . 757 parts In-Stock

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Corohmni

South Africa . 299 parts In-Stock

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UHIMA Technologies

Türkiye . 218 parts In-Stock

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Overview

Unlock the power of cutting-edge technology with the MPN3700RLRE PIN Diode by Onsemi. As a leading manufacturer in the industry, Onsemi delivers top-quality components that are designed for very high-frequency applications like switching. With a maximum diode capacitance of 1 pF and a minimum breakdown voltage of 200V, this PIN diode offers exceptional performance and reliability. Trust Onsemi to provide you with a product that not only meets your needs but exceeds your expectations. Elevate your projects with the MPN3700RLRE, the perfect choice for high-performance applications.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, making it suitable for various applications.

Config: SINGLE

Simplified setup and operation with a single diode configuration.

Frequency Band: VERY HIGH FREQUENCY

Ideal for applications requiring high frequency performance.

Maximum Diode Capacitance: 1 pF

Low capacitance allows for fast switching speeds and high frequency operation.

Package Shape: ROUND

Compact and efficient design for space-saving applications.

No. of Terminals: 2

Simple two-terminal setup for easy integration.

Package Style (Meter): CYLINDRICAL

Suitable for various mounting options and easy installation.

Application: SWITCHING

Designed specifically for switching applications, ensuring reliable performance.

Maximum Operating Temperature: 125 °C

Can operate in high-temperature environments without performance degradation.

Terminal Finish: TIN LEAD

Provides good electrical conductivity and solderability for reliable connections.

Terminal Position: BOTTOM

Easily accessible terminal position for convenient circuit connections.

Maximum Diode Forward Resistance: 1 ohm

Low forward resistance for efficient signal transmission.

Maximum Power Dissipation: 0.28 W

Can handle moderate power levels without overheating.

Minimum Breakdown Voltage: 200 V

High breakdown voltage for reliable performance in high voltage applications.

Diode Type: PIN DIODE

PIN diodes are known for their fast switching speeds and low distortion.

Technology: POSITIVE-INTRINSIC-NEGATIVE

Innovative technology for improved performance and efficiency.

Terminal Form: THROUGH-HOLE

Through-hole terminals for secure and reliable mounting on PCBs.

Diode Element Material: SILICON

Silicon diode element material for stable and consistent performance.

Technical Specifications

PIN Diodes MPN3700RLRE attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Application:

SWITCHING

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1 ohm

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-92

JESD-30 Code:

O-PBCY-T2

JESD-609 Code:

e0

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

CYLINDRICAL

Maximum Power Dissipation:

.28 W

Qualification:

Not Qualified

Surface Mount:

NO

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN LEAD

Terminal Form:

Terminal Position:

Trade Compliance

MPN3700RLRE Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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