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MMBV3700LT1G

Onsemi

MMBV3700LT1G by Onsemi

MMBV3700LT1G by Onsemi is a PIN diode with 1pF capacitance, 20V reverse test voltage, and 1 ohm forward resistance. It is used for very high-frequency switching applications due to its positive-intrinsic-negative technology and small outline package style. Operating at up to 125°C, it offers efficient performance in various electronic systems.

Median Price

$0.071

Lifecycle Status

Suppliers In-Stock

3

In-Stock Inventory

1k+

Distributors (In-Stock)

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Nova Conductors

Japan . 10 parts In-Stock

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$0.071

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$0.071

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Vyrian

USA . 12,360 parts In-Stock

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Digiode

USA . 328 parts In-Stock

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328

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Distributors (Availability)

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Corohmni

South Africa . 134 parts In-Stock

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$0.068

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Aranea Global

USA . 100 parts In-Stock

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$0.070

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$0.067

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Continental Prestige Electronics

USA . 4,326 parts In-Stock

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$0.071

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$0.070

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Argo Parts USA

USA . 317 parts In-Stock

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$0.071

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$0.069

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$0.069

Ampacity Inc.

Singapore . 861 parts In-Stock

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$1.010

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$1.010

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AZTECH Wire

Italy . 375 parts In-Stock

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$9.570

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Metaverse IC Inc.

Canada . 90,000 parts In-Stock

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Kepictronics

USA . 51,000 parts In-Stock

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Kulean Microsystems

USA . 7,486 parts In-Stock

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Authorized Procurement Solutions

USA . 7,000 parts In-Stock

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QUARKTWIN TECHNOLOGY LTD

USA . 5,207 parts In-Stock

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TANS Electronics

Latvia . 4,014 parts In-Stock

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SupplyDigital Components

Austria . 2,917 parts In-Stock

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Corphita

USA . 1,768 parts In-Stock

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UHIMA Technologies

Türkiye . 568 parts In-Stock

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Problanco Electronics

Mexico . 369 parts In-Stock

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Overview

Unleash the power of cutting-edge technology with the MMBV3700LT1G by Onsemi. As a top-tier manufacturer, Onsemi guarantees superior quality and reliability in their PIN diodes. Ideal for applications requiring high-frequency switching, this product offers unmatched performance and efficiency. With a compact design and a wide operating temperature range, the MMBV3700LT1G is the perfect solution for your electronic needs. Experience the value and benefits of Onsemi's advanced technology with this innovative product.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

Provides durability and protection for the diode, ensuring a longer lifespan.

Frequency Band: VERY HIGH FREQUENCY

Ideal for applications requiring high frequency operation, making it suitable for advanced electronic systems.

Maximum Diode Capacitance: 1 pF

Low capacitance allows for high-speed switching, enhancing overall performance.

Maximum Operating Temperature: 125 °C

Can withstand high temperatures, making it suitable for various environments.

Maximum Power Dissipation: 0.2 W

Efficiently manages power dissipation, preventing overheating.

Diode Type: PIN DIODE

PIN diodes are known for their fast switching capabilities and low distortion, making them a reliable choice for switching applications.

Technical Specifications

PIN Diodes MMBV3700LT1G attributes and parameters. Explore more PIN Diodes devices from Onsemi

Specs

Additional Features:

HIGH VOLTAGE

Application:

SWITCHING

Minimum Breakdown Voltage:

200 V

Config:

SINGLE

Maximum Diode Capacitance:

1 pF

Nominal Diode Capacitance:

1 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1 ohm

Diode Resistive Test Current:

10 mA

Diode Type:

Frequency Band:

VERY HIGH FREQUENCY

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Moisture Sensitivity Level (MSL):

1

No. of Elements:

1

No. of Terminals:

3

Maximum Operating Temperature:

125 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.2 W

Qualification:

Not Qualified

Reverse Test Voltage:

20 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

MMBV3700LT1G Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

PCN

Manufacturer Highlights

Onsemi

Established in 1999, Onsemi is a leading global provider of power and image-sensing technologies. They are dedicated to building a better future for the automotive, industrial, cloud, medical, and IoT markets. Onsemi's core technologies include analog, digital, and mixed-signal products that offer innovative solutions for advanced automotive systems; highly reliable power management products for industrial applications; low-cost imaging solutions for medical equipment and consumer electronics; and robust communication architectures for the Internet of Things (IoT).

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Management team

President, CEO

Hassane El-Khoury

Executive VP, CFO, Treasurer

Thad Trent

Senior VP

Ross F. Jatou

Manufacturer fab locations 15

Fab name Location Fab Initiation Wafer Capacity

Aizu Fab

Fabrication

Fab Initiation

1995

Japan

Aizu Wakamatsu

Wafer Capacity

52,000

1995

52,000

Si/EPI Fab

Fabrication

Fab Initiation

2018

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

10,000

2018

10,000

Expansion Phase 1 for SiC / EPI

Fabrication

Fab Initiation

2019

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

14,500

2019

14,500

Expansion Phase 2 for SiC / EPI

Fabrication

Fab Initiation

2024

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

2024

SiC Fab

Fabrication

Fab Initiation

2022

USA

Hudson

Wafer Capacity

2022

Bucheon

Fabrication

Fab Initiation

2013

South Korea

Bucheon

Wafer Capacity

61,000

2013

61,000

ISMF - Malaysia

Fabrication

Fab Initiation

1990

Malaysia

Seremban

Wafer Capacity

95,000

1990

95,000

Roznov Device Fab

Fabrication

Fab Initiation

1987

Czech Republic

Rožnov pod Radhoštěm

Wafer Capacity

80,000

1987

80,000

Fab 10

Fabrication

Fab Initiation

2002

USA

East Fishkill

Wafer Capacity

15,000

2002

15,000

Burlington

Fabrication

Fab Initiation

1986

Canada

Burlington

Wafer Capacity

1986

Gresham

Fabrication

Fab Initiation

1998

USA

Gresham

Wafer Capacity

45,000

1998

45,000

Bucheon 150mm

Fabrication

Fab Initiation

2000

South Korea

Bucheon

Wafer Capacity

50,000

2000

50,000

Rochester

Fabrication

Fab Initiation

1983

USA

Rochester

Wafer Capacity

10,000

1983

10,000

Nampa

Fabrication

Fab Initiation

1995

USA

Nampa

Wafer Capacity

1995

Pennsylvania

Fabrication

Fab Initiation

1997

USA

Mountain Top

Wafer Capacity

36,000

1997

36,000

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