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BAP64-03/DG/B2/AX

NXP Semiconductors

BAP64-03/DG/B2/AX by NXP Semiconductors

BAP64-03/DG/B2/AX by NXP Semiconductors is a single PIN diode designed for S-band applications, ideal for attenuators and switching. It features a max capacitance of 0.35 pF, operates b/w -65 °C to 150 °C, and supports up to 0.5 W power dissipation. Its compact surface mount design ensures efficient integration in electronic circuits.

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Anansix

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One Stop Electronics

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Native Components

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Northwest PG Solutions

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Overview

Unlock superior performance with the BAP64-03/DG/B2/AX PIN Diode from NXP Semiconductors, a trusted leader in innovative solutions. Designed for versatility, it excels in applications like attenuators and switches, ensuring seamless operation across S-band frequencies. With its compact size and high reliability, this diode enhances your designs while offering unmatched durability, making it the ideal choice for demanding environments. Experience quality and efficiency that elevate your projects to new heights!

Feature Benefit Bullets

Package Body Material: PLASTIC/EPOXY

The plastic/epoxy body material provides excellent protection and durability, making it suitable for various applications in different environments.

Configuration: SINGLE

The single configuration offers simplicity and ease of integration into various electronic circuits, making it user-friendly.

Frequency Band: S BAND

Designed for S band applications, this diode is ideal for RF communication, radar systems, and various wireless technologies.

Surface Mount: YES

The surface mount feature allows for compact designs and efficient use of space on PCBs, enhancing overall device performance.

Maximum Diode Capacitance: 0.35 pF

With low maximum diode capacitance, this product ensures minimal signal distortion, making it effective for high-frequency switching.

Package Shape: RECTANGULAR

The rectangular package shape facilitates easier placement and soldering, which is advantageous for automated assembly processes.

Reverse Test Voltage: 0 V

Having a reverse test voltage of 0 V simplifies the testing process and indicates minimal leakage, improving reliability.

No. of Terminals: 2

The two terminals contribute to straightforward wiring and integration into circuits, promoting ease of installation.

Package Style (Meter): SMALL OUTLINE

The small outline package style enables design flexibility and is well-suited for space-constrained applications.

Application: ATTENUATOR; SWITCHING

This diode is tailored for both attenuation and switching applications, making it versatile for various circuit designs.

Maximum Operating Temperature: 150 °C

With a high maximum operating temperature, this product demonstrates excellent thermal resilience, suitable for demanding environments.

Minimum Operating Temperature: -65 °C

The capability to operate at low temperatures makes this diode reliable for use in extreme conditions, such as aerospace or military applications.

Terminal Position: DUAL

The dual terminal position supports flexible layout options on PCBs, enhancing design versatility.

Maximum Diode Forward Resistance: 1.35 ohm

This low forward resistance value ensures efficient operation with minimal power loss, which is critical in high-performance circuits.

Maximum Power Dissipation: 0.5 W

The power dissipation rating allows the diode to handle moderate power loads effectively, contributing to overall circuit stability.

Nominal Diode Capacitance: 0.48 pF

The nominal capacitance value indicates good performance in RF applications, ensuring low signal loss.

Nominal Minority Carrier Lifetime: 1.55 us

A nominal lifetime of 1.55 microseconds allows for efficient operation in dynamic switching applications, enhancing performance.

Minimum Breakdown Voltage: 175 V

A high minimum breakdown voltage ensures robustness against voltage spikes, making it suitable for high-voltage applications.

Diode Resistive Test Frequency: 100 MHz

Designed for 100 MHz test frequency, this diode is well-suited for applications requiring high-frequency signal handling.

Reference Standard: IEC-60134

Compliance with the IEC-60134 standard ensures that this diode meets international safety and quality requirements.

Diode Resistive Test Current: 0.5 mA

A test current of 0.5 mA indicates low power operation, suitable for battery-powered applications and minimizing energy consumption.

Diode Type: PIN DIODE

As a PIN diode, it offers excellent performance for high-frequency applications, ideal for RF switching and attenuation.

Technology: POSITIVE-INTRINSIC-NEGATIVE

This positive-intrinsic-negative technology enhances the diode's efficiency and performance, making it an excellent choice for communication devices.

Terminal Form: GULL WING

The gull-wing terminal form provides excellent soldering characteristics, ensuring reliable connections and ease of assembly.

Diode Element Material: SILICON

Silicon material ensures good thermal and electrical properties, contributing to the diode's overall reliability and performance.

Technical Specifications

PIN Diodes BAP64-03/DG/B2/AX attributes and parameters. Explore more PIN Diodes devices from NXP Semiconductors

Specs

Additional Features:

HIGH VOLTAGE

Application:

ATTENUATOR; SWITCHING

Minimum Breakdown Voltage:

175 V

Config:

SINGLE

Maximum Diode Capacitance:

.35 pF

Nominal Diode Capacitance:

.48 pF

Diode Element Material:

SILICON

Maximum Diode Forward Resistance:

1.35 ohm

Diode Resistive Test Current:

.5 mA

Diode Resistive Test Frequency:

100 MHz

Diode Type:

Frequency Band:

S BAND

JESD-30 Code:

R-PDSO-G2

Nominal Minority Carrier Lifetime:

1.55 us

No. of Elements:

1

No. of Terminals:

2

Maximum Operating Temperature:

150 Cel

Minimum Operating Temperature:

-65 Cel

Package Body Material:

PLASTIC/EPOXY

Package Shape:

Package Style (Meter):

SMALL OUTLINE

Maximum Power Dissipation:

.5 W

Reference Standard:

IEC-60134

Reverse Test Voltage:

0 V

Sub-Category:

PIN Diodes

Surface Mount:

YES

Technology:

POSITIVE-INTRINSIC-NEGATIVE

Terminal Form:

Terminal Position:

Trade Compliance

BAP64-03/DG/B2/AX Diodes trade compliance attributes, and parameters.

ECCN

EAR99

ECCN Governance

EAR

HTS

8541.10.00.80

SB

8541.10.00.80

Manufacturer Highlights

NXP Semiconductors

NXP is a leading semiconductor company that creates cutting-edge technology to power secure connections in a smarter world. Founded in 2006, they have grown to become one of the top five global semiconductor companies and serve their customers in over 70 countries around the world.

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Management team

Executive Director, President, CEO

Kurt Sievers

Executive VP, CFO

Bill Betz

Executive VP, Chief Sales Officer

Ron Martino

Manufacturer fab locations 7

Fab name Location Fab Initiation Wafer Capacity

ICN8

Fabrication

Fab Initiation

1996

Netherlands

Nijmegen

Wafer Capacity

55,000

1996

55,000

ATMC (Austin Tech & Mfg Center)

Fabrication

Fab Initiation

1995

USA

Austin

Wafer Capacity

30,000

1995

30,000

N/A

Fabrication

Fab Initiation

1989

Germany

Boeblingen

Wafer Capacity

1989

CHD

Fabrication

Fab Initiation

1993

USA

Chandler

Wafer Capacity

30,000

1993

30,000

OHTC

Fabrication

Fab Initiation

1991

USA

Austin

Wafer Capacity

24,000

1991

24,000

New Expansion Fab

Fabrication

Fab Initiation

2026

USA

Austin

Wafer Capacity

2026

ECHO

Fabrication

Fab Initiation

2020

USA

Chandler

Wafer Capacity

10,000

2020

10,000

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