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BAP64-06,215

NXP Semiconductors

BAP64-06,215 by NXP Semiconductors

BAP64-06,215 by NXP Semiconductors is a PIN diode with common anode configuration and 2 elements. It operates in the S band frequency range and has a max diode capacitance of 0.35 pF. This diode is commonly used as an attenuator or for switching applications.

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Overview

Discover the BAP64-06,215 by NXP Semiconductors, a top-quality PIN diode that offers exceptional value and benefits to customers. With its common anode configuration and two elements, this diode is perfect for a range of applications, including attenuators and switching. Manufactured by NXP Semiconductors, a renowned leader in the industry, you can trust that this product is reliable and high-performing. Its small outline package, surface mount capability, and durable plastic/epoxy body make it easy to integrate into any project. Whether you need precise signal control or efficient power management, the BAP64-06,215 delivers unmatched performance in the S band frequency. Don't settle for less - choose the BAP64-06,215 and experience the advantages of NXP Semiconductors' superior technology.

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy package body material ensures durability and protection for the PIN diode, making it suitable for various applications.

Config: COMMON ANODE, 2 ELEMENTS

The common anode configuration with two elements allows for easy integration and versatile usage in attenuators and switching circuits.

Frequency Band: S BAND

The S band frequency range indicates that the PIN diode is designed to operate effectively in this specific frequency range, making it ideal for applications in radar systems and communications.

Surface Mount: YES

The surface mount capability enables straightforward and convenient integration onto printed circuit boards, offering flexibility and space-saving benefits.

Maximum Diode Capacitance: 0.35 pF

With a low maximum diode capacitance, this PIN diode possesses excellent high-frequency characteristics and is suitable for applications where minimal capacitance is crucial.

Package Shape: RECTANGULAR

The rectangular package shape ensures mechanical stability, facilitating easy handling during assembly and providing a secure fit onto circuit boards.

No. of Terminals: 3

The three-terminal design allows for enhanced control and signal routing, making it an effective choice for attenuator and switching applications.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables compact and efficient design layouts while maintaining reliable electrical performance.

Application: ATTENUATOR; SWITCHING

This PIN diode is well-suited for attenuator and switching applications, offering precise control over signal levels and seamless switching capabilities.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this PIN diode can withstand harsh conditions, enabling reliable performance in various environments.

Minimum Operating Temperature: -65 °C

The low minimum operating temperature allows the PIN diode to function reliably in extremely cold environments without compromising its performance.

Terminal Finish: TIN

The tin terminal finish enhances solderability, contributing to a strong and reliable electrical connection during the manufacturing process.

Terminal Position: DUAL

The dual terminal position allows for versatile mounting options, ensuring compatibility with different circuit layouts and providing flexibility during assembly.

Maximum Diode Forward Resistance: 1.35 ohm

With a low maximum diode forward resistance, this PIN diode minimizes signal loss and offers efficient current flow, making it suitable for high-frequency applications.

Maximum Power Dissipation: 0.25 W

The high maximum power dissipation capability of 0.25 W enables the PIN diode to handle substantial power levels, ensuring reliable operation even under challenging conditions.

Nominal Diode Capacitance: 0.52 pF

The nominal diode capacitance value indicates excellent high-frequency characteristics, making this PIN diode an optimal choice for applications that require minimal capacitance.

Nominal Minority Carrier Lifetime: 1.55 us

The nominal minority carrier lifetime value specifies the diode's ability to respond rapidly to changes in bias, making it suitable for high-speed switching applications.

Minimum Breakdown Voltage: 175 V

The high minimum breakdown voltage allows the PIN diode to handle high voltage levels, making it well-suited for applications that require robust voltage protection.

Maximum Time At Peak Reflow Temperature (s): 30

The PIN diode can withstand the peak reflow temperature for a maximum duration of 30 seconds during the soldering process, ensuring reliable assembly without component damage.

Peak Reflow Temperature °C: 260

With a peak reflow temperature of 260°C, this PIN diode is compatible with lead-free soldering processes, providing compliance with industry standards.

Diode Resistive Test Frequency: 100 MHz

The diode resistive test frequency of 100 MHz characterizes the PIN diode's performance at this specific frequency, making it suitable for applications within this range.

Diode Resistive Test Current: 0.5 mA

The diode resistive test current value indicates the optimal test current for accurate characterization and evaluation of the PIN diode's electrical properties.

Diode Type: PIN DIODE

This PIN diode belongs to the PIN diode category, known for its low capacitance and fast switching capabilities, making it a reliable choice for various RF applications.

Technology: POSITIVE-INTRINSIC-NEGATIVE

The positive-intrinsic-negative technology employed in this PIN diode ensures low capacitance and high efficiency, enabling excellent performance in RF and microwave circuits.

Terminal Form: GULL WING

The gull wing terminal form enhances mechanical stability during soldering and enables a reliable connection, ensuring secure integration within the circuit.

No. of Elements: 2

With two elements, this PIN diode provides flexibility for various circuit configurations and enables effective current control, enhancing its suitability for switching and attenuator applications.

Moisture Sensitivity Level (MSL): 1

The MSL rating of 1 indicates that this PIN diode has a low moisture sensitivity level, ensuring its long-term reliability even in humid environments.

Diode Element Material: SILICON

Made of silicon, the diode element material offers excellent electrical properties, enabling efficient signal control and ensuring consistent performance.

Technical Specifications

PIN Diodes BAP64-06,215 attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Additional Features:

HIGH VOLTAGE

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

175 V

Config:

COMMON ANODE, 2 ELEMENTS

Maximum Diode Capacitance:

.35 pF

Nominal Diode Capacitance:

.52 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1.35 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

S BAND

JEDEC-95 Code:

TO-236AB

JESD-30 Code:

R-PDSO-G3

JESD-609 Code:

e3

Nominal Minority Carrier Lifetime:

1.55 us

Moisture Sensitivity Level (MSL):

1

No. of Elements:

2

No. of Terminals:

3

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Peak Reflow Temperature (C):

260

Maximum Power Dissipation:

.25 W

Qualification:

Not Qualified

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Finish:

TIN

Terminal Form:

Terminal Position:

Maximum Time At Peak Reflow Temperature (s):

30

Trade Compliance

BAP64-06,215 Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00

SB

8541.10.00.80

PCN

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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